Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and long haul DWDM systems. By co-packaging the laser, locker, modulator and MZ Bias Control Tap in a package with the same footprint area as the industry standard 14-pin, the LMC10 series provides Mach-Zehnder performance at a price similar to lower performance alternatives. The provision of the MZ bias control tap offers the option of MZ bias point optimisation for best transmitted optical waveform over life. The high output power, integral wavelength locking and high extinction ratio provides excellent OSNR to allow the device to be employed on multi-span long haul links. Features: • Mean modulated power >+4dBm over life and temperature • Negative Chirp (up to 1600ps/nm applications) • Co-planar differential RF drive ≤2.7 volts • Suitable for 50GHz ITU applications with +/-20pm λ accuracy over life • Low Power Dissipation • Industry Standard 14-pin footprint area • Pins on one side to allow increased system density • C and L band • Unrivalled performance vs size • Qualified to Telcordia GR-468 CORE • RoHS 5/6 compliant Applications: • 10Gb/s Long Haul DWDM multi-span dispersion compensated links • Regional Metro single spans with no dispersion compensation • 10Gb/s Overlay for Metro Networks • 2.5Gb/s Long Haul DWDM multi-span non dispersion compensated links 1 Data Sheet Using the LMC10NEG The LMC10NEG can be used in two ways: Mode 1. With dynamic modulator arm DC bias control where the MZ bias control tap is used in a control loop to optimise the optical crossing point over life. Details of operating in this mode are given in applications note AN0136. Mode 2. Fixed modulator arm DC bias where the tap function is not used. Backwards compatible with the LMC10NEH device. Characteristics Parameter Conditions Min External temperature of Tx case [1] Modulated output power Typ Max Unit -5 75 °C EOL over temperature 4 7 dBm Power variation over case temperature [2] -1.3 0.5 dB AC extinction ratio EOL, 10.709Gb/s [3] Dispersion penalty over temperature 10.709Gb/s, EOL [4] Data bar arm bias <9mA arm bias current Data arm bias Module and Modulator Parameters Case temperature 2 [Tcase] 10 11.5 dB 2 dB -4 -1.1 V <9mA arm bias current -2.2 -0.5 V Modulation drive voltage per arm, pk-pk, 10.709Gb/s [5] 1.8 2.7 V Optical rise time, fall time 20% - 80% 35 ps Tolerable link optical reflection [6] -14 dB Output optical return loss [7] 20 Optical crossing level (Mode 1) [8] 48 Optical crossing level (Mode 2) [9] 40 Modulator bandwidth S21, -3dB 10 dB 50 52 % 60 % GHz Data Sheet Characteristics (continued) Parameter Conditions Min Typ Max Unit 305 mA -20 20 mA 20 85 mA 2.3 V 20 MHz Laser Source Parameters Laser forward current EOL Change in laser forward current C & L-Band. Wavelength locked From SOL to EOL Laser threshold current EOL Laser forward voltage EOL at locked wavelength Laser linewidth CW FWHM Side mode suppression ratio [SMSR] At locked wavelength Average relative intensity noise [RIN] 200MHz to 8GHz Parameter Conditions Min Thermistor resistance For locked wavelength [15] 4500 TEC current 5 40 50 dB -140 dB/Hz Max Unit 10100 Ohms EOL, T Case = 75°C 1.1 A TEC voltage EOL, T Case = 75°C 3 V Module power dissipation EOL, T Case = 75°C 1.5 4 W Parameter Conditions Min Typ Max Unit Etalon photocurrent at locked wavelength EOL 0.1 2 mA Reference photocurrent at locked wavelength EOL 0.1 2 mA Etalon slope at locked wavelength EOL [10] 0.3 7 uA/pm Reference slope at locked wavelength EOL 0.1 3 uA/pm Etalon / reference current ratio at locking point [11] 0.2 2 ratio Wavelength accuracy over life and temperature [12] -20 20 pm Laser drive current tuning coefficient [13] 3 7 pm/mA Typ TEC and Thermal Parameters Wavelength Locker Parameters Note: AC parameters such as extinction ratio and waveform crossing may be system dependent. 3 4 Data Sheet Characteristics (continued) Parameter Conditions Min Typ [14] -5.1 -5 Max Unit Bias Control Tap Parameters Tap bias voltage Tap photocurrent V 10 mA S11 Test Mask Note: AC parameters such as extinction ratio and waveform crossing may be system dependent. 4 Data Sheet Glossary BFM Back Facet Monitor diode SOL Start of life CW Continuous wave Tcase Case temperature EOL End of life Pk-pk Peak to peak FWHM Full width half maximum BCT Bias Control Tap MZ Mach-Zehnder interferometer Notes to Characteristic Tables [1] Refer to Bookham applications document AN0117 for Tx case temperature measurement definition. [11] Maintain the start of life locking ratio over life to hold wavelength constant. [2] Power variation over case temperature is measured reference to 30°C case temperature. [12] Assumes wavelength is set to ITU wavelength at start of life, closed loop wavelength control by maintaining constant locking ratio. [3] Measured reference to a high speed sampling oscilloscope (unfiltered). EOL figure does not include modulator driver component ageing if applicable. [4] Measured with 1600ps/nm chromatic dispersion, ITU-T G652 optical fibre, 10.709Gb/s, 223-1 PRBS NRZ sequence. The penalty calculation is made at a BER level of 10-10. RX OSNR > 30dB [35dB target], RBW of 0.1nm using a Bookham standard receiver with differential drive to modulator. The device is driven directly from a pattern generator. Receiver decision point self optimised for amplitude and phase. [13] Wavelength variation with change in laser drive current at constant temperature. [14] The MZ bias control tap responsivity is bias voltage dependent. [15] The thermistor current should not exceed 100 µA to prevent self-heating effects. The thermistor resistance varies with temperature according to the following Steinhart-Hart equation, where C1= 1.2156x10-3, C2= 2.1925x10-4, C3=1.5241x10-7 for the thermistor type used. Temperature is required in Kelvin. [5] Measured at the input to the LMC10NEG. Driver selection must take into account modulator driver to transmitter transmission line losses. Refer to Bookham applications document AN0137. [6] Optical return loss of plant attached to LMC10NEG fibre connector. [7] Optical return loss looking back into the LMC10NEG averaged over polarisation, with target value of -27dB. [8] This is a requirement for the crossing control loop over life and temperature. The accuracy over life and temperature will be a function of the control loop circuit design. Reference application note AN0136. [9] Assuming 50% crossing level set at start of life. EOL figure does not include modulator driver component ageing if applicable. [10] Slope of the etalon signal can be either positive or negative. 5 Note: AC parameters such as extinction ratio and waveform crossing may be system dependent. Data Sheet Absolute Maximum Ratings Condition Min Storage case temperature -40 Typ Laser Current Laser Voltage Unit 85 C 600 mA -2 MZ arm voltage (DC) -12 [1] MZ modulator arm bias currents (DC) [2] V 0 V 12 mA BFM bias -15 0 V MZ bias control tap voltage -6 0 V 10 mA MZ bias control tap current TEC voltage [5] -3 3 V TEC current [5] -1.8 1.8 A Output optical power [continuous operation] 13 dBm Lead soldering temperature [3] 260 °C Fiber bend radius [4] 30 Notes: [1] [2] [3] [4] [5] With laser off. Do not forward bias the MZ arms or the bias control tap. Do not exceed the MZ and bias control tap maximum currents. Maximum soldering time of 10 seconds, Tx case and fiber must not be subjected to extremes of temperature. Minimum fiber bend radius of 30mm, fiber may be damaged if exceeded. Thermistor operating range must not be exceeded. ESD Rating This product is ESD compliant to Class 2 as defined by Telcordia TA-TSY-000870. ESD precautions must be used when handling this device and are required in both production and R&D environments. 6 Max mm Data Sheet Schematic Diagram Pin Out Table 7 Pin # Function Pin # Function 1 Data bias 9 Case ground 2 Data bar bias 10 TEC - 3 Connect to ground 11 TEC + 4 MZ bias control tap 12 Laser anode 5 Case ground 13 Thermistor 6 Data bar 14 Etalon BFM anode 7 Case ground 15 BFM common cathode 8 Data 16 Reference BFM anode Data Sheet Pin Definitions Pin 1 MZ data DC Bias input and Pin 2 MZ data-bar DC Bias input DC bias voltages for data and data-bar MZ arms. These pins must be connected to a low noise negative DC voltage, typically around -2V (WRT case). These voltages are defined for each Tx in the deliverable data. A precision voltage source must be used, which is capable of sourcing up to 10mA to each pin. Refer to Bookham applications note AN0130 for circuit implementation and filtering suggestions. Pin 3 Connect to ground. Pin 4 Bias Control Tap The MZ bias control tap pin must be biased to -5V. The supply should be regulated if the device is used in mode 1 as the monitor diode responsivity is voltage dependent. Pins 5, 7 and 9 Ground Package ground connections. Pin 6 MZ Data-bar modulation input and Pin 8 MZ Data modulation input Operation is typically using differential electrical drive voltages applied to both the Data and Data-bar MZ Modulator inputs. Typical amplitude is 2.0V peak-to-peak. AC RF coupling must be used. Pin 10 TEC (-) and Pin 11 TEC (+) The LMC10 contains a Peltier heatpump. Applying a negative voltage on Pin 10 with respect to Pin 11 will cause the internal optics to be cooled relative to the case temperature. Reversing the applied voltage will cause the internal structures to be heated. The heatpump must be used in a feedback controlled circuit in conjunction with the internal thermistor. Pin 12 Laser Anode The laser is operated with a forward bias current, the laser cathode being connected internally to case ground. Pin 13 Thermistor The thermistor is used in the TEC control loop for keeping the internal temperature at a constant value. It has a nominal resistance of 10k Ohms at a temperature of 25ºC and is not polarity sensitive, although one side of the thermistor is connected to package ground. Operating current should be limited to less than 100µA to prevent self heating errors. The exact thermistor value is supplied with each Tx as part of the deliverable test data to ensure the correct operating wavelength. Pin 14 Back Facet Monitor Diode Anode (Etalon) The signal from this diode carries the spectral response of the wavelength filter. Pin 15 Back Facet Monitor Diode Common Cathode Common connection for monitor diode cathodes. Pin 16 Back Facet Monitor Diode Anode (Reference) The signal from this diode is the reference signal and indicates the power of the rear facet of the laser. The signals from the reference and etalon monitor diodes are used in a control loop to maintain the wavelength of the laser at the defined lock point. Operating the LMC10NEG Control Schemes for the LMC10NEG Arm DC Bias Voltage Control A dynamic control scheme can be implemented to maintain the bias points on the left and right arms of the MZ modulator at the quadrature point. This will maintain the output pulse train with a 50% eye crossing level. The control circuit needs to track any over life change in the bias points, thereby maintaining the 50% eye crossing condition. Benefits of Using Control Schemes The product can be used without the control scheme as discussed above. But there are benefits of implementing the control loop: 8 Maintaining the optical eye crossing to 50% through the life of the product will minimise the variation in extinction ratio and reduce variations in link dispersion penalty. Summary For more demanding applications at higher link lengths or tighter link budgets the LMC10NEG may be used with a dynamic control scheme which will provide MZ arm bias point control for 50% optical eye crossing. Use of the BCT in a control loop can offer improved optical eye shape stability compared to open loop performance. Data Sheet Wavelength Locker for the LMC10NEG Lockpoint The wavelength locker for the LMC10NEG includes two photodiodes: the Reference photodiode provides a photocurrent proportional to the laser chip facet power, and the Etalon photodiode provides a photocurrent related to wavelength (frequency). In order to lock the LMC10NEG wavelength, a control circuit should be used which maintains the laser submount temperature constant over life and then controls the wavelength by varying the laser forward current to keep the ratio of the etalon and reference photodiode currents (Locking Ratio) constant. This may be achieved by keeping the discrimination value (LR x Iref) – Iet) at zero, where LR is the target Locking Ratio. Lockpoint Refer to applications document AN0142 for further information on wavelength locking. 9 Data Sheet Package Outline Drawing 10 Data Sheet Typical 10Gb/s Eye Diagram Test Conditions: 10.709Gb/s 223-1PRBS NRZ data. Typical Over Fibre Performance (SMF-28) Test Conditions: 10.709Gb/s 223-1PRBS NRZ data, BER10-12. Penalty (dB) Performance over fibre Dispersion (ps/nm) 11 Data Sheet LMC10 Mounting Guidelines The device must be attached to a heat-sink capable of dissipating a minimum of 4W without exceeding the maximum case temperature. The surface of the heat-sink must be smooth (< 0.8 micron Ra) and flat (<24.8 microns over the area and not convex in form). Attachment screws, thermal interface compounds or interface pads may be used but must not exert stress upon the device. Refer to Bookham applications note AN0117. Note on Maximum Ratings and Handling Precautions It is the nature of this device that unprotected semi-conductor junctions are connected directly to external package pins. Protection of these junctions would have an adverse effect on the performance of the device or the flexibility in its application and use. The user is requested to observe the ‘Absolute Minimum and Maximum Ratings’ in order to prevent damage or destruction of the device. In particular forward biasing the modulator, attenuator or power monitor junctions will lead to catastrophic damage if the current or voltage limits are exceeded. These junctions are also sensitive to ESD and electrical transients. The laser is similarly sensitive to reverse bias, ESD and electrical transients. These can lead to catastrophic device damage. The user is requested to ensure that operation of any control or bias circuits do not introduce electrical transients or adverse bias conditions during switch-on, switch-off or calibration and set-up routines. Appropriate ESD precautions are required in both production and R&D environments. Applications Support The following application notes are available to support customers using the LMC10NEG: Component Mounting Recommendations For the Bookham LMC10 InP MZ Transmitter Module AN0117 LMC10NEG Dynamic MZ Modulator DC Bias Control Recommendations for high Performance Power & Eye Mask Stability AN0136 Recommended RF drivers for the LMC10 Integrated Optical Transmitter Product Portfolio AN0137 LMC10 Implementing Dynamic Wavelength Locker Loops For DWDM Optical Systems AN0142 Characterisation of the LMC10 InP MZ in a 2.5Gb/s Optical Systems Environment AN0138 Compact LMC10 InP MZ Evaluation Board User Document AN0130 Optical component evaluation platforms are available for all Bookham Technology optical products. Contact your regional sales representative for further information. 12 Data Sheet Deliverable Data The following deliverable data is provided as a paper copy with each device and can also be made available as a text file from a customer specific site on a Bookham server with password protection. Parameter Units Thermistor operating resistance Ohms Laser bias current mA Wavelength operating nm MZ bias data Volts MZ bias data-bar Volts Locking reference current mA Locking etalon current mA Locking current ratio - Locker slope sign + or - [1] Laser threshold mA MZ drive voltage amplitude Volts Wavelength target (ITU-T) nm Thermistor temperature °C Laser tuning current coefficient pm/mA BFM etalon locker slope µA/pm BFM reference locker slope µA/pm Mean modulated optical power dBm AC extinction ratio dB Target eye crossing % Note: [1] Positive sign indicates etalon photocurrent increasing with wavelength at lock point. Refer to Bookham applications document AN0142 for locker slope definitions. AC specified parameters may be derived from DC measurement data. 13 Data Sheet RoHS Compliance Bookham is fully committed to environment protection and sustainable development and has set in place a comprehensive program for removing polluting and hazardous substances from all of its products. The relevant evidence of RoHS compliance is held as part of our controlled documentation for each of our compliant products. RoHS compliance parts are available to order, please refer to the ordering information section for further details. Ordering Information: LMC10NEG (Wavelength) **** – (Connector) J28 = SC/PC J57 = LC J59 = MU **** = last four digits of wavelength value e.g. for λp=1533.47nm, ****=3347 WDM wavelength range: C-Band 1528-1565 nm L-Band 1570-1606 nm Standard fibre length 1000 +/- 100 mm [blue jacket] Other connector types are available on request To order the LMC10 on an evaluation board, please use the prefix EV in front on the product code e.g. EVLMC10NEG****-J28 Bookham reserve the right to change without notice. Contact Information North America Bookham Worldwide Headquarters Europe Paignton Office Asia Shenzhen Office 2584 Junction Ave. San Jose CA 95134 USA Brixham Road Paignton Devon TQ4 7BE United Kingdom 2 Phoenix Road Futian Free Trade Zone Shenzhen 518038 China • Tel: +1 408 919 1500 • Tel: +44 (0) 1803 66 2000 • Fax: +1 408 919 6083 • Fax: +44 (0) 1803 66 2801 • Fax: +86 755 33305805 +86 755 33305807 • Tel: +86 755 33305888 Important Notice Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by Bookham before they become applicable to any particular order or contract. In accordance with the Bookham policy of continuous improvement specifications may change without notice. The publication of information in this data sheet does not imply freedom from patent or other protective rights of Bookham or others. Further details are available from any Bookham sales representative. www.bookham.com [email protected] INVISIBLE LASER RADIATION DO NOT VIEW DIRECTLY WITH OPTICAL INSTRUMENTS CLASS 1M LASER PRODUCT 14 REFERENCE IEC 60825-1 Edition 1.2 MAX POWER < 500mW WAVELENGTH 1480 - 1620nm CLASS IIIb LASER PRODUCT This product complies with 21CFR 1040.10 ISO14001:1996 EMS 504193 TL9000 Rev 3.0 (ISO9001:2000) FM15040 Caution - use of controls or adjustments or performance of procedures other than those specified herein may result in hazardous radiation exposure. BH12846 Rev 1.0 January 2007. ©Bookham 2005. Bookham is a registered trademark of Bookham Inc.