DG2531/DG2532 Vishay Siliconix New Product 0.4-Ω Low-Voltage Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2531/DG2532 is a sub 1-Ω (0.4 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. • • • • • The DG2531/DG2532 has on-resistance matching (less than 0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG2531/DG2532 an ideal interface to low voltage DSP control signals. Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 0.4 Ω at 2.7 V - 69 dB OIRR at 2.7 V, 100 kHz MSOP-10 Package ESD Protection > 2000 V BENEFITS • Reduced Power Consumption The DG2531/DG2532 has fast switching speed (on/off time at 40 and 35 ns) with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is - 69 dB at 100 kHz. The DG2531/DG2532 is built on Vishay Siliconix’s high-density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG2531/DG2532 contains the additional benefit of 2000 V ESD protection. Packaged in space saving MSOP-10, the DG2531/DG2532 is a high performance, low rON switches for battery powered applications. • High Accuracy • Reduce Board Space • 1.6-V Logic Compatible • High Bandwidth APPLICATIONS • Cellular Phones • Speaker Headset Switching • Audio and Video Signal Routing • PCMCIA Cards • Battery Operated Systems • Relay Replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2531 MSOP-10 V+ 1 10 NO2 NO1 2 9 COM2 COM1 3 8 IN2 IN1 4 7 NC2 6 GND NC1 5 Top View TRUTH TABLE Logic NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON DG2532 MSOP-10 V+ 1 10 NC2 NC1 2 9 COM2 COM1 3 8 IN2 IN1 4 7 NO2 NO1 5 6 GND Document Number: 72742 S-60005–Rev. B, 16-Jan-06 Top View ORDERING INFORMATION Temp Range Package - 40 to 85 °C MSOP-10 Part Number DG2531DQ DG2532DQ www.vishay.com 1 DG2531/DG2532 Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Reference V+ to GND IN, COM, NC, NOa Continuous Current (NO, NC, COM) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (D Suffix) PESD per Method 3015.7 Limit - 0.3 to + 6 - 0.3 to (V+ + 0.3 V) ± 300 ± 500 - 65 to 150 >2 320 Unit V mA °C kV mW MSOP-10c Power Dissipation (Packages)b Note a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/°C above 70 °C. SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Limits - 40 to 85 °C Tempa Minb VNO, VNC, VCOM Full 0 rON Room Full 0.4 0.6 0.7 Room 0.12 0.2 Symbol Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd On-Resistance Match Between Channelsd Switch Off Leakage Current rON Flatness ΔrDS(on) INO(off) INC(off) ICOM(off) Channel-On Leakage Current V+ = 2.7 V, VCOM = 0.6 V/1.5 V INO, INC = 100 mA ICOM(on) Room V+ = 3.3 V, VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Ω 0.05 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 1.4 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full V Input Current www.vishay.com 2 IINL or IINH VIN = 0 or V+ Full 0.5 7 1 pF 1 µA Document Number: 72742 S-60005–Rev. B, 16-Jan-06 DG2531/DG2532 Vishay Siliconix New Product SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Limits - 40 to 85 °C Tempa Minb Typc Maxb Room Full 40 70 77 Room Full 35 65 72 Unit Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time QINJ Off-Isolationd OIRR Crosstalkd XTALK Channel-On Capacitanced Room td Charge Injectiond NO, NC Off Capacitanced VNO or VNC = 2.0 V, RL = 50 Ω, CL = 35 pF CNO(off) CNC(off) CNO(on) CNC(on) CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω RL = 50 Ω, CL = 5 pF, f = 100 kHz VIN = 0 or V+, f = 1 MHz 1 ns 4 Room 54 Room - 69 Room - 69 Room 143 pC dB pF Room 403 Power Supply Power Supply Range V+ Power Supply Current I+ 1.8 VIN = 0 or V+ Full 5.5 V 1.0 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72742 S-60005–Rev. B, 16-Jan-06 www.vishay.com 3 DG2531/DG2532 Vishay Siliconix New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.8 T = 25 °C IA = 100 mA 1.4 V+ = 3.0 V IS = 100 mA 0.7 r ON – On-Resistance (Ω) r ON – On-Resistance (Ω) 1.2 1.0 V+ = 1.5 V at 10 mA 0.8 V+ = 1.8 V 0.6 V+ = 2.0 V V+ = 3.0 V 0.4 V+ = 5.0 V 0.2 0.6 85 °C 0.5 25 °C 0.4 0.3 0.2 0.1 0.0 0.0 0.0 0 1 2 3 4 5 0.5 1.0 2.0 2.5 3.0 rON vs. Analog Voltage and Temperature (NC1) 100000 100 mA V+ = 3.0 V VIN = 0 V 10 mA 1000 100 V+ = 5 V 1 mA I+ – Supply Current (A) 10000 1.5 VCOM – Analog Voltage (V) VCOM – Analog Voltage (V) rON vs. VCOM and Supply Voltage I+ – Supply Current (nA) - 40 °C 100 μA 10 μA 1 μA 100 nA 10 nA 10 1 nA 10 100 Temperature (°C) Supply Current vs. Temperature 10 K 100 K 1M 10 M Supply Current vs. Input Switching Frequency 10000 300 V+ = 3.0 V 250 ICOM(on) ICOM(off) 100 INO(off), INC(off) 10 V+ = 3.0 V 200 ICOM(on) 150 Leakage Current (pA) 1000 Leakage Current (pA) 1K Input Switching Frequency (Hz) 100 INO(off), INC(off) 50 0 - 50 - 100 - 150 - 200 ICOM(off) - 250 1 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 4 100 - 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCOM – Analog Voltage (V) Leakage vs. Analog Voltage Document Number: 72742 S-60005–Rev. B, 16-Jan-06 DG2531/DG2532 Vishay Siliconix New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 80 10 tON V+ = 2 V Loss - 10 60 Loss, OIRR, X TALK (dB) t ON / t OFF ñ Switching Time (ns) 70 tOFF V+ = 2 V 50 40 tOFF V+ = 3 V 30 tON V+ = 3 V 20 XTA LK - 30 OIRR - 50 V+ = 3.0 V RL = 50 Ω - 70 10 0 - 60 - 40 - 20 0 20 40 60 80 - 90 100 1M 100 K 100 M 10 M Temperature (°C) 1G Frequency (Hz) Switching Time vs. Temperature Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 250 2.00 200 150 Q – Charge Injection (pC) VT – Switching Threshold (V) 1.75 1.50 1.25 1.00 0.75 0.50 V+ = 5 V V+ = 2.0 V 100 50 V+ = 3.0 V 0 - 50 - 100 - 150 - 200 - 250 0.25 - 300 - 350 0.00 0 1 2 3 4 5 V+ –Supply V oltage (V) Switching Threshold vs. Supply Voltage Document Number: 72742 S-60005–Rev. B, 16-Jan-06 6 0 1 2 3 4 5 VCOM – Analog Voltage (V) Charge Injection vs. Analog Voltage www.vishay.com 5 DG2531/DG2532 Vishay Siliconix New Product TEST CIRCUITS V+ Logic Input V+ NO or NC Switch Input tr < 5 ns tf < 5 ns 50 % VINL Switch Output COM VINH VOUT 0.9 x VOUT IN Logic Input RL 300 Ω GND Switch Output CL 35 pF 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ COM NO VNO VO VINH tr < 5 ns tf < 5 ns VINL NC VNC RL 300 Ω IN CL 35 pF GND VNC = VNO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ ΔVOUT VOUT Rgen V+ NC or NO COM VOUT + IN IN On Off On CL = 1 nF VIN = 0 - V+ Q = ΔVOUT x CL GND IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 72742 S-60005–Rev. B, 16-Jan-06 DG2531/DG2532 Vishay Siliconix New Product TEST CIRCUITS V+ 10 nF V+ NC or NO IN COM COM RL Analyzer 0 V, 2.4 V GND VCOM Off Isolation = 20 log V NO/ NC Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72742. Document Number: 72742 S-60005–Rev. B, 16-Jan-06 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1