Zetex FZT658 Npn silicon planar high voltage transistor Datasheet

SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT658
TYPICAL CHARACTERISTICS
1.4
IC/IB=10
IC/IB=20
IC/IB=50
Tamb=25°C
1.4
1.2
1.0
0.6
0.2
COMPLEMENTARY TYPE PARTMARKING DETAIL -
1.2
1.0
10
0
20
VCE=10V
0.001
0.01
0.1
1
IC - Collector Current (Amps)
200
0.8
0.6
1.6
- (Volts)
1.2
V
1.4
0.6
0.1
20
0.6
0
0.001
0.01
0.1
1
hFE v IC
VBE(sat) v IC
10 20
1
VCE=10V
0.1
1.0
0.8
DC
1s
100ms
10ms
1ms
100µs
0.01
0.4
0
0.001
0.001
0.01
0.1
1
SYMBOL
10 20
IC - Collector Current (Amps)
1
10
100
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
UNIT
V
Collector-Base Voltage
VCBO
400
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
1
A
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
0.5
A
2
W
-55 to +150
°C
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Breakdown Voltage
V(BR)CBO
400
1000
MAX.
V
IC=100µA
V(BR)CEO
400
V
IC=10mA*
V(BR)EBO
5
V
IE=100µA
VCB=320V
Collector Cut-Off Current
ICBO
100
nA
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.25
0.5
V
V
V
IC=20mA, IB=1mA*
IC=50mA, IB=5mA*
IC=100mA, IB=10mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
50
50
40
Transition Frequency
fT
50
Output Capacitance
Cobo
Switching Times
ton
toff
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
MHz
10
130
3300
3 - 215
IC=10mA, VCE=20V
f=20MHz
pF
VCB=20V, f=1MHz
ns
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 216
VALUE
Collector-Emitter Voltage
0.2
IC - Collector Current (Amps)
0.2
PARAMETER
0.4
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
0.8
10 20
1
IC/IB=10
1.0
V
100
0.4
0.01
10
1.2
- (Volts)
1.0
0.2
0
0.001
1.4
- Typical gain
1.2
-55°C
+25°C
+100°C
+175°C
1.6
300
h
- Normalised Gain
h
1.4
FZT758
FZT658
ABSOLUTE MAXIMUM RATINGS.
0.4
VCE(sat) v IC
+100°C
+25°C
-55°C
C
0.8
VCE(sat) v IC
1.6
E
0.2
0.01
0.1
1
IC - Collector Current (Amps)
C
IC/IB=10
0.6
0.4
V
V
0.8
0
0.001
-55°C
+25°C
+100°C
+175°C
1.6
- (Volts)
- (Volts)
1.6
FZT658
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt VCEO
* Low saturation voltage
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT658
TYPICAL CHARACTERISTICS
1.4
IC/IB=10
IC/IB=20
IC/IB=50
Tamb=25°C
1.4
1.2
1.0
0.6
0.2
COMPLEMENTARY TYPE PARTMARKING DETAIL -
1.2
1.0
10
0
20
VCE=10V
0.001
0.01
0.1
1
IC - Collector Current (Amps)
200
0.8
0.6
1.6
- (Volts)
1.2
V
1.4
0.6
0.1
20
0.6
0
0.001
0.01
0.1
1
hFE v IC
VBE(sat) v IC
10 20
1
VCE=10V
0.1
1.0
0.8
DC
1s
100ms
10ms
1ms
100µs
0.01
0.4
0
0.001
0.001
0.01
0.1
1
SYMBOL
10 20
IC - Collector Current (Amps)
1
10
100
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
UNIT
V
Collector-Base Voltage
VCBO
400
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
1
A
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
0.5
A
2
W
-55 to +150
°C
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Breakdown Voltage
V(BR)CBO
400
1000
MAX.
V
IC=100µA
V(BR)CEO
400
V
IC=10mA*
V(BR)EBO
5
V
IE=100µA
VCB=320V
Collector Cut-Off Current
ICBO
100
nA
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.25
0.5
V
V
V
IC=20mA, IB=1mA*
IC=50mA, IB=5mA*
IC=100mA, IB=10mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
50
50
40
Transition Frequency
fT
50
Output Capacitance
Cobo
Switching Times
ton
toff
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
MHz
10
130
3300
3 - 215
IC=10mA, VCE=20V
f=20MHz
pF
VCB=20V, f=1MHz
ns
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 216
VALUE
Collector-Emitter Voltage
0.2
IC - Collector Current (Amps)
0.2
PARAMETER
0.4
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
0.8
10 20
1
IC/IB=10
1.0
V
100
0.4
0.01
10
1.2
- (Volts)
1.0
0.2
0
0.001
1.4
- Typical gain
1.2
-55°C
+25°C
+100°C
+175°C
1.6
300
h
- Normalised Gain
h
1.4
FZT758
FZT658
ABSOLUTE MAXIMUM RATINGS.
0.4
VCE(sat) v IC
+100°C
+25°C
-55°C
C
0.8
VCE(sat) v IC
1.6
E
0.2
0.01
0.1
1
IC - Collector Current (Amps)
C
IC/IB=10
0.6
0.4
V
V
0.8
0
0.001
-55°C
+25°C
+100°C
+175°C
1.6
- (Volts)
- (Volts)
1.6
FZT658
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt VCEO
* Low saturation voltage
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