HI-SINCERITY Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 1/6 MICROELECTRONICS CORP. H07N65 Series H07N65 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 1 2 3 H07N65 Series Symbol: Features D G S • Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol VDS Parameter Drain-Source Voltage Value Units 650 V ID Drain to Current (Continuous) 7 A IDM Drain to Current (Pulsed) 28 A VGS Gate-to-Source Voltage (Continue) ±30 V Total Power Dissipation (TC=25 C) H07N65E (TO-220AB) H07N65F (TO-220FP) 120 48 W W Derate above 25OC H07N65E (TO-220AB) H07N65F (TO-220FP) 1.18 0.38 W/°C W/oC o PD Tj Tstg Operating Temperature Range Storage Temperature Range -55 to 150 O -55 to 150 O C C O EAS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 C (VDD=50V, VGS=10V, IL=7A, L=10mH, RG=25Ω) 530 mJ TL Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 260 °C Note: 1. VDD=50V, ID=7A 2. Pulse Width and frequency is limited by Tj(max) and thermal response H07N65E, H07N65F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 2/6 MICROELECTRONICS CORP. Thermal Characteristics Symbol Parameter Value RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Units TO-220AB 1.02 TO-220FP 3.3 O 62 C/W ELectrical Characteristics (TJ=25OC, unless otherwise specified) Symbol Min. Typ. Max. Unit 650 - - V - - 1 uA Drain-Source Leakage Current (VDS=650V, VGS=0V, Tj=125 C) - - 50 uA IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 3 4 V RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=3.5A)* - 1 1.2 Ω gFS Forward Transconductance (VDS=15V, ID=3.5A)* 2 - - S Ciss Input Capacitance - 1095 - Coss Output Capacitance - 95 - Crss Reverse Transfer Capacitance - 3 - td(on) Turn-on Delay Time - 39 - - 29 - - 249 - Fall Time - 37 - Qg Total Gate Charge - 27 38 Qgs Gate-Source Charge - 5.1 - Qgd Gate-Drain Charge - 8.5 - Min. Typ. Max. Units - - 1.4 V - 365 - ns - 3.5 - ns V(BR)DSS IDSS tr td(off) tf Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=650V, VGS=0V) O Rise Time Turn-off Delay Time VGS=0V, VDS=25V, f=1MHz (VDD=300V, ID=7A, RG=25Ω, VGS=10V)* (VDS=480V, ID=7A, VGS=10V)* pF ns nC *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Characteristic VSD Forward On Voltage(1) trr Reverse Recovery Time Qrr Reverse Recovery Charge o IS=7.0A, VGS=0V, TJ=25 C IS=7A, VGS=0V, dIS/dt=100A/us **: Negligible, Dominated by circuit inductance H07N65E, H07N65F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 3/6 Characteristics Curve Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs Source Current and Temperature Figure 4. Body Diode Forward Voltage Variation vs Source Current and Temperature Figure 6. Gate Charge Characteristics H07N65E, H07N65F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 4/6 Characteristics Curve Figure 7. Breakdown Voltage Variation vs Temperature H07N65E, H07N65F Figure 8. Onresistance Variation vs Temperature HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 5/6 TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B E C D H K M I 3 G N 2 O P J L Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Note: Green label is used for pb-free packing Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 E O C D α3 α2 α5 G I J N Pin Style: 1.Gate 2.Drain 3.Source 3 2 F K 1 M Note: Green label is used for pb-free packing L Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C D E F G I J K L M N O α1/2/4/5 α3 Min. 6.48 4.40 2.34 0.45 9.80 3.10 2.70 0.60 2.34 12.48 15.67 0.90 2.00 - Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 o *5 o *27 *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H07N65E, H07N65F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 6/6 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245 C ±5 C 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products H07N65E, H07N65F o o o o HSMC Product Specification