CA3045, CA3046 Data Sheet September 1998 File Number 341.4 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max) • Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz The transistors of the CA3045 and CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. • 5 General Purpose Monolithic Transistors Ordering Information Applications PART NUMBER (BRAND) TEMP. RANGE (oC) PKG. NO. PACKAGE CA3045F -55 to 125 14 Ld CERDIP F14.3 CA3046 -55 to 125 14 Ld PDIP E14.3 CA3046M (3046) -55 to 125 14 Ld SOIC M14.15 CA3046M96 (3046) -55 to 125 14 Ld SOIC Tape and Reel M14.15 • Operation From DC to 120MHz • Wide Operating Current Range • Full Military Temperature Range • Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range • Custom Designed Differential Amplifiers • Temperature Compensated Amplifiers • See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested Applications Pinout CA3045, (CERDIP) CA3046 (PDIP, SOIC) TOP VIEW 14 1 2 DIFFERENTIAL PAIR Q1 Q5 12 3 4 Q2 5 11 Q4 10 9 6 7 13 SUBSTRATE Q3 1 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CA3045, CA3046 Absolute Maximum Ratings Thermal Information Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage (VCIO, Note 1) . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A CERDIP Package. . . . . . . . . . . . . . . . . 150 75 SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Maximum Junction Temperature (Hermetic Packages). . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θJA is measured with the component mounted on an evaluation PC board in free air. TA = 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V Collector Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0 - 0.002 40 nA Collector Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0 - See Fig. 2 0.5 µA Forward Current Transfer Ratio (Static Beta) (Note 3) (Figure 3) hFE VCE = 3V IC = 10mA - 100 - - IC = 1mA 40 100 - - IC = 10µA - 54 - - VCE = 3V, IC = 1mA - 0.3 2 µA VCE = 3V IE = 1mA - 0.715 - V IE = 10mA - 0.800 - V Input Offset Current for Matched Pair Q1 and Q2. |IIO1 - IIO2| (Note 3) (Figure 4) Base-to-Emitter Voltage (Note 3) (Figure 5) VBE Magnitude of Input Offet Voltage for Differential Pair |VBE1 - VBE2| (Note 3) (Figures 5, 7) VCE = 3V, IC = 1mA - 0.45 5 mV Magnitude of Input Offset Voltage for Isolated Transistors |VBE3 - VBE4|, |VBE4 - VBE5|, |VBE5 - VBE3| (Note 3) (Figures 5, 7) VCE = 3V, IC = 1mA - 0.45 5 mV VCE = 3V, IC = 1mA - -1.9 - mV/oC Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) ∆V BE --------------∆T Collector-to-Emitter Saturation Voltage VCES IB = 1mA, IC = 10mA - 0.23 - V ∆V IO ---------------∆T VCE = 3V, IC = 1mA - 1.1 - µV/oC dB Temperature Coefficient: Magnitude of Input Offset Voltage (Figure 7) DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figure 9) NF f = 1kHz, VCE = 3V, IC = 100µA, Source Resistance = 1kΩ - 3.25 - Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure 11) hFE f = 1kHz, VCE = 3V, IC = 1mA - 110 - - Short Circuit Input Impedance (Figure 11) hIE f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - kΩ 2 CA3045, CA3046 TA = 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified (Continued) Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Open Circuit Output Impedance (Figure 11) hOE f = 1kHz, VCE = 3V, IC = 1mA - 15.6 - µS Open Circuit Reverse Voltage Transfer Ratio (Figure 11) hRE f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10-4 - - Forward Transfer Admittance (Figure 12) YFE f = 1kHz, VCE = 3V, IC = 1mA - 31 - j1.5 - - Input Admittance (Figure 13) YIE f = 1kHz, VCE = 3V, IC = 1mA - 0.3 + j0.04 - - Output Admittance (Figure 14) YOE f = 1kHz, VCE = 3V, IC = 1mA - 0.001 + j0.03 - - Reverse Transfer Admittance (Figure 15) YRE f = 1kHz, VCE = 3V, IC = 1mA - See Fig. 14 - - Admittance Characteristics Gain Bandwidth Product (Figure 16) 300 550 - MHz Emitter-to-Base Capacitance CEB fT VCE = 3V, IC = 3mA VEB = 3V, IE = 0 - 0.6 - pF Collector-to-Base Capacitance CCB VCB = 3V, IC = 0 - 0.58 - pF Collector-to-Substrate Capacitance CCI VCS = 3V, IC = 0 - 2.8 - pF NOTE: 3. Actual forcing current is via the emitter for this test. Typical Performance Curves 103 IE = 0 COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 102 10 VCB = 15V VCB = 10V VCB = 5V 1 10-1 10-2 10-3 10-4 102 VCE = 10V 10 VCE = 5V 1 10-1 10-2 10-3 0 25 50 75 TEMPERATURE (oC) 100 120 0 125 FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR 1.1 10 1.0 100 90 h FE2 ------------- OR ------------h FE1 80 h FE2 h FE1 0.9 70 60 50 0.01 0.8 0.1 1.0 10 EMITTER CURRENT (mA) FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR Q1 AND Q2 vs EMITTER CURRENT 3 INPUT OFFSET CURRENT (µA) hFE BETA RATIO 110 TA = 25oC 25 50 75 TEMPERATURE (oC) 100 125 FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR VCE = 3V STATIC FORWARD CURRENT TRANSFER RATIO (hFE) IB = 0 VCE = 3V TA = 25oC 1.0 0.1 0.01 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR MATCHED TRANSISTOR PAIR Q1Q2 vs COLLECTOR CURRENT 10 CA3045, CA3046 Typical Performance Curves VCE = 3V TA = 25oC VCE = 3V 0.7 3 VBE 2 0.6 1 0.5 INPUT OFFSET VOLTAGE 0 0.4 0.01 0.1 1.0 BASE-TO-EMITTER VOLTAGE (V) 1.0 INPUT OFFSET VOLTAGE (mV) BASE-TO-EMITTER VOLTAGE (V) 0.8 (Continued) 0.9 0.8 0.7 IE = 3mA 0.6 IE = 1mA IE = 0.5mA 0.5 0.4 -75 10 -50 -25 EMITTER CURRENT (mA) FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT 4.00 125 20 IE = 10mA VCE = 3V RS = 500Ω TA = 25oC 3.00 f = 0.1kHz NOISE FIGURE (dB) INPUT OFFSET VOLTAGE (mV) 100 FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC vs TEMPERATURE FOR EACH TRANSISTOR VCE = 3V 2.00 0.75 IE = 1mA 0.50 IE = 0.1mA 0.25 -75 -50 -25 0 25 50 75 TEMPERATURE (oC) 100 125 FIGURE7. TYPICALINPUTOFFSETVOLTAGECHARACTERISTICS FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs TEMPERATURE f = 1kHz 10 f = 10kHz 5 0.1 COLLECTOR CURRENT (mA) 1.0 FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT 30 VCE = 3V RS = 1000Ω TA = 25oC 25 NOISE FIGURE (dB) 20 15 0 0.01 0 NOISE FIGURE (dB) 0 25 50 75 TEMPERATURE (oC) 15 f = 0.1kHz f = 1kHz 10 f = 10kHz 5 VCE = 3V RS = 10000Ω TA = 25oC 20 f = 0.1kHz 15 f = 1kHz 10 f = 10kHz 5 0 0 0.01 0.1 COLLECTOR CURRENT (mA) 1 FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT 4 0.01 0.1 COLLECTOR CURRENT (mA) 1 FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT CA3045, CA3046 Typical Performance Curves VCE = 3V f = 1kHz TA = 25oC hFE = 110 hIE = 3.5kΩ hRE = 1.88 x 10-4 hOE = 15.6µS hIE 10 hRE hOE AT 1mA hFE 1.0 hRE hIE 0.1 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FORWARD TRANSFER CONDUCTANCE (gFE) OR SUSCEPTANCE (bFE) (mS) NORMALIZED h PARAMETERS 100 (Continued) COMMON EMITTER CIRCUIT, BASE INPUT 30 10 0 -20 0.1 6 4 3 bIE 2 1 gIE 10 FREQUENCY (MHz) 100 REVERSE TRANSFER CONDUCTANCE (gRE) OR SUSCEPTANCE (bRE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz bRE -0.5 5 4 bOE 3 2 1 1 10 100 FREQUENCY (MHz) FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY 0 100 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 0 0.1 -1.0 -1.5 FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY GAIN BANDWIDTH PRODUCT (MHz) 1 10 FREQUENCY (MHz) gOE 0 0.1 1 FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs FREQUENCY OUTPUT CONDUCTANCE (gOE) OR SUSCEPTANCE (bOE) (mS) INPUT CONDUCTANCE (gIE) OR SUSCEPTANCE (bIE) (mS) 5 bFE -10 6 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gFE 20 10 FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO vs COLLECTOR CURRENT TA = 25oC, VCE = 3V, IC = 1mA 40 VCE = 3V TA = 25oC 1000 900 800 700 600 500 400 300 200 100 -2.0 1 10 FREQUENCY (MHz) 100 FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs FREQUENCY 5 0 1 2 3 4 5 6 7 8 9 10 11 COLLECTOR CURRENT (mA) 12 13 14 FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT CA3045, CA3046 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 6 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029