CYStech Electronics Corp. Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTN9240J3 BVDSS ID RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=25A RDS(ON)@VGS=4.5V, ID=25A 100V 33A 36mΩ(typ) 38mΩ(typ) 39mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN9240J3 TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTN9240J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN9240J3 CYStek Product Specification Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.3mH, ID=32A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range VDS VGS 100 ±20 33 23 90 32 154 9 115 57.5 -55~+175 ID IDM IAS EAS EAR Pd Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Rth,j-a Value 1.3 50 (Note) 110 Unit °C/W Note : When mounted on the minimum pad size recommended (PCB mount). Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic *Qg *Qgs *Qgd MTN9240J3 Min. Typ. Max. Unit Test Conditions 100 1 - 1.4 36 38 39 24 2 ±100 1 25 45 45 50 - V V nA VGS=0V, ID=250μA VDS = VGS, ID=250μA VGS=±20, VDS=0V VDS =100V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=25A VGS =5V, ID=25A VGS =4.5V, ID=25A VDS =10V, ID=20A - 21 3 10 - μA mΩ S nC VDS=80V, ID=25A, VGS=10V CYStek Product Specification CYStech Electronics Corp. *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 11 34 62 32 1180 114 60 - - 0.88 56 230 33 90 1.2 - Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 3/ 9 ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IF=25A, VGS=0V IF=25A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTN9240J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 5V 80 ID, Drain Current(A) 70 60 50 BVDSS, Normalized Drain-Source Breakdown Voltage 90 VGS=4V 40 VGS=3V 30 20 VGS=2V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 10 0.4 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) -60 10 Static Drain-Source On-State resistance vs Drain Current 180 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 10000 VGS=2.5V 1000 VGS=3V VGS=4.5V 100 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 3 180 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) -20 ID=25A 160 140 120 100 80 60 40 2.5 VGS=10V, ID=25A 2 1.5 1 0.5 20 0 0 0 MTN9240J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), NormalizedThreshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 20 Forward Transfer Admittance vs Drain Current 140 180 10 VDS=20V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance 100 Gate Charge Characteristics 100 10 1 VDS=10V Pulsed Ta=25°C 0.1 8 VDS=50V VDS=80V 6 4 2 ID=25A 0 0.01 0.01 0.1 1 10 ID, Drain Current(A) 0 100 100 ID, Maximum Drain Current(A) 100μs 10 1ms 10ms 1 TC=25°C, Tj=175°C VGS=10V, RθJC=1.3°C/W Single Pulse 10 15 20 Qg, Total Gate Charge(nC) 25 40 10μs RDS(on) limited 5 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 60 Tj, Junction Temperature(°C) 100ms DC 35 30 25 20 15 10 5 0 0.1 0.1 MTN9240J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 6/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 125 100 VDS=10V PD, Power Dissipation(W) 90 ID, Drain Current (A) 80 70 60 50 40 30 20 100 75 50 25 10 0 0 0 2 4 6 8 VGS , Gate-Source Voltage(V) 10 0 25 50 75 100 125 150 175 200 TC , Case Temperature(℃) Transient Thermal Response Curves ZθJC(t), Thermal Response 10 1 D=0.5 1.ZθJC(t)=1.3 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN9240J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTN9240J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 8/ 9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN9240J3 CYStek Product Specification Spec. No. : C574J3 Issued Date : 2012.08.17 Revised Date : 2013.12.26 Page No. : 9/ 9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name 9240 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN9240J3 CYStek Product Specification