BTA08 S/A BTB08 S/A SENSITIVE GATE TRIACS .. . TO220AB (Plastic) FEATURES VERY LOW IGT = 10mA max LOW IH = 25mA max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB08 S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2 t dI/dt Tstg Tj Tl Symbol VDRM VRRM 2014-6-9 Parameter Value Unit 8 A tp = 8.3 ms 84 A tp = 10 ms 80 I2 t value tp = 10 ms 32 A2s Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 RMS on-state current (360° conduction angle) BTA Tc = 75°C BTB Tc = 80°C Non repetitive surge peak on-state current ( Tj initial = 25°C ) Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter BTA / BTB08- Unit 400 S/A 600 S/A 700 S/A 400 600 700 Repetitive peak off-state voltage Tj = 110°C 1 V www.kersemi.com BTA08 S/A / BTB08 S/A THERMAL RESISTANCES Symbol Parameter Rth (j-a) Value Unit 60 °C/W BTA 4.4 °C/W BTB 3.2 BTA 3.3 BTB 2.4 Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) °C/W GATE CHARACTERISTICS (maximum values) PGM = 10W (tp = 20 µs) PG (AV) = 1W IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33Ω (DC) RL=33Ω Quadrant Tj=25°C Suffix S A Unit I-II-III MAX 10 10 mA IV MAX 10 25 Tj=25°C I-II-III-IV MAX 1.5 V VGT VD=12V VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 40mA dIG/dt = 0.5A/µs Tj=25°C I-II-III-IV TYP 2 µs IL IG= 1.2 IGT Tj=25°C I-III-IV TYP II 20 20 40 40 25 25 mA IH * IT= 100mA gate open Tj=25°C MAX VTM * ITM = 11A tp= 380µs Tj=25°C MAX 1.75 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=110°C MAX 0.75 Linear slope up to VD=67%VDRM gate open Tj=110°C MIN 10 10 V/µs (dI/dt)c= 3.5A/ms Tj=110°C TYP 5 5 V/µs dV/dt * (dV/dt)c * Rated Rated mA * For either polarity of electrode A2 voltage with reference to electrode A1. 2014-6-9 1 www.kersemi.com BTA08 S/A / BTB08 S/A ORDERING INFORMATION Package BTA (Insulated) BTB (Uninsulated) IT(RMS) VDRM / VRRM Sensitivity Specification A V S A 8 400 X X 600 X X 700 X X 400 X X 600 X X 700 X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. 2014-6-9 3 www.kersemi.com BTA08 S/A / BTB08 S/A Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.5 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2 t. Fig.9 : On-state characteristics (maximum values). 2014-6-9 4 www.kersemi.com