PHOTODIODE GaAs PIN photodiode G8522 series High-speed response at low reverse voltage G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low reverse voltage (2 V or less). Please contact our sales office with your specific needs. Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channels l Gigabit Ethernet G8522-01: 3 GHz Min. (VR=2 V) G8522-02: 1.9 GHz Min. (VR=2 V) G8522-03: 1.5 GHz Min. (VR=2 V) l Low noise, low dark current l Low terminal capacitance ■ Absolute maximum ratings (Ta=25 °C) Parameter Symbol Reverse voltage VR Max. Operating Topr temperature Storage Tstg temperature Value 30 Unit V -40 to +85 °C -55 to +125 °C ■ Electrical and optical characteristics (Ta=25 °C) Condition G8522-01 Typ. Max. φ40 470 to 870 G8522-02 Typ. Max. φ80 470 to 870 Parameter Symbol Active area size Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency - Min. - λ - λp - 850 - - 850 - 0.45 - 0.5 2 50 0.45 - 0.5 8 200 Min. - Min. - G8522-03 Typ. Max. φ120 470 to 870 Unit µm nm 850 - nm 0.45 - 0.5 20 500 A/W pA S ID λ=850 nm VR=5 V Ct VR=2 V, f=1 MHz - 0.3 0.45 - 0.45 0.65 - 0.8 1.2 pF fc VR=2 V, RL=50 Ω λ=850 nm, -3 dB 3 - - 1.9 - - 1.5 - - GHz 1 GaAs PIN photodiode ■ Spectral response ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.6 (Typ. Ta=25 ˚C) 100 pA 0.5 10 pA DARK CURRENT PHOTO SENSITIVITY (A/W) G8522 series 0.4 0.3 0.2 1 pA 100 fA 0.1 0 400 600 800 1000 10 fA 0.01 0.1 1 10 REVERSE VOLTAGE (V) WAVELENGTH (nm) KGPDB0044EA ■ Dimensional outline (unit: mm) G8522-03 PHOTOSENSITIVE SURFACE 1 pF 0.45 LEAD 2.7 ± 0.2 4.6 ± 0.1 WINDOW 3.0 ± 0.2 3.6 ± 0.2 5.4 ± 0.2 (Typ. Ta=25 ˚C) 13 MIN. TERMINAL CAPACITANCE KGPDB0045EA 0.4 MAX. ■ Terminal capacitance vs. reverse voltage 10 pF 100 G8522-02 2.54 ± 0.2 G8522-01 100 fF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) 1.2 MAX. KGPDB0046EA CASE KGPDA0015EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KGPD1008E01 Jan. 2002 DN