Advance Technical Information IXTT34N65X2HV X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 34A 96m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT) G S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 34 A IDM TC = 25C, Pulse Width Limited by TJM 68 A D (Tab) IA TC = 25C 17 A EAS TC = 25C 1 J dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 540 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight 4 g G = Gate S = Source D = Drain Tab = Drain Features High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V 100 nA TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 150 A 96 m DS100701(01/16) IXTT34N65X2HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 33 S 0.90 3000 pF 2180 pF 1.7 pF 125 490 pF pF 30 ns 48 ns 68 ns 30 ns 54 nC 15 nC 20 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 34 A Repetitive, pulse Width Limited by TJM 136 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 17A, -di/dt = 100A/μs 390 4.2 21.8 VR = 100V ns μC A Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTT34N65X2HV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 35 90 VGS = 10V 8V 30 VGS = 10V 9V 80 70 7V 8V 25 I D - Amperes I D - Amperes 60 20 15 6V 7V 50 40 30 10 6V 20 5 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 35 3.8 VGS = 10V 8V 7V 30 20 VDS - Volts VGS = 10V 3.4 I D - Amperes R DS(on) - Normalized 3.0 25 6V 20 15 10 2.6 I D = 34A 2.2 1.8 I D = 17A 1.4 1.0 5V 5 0.6 4V 0.2 0 0 1 2 3 4 5 6 7 8 -50 9 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 3.8 150 1.3 VGS = 10V 3.4 BVDSS / VGS(th) - Normalized 1.2 TJ = 125ºC 3.0 RDS(on) - Normalized -25 VDS - Volts 2.6 2.2 1.8 TJ = 25ºC 1.4 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.6 0 10 20 30 40 50 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTT34N65X2HV Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 40 60 35 50 25 I D - Amperes I D - Amperes 30 20 15 TJ = 125ºC 25ºC - 40ºC 40 30 20 10 10 5 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 60 100 TJ = - 40ºC 50 80 40 I S - Amperes g f s - Siemens 25ºC 125ºC 30 60 40 TJ = 125ºC 20 20 10 0 TJ = 25ºC 0 0 10 20 30 40 50 0.4 60 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 VDS = 325V Capacitance - PicoFarads I D = 17A 8 VGS - Volts I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTT34N65X2HV Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 30 25µs 25 100µs I D - Amperes E OSS - MicroJoules RDS(on) Limit 10 20 15 1 10 TJ = 150ºC 5 1ms TC = 25ºC Single Pulse 0.1 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_34N65X2 (X5-S602) 1-06-16 IXTT34N65X2HV TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.