Order this document by BC368/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 20 Vdc Collector – Emitter Voltage VCES 25 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 — — Vdc Collector – Base Breakdown Voltage (IC = 100 µA, IE = 0 ) V(BR)CBO 25 — — Vdc Emitter – Base Breakdown Voltage (IE = 100 µA, IC = 0) V(BR)EBO 5.0 — — Vdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) ICBO — — — — 10 1.0 µAdc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO — — 10 µAdc 50 85 60 — — — — 375 — Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) hFE — fT 65 — — MHz Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) — — 0.5 V Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) — — 1.0 V Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE, CURRENT GAIN 200 100 70 50 VCE = 1.0 V TJ = 25°C 20 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25°C 0.8 0.6 50 mA 1000 mA 0.2 20 50 100 –0.8 θ VB , TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 250 mA Figure 2. Collector Saturation Region 1.0 VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) –1.2 –1.6 –2.0 θVB for VBE –2.4 –2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. “On” Voltages 300 160 TJ = 25°C 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 500 mA IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) Figure 1. DC Current Gain 2 100 mA 0.4 100 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 1000 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current–Gain — Bandwidth Product Figure 6. Capacitance 20 4.0 25 5.0 Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE 3 Motorola reserves the right to make changes without further notice to any products herein. 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