IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS(on) ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 3 A IDM TC = 25°C, Pulse Width Limited by TJM 24 A IA EAS TC = 25°C TC = 25°C 3 500 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 125 W - 55 ... +150 150 - 55 ... +150 °C °C °C TJ TJM Tstg G z z z 300 °C z TSOLD Plastic Body for 10 seconds 260 °C z FC Mounting Torque 1.13 / 10 Nm/lb.in VISOL 50/60 Hz, RM, t = 1min 2500 V~ 5 g z z z BVDSS VGS = 0V, ID = 250μA 1500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 3A, Note 1 V z z z ±100 nA TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification Easy to Mount Space Savings High Power Density Applications V 5.0 = Drain Advantages z Characteristic Values Min. Typ. Max. D Features 1.6mm (0.062 in.) from Case for 10s Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Isolated Tab S G = Gate S = Source TL Weight D High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits 25 μA 250 μA 3.85 Ω DS100448A(6/13) IXTJ6N150 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 4.0 VDS = 20V, ID = 3A, Note 1 Ciss Coss 6.5 mS 2230 pF 170 pF 64 pF 22 ns 20 ns 50 ns 38 ns 67 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 3A RG = 3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 3A 12 nC 36 nC 0.30 1.0 °C/W °C/W Qgd RthJC RthCS ISO TO-247 (IXTJ) OUTLINE PINS: 1 = Gate 2 = Drain 3 = Source 4 = Isolated Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 6 A Repetitive, Pulse Width Limited by TJM 24 A VSD IF = 6A, VGS = 0V, Note 1 1.3 V trr IF = 3A, -di/dt = 100A/μs IRM QRM Note: VR = 100V, VGS = 0V 1.5 μs 12.0 A 9.0 μC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTJ6N150 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 10 6 VGS = 10V VGS = 10V 9 5 8 7V 7V 7 ID - Amperes ID - Amperes 4 3 6V 2 6 5 4 3 6V 2 1 1 5V 0 5V 0 0 2 4 6 8 10 12 14 16 18 0 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature 6 35 3.4 VGS = 10V 7V VGS = 10V 3.0 4 R DS(on) - Normalized 5 ID - Amperes 5 VDS - Volts 6V 3 2 2.6 I D = 6A 2.2 I D = 3A 1.8 1.4 1.0 1 5V 0.6 0 0.2 0 5 10 15 20 25 30 35 -50 40 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 3.5 2.8 VGS = 10V 2.6 3 TJ = 125ºC 2.5 2.2 ID - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 1.4 2 1.5 1 TJ = 25ºC 1.2 0.5 1.0 0 0.8 0 1 2 3 4 5 6 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 7 8 9 10 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTJ6N150 Fig. 8. Transconductance Fig. 7. Input Admittance 9 12 TJ = - 40ºC 8 10 7 TJ = 125ºC 25ºC - 40ºC 5 4 3 25ºC 8 g f s - Siemens ID - Amperes 6 6 125ºC 4 2 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 1 2 3 VGS - Volts 5 6 7 8 9 Fig. 10. Gate Charge 10 18 9 16 8 14 7 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 12 10 8 VDS = 750V I D = 3A I G = 10mA 6 5 4 TJ = 125ºC 6 4 ID - Amperes 3 TJ = 25ºC 4 2 1 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 f = 1 MHz 25µs Ciss 1,000 100µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit 10 Coss 1ms 1 100 10ms 0.1 Crss TJ = 150ºC 100ms TC = 25ºC DC Single Pulse 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTJ6N150 Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N150 (6N)02-23-12