ON MBD101G Schottky barrier diode Datasheet

MBD101G, MMBD101LT1G
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
Features
•
•
•
•
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Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance − Less Than 1.0 pF
High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
These Devices are Pb−Free and are RoHS Compliant
SILICON SCHOTTKY
BARRIER DIODES
MARKING
DIAGRAMS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
V
Forward Power Dissipation
TA = 25°C
MBD101
MMBD101LT1
PF
Derate above 25°C
TO−92 2−Lead
CASE 182
STYLE 1
1
2
MBD101
MMBD101LT1
280
225
mW
2.2
1.8
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MBD
101
AYW G
G
2
CATHODE
3
1
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
4M M G
G
2
3
CATHODE
1
ANODE
1
(Pin 2 Not Connected)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
7.0
10
−
V
Diode Capacitance
(VR = 0, f = 1.0 MHz,
Note 1, page 2)
CD
−
0.88
1.0
pF
Forward Voltage
(IF = 10 mA)
VF
−
0.5
0.6
V
Reverse Leakage
(VR = 3.0 V)
IR
−
0.02
0.25
mA
Reverse Breakdown Voltage
(IR = 10 mA)
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
A
= Assembly Location
Y
= Year
W = Work Week
4M = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MBD101G
TO−92
(Pb−Free)
5000 Units / Box
MMBD101LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 4
1
Publication Order Number:
MBD101/D
MBD101G, MMBD101LT1G
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
100
0.5
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( mA)
1.0
0.7
VR = 3.0 V
0.2
0.1
0.07
0.05
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
0.02
0.01
0.1
30
40
50
60
70
80
90 100 110
TA, AMBIENT TEMPERATURE (°C)
120
130
0.3
0.4
Figure 2. Forward Voltage
Figure 1. Reverse Leakage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
9.0
0.9
NF, NOISE FIGURE (dB)
C , CAPACITANCE (pF)
D
0.5
0.6
0.7
VF, FORWARD VOLTAGE (VOLTS)
0.8
0.7
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0.6
0
1.0
2.0
3.0
1.0
4.0
0.1
0.2
0.5
1.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
NOTES ON TESTING AND SPECIFICATIONS
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
5.0
Note 1 — CD is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
Figure 5. Noise Figure Test Circuit
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2
10
MBD101G, MMBD101LT1G
PACKAGE DIMENSIONS
TO−92 TWO LEAD
TO−226AC
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
D
ÉÉ
ÉÉ
L
P
J
K
SECTION X−X
X X
D
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
--0.250
--0.080
0.105
--0.050
0.115
--0.135
---
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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3
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
--6.35
--2.03
2.66
--1.27
2.93
--3.43
---
MBD101G, MMBD101LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBD101/D
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