Fairchild FDS8949 Dual n-channel logic level powertrenchâ® mosfet Datasheet

FDS8949_F085
Dual N-Channel Logic Level PowerTrench® MOSFET
tm
40V, 6A, 29mΩ
Features
General Description
„ Max rDS(on) = 29mΩ at VGS = 10V
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench® process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
„ Max rDS(on) = 36mΩ at VGS = 4.5V
„ Low gate charge
„ High performance trench technology for extremely low
rDS(on)
„ High power and current handling capability
„ Qualified to AEC Q101
Applications
„ RoHS compliant
„ Inverter
„ Power suppliers
D2
D2
D1
D1
G2
SO-8
S1
Pin 1
G1
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
EAS
Drain-Source Avalanche Energy
(Note 3)
±20
V
6
A
26
mJ
2
Power Dissipation for Single Operation
TJ, TSTG
Units
V
20
Power Dissipation for Dual Operation
PD
Ratings
40
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
1.6
W
0.9
°C
-55 to 150
Thermal Characteristics
RθJA
Thermal Resistance-Single operation, Junction to Ambient
(Note 1a)
81
RθJA
Thermal Resistance-Single operation, Junction to Ambient
(Note 1b)
135
RθJC
Thermal Resistance, Junction to Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDS8949
Device
FDS8949_F085
©2010 Fairchild Semiconductor Corporation
FDS8949_F085 Rev. A
Reel Size
13’’
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET
February 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
40
ID = 250µA, referenced to 25°C
V
mV/°C
33
1
µA
10
µA
±100
nA
3
V
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V,VDS = 0V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
1
1.9
-4.6
mV/°C
VGS = 10V, ID = 6A
21
29
VGS = 4.5V, ID = 4.5A
26
36
VGS = 10V, ID = 6A,TJ = 125°C
29
43
VDS = 10V,ID = 6A
22
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
715
955
pF
105
140
pF
60
90
pF
Ω
1.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
VDS = 20V, ID = 6A,VGS = 5V
9
18
ns
5
10
ns
23
37
ns
3
6
ns
7.7
11
nC
2.4
nC
2.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2)
0.8
1.2
V
trr
Reverse Recovery Time (note 3)
17
26
ns
Qrr
Reverse Recovery Charge
7
11
nC
IF = 6A, diF/dt = 100A/µs
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 81°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimum pad .
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V.
FDS8949_F085 Rev. A
2
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FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
20
ID, DRAIN CURRENT (A)
16
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3.0
VGS = 10V
VGS = 3.5V
VGS = 4.5V
12
VGS = 3.0V
8
4
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
2.5
VGS = 3.0V
2.0
VGS = 3.5V
1.5
VGS = 4.5V
1.0
0.5
VGS = 10V
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
70
1.6
ID = 6A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
VDD = 10V
12
TJ = 125oC
8
TJ = 25oC
TJ = -55oC
4
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
FDS8949_F085 Rev. A
50
40
TJ = 125oC
30
20
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
100
IS, REVERSE DRAIN CURRENT (A)
16
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
Figure 4. On-Resistance vs Gate to Source
Voltage
20
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
ID = 3.5A
60
10
Figure 3. Normalized On Resistance vs Junction
Temperature
ID, DRAIN CURRENT (A)
16
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
4
8
12
ID, DRAIN CURRENT(A)
VGS = 0V
10
1
TJ = 125oC
TJ = 25oC
0.1
0.01
1E-3
0.2
TJ = -55oC
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3
10
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 10V
Ciss
VDD = 30V
VDD = 20V
6
CAPACITANCE (pF)
8
4
2
0
0
4
8
12
Qg, GATE CHARGE(nC)
Crss
10
16
f = 1MHz
VGS = 0V
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 8. Capacitance vs Drain to Source Voltage
10
7
6
1
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
10
1
Figure 7. Gate Charge Characteristics
TJ = 25oC
TJ = 125oC
0.1
-3
10
-2
10
-1
0
1
2
VGS = 10V
4
3
VGS = 4.5V
2
1
o
RθJA = 81 C/W
0
25
10
50
75
100
125
150
TA, Ambient TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
10
100us
1
10ms
P(PK), PEAK TRANSIENT POWER (W)
100
1ms
LIMITED BY
PACKAGE
0.1
5
3
10
10
10
10
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
ID, DRAIN CURRENT (A)
Coss
2
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
0.01
0.1
100ms
1s
SINGLE PULSE
TJ = MAX RATED
10s
DC
TA = 25oC
1
10
100 300
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
FDS8949_F085 Rev. A
VGS = 10V
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
10
SINGLE PULSE
1
0.7 -4
10
-3
10
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
2
10
3
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
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FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P(PK)
t1
t2
0.01
RθJA(t) = r(t)*RθJA
RθJA = 135oC/W
SINGLE PULSE
1E-3
-3
10
TJ-TA =P*RθJA
DUTY FACTOR: D = t1/t2
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDS8949_F085 Rev. A
5
www.fairchildsemi.com
FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
FDS8949_F085 Rev. A
6
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FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET
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intended to be an exhaustive list of all such trademarks.
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Saving our world, 1mW/W/kW at a time™
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