IRF IRHLYS77034CM Simple drive requirement Datasheet

PRELIMINARY
PD-97291
2N7607T3
IRHLYS77034CM
60V, N-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
TECHNOLOGY
™
Product Summary
Part Number
IRHLYS77034CM
Radiation Level
100K Rads (Si)
RDS(on)
0.045Ω
ID
20A*
IRHLYS73034CM
300K Rads (Si)
0.045Ω
20A*
Low-Ohmic
TO-257AA
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available IRHLYS797034CM
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC =100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
20*
20*
80
75
0.6
±10
98
20
7.5
6.9
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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03/01/11
PRELIMINARY
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
60
—
—
V
—
0.07
—
V/°C
—
—
0.045
Ω
1.0
—
19
—
—
—
-5.0
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
nA
VGS = 4.5V, ID = 20 Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
34
8.0
13
30
7.0
60
20
—
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2025
484
5.1
—
—
—
Rg
Gate Resistance
1.16
VDS = VGS, ID = 250µA
nC
VDS = 10V, IDS = 20A Ã
VDS= 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 20A
VDS = 30V
ns
VDD = 30V, ID = 20A,
VGS = 5.0V, RG = 7.5Ω
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
pF
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
nH
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
20*
80
1.2
200
705
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 20A, VGS = 0V Ã
Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
1.67
80
Units
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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PRELIMINARY
Radiation Characteristics
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)1
Units
Test Conditions
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
10
µA
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS = 48V, VGS=0V
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (Low Ohmic TO-257)
—
0.045
Ω
VGS = 4.5V, ID = 20A
—
0.045
Ω
VGS = 4.5V, ID = 20A
Diode Forward Voltage„
—
1.2
V
VGS = 0V, ID = 20A
V
nA
1. Part numbers IRHLYS77034, IRHLYS73034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Energy
Range
(MeV/(mg/cm ))
LET
(MeV)
(µm)
0V
-1V
-2V
-3V
-4V
-5V
-6V
-7V
Kr
37.3
400
48.6
60
60
60
60
60
60
60
35
Xe
Au
63.3
90
435
1480
38.4
80.4
60
60
60
-
60
-
60
-
60
-
-
-
-
VDS
2
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
70
60
50
40
30
20
10
0
Kr
Xe
Au
0
-1
-2
-3
-4
-5
-6
-7
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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PRELIMINARY
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.25V
10
1
2.25V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.25V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
2.25V
60µs PULSE WIDTH
Tj = 150°C
1
100
0.1
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 150°C
10
T J = 25°C
1
VDS = 25V
15 WIDTH
60µs PULSE
0.1
ID = 20A
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.5
3
3.5
4
4.5
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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PRELIMINARY
IRHLYS77034CM, 2N7607T3
100
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (mΩ)
Pre-Irradiation
ID = 20A
90
80
70
60
T J = 150°C
50
40
30
20
T J = 25°C
10
0
2
4
6
8
10
100
90
80
T J = 150°C
70
60
50
T J = 25°C
40
30
20
Vgs = 4.5V
10
12
0
10
20
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
40
50
60
70
80
Fig 6. Typical On-Resistance Vs
Drain Current
90
2.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
30
ID, Drain Current (A)
80
70
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
PRELIMINARY
IRHLYS77034CM, 2N7607T3
3600
12
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
2800
ID = 20A
VGS, Gate-to-Source Voltage (V)
3200
C, Capacitance (pF)
Pre-Irradiation
C oss = C ds + C gd
2400
Ciss
2000
Coss
1600
1200
800
Crss
400
0
1
10
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
100
0
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
35
100
LIMITED BY PACKAGE
T J = 150°C
30
10
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
5 10 15 20 25 30 35 40 45 50 55 60
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 25°C
1
0.1
25
20
15
10
5
VGS = 0V
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
VDS = 48V
VDS = 30V
VDS = 12V
1.6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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PRELIMINARY
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
200
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
1
0.1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
ID
8.9A
12.6A
BOTTOM
20A
180
TOP
160
140
120
100
80
60
40
20
0
1
10
100
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
1
D = 0.50
P DM
0.20
SINGLE PULSE
( THERMAL RESPONSE )
0.10
0.05
0.1
0.02
0.01
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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PRELIMINARY
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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PRELIMINARY
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L = 0.49 mH
Peak IL = 20A, VGS = 10V
 ISD ≤ 20A, di/dt ≤ 347A/µs,
VDD ≤ 60V, TJ ≤ 150°C
10 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low Ohmic TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
1
2
5.08 [.200]
4.83 [.190]
1.14 [.045]
0.89 [.035]
B
10.92 [.430]
10.42 [.410]
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
STANDARD
PIN-OUT
OPTIONAL
PIN-OUT
3.05 [.120]
B
PIN ASSIGNMENTS
NOT ES :
1.
2.
3.
4.
CERAMIC EYELETS
1 = DRAIN
DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2011
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