APT50M65JFLL 500V POWER MOS 7 R 0.065Ω 58A FREDFET S S ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package D G S MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M65JFLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 58 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 232 -55 to 150 °C 300 Amps 58 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 TYP MAX 500 (VGS = 10V, 29A) UNIT Volts 0.065 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 12-2003 BVDSS Characteristic / Test Conditions 050-7032 Rev D Symbol APT50M65JFLL DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Characteristic Test Conditions Input Capacitance VGS = 0V Output Capacitance VDS = 25V 3 Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time td(off) tf ID = 67A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time VDD = 250V Turn-off Delay Time ID = 67A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 1035 VDD = 333V, VGS = 15V Eon nC 30 RG = 0.6Ω Eon UNIT pF 87 141 40 70 12 28 29 VGS = 10V Gate-Source Charge MAX 7010 1390 VDD = 250V Qgd tr TYP f = 1 MHz Reverse Transfer Capacitance Total Gate Charge MIN ID = 67A, RG = 3Ω 845 INDUCTIVE SWITCHING @ 125°C 1556 VDD = 333V VGS = 15V ID = 67A, RG = 3Ω µJ 1013 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions MIN TYP MAX 58 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 232 Diode Forward Voltage 2 (VGS = 0V, IS = -67A) 1.3 Volts 15 V/ns Peak Diode Recovery dv/ dt 5 Reverse Recovery Time (IS = -67A, di/dt = 100A/µs) Tj = 25°C 270 Tj = 125°C 540 Q rr Reverse Recovery Charge (IS = -67A, di/dt = 100A/µs) Tj = 25°C 2.6 Tj = 125°C 9.6 IRRM Peak Recovery Current (IS = -67A, di/dt = 100A/µs) Tj = 25°C 17 Tj = 125°C 31 t rr UNIT ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.7 0.15 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 12-2003 050-7032 Rev D 0.9 0.20 0.3 t1 t2 0.05 0.1 0 SINGLE PULSE 0.05 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.10 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT50M65JFLL 180 Junction temp. ( ”C) 0.0528 Power (Watts) 0.0651 0.123 0.0203F 0.173F 0.490F ID, DRAIN CURRENT (AMPERES) RC MODEL 15 &10V 160 8V 140 120 7V 100 80 6.5V 60 6V 40 5.5V 20 Case temperature 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 140 120 100 80 60 TJ = +125°C 40 TJ = +25°C 20 0 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE GS 1.3 1.2 1.1 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 1.2 I D V = 29A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 29A 1.15 60 0.0 -50 1.4 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 12-2003 160 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 050-7032 Rev D ID, DRAIN CURRENT (AMPERES) 180 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 10,000 100µS 10 1mS C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 100 16 = 67A 12 100 Crss VDS=100V VDS=250V VDS=400V 8 4 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Coss 1,000 10 1 I Ciss 10mS TC =+25°C TJ =+150°C SINGLE PULSE 0 APT50M65JFLL 30,000 232 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 80 V td(off) 70 = 333V DD R 140 G = 3Ω T = 125°C tf J 120 V 50 DD R G = 3Ω T = 125°C J 40 L = 100µH 30 20 30 V DD R G 50 tr 70 90 110 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000 = 333V I T = 125°C J Eon L = 100µH EON includes diode reverse recovery. 1500 1000 500 30 V = 3Ω SWITCHING ENERGY (µJ) SWITCHING ENERGY (µJ) 12-2003 050-7032 Rev D 60 0 10 70 90 110 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 2000 80 20 0 10 2500 100 40 td(on) 10 3000 L = 100µH = 333V tr and tf (ns) td(on) and td(off) (ns) 60 DD D 50 = 333V = 67A Eoff T = 125°C J 4000 L = 100µH E ON includes diode reverse recovery. 3000 2000 Eon 1000 Eoff 0 10 0 30 50 70 90 110 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT50M65JFLL 90% Gate Voltage 10 % Gate Voltage T = 125 C J TJ = 125 C td(off) td(on) tr Drain Voltage Drain Current 90% 90% 5% 10% 10 % Drain Voltage tf Switching Energy Switching Energy 0 Drain Current Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT60DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 12-2003 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7032 Rev D 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)