Foshan MBR20100CT Schottky barrier diode in a to-220 plastic package Datasheet

MBR20100CT
Rev.F Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-220 塑封封装 肖特基二极管。
Schottky Barrier Diode in a TO-220 Plastic Package.
特征
/ Features
损耗低,效率高。
Low power loss, high efficiency.
用途
/
Applications
用于高频、低压、大电流整流二极管,续流二极管,保护二极管。
For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications.
内部等效电路
引脚排列
1
2
/ Equivalent Circuit
/ Pinning
3
PIN1:Anode
放大及印章代码
PIN 2:Cathode
PIN 3:Anode
/ hFE Classifications & Marking
见印章说明。See Marking Instructions
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MBR20100CT
Rev.F Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Peak Repetitive Reverse Voltage
VRRM
100
V
Peak Repetitive Forward Current
IFRM
20
A
IF(AV)
10
A
IF(AV)(total)
20
A
Non-Repetitive Peak Forward Surge Current
IFSM
150
A
Repetitive Peak Reverse Surge Current
IRRM
0.5
A
Thermal Resistance Junction to Case
RθJc
2.0
℃/W
Junction Temperature Range
Tj
150
℃
Storage Temperature Range
Tstg
-55~150
℃
Average Rectified Forward Current
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Forward Voltage
Instantaneous Reverse Current
Voltage Rate of Change
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符号
Symbol
VF
IR
dv/dt
测试条件
Test Conditions
最小值 典型值 最大值
Min
Typ
Max
单位
Unit
IF =10A(TC=25℃)
0.8
V
IF =10A(TC=125℃)
0.7
V
IF =20A(TC=25℃)
0.95
V
IF =20A(TC=125℃)
0.85
V
VR=100V(TC=25℃)
0.15
mA
VR=100V(TC=125℃)
150
mA
10000
V/μs
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