AVAGO ACPM-5011-TR1 Umts/lte band11 band21 (1427.9 - 1462.9 mhz) 3 x 3 mm power amplifier module Datasheet

ACPM-5011
UMTS/LTE Band11 + Band21 (1427.9 - 1462.9 MHz)
3 x 3 mm Power Amplifier Module
Data Sheet
Description
Features
The ACPM-5011 is a fully matched 10-pin surface mount
module developed for UMTS and LTE at Band11 and Band
21. This power amplifier module operates in the 1427.91462.9 MHz bandwidth. The ACPM-5011 meets stringent
LTE (MPR = 0 dB) and HSPA+ linearity requirements up to
27.5 dBm output power. The 3 x 3 mm form factor package
is self contained, incorporating 50 ohm input and output
matching networks.
• Thin Package (0.9 mm typ)
The ACPM-5011 features 5th generation of CoolPAM circuit
technology which supports 3 power modes – bypass, mid
and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low
and medium power range. Active bypass feature is added
to 5th generation to enhance PAE further at low output
range. This helps to extend talk time.
A directional coupler is integrated into the module and
both coupling and isolation ports are available externally,
supporting daisy chain. The integrated coupler has
excellent coupler directivity, which minimizes the coupled
output power variation or delivered power variation
caused by the load mismatch from the antenna. The
coupler directivity, or the output power variation into
the mismatched load, is critical to the TRP and SAR performance of the mobile phones in real field operations as
well as compliance tests for the system specifications.
The ACPM-5011 has integrated on-chip Vref and
on-module bias switch as the one of the key features of
the CoolPAM-5, so an external constant voltage source
is not required, eliminating the external LDO regulators
and switches from circuit boards of mobile devices. It also
makes the PA fully digital-controllable by the Ven pin that
simply turns the PA on and off from the digital control logic
input from baseband chipsets. All of the digital control
input pins such as the Ven, Vmode and Vbp are fully CMOS
compatible and can operate down to the 1.35 V logic. The
current consumption by digital control pins is negligible.
The power amplifier is manufactured on an advanced InGaP
HBT (hetero-junction Bipolar Transistor) MMIC (microwave
monolithic integrated circuit) technology offering state-ofthe-art reliability, temperature stability and ruggedness.
• Excellent Linearity
• 3-mode power control with Vbp and Vmode
• Bypass / Mid Power Mode / High Power Mode
• High Efficiency at max output power
• 10-pin surface mounting package
• Internal 50 ohm matching networks for both RF input
and output
• Integrated coupler
• Coupler and Isolation ports for daisy chain
• Green – Lead-free and RoHS complian
Applications
• UMTS(HSPA+)/LTE Handset for Band11 and Band 21
Ordering Information
Part Number
Number of
Devices
Container
ACPM-5011-TR1
1000
178 mm (7”) Tape/Reel
ACPM-5011-BLK
100
Bulk
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage.
Description
Min.
RF Input Power (Pin)
Typ.
Max.
Unit
0
10.0
dBm
DC Supply Voltage (Vcc1, Vcc2)
0
3.4
5.0
V
Enable Voltage (Ven)
0
2.6
3.3
V
Mode Control Voltage (Vmode)
0
2.6
3.3
V
Bypass Control (Vbp)
0
2.6
3.3
V
Storage Temperature (Tstg)
-55
25
+125
°C
Description
Min.
Typ.
Max.
Unit
DC Supply Voltage (Vcc1, Vcc2)
3.2
3.4
4.2
V
Recommended Operating Condition
Enable Voltage (Ven)
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Mode Control Voltage (Vmode)
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Bypass Control Voltage (Vbp)
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
1462.9
MHz
90
°C
Operating Frequency (fo)
1427.9
Ambient Temperature (Ta)
-20
25
Operating Logic Table
Power Mode
Ven
Vmode
Vbp
Pout
(UMTS Rel99)
Pout
(LTE MPR = 0 dB, HSPA+)
High Power Mode
High
Low
Low
~ 28.5 dBm
~ 27.5 dBm
Mid Power Mode
High
High
Low
~ 17 dBm
~ 16 dBm
Bypass Mode
High
High
High
~ 7 dBm
~ 6 dBm
Shut Down Mode
Low
Low
Low
–
–
2
Electrical Characteristics
– Conditions: Vcc = 3.4 V, Ven = 2.6 V, Ta = 25° C, Zin/Zout = 50 ohm
Common Characteristics for LTE and UMTS
Condition
Min.
Typ.
Max.
Unit
1427.9
–
1462.9
MHz
High Power Mode
69
92
120
mA
Mid Power Mode
9
16
25
mA
Bypass Mode
1
3
5
mA
High Power Mode
4
100
µA
Mid Power Mode
4
100
µA
Bypass Mode
4
100
µA
Mid Power Mode
2.8
100
µA
Operating Frequency Range
Quiescent Current
Enable Current
Mode Control Current
Bypass Mode
3.8
100
µA
Bypass Control Current
Bypass
3.8
100
µA
Total Current in Power-down mode
Ven = 0 V, Vmode = 0 V, Vbp = 0 V
10
µA
Input VSWR
2:1
Stability (Spurious Output)
VSWR 5:1, All phase
-70
dBc
Phase Discontinuity
low power mode ↔ mid power mode,
at Pout = 7 dBm
mid power mode ↔ high power mode,
at Pout = 16 dBm
15
deg
3
deg
Ruggedness
Pout <27.5 dBm, Pin <10 dBm, All phase
High Power Mode
10:1
Coupling factor
RF Out to CPL port
Daisy Chain Insertion Loss
ISO port to CPL port, 698 - 2620 MHz,
Ven = Low
Characteristics for UMTS
Condition
Operating Frequency Range
Maximum Output Power (UMTS Rel99)
Gain
Power Added Efficiency
20
dB
Min.
Typ.
Max.
Unit
1427.9
–
1462.9
MHz
28.5
dBm
Mid Power Mode
17
dBm
7
dBm
High Power Mode
27.5
dBm
Mid Power Mode
16
dBm
Bypass Mode
6
High Power Mode, Pout = 27.5 dBm
25
28.5
dB
Mid Power Mode, Pout = 16 dBm
13
17.5
dB
Bypass Mode, Pout = 6 dBm
8
12
dB
41
%
High Power Mode, Pout = 28.5 dBm,
Rel99
Total Supply Current
dB
0.25
High Power Mode
Bypass Mode
Maximum Output Power
(HSPA+, MPR = 0 dB)
VSWR
dBm
High Power Mode, Pout = 27.5 dBm,
HSPA+, MPR = 0 dB
33.7
37.5
41.3
%
Mid Power Mode, Pout = 16 dBm
15.1
20.9
27.4
%
Bypass Mode, Pout = 6 dBm
3.1
6.5
11
%
High Power Mode, Pout = 27.5 dBm
400
440
490
mA
Mid Power Mode, Pout = 16 dBm
42
55
76
mA
Bypass Mode, Pout = 6 dBm
10
17
35
mA
ACLR1
Pout < (maximum power – MPR),
High Power Mode
-38
-36
dBc
ACLR2
Pout < (maximum power – MPR),
High Power Mode
-55
-46
dBc
Second
Third
High Power Mode, Pout = 27.5 dBm
-39
-52
-35
-42
dBc
dBc
Rx Band Noise Power (Vcc = 4.2 V)
High Power Mode, Pout = 27.5 dBm
-136.5
-135
dBm/Hz
GPS Band Noise Power (Vcc = 4.2 V)
High Power Mode, Pout = 27.5 dBm
-136.5
-135
dBm/Hz
ISM Band Noise Power (Vcc = 4.2 V)
High Power Mode, Pout = 27.5 dBm
-153
-143
dBm/Hz
Adjacent Channel
Leakage Ratio
Harmonic Suppression
3
Electrical Characteristics (Continued)
Characteristics for LTE
(Band 11 and Band21)
Condition
Operating Frequency Range
Maximum Output Power
(LTE, MPR = 0 dB)
Gain
Total Supply Current
Typ.
Max.
Unit
–
1462.9
MHz
High Power Mode
27.5
dBm
Mid Power Mode
16
dBm
Bypass Mode
6
High Power Mode, Pout ≤
(max power - MPR )
25
28.5
dB
Mid Power Mode, Pout ≤
(max power - MPR )
13
17.5
dB
Bypass Mode, Pout ≤ (max power - MPR )
Power Added Efficiency
Min.
1427.9
dBm
8
12
High Power Mode, Pout = 27.5 dBm
(MPR = 0 dB)
33.7
37.1
41.3
dB
%
High Power Mode, Pout = 26.5 dBm
(MPR = 1 dB)
30.2
34
37
%
Mid Power Mode, Pout = 16 dBm
(MPR = 0 dB)
15.5
21.1
27.6
%
Bypass Mode, Pout = 6 dBm
(MPR = 0 dB)
3.1
6.1
11
%
High Power Mode, Pout = 27.5 dBm
(MPR = 0 dB)
400
445
490
mA
High Power Mode, Pout = 26.5 dBm
(MPR = 1 dB)
355
390
435
mA
Mid Power Mode, Pout = 16 dBm
(MPR = 0 dB)
42
55
76
mA
Bypass Mode, Pout = 6 dBm (MPR = 0 dB)
10
18
35
mA
E-UTRAACLR
Pout < (maximum power – MPR),
High Power Mode
-37
-33
dBc
UTRAACLR1
Pout < (maximum power – MPR),
High Power Mode
-43
-36
dBc
UTRAACLR2
Pout < (maximum power – MPR),
High Power Mode
-57
-39
dBc
Second
Third
High Power Mode, Pout = 27.5
dBm
-39
-52
-35
-42
dBc
dBc
B11 High Power Mode, Pout = 26.5 dBm, 25RB,
Ch_BW = 10 MHz (averaging across 9 MHz)
B21 High Power Mode, Pout = 26.5 dBm, 25RB,
Ch_BW = 15 MHz (averaging across 13.5 MHz)
-136.5
-135
dBm/Hz
-133.5
-132
GPS Band Noise Power (Vcc = 4.2 V)
B11 High Power Mode, Pout = 26.5 dBm, 50RB
B21 High Power Mode, Pout = 26.5 dBm, 75RB
-136.5
-135
-135
-133
dBm/Hz
ISM Band Noise Power (Vcc = 4.2 V)
High Power Mode
-153
-143
dBm/Hz
LTE
Adjacent Channel
Leakage Ratio
Harmonic Suppression
Rx Band Noise Power (Vcc = 4.2 V)
4
Footprint
1.50
0.10
0.125
PIN Description
0.60
0.35
0.35
0.25
Pin #
Name
Description
1
Vcc1
DC Supply Voltage
2
RFin
RF Input
3
Vbp
Bypass Control
4
Vmode
Mode Control
5
Ven
PA Enable
6
CPL
Coupling port of Coupler
7
GND
Ground
8
ISO
Isolation port of Coupler
9
RFOut
RF Out
10
Vcc2
DC Supply Voltage
0.10
0.3
X-RAY TOP VIEW
All dimensions are in millimeter
Package Dimensions
Marking Specification
0.5
Pin 1 Mark
1
10
2
9
3
8
4
7
5
6
3 ± 0.1
All dimensions are in millimeter
5
3 ± 0.1
Pin 1 Mark
A5011
Manufacturing Part Number
PYYWW
Lot Number
P
Manufacturing Info
YY
Manufacturing Year
WW
Work Week
AAAAA Assemby Lot Number
AAAAA
0.9 ± 0.1
Metallization
PCB Design Guidelines
The recommended PCB land pattern is shown in figures
on the left side. The substrate is coated with solder mask
between the I/O and conductive paddle to protect the
gold pads from short circuit that is caused by solder
bleeding/bridging.
on 0.5 mm pitch
Ø 0.3 mm
0.45
0.30
0.60
Stencil Design Guidelines
A properly designed solder screen or stencil is required
to ensure optimum amount of solder paste is deposited
onto the PCB pads.
0.35
0.475
connected to a inner layer
through a via hole for a
better isolation between
CPL_IN(ISO) and RFout
0.55
Solder Mask Opening
0.65
0.50
0.45
1.30
0.60
0.525
1.50
Solder Paste Stencil Aperture
0.55
0.45
0.35
1.10
0.60
0.475
1.10
6
The recommended stencil layout is shown here. Reducing
the stencil opening can potentially generate more voids.
On the other hand, stencil openings larger than 100% will
lead to excessive solder paste smear or bridging across the
I/O pads or conductive paddle to adjacent I/O pads. Considering the fact that solder paste thickness will directly
affect the quality of the solder joint, a good choice is to
use laser cut stencil composed of 0.100 mm(4 mils) or
0.127 mm (5 mils) thick stainless steel which is capable of
producing the required fine stencil outline.
Evaluation Board Schematic
Vcc1
RF In
C5
2.2 µF
C4
680 pF
1 Vcc1
Vcc2 10
2 RF In
RF Out 9
C6
680 pF
C7
2.2 µF RF Out
Isolation
Vbp
Vmode
C3
100 pF
Ven
C2
100 pF
C1
100 pF
3 Vbp
ISO 8
4 Vmode
GND 7
5 Ven
CPL 6
50 ohm
Coupler
Evaluation Board Description
C5
C7
C4
C6
A5011
PYYWW
AAAAA
C3
7
Vcc2
C2
C1
Tape and Reel Information
A5011
PYYWW
AAAAA
Dimension List
Annote
Millimeter
Annote
Millimeter
A0
3.40±0.10
P2
2.00±0.05
B0
3.40±0.10
P10
40.00±0.20
K0
1.35±0.10
E
1.75±0.10
D0
1.55±0.05
F
5.50±0.05
D1
1.60±0.10
W
12.00±0.30
P0
4.00±0.10
T
0.30±0.05
P1
8.00±0.10
Tape and Reel Format – 3 mm x 3 mm
8
Reel Drawing
BACK VIEW
Shading indicates
thru slots
18.4 max.
178 +0.4
-0.2
50 min.
25
min wide (ref)
Slot for carrier tape
insertion for attachment
to reel hub (2 places 180° apart)
12.4 +2.0
-0.0
FRONT VIEW
1.5 min.
13.0 ± 0.2
21.0 ± 0.8
Plastic Reel Format (all dimensions are in millimeters)
9
NOTES:
1. Reel shall be labeled with the following
information (as a minimum).
a. manufacturers name or symbol
b. Avago Technologies part number
c. purchase order number
d. date code
e. quantity of units
2. A certificate of compliance (c of c) shall
be issued and accompany each shipment
of product.
3. Reel must not be made with or contain
ozone depleting materials.
4. All dimensions in millimeters (mm)
Handling and Storage
ESD (Electrostatic Discharge)
Electrostatic discharge occurs naturally in the environment.With the increase in voltage potential, the outlet of
neutralization or discharge will be sought. If the acquired
discharge route is through a semiconductor device, destructive damage will result.
ESD countermeasure methods should be developed and
used to control potential ESD damage during handling in
a factory environment at each manufacturing site.
MSL (Moisture Sensitivity Level)
Plastic encapsulated surface mount package is sensitive to
damage induced by absorbed moisture and temperature.
Avago Technologies follows JEDEC Standard J-STD 020B.
Each component and package type is classified for
moisture sensitivity by soaking a known dry package at
various temperatures and relative humidity, and times.
After soak, the components are subjected to three consecutive simulated reflows.
The out of bag exposure time maximum limits are determined by the classification test describe below which corresponds to a MSL classification level 6 to 1 according to the
JEDEC standard IPC/JEDEC J-STD-020B and J-STD-033.
ACPM-5011 is MSL3. Thus, according to the J-STD-033
p.11 the maximum Manufacturers Exposure Time (MET)
for this part is 168 hours. After this time period, the part
would need to be removed from the reel, de-taped and
then re-baked. MSL classification reflow temperature for
the ACPM-5011 is targeted at 260° C +0/-5° C. Figure and
table on next page show typical SMT profile for maximum
temperature of 260 +0/-5° C.
Moisture Classification Level and Floor Life
MSL Level
Floor Life (out of bag) at factory ambient = < 30° C/60% RH or as stated
1
Unlimited at = < 30° C/85% RH
2
1 year
2a
4 weeks
3
168 hours
4
72 hours
5
48 hours
5a
24 hours
6
Mandatory bake before use. After bake, must be reflowed within the time limit specified on the label
Note:
1. The MSL Level is marked on the MSL Label on each shipping bag.
10
Reflow Profile Recommendations
tp
Tp
Critical Zone
TL to Tp
Ramp-up
Temperature
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25° C to Peak
Time
Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5° C
Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5° C
Profile Feature
Sn-Pb Solder
Pb-Free Solder
Average ramp-up rate (TL to TP)
3° C/sec max
3° C/sec max
Preheat
– Temperature Min (Tsmin)
– Temperature Max (Tsmax)
– Time (min to max) (ts)
100° C
150° C
60-120 sec
150° C
200° C
60-180 sec
Tsmax to TL
– Ramp-up Rate
3° C/sec max
Time maintained above:
– Temperature (TL)
– Time (TL)
183° C
60-150 sec
217° C
60-150 sec
Peak temperature (TP)
240 +0/-5° C
260 +0/-5° C
Time within 5° C of actual Peak Temperature (TP)
10-30 sec
20-40 sec
Ramp-down Rate
6° C/sec max
6° C/sec max
Time 25° C to Peak Temperature
6 min max.
8 min max.
11
Storage Condition
Baking of Populated Boards
Packages described in this document must be stored
in sealed moisture barrier, antistatic bags. Shelf life in a
sealed moisture barrier bag is 12 months at <40° C and
90% relative humidity (RH) J-STD-033 p.7.
Some SMD packages and board materials are not able
to withstand long duration bakes at 125° C. Examples
of this are some FR-4 materials, which cannot withstand
a 24 hr bake at 125° C. Batteries and electrolytic capacitors are also temperature sensitive. With component and
board temperature restrictions in mind, choose a bake
temperature from Table 4-1 in J-STD 033; then determine
the appropriate bake duration based on the component
to be removed. For additional considerations see IPC-7711
andIPC-7721.
Out-of-Bag Time Duration
After unpacking the device must be soldered to the PCB
within 168 hours as listed in the J-STD-020B p.11 with
factory conditions <30° C and 60% RH.
Baking
It is not necessary to re-bake the part if both conditions
(storage conditions and out-of bag conditions) have been
satisfied. Baking must be done if at least one of the conditions above have not been satisfied. The baking conditions are 125° C for 12 hours J-STD-033 p.8.
CAUTION
Tape and reel materials typically cannot be baked at the
temperature described above. If out-of-bag exposure
time is exceeded, parts must be baked for a longer time
at low temperatures, or the parts must be de-reeled,
de-taped, re-baked and then put back on tape and reel.
(See moisture sensitive warning label on each shipping
bag for information of baking).
Board Rework
Component Removal, Rework and Remount
If a component is to be removed from the board, it is
recommended that localized heating be used and the
maximum body temperatures of any surface mount
component on the board not exceed 200° C. This method
will minimize moisture related component damage. If any
component temperature exceeds 200° C, the board must
be baked dry per 4-2 prior to rework and/or component
removal. Component temperatures shall be measured at
the top center of the package body. Any SMD packages
that have not exceeded their floor life can be exposed to
a maximum body temperature as high as their specified
maximum reflow temperature.
Removal for Failure Analysis
Not following the above requirements may cause moisture/
reflow damage that could hinder or completely prevent
the determination of the original failure mechanism.
12
Derating due to Factory Environmental Conditions
Factory floor life exposures for SMD packages removed
from the dry bags will be a function of the ambient environmental conditions. A safe, yet conservative, handling
approach is to expose the SMD packages only up to the
maximum time limits for each moisture sensitivity level
as shown in next table. This approach, however, does not
work if the factory humidity or temperature is greater
than the testing conditions of 30° C/60% RH. A solution
for addressing this problem is to derate the exposure
times based on the knowledge of moisture diffusion in
the component package materials ref. JESD22-A120).
Recommended equivalent total floor life exposures can
be estimated for a range of humidities and temperatures
based on the nominal plastic thickness for each device.
Table on next page lists equivalent derated floor lives for
humidities ranging from 20-90% RH for three temperature, 20° C, 25° C, and 30° C.
Table on next page is applicable to SMDs molded
with novolac, biphenyl or multifunctional epoxy mold
compounds. The following assumptions were used in calculating this table:
1. Activation Energy for diffusion = 0.35eV (smallest known
value).
2. For ≤60% RH, use Diffusivity = 0.121exp (-0.35eV/kT)
mm2/s (this used smallest known Diffusivity @ 30° C).
3. For >60% RH, use Diffusivity = 1.320exp (-0.35eV/kT)
mm2/s (this used largest known Diffusivity @ 30° C).
Recommended Equivalent Total Floor Life (days) @ 20° C, 25° C & 30° C, 35° C
For ICs with Novolac, Biphenyl and Multifunctional Epoxies (Reflow at same temperature at which the component was
classified) Maximum Percent Relative Humidity
Maximum Percent Relative Humidity
Package Type and Body Thickness
Body Thickness ≥3.1 mm
Including
PQFPs >84 pin,
PLCCs (square)
All MQFPs
or
All BGAs ≥1 mm
Moisture
Sensitivity Level
Level 2a
Level 3
Level 4
Level 5
Level 5a
Body 2.1 mm
≤ Thickness
<3.1 mm including
PLCCs (rectangular)
18-32 pin
SOICs (wide body)
SOICs ≥20 pins,
PQFPs ≤80 pins
Level 2a
Level 3
Level 4
Level 5
Level 5a
Body Thickness <2.1 mm
including
SOICs <18 pin
All TQFPs, TSOPs
or
All BGAs <1 mm body
thickness
Level 2a
Level 3
Level 4
Level 5
Level 5a
5%
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
10%
∞
∞
∞
∞
∞
∞
∞
∞
3
5
6
8
2
4
5
7
1
2
3
5
∞
∞
∞
∞
∞
∞
∞
∞
5
7
9
11
3
4
5
6
1
2
2
3
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
7
10
13
18
For product information and a complete list of distributors, please go to our web site:
20%
94
124
167
231
8
10
13
17
3
4
5
7
2
3
5
7
1
1
2
4
∞
∞
∞
∞
12
19
25
32
4
5
7
9
2
3
4
5
1
1
2
2
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
7
13
18
26
2
3
5
6
30%
44
60
78
103
7
9
11
14
3
4
5
7
2
3
4
6
1
1
2
3
∞
∞
∞
∞
9
12
15
19
3
4
5
7
2
3
3
5
1
1
2
2
∞
∞
∞
∞
∞
∞
∞
∞
7
9
12
17
3
5
6
8
1
2
3
4
40%
32
41
53
69
6
8
10
13
2
4
5
7
2
2
4
5
1
1
2
3
58
86
148
∞
7
9
12
15
3
4
5
6
2
2
3
4
1
1
2
2
∞
∞
∞
∞
∞
∞
∞
∞
4
5
7
9
2
3
4
6
1
1
2
3
50%
26
33
42
57
6
7
9
12
2
3
5
7
1
2
3
5
1
1
2
3
30
39
51
69
6
8
10
13
2
3
4
6
2
2
3
4
1
1
2
2
∞
∞
∞
∞
8
11
14
20
3
4
5
7
2
2
3
5
1
1
2
2
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved.
AV02-2837EN - February 8, 2011
60%
16
28
36
47
6
7
9
12
2
3
4
6
1
2
3
4
1
1
2
2
22
28
37
49
5
7
9
12
2
3
4
5
1
2
3
4
1
1
2
2
17
28
∞
∞
5
7
10
13
2
3
4
6
1
2
3
4
1
1
2
2
70%
7
10
14
19
4
5
7
10
2
3
3
5
1
2
2
3
1
1
1
2
3
4
6
8
2
3
5
7
1
2
3
4
1
1
2
3
1
1
1
2
1
1
2
2
1
1
2
2
1
1
2
2
1
1
2
2
1
1
1
2
80%
5
7
10
13
3
4
6
8
1
2
3
4
1
1
2
3
1
1
1
2
2
3
4
5
2
2
3
5
1
2
2
3
1
1
1
3
0.5
0.5
1
2
0.5
1
1
2
0.5
1
1
2
0.5
1
1
2
0.5
1
1
2
0.5
1
1
2
90%
4
6
8
10
3
4
5
7
1
2
3
4
1
1
2
3
1
1
1
2
1
2
3
4
1
2
3
4
1
1
2
3
1
1
1
2
0.5
0.5
1
1
0.5
1
1
1
0.5
1
1
1
0.5
1
1
1
0.5
1
1
1
0.5
0.5
1
1
35° C
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25° C
20° C
35° C
30° C
25° C
20° C
35° C
30° C
25° C
20° C
35° C
30° C
25° C
20° C
35° C
30° C
25° C
20° C
35° C
30° C
25° C
20° C
35° C
30° C
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35° C
30° C
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35° C
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35° C
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35° C
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