DMN3012LFG Green 30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Features and Benefits Device BVDSS RDS(ON) max Q1 30V 12mΩ @ VGS = 5V, ID = 15A Q2 30V 6mΩ @ VGS = 5V, ID = 15A Description and Applications 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Mechanical Data making it ideal for high efficiency power management applications. Case: PowerDI 3333-8 (Type D) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.044 grams (Approximate) DC-DC Converters Power Management Functions ® PowerDI3333-8 (Type D) Pin1 D1 S1/D2 D1 S1/D2 S2 G1 S1/D2 S1/D2 Top View G2 Top View Pin Configuration Bottom View Ordering Information (Note 4) Part Number DMN3012LFG-7 DMN3012LFG-13 Notes: Case PowerDI3333-8 (Type D) PowerDI3333-8 (Type D) Packaging 1000 / Tape & Reel 3000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. YYWW Marking Information N04 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) N04 G72 PowerDI is a registered trademark of Diodes Incorporated. DMN3012LFG Document number: DS38967 Rev. 5 - 2 1 of 10 www.diodes.com October 2017 © Diodes Incorporated DMN3012LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS = 5V TC = +25C TC = +70C TA = +25C TA = +70C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 5) Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH Q1 Q2 ID 30 ±10 20 16 ID 10 8 70 2.7 34 58 IDM IS IAS EAS Unit V V A A 100 3.2 50 125 A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Symbol TC = +25°C TC = +70°C Steady State t<10s Value 2.2 1.4 58 36 9.5 -55 to +150 PD RJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJC TJ, TSTG Unit W °C/W °C Electrical Characteristics Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge at VTH Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge DMN3012LFG Document number: DS38967 Rev. 5 - 2 Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) RDS(ON) |Yfs| VSD 1 — — — — 10.5 27 — 2.1 12 — 1.0 V mΩ S V VDS = VGS, ID = 250μA VGS = 5V, ID = 15A VDS = 5V, ID = 15A VGS = 0V, IS = 15A Ciss Coss Crss — — — 650 314 12 850 410 16 pF VDS = 15V, VGS = 0V, f = 1.0MHz Rg — 1.63 3.3 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Qg Qg(TH) Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — 4.7 0.91 1.6 0.9 5.1 2.7 6.4 2.3 24.5 8.3 6.1 — — — 7.7 — 9.6 — — — nC VDS = 15V, ID = 15A ns VDD = 15V, VGS = 4.5V, ID = 15A, RG = 2Ω ns nC IF = 15A, di/dt = 300A/μs 2 of 10 www.diodes.com Test Condition October 2017 © Diodes Incorporated DMN3012LFG Electrical Characteristics Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge at VTH Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 — — — — — — 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) RDS(ON) |Yfs| VSD 0.75 — — — — 5.2 46 — 1.15 6 — 1.0 V mΩ S V VDS = VGS, ID = 250μA VGS = 5V, ID = 15A VDS = 5V, ID = 15A VGS = 0V, IS = 15A Ciss Coss Crss Rg Qg Qg(TH) Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1137 620 24 0.54 9.7 0.96 1.7 1.2 4.4 3.5 12.4 2.9 30.5 10.8 1480 810 32 1.1 12.6 — — — 6.6 — 18.6 — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 15A VDD = 15V, VGS = 4.5V, ID = 15A, RG = 2Ω IF = 15A, di/dt = 300A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. Typical Circuit DMN3012LFG Document number: DS38967 Rev. 5 - 2 3 of 10 www.diodes.com October 2017 © Diodes Incorporated DMN3012LFG 50.0 50.0 VGS = 3.5V 45.0 VGS = 4.0V VGS = 4.5V 35.0 VGS = 3.0V 30.0 25.0 VGS = 3.0V 40.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40.0 VGS = 2.5V 45.0 VGS = 5.0V 20.0 VGS = 2.5V 15.0 10.0 VGS = 3.5V 35.0 VGS = 2.0V 30.0 VGS = 4.0V 25.0 VGS = 4.5V 20.0 VGS = 5.0V 15.0 10.0 5.0 5.0 VGS = 2.0V 0.0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Q1 Typical Output Characteristic Figure 2. Q2 Typical Output Characteristic 5 30 VDS = 5V VDS = 5V 25 ID, DRAIN CURRENT (A) 25 20 15 TJ = 150oC TJ = 125oC 10 TJ = 85oC TJ = 25oC 5 20 15 TJ = 150oC 10 TJ = 125oC TJ = 85oC 5 TJ = 25oC TJ = -55oC TJ = -55oC 0 0 0 0.5 1 1.5 2 2.5 0 3 VGS, GATE-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.015 0.013 0.011 VGS = 5V 0.009 0.007 0.005 0 5 10 15 20 25 0.5 1 1.5 2 2.5 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Q2 Typical Transfer Characteristic Figure 3. Q1 Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 3 VDS, DRAIN-SOURCE VOLTAGE (V) 30 ID, DRAIN CURRENT (A) VGS = 1.5V VGS = 1.3V 0.01 0.008 0.006 VGS = 5V 0.004 0.002 30 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) Figure 5. Q1 Typical On-Resistance vs. Drain Current and Gate Voltage Figure 6. Q2 Typical On-Resistance vs. Drain Current and Gate Voltage DMN3012LFG Document number: DS38967 Rev. 5 - 2 4 of 10 www.diodes.com October 2017 © Diodes Incorporated 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN3012LFG VGS = 5.0V 0.018 0.016 TJ = 150oC TJ = 125oC 0.014 0.012 0.01 0.008 TJ = 25oC TJ = 85oC 0.006 TJ = -55oC 0.004 0.002 0.01 VGS = 5.0V 0.008 0.006 0.004 TJ = -55oC 0 0 5 10 15 20 25 30 0 ID, DRAIN CURRENT (A) Figure 7. Q1 Typical On-Resistance vs. Drain Current and Temperature VGS = 5V, ID = 15A 1.2 0.9 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 8. Q2 Typical On-Resistance vs. Drain Current and Temperature 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TJ = 25oC TJ = 85oC 0.002 0 1.2 VGS = 5V, ID = 15A 0.9 0.6 0.6 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) Figure 9. Q1 On-Resistance Variation with Temperature 0.02 0.015 VGS = 5V, ID = 15A 0.01 0.005 0 -50 -25 0 25 50 75 100 125 Document number: DS38967 Rev. 5 - 2 0 25 50 75 100 125 150 0.01 0.008 VGS = 5V, ID = 15A 0.006 0.004 0.002 150 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 12. Q2 On-Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 11. Q1 On-Resistance Variation with Temperature DMN3012LFG -25 TJ, JUNCTION TEMPERATURE (℃) Figure 10. Q2 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = 150oC TJ = 125oC 5 of 10 www.diodes.com October 2017 © Diodes Incorporated DMN3012LFG 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 ID = 1mA 1.4 1.2 1 ID = 250µA 0.8 0.6 0.4 0.2 1.8 1.6 1.4 1.2 ID = 1mA 1 0.8 0.6 ID = 250µA 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 -50 30 25 50 75 100 125 150 30 VGS = 0V VGS = 0V 25 IS, SOURCE CURRENT (A) 25 IS, SOURCE CURRENT (A) 0 TJ, JUNCTION TEMPERATURE (℃) Figure 14. Q2 Gate Threshold Variation vs. Junciton Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 13. Q1 Gate Threshold Variation vs. Junciton Temperature 20 15 TJ = 150oC TJ = 125oC 10 TJ = 85oC TJ = 25oC 5 20 15 TJ = 150oC 10 TJ = 125oC TJ = 85oC 5 TJ = 25oC TJ = -55oC TJ = -55oC 0 0 0 0.3 0.6 0.9 0 1.2 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 16. Q2 Diode Forward Voltage vs. Current VSD, SOURCE-DRAIN VOLTAGE (V) Figure 15. Q1 Diode Forward Voltage vs. Current 10000 100000 TJ = 150oC TJ = 150oC 10000 1000 IDSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) -25 TJ = 125oC 100 TJ = 85oC 10 TJ = 25oC 1 1000 TJ = 125oC 100 TJ = 85oC 0.1 10 TJ = 25oC 1 0.1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 17. Q1 Typical Drain-Source Leakage Current vs. Voltage DMN3012LFG Document number: DS38967 Rev. 5 - 2 6 of 10 www.diodes.com 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 18. Q2 Typical Drain-Source Leakage Current vs. Voltage October 2017 © Diodes Incorporated 4.5 4.5 4 4 3.5 3.5 3 3 VGS (V) VGS (V) DMN3012LFG 2.5 2 1.5 2.5 VDS = 15V, ID = 15A 2 1.5 VDS = 15V, ID = 15A 1 1 0.5 0.5 0 0 0 2 4 6 8 0 10 1 2 3 4 5 Qg (nC) Qg (nC) Figure 19. Q1 Gate Charge Figure 20. Q2 Gate Charge 100 1000 RDS(ON) Limited PW = 100µs RDS(ON) Limited PW = 1ms PW = 100µs 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 DC 1 0.1 0.01 PW = 10s TJ(Max) = 150℃ TC = 25℃ PW = 1s Single Pulse DUT on 1*MRP PW = 100ms PW = 10ms Board VGS = 5V P = 1ms 1 DC 1 0.1 W 0.1 10 10 TJ(Max) = 150℃ PW = 10s TC = 25℃ Single Pulse PW = 1s DUT on 1*MRP PW = 100ms Board VGS = 5V P = 10ms W 0.01 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22. Q2 SOA, Safe Operation Area Figure 21. Q1 SOA, Safe Operation Area P(pk), PEAK TRANSIENT POWER (W) 600 Single Pulse RθJA = 112℃/W RθJA (t) = RθJA * r(t) TJ - TA = P * RθJA (t) 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 23. Single Pulse Maximum Power Dissipation DMN3012LFG Document number: DS38967 Rev. 5 - 2 7 of 10 www.diodes.com October 2017 © Diodes Incorporated DMN3012LFG r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.7 D=0.5 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 112℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 24. Transient Thermal Resistance DMN3012LFG Document number: DS38967 Rev. 5 - 2 8 of 10 www.diodes.com October 2017 © Diodes Incorporated DMN3012LFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type D) A1 A3 A A3a La D D2 b2 1 E E2 d k PIN# 1 I.D. k1 b z e L PowerDI33330-8 (Type D) Dim Min Max Typ A 1.17 1.23 1.20 A1 0.00 0.05 0.02 A3 0.15 0.25 0.20 A3a 0.05 0.15 0.10 b 0.30 0.40 0.35 b2 0.95 1.05 1.00 D 3.20 3.40 3.30 D2 2.65 2.75 2.70 E 3.20 3.40 3.30 E2 1.75 1.85 1.80 d 0.15 0.25 0.20 e --0.65 k --0.30 k1 0.21 0.31 0.26 L 0.40 0.50 0.45 La 0.15 0.25 0.20 z 0.25 0.35 0.30 All Dimensions in mm These exposed die clip may vary Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type D) X4 X3 X2 Dimensions C Y2 Y3 Y4 Y1 C X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.450 1.100 2.400 2.800 3.500 0.650 0.300 1.390 1.900 3.600 Y(7x) X1 DMN3012LFG Document number: DS38967 Rev. 5 - 2 X(6x) 9 of 10 www.diodes.com October 2017 © Diodes Incorporated DMN3012LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMN3012LFG Document number: DS38967 Rev. 5 - 2 10 of 10 www.diodes.com October 2017 © Diodes Incorporated