MBD101G, MMBD101LT1G Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • • • • www.onsemi.com Low Noise Figure − 6.0 dB Typ @ 1.0 GHz Very Low Capacitance − Less Than 1.0 pF High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA These Devices are Pb−Free and are RoHS Compliant SILICON SCHOTTKY BARRIER DIODES MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 7.0 V Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 PF Derate above 25°C TO−92 2−Lead CASE 182 STYLE 1 1 2 MBD101 MMBD101LT1 280 225 mW 2.2 1.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MBD 101 AYW G G 2 CATHODE 3 1 1 ANODE SOT−23 (TO−236) CASE 318 STYLE 8 4M M G G 2 3 CATHODE 1 ANODE 1 (Pin 2 Not Connected) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 7.0 10 − V Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1, page 2) CD − 0.88 1.0 pF Forward Voltage (IF = 10 mA) VF − 0.5 0.6 V Reverse Leakage (VR = 3.0 V) IR − 0.02 0.25 mA Reverse Breakdown Voltage (IR = 10 mA) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. A = Assembly Location Y = Year W = Work Week 4M = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MBD101G TO−92 (Pb−Free) 5000 Units / Box MMBD101LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 4 1 Publication Order Number: MBD101/D MBD101G, MMBD101LT1G TYPICAL CHARACTERISTICS (TA = 25°C unless noted) 100 0.5 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( mA) 1.0 0.7 VR = 3.0 V 0.2 0.1 0.07 0.05 TA = 85°C 10 TA = -40°C 1.0 TA = 25°C 0.02 0.01 0.1 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130 0.3 0.4 Figure 2. Forward Voltage Figure 1. Reverse Leakage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5) 9.0 0.9 NF, NOISE FIGURE (dB) C , CAPACITANCE (pF) D 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS) 0.8 0.7 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 3.0 1.0 4.0 0.1 0.2 0.5 1.0 2.0 VR, REVERSE VOLTAGE (VOLTS) PLO, LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure NOTES ON TESTING AND SPECIFICATIONS LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz 5.0 Note 1 — CD is measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 — LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). Figure 5. Noise Figure Test Circuit www.onsemi.com 2 10 MBD101G, MMBD101LT1G PACKAGE DIMENSIONS TO−92 TWO LEAD TO−226AC CASE 182−06 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE D ÉÉ ÉÉ L P J K SECTION X−X X X D G H V 1 2 C DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- STYLE 1: PIN 1. ANODE 2. CATHODE N N www.onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- MBD101G, MMBD101LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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