HSMC H07N65 N-channel power field effect transistor Datasheet

HI-SINCERITY
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 1/6
MICROELECTRONICS CORP.
H07N65 Series
H07N65 Series Pin Assignment
Tab
N-Channel Power Field Effect Transistor
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
1
2
3
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
H07N65 Series
Symbol:
Features
D
G
S
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Value
Units
650
V
ID
Drain to Current (Continuous)
7
A
IDM
Drain to Current (Pulsed)
28
A
VGS
Gate-to-Source Voltage (Continue)
±30
V
Total Power Dissipation (TC=25 C)
H07N65E (TO-220AB)
H07N65F (TO-220FP)
120
48
W
W
Derate above 25OC
H07N65E (TO-220AB)
H07N65F (TO-220FP)
1.18
0.38
W/°C
W/oC
o
PD
Tj
Tstg
Operating Temperature Range
Storage Temperature Range
-55 to 150
O
-55 to 150
O
C
C
O
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 C
(VDD=50V, VGS=10V, IL=7A, L=10mH, RG=25Ω)
530
mJ
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
260
°C
Note: 1. VDD=50V, ID=7A
2. Pulse Width and frequency is limited by Tj(max) and thermal response
H07N65E, H07N65F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 2/6
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
Parameter
Value
RθJC
Thermal Resistance Junction to Case Max.
RθJA
Thermal Resistance Junction to Ambient Max.
Units
TO-220AB
1.02
TO-220FP
3.3
O
62
C/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
650
-
-
V
-
-
1
uA
Drain-Source Leakage Current (VDS=650V, VGS=0V, Tj=125 C)
-
-
50
uA
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
-
-
100
nA
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
-
-
-100
nA
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
2
3
4
V
RDS(on)
Static Drain-Source On-Resistance (VGS=10V, ID=3.5A)*
-
1
1.2
Ω
gFS
Forward Transconductance (VDS=15V, ID=3.5A)*
2
-
-
S
Ciss
Input Capacitance
-
1095
-
Coss
Output Capacitance
-
95
-
Crss
Reverse Transfer Capacitance
-
3
-
td(on)
Turn-on Delay Time
-
39
-
-
29
-
-
249
-
Fall Time
-
37
-
Qg
Total Gate Charge
-
27
38
Qgs
Gate-Source Charge
-
5.1
-
Qgd
Gate-Drain Charge
-
8.5
-
Min.
Typ.
Max.
Units
-
-
1.4
V
-
365
-
ns
-
3.5
-
ns
V(BR)DSS
IDSS
tr
td(off)
tf
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=650V, VGS=0V)
O
Rise Time
Turn-off Delay Time
VGS=0V, VDS=25V, f=1MHz
(VDD=300V, ID=7A, RG=25Ω,
VGS=10V)*
(VDS=480V, ID=7A, VGS=10V)*
pF
ns
nC
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
VSD
Forward On Voltage(1)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
o
IS=7.0A, VGS=0V, TJ=25 C
IS=7A, VGS=0V, dIS/dt=100A/us
**: Negligible, Dominated by circuit inductance
H07N65E, H07N65F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 3/6
Characteristics Curve
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs Source Current and Temperature
Figure 4. Body Diode Forward Voltage
Variation vs Source Current and Temperature
Figure 6. Gate Charge Characteristics
H07N65E, H07N65F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 4/6
Characteristics Curve
Figure 7. Breakdown Voltage Variation
vs Temperature
H07N65E, H07N65F
Figure 8. Onresistance Variation
vs Temperature
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 5/6
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Marking:
A
F
B
E
C
D
H
K
M
I
3
G
N
2
O
P
J
L
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
Tab
Note: Green label is used for pb-free packing
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α4
α1
E O
C
D
α3
α2
α5
G
I
J
N
Pin Style: 1.Gate 2.Drain 3.Source
3
2
F
K
1
M
Note: Green label is used for pb-free packing
L
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
o
*5
o
*27
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-2521-2056 Fax: 886-2-2563-2712
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-598-3621~5 Fax: 886-3-598-2931
H07N65E, H07N65F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 6/6
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
Pb devices.
245 C ±5 C
10sec ±1sec
Pb-Free devices.
260 C ±5 C
10sec ±1sec
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
60~150 sec
240 C +0/-5 C
Peak Temperature (TP)
o
3. Flow (wave) soldering (solder dipping)
Products
H07N65E, H07N65F
o
o
o
o
HSMC Product Specification
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