NTMS4107N Power MOSFET 30 V, 18 A, Single N−Channel, SO−8 Features • • • • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capability Pb−Free Package is Available Applications http://onsemi.com V(BR)DSS ID MAX 3.4 mW @ 10 V 30 V • Notebook Computer Vcore Applications • Network Applications • DC−DC Converters RDS(on) TYP 18 A 4.7 mW @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS $20 V ID 15 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 11 t v10 s TA = 25°C 18 Steady State t v10 s Power Dissipation (Note 2) 8 2.5 ID TA = 85°C TA = 25°C Pulsed Drain Current MARKING DIAGRAM/ PIN ASSIGNMENT W TA = 25°C TA = 25°C Steady State 1.67 S tp = 10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 32 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 11 8.0 PD 0.93 W IDM 56 A TJ, Tstg −55 to 150 °C IS 3.0 A EAS 512 mJ TL 260 °C 1 SO−8 CASE 751 STYLE 12 Source Source Source Gate 1 8 4107N AYWWG G Continuous Drain Current (Note 2) PD G Drain Drain Drain Drain (Top View) 4107N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION THERMAL RESISTANCE RATINGS Rating Symbol Max Unit Device Package Shipping† Junction−to−Ambient − Steady State (Note 1) RqJA 75 °C/W NTMS4107NR2 SO−8 2500/Tape & Reel Junction−to−Ambient − t v 10 s (Note 1) RqJA 50 RqJA 135 SO−8 (Pb−Free) 2500/Tape & Reel Junction−to−Ambient − Steady State (Note 2) NTMS4107NR2G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.). © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMS4107N/D NTMS4107N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 21 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = $20 V VGS(TH) VGS = VDS, ID = 250 mA $100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.0 2.5 7.4 V mV/°C VGS = 4.5 V, ID = 14 A 4.7 5.5 VGS = 10 V, ID = 15 A 3.4 4.5 VDS = 15 V, ID = 18 A 25 S 6000 pF gFS mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 550 Total Gate Charge QG(TOT) 45 Threshold Gate Charge QG(TH) VGS = 0 V, f = 1.0 MHz, VDS = 15 V 1030 nC 6.5 VGS = 4.5 V, VDS = 15 V, ID = 18 A Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 19.3 RG 0.60 W td(ON) 9.0 ns Gate Resistance 16.3 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W tf 10 94 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 3.0 A 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 3.0 A QRR http://onsemi.com 2 V ns 20 21 48 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.1 nC NTMS4107N TYPICAL PERFORMANCE CURVES 28 3.2 V 24 TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 28 VGS = 4 V to 10 V 20 3.0 V 16 12 8 2.8 V 4 24 20 16 12 TJ = 125°C 8 TJ = 25°C 4 2.6 V 0 1 3 2 4 5 7 6 9 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4 3 1 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = −55°C 0 0.008 VGS = 10 V 0.007 0.006 0.005 TJ = 125°C 0.004 0.003 TJ = 25°C 0.002 TJ = −55°C 0.001 0 2 6 10 14 18 22 26 0.008 TJ = 25°C 0.007 0.006 VGS = 4.5 V 0.005 0.004 0.003 VGS = 10 V 0.002 0.001 0 2 6 14 18 22 26 Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Drain Current and Temperature 2 1000000 VGS = 0 V ID = 16 A VGS = 12 V 100000 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 10 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) TJ = 150°C 10000 1 0.5 0 −50 5 TJ = 125°C 1000 100 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMS4107N TYPICAL PERFORMANCE CURVES 10 7000 TJ = 25°C 6000 Ciss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 8000 5000 4000 3000 2000 Coss 1000 0 Crss 8 VGS 6 QT 4 QGS ID = 16 A TJ = 25°C 0 10 0 0 5 10 15 20 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 90 100 12 100 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V td(off) tf td(on) 10 tr VGS = 0 V TJ = 25°C 10 8 6 4 2 0 1 10 RG, GATE RESISTANCE (OHMS) 0 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.4 0.2 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (AMPS) t, TIME (ns) 20 60 70 80 30 40 50 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 1000 1 QGD 2 100 10 ms 100 ms 10 1 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1 NTMS4107N PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AG NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 1 0.25 (0.010) M Y M 4 K −Y− G C N X 45 _ DIM A B C D G H J K M N S SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NTMS4107N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. NTMS4107N/D