ON MPS6560G Audio transistor npn silicon Datasheet

MPS6560
Audio Transistor
NPN Silicon
Features
• Pb−Free Package is Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
25
Vdc
Collector −Base Voltage
VCBO
25
Vdc
Emitter −Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
TO−92
CASE 29−11
STYLE 1
1
2
MPS
6560
AYWW G
G
3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RqJA is measured with the device soldered into a typical printed circuit board.
MPS6560
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS6560
MPS6560G
Package
Shipping †
TO−92
5,000 Units/Box
TO−92
(Pb−Free)
5,000 Units/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
MPS6560/D
MPS6560
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
25
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
25
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
−
100
nAdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
−
100
nAdc
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0)
IEBO
−
100
nAdc
35
50
50
−
−
200
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
0.5
Vdc
Base −Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
1.2
Vdc
fT
60
−
MHz
Cobo
−
30
pF
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
MPS6560
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPS6560/D
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