IRFH5300PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.4 m 50 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) : : h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (≤ 1.4mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Industry-Standard Pinout Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type IRFH5300TRPBF IRFH5300TR2PBF Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 30 ± 20 40 32 100 100 h h 400 3.6 250 0.029 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5300PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) Output Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 190 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 1.1 1.7 1.8 -6.2 ––– ––– ––– ––– ––– 120 50 12 6.5 16 16 23 30 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 1.4 VGS = 10V, ID = 50A mΩ VGS = 4.5V, ID = 50A 2.1 2.35 V VDS = VGS, ID = 150μA ––– mV/°C 5.0 VDS = 24V, VGS = 0V μA VDS = 24V, VGS = 0V, TJ = 125°C 150 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 50A ––– nC VGS = 10V, VDS = 15V, ID = 50A 75 VDS = 15V ––– ––– VGS = 4.5V nC ––– ID = 50A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.3 26 30 31 13 7200 1360 590 ––– ––– ––– ––– ––– ––– ––– ––– Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ΔVGS(th) IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 15V, VGS = 4.5V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Max. 420 50 Typ. ––– ––– d Units mJ A Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr ton Reverse Recovery Charge Forward Turn-On Time Min. Typ. ––– ––– Max. Units 100 h ––– ––– 400 ––– ––– ––– 34 1.0 51 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 15V di/dt = 200A/μs G S e ––– 68 100 nC Time is dominated by parasitic Inductance e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g www.irf.com © 2015 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. 0.5 15 35 21 Units °C/W May 19, 2015 IRFH5300PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 10 2.7V BOTTOM 100 2.7V ≤ 60μs PULSE WIDTH Tj = 25°C ≤ 60μs PULSE WIDTH Tj = 150°C 1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 TJ = 150°C 10 TJ = 25°C 1 0.1 VDS = 15V ≤ 60μs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 ID = 50A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 100000 20 40 60 80 100 120 140 160 Fig 4. Normalized On-Resistance Vs. Temperature 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 0 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Ciss Coss 1000 Crss ID= 50A 12 VDS= 24V VDS= 15V 10 8 6 4 2 0 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V www.irf.com © 2015 International Rectifier 0 40 80 120 160 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH5300PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 3.0 350 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE 300 250 200 150 100 50 25 50 75 100 125 150 ID = 1.0A ID = 1.0mA ID = 500μA ID = 150μA 2.5 2.0 1.5 1.0 0 0.5 175 -75 -50 -25 TC, Case Temperature (°C) 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature 1 Thermal Response ( ZthJC ) ID, Drain Current (A) 100μsec 1msec 100 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 ( Ω) RDS (on), Drain-to -Source On Resistance m IRFH5300PbF EAS, Single Pulse Avalanche Energy (mJ) 6 ID = 50A 5 4 3 2 TJ = 125°C 1 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 2000 I D 15A 21A BOTTOM 50A TOP 1600 1200 800 400 0 20 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 Starting TJ , Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp 150 www.irf.com © 2015 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback May 19, 2015 IRFH5300PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH5300PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5300PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimension des ign to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between s uccess ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5300PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.337mH, RG = 25Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at T J of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Revision History Date 7/7/2014 4/28/2015 5/19/2015 Comment • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated package outline on page 7. • Updated data sheet based on corporate template. • Updated package outline for “option B” and added package outline for “option G” on page 7 • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015