isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BU406F/407F DESCRIPTION ·High Voltage ·Fast Switching Speed: toff= 0.75μs (Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector-Emitter Voltage VBE=0 VALUE BU406F 400 BU407F 330 BU406F 200 BU407F 150 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 18 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BU406F/407F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS BU406F MIN TYP. MAX UNIT 200 IC= 200mA ; IB= 0; L= 25mH V 150 BU407F VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V Collector Cutoff Current VCE= VCESmax; VBE= 0 0.05 1 mA BU406F VCE= 250V; VBE= 0 VCE= 350V; VBE= 0;TJ=150℃ 0.1 1 BU407F VCE= 200V; VBE= 0 VCE= 200V; VBE= 0;TJ=150℃ 0.1 1 ICES ICES IEBO Collector Cutoff Current B B Emitter Cutoff Current VEB= 5V; IC= 0 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V toff Turn-Off Time IC= 5A; IB1= -IB2= 0.5A isc Website：www.iscsemi.cn 2 mA 1 4 mA MHz 0.75 μs