LIGITEK LA79B-1-H3G-PF Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA79B-1/H3G-PF
DATA SHEET
DOC. NO : QW0905-L A79B-1/H3G-PF
REV.
:
A
DATE
:
23 - Sep. - 2008
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/6
PART NO. LA79B-1/H3G-PF
Package Dimensions
4.0±0.5
4.4
10.7
ψ3.0x4
3.0
H
G
20.3
G
1.5
5.08
G
2.5
∅0.5
TYP
2.5± 0.5
2.54TYP
2.8± 0.5
+ -
4.7± 0.5
6.6±0.5
8.5± 0.5
LH2340-1/F181-PF
LG2340-1/F181-PF
3.0
5.0
1.5MAX
28.5MIN
□0.5
TYP
1.0MIN
2.54TYP
+
-
Note : 1.All dimension are in millimeter tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
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Page 2/6
PART NO. LA79B-1/H3G-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
H
G
Forward Current
IF
15
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
60
120
mA
Power Dissipation
PD
40
100
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Forward
Peak Spectral
voltage
wave halfwidth
length △λnm @ 20mA(V)
λPnm
@10mA(mcd)
Viewing
angle
2θ 1/2
(deg)
Min. Max. Min. Typ.
Lens
Red Diffused
Luminous
intensity
GaP
Red
697
90
1.7
2.6
1.8
3.0
80
GaP
Green Green Diffused 565
30
1.7
2.6
8.0
20
80
LA79B-1/H3G-PF
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page3/6
PART NO. LA79B-1/H3G-PF
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
700
800
900
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
1000
80
100
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Page 4/6
PART NO. LA79B-1/H3G-PF
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA79B-1/H3G-PF
Page 5/6
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350 °C Max
Soldering Time:3 Seconds Max(One time only)
Distance:2mm Min(From solder joint to case)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 120seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to case)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
100
200
120 Seconds Max
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
250
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LA79B-1/H3G-PF
Page 6/6
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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