Diodes DMMT5551 Matched npn small signal surface mount transistor Datasheet

DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
•
A
Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Low Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6)
B C
H
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking Information: K4R & K4T, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings
SOT-26
K
M
J
E1
D
E2
C2
F
L
C1
E1
C2
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
⎯
⎯
0.95
F
⎯
⎯
0.55
H
2.90
3.10
3.00
J
0.013
0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
α
0°
8°
⎯
All Dimensions in mm
C1
B2
B1
B1
E2
B2
DMMT5551S
DMMT5551
(K4R Marking Code) (K4T Marking Code)
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
Thermal Resistance, Junction to Ambient (Note 2)
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Value
180
160
6.0
200
300
417
Unit
V
V
V
mA
mW
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Notes:
1.
2.
3.
4.
5.
6.
Built with adjacent die from a single wafer.
Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30436 Rev. 8 - 2
1 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
180
160
6.0
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
50
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
IEBO
⎯
50
V
V
V
nA
μA
nA
DC Current Gain (Note 8)
hFE
80
80
30
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
250
⎯
0.15
0.20
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
6.0
pF
Small Signal Current Gain
hFE
50
250
⎯
Current Gain-Bandwidth Product
fT
100
300
MHz
Noise Figure
NF
⎯
8.0
dB
V
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
VEB = 4.0V, IC = 0
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 200μA,
RS = 1.0kΩ, f = 1.0kHz
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, hFE, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage,
VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.
400
0.15
350
0.14
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
Notes:
⎯
Test Condition
300
250
200
150
100
50
0
0
25
DS30436 Rev. 8 - 2
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
0.13
0.12
0.11
2 of 4
www.diodes.com
T A = 150°C
0.10
0.09
0.08
TA = 25°C
0.07
0.06
0.05
0.04
1
200
IC
IB = 10
TA = -50°C
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
DMMT5551/DMMT5551S
© Diodes Incorporated
1,000
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
hFE, DC CURRENT GAIN
TA = 150°C
100
TA = 25°C
TA = -50°C
10
1
1
VCE = 5V
0.9
TA = -50°C
0.8
0.7
0.6
TA = 25°C
0.5
0.4
TA = 150°C
0.3
0.2
0.1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
Ordering Information (Note 6 & 9 )
Device
DMMT5551-7-F
DMMT5551S-7-F
Notes:
Packaging
SOT-26
SOT-26
Shipping
3000/Tape & Reel
3000/Tape & Reel
9. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4R
C1
B1
E1
C1
C2
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
K4T
B2
E2
B1
C2
YM
E2
YM
E1
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
B2
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30436 Rev. 8 - 2
3 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30436 Rev. 8 - 2
4 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
Similar pages