PD - 96324
AUTOMOTIVE GRADE
AUIRFS4310
AUIRFSL4310
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
100V
RDS(on) typ.
max.
G
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
7.0mΩ
ID (Silicon Limited)
130A c
ID (Package Limited)
75A
S
D
G
S
D
G
D2Pak
AUIRFS4310
Absolute Maximum Ratings
5.6mΩ
TO-262
AUIRFSL4310
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dV/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
d
e
d
Units
c
c
130
92
75
550
300
2.0
± 20
980
See Fig. 14, 15, 22a, 22b,
f
14
-55 to + 175
300 (1.6mm from case)
10lb in (1.1N m)
x
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
x
Thermal Resistance
Parameter
RθJC
RθJA
k
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.50
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRFS/SL4310
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– –––
––– 0.064 –––
–––
5.6
7.0
2.0
–––
4.0
160 ––– –––
–––
1.4
–––
––– –––
20
––– ––– 250
––– ––– 200
––– ––– -200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
S VDS = 50V, ID = 75A
Ω f = 1MHz, open drain
VDS = 100V, VGS = 0V
µA
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 170
–––
46
–––
62
–––
26
––– 110
–––
68
–––
78
––– 7670
––– 540
––– 280
––– 650
––– 720.1
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
d
g
nC
ns
pF
Conditions
ID = 75A
VDS = 80V
VGS = 10V
VDD = 65V
ID = 75A
RG = 2.6Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
VGS = 0V, VDS = 0V to 80V
g
g
i, See Fig.11
h, See Fig. 5
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
di
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.35mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
–––
–––
––– 130
–––
c
550
Conditions
MOSFET symbol
A
D
showing the
integral reverse
G
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
VR = 85V,
–––
45
68
ns
TJ = 125°C
IF = 75A
–––
55
83
di/dt = 100A/µs
TJ = 25°C
–––
82
120
nC
T
=
125°C
––– 120 180
J
–––
3.3
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
www.irf.com
AUIRFS/SL4310
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments:
This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
TO-262
2
D PAK
N/A
MSL1
Class M4(425V)
(per AEC-Q101-002)
ESD
Human Body Model
(per AEC-Q101-001)
Charged Device
Model
RoHS Compliant
Class H2(4000V)
Class C4 (1000V)
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRFS/SL4310
1000
1000
100
BOTTOM
10
BOTTOM
100
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current(Α)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
TJ = 175°C
10
TJ = 25°C
VDS = 50V
≤ 60µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
7.0
ID = 75A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
12000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
8000
6000
4000
2000
Coss
Crss
ID= 75A
VDS = 80V
VDS= 50V
VDS= 20V
16
12
8
4
0
0
1
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
≤ 60µs PULSE WIDTH
Tj = 175°C
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS/SL4310
10000
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000.0
100.0
10.0
TJ = 25°C
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100
100µsec
10
1
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
V(BR)DSS , Drain-to-Source Breakdown Voltage
140
Limited By Package
100
80
60
40
20
0
25
50
75
100
125
150
100
1000
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
120
10
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
ID, Drain Current (A)
10msec
DC
0.1
0.1
120
115
110
105
100
-60 -40 -20 0
175
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS, Single Pulse Avalanche Energy (mJ)
4.0
3.5
3.0
Energy (µJ)
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
2.5
2.0
1.5
1.0
0.5
0.0
2400
I D
12A
17A
BOTTOM 75A
TOP
2000
1600
1200
800
400
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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120
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
AUIRFS/SL4310
1
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ
Ri (°C/W) τi (sec)
0.1962 0.00117
0.2542
τ2
0.016569
Ci= τi/Ri
Ci i/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C
and Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
1000
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
6
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
www.irf.com
AUIRFS/SL4310
20
ID = 1.0A
ID = 1.0mA
ID = 250µA
4.0
16
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
5.0
3.0
12
8
IF = 30A
VR = 85V
2.0
4
1.0
TJ = 125°C
TJ = 25°C
0
-75 -50 -25
0
25
50
75
100 125 150 175
100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( °C )
dif / dt - (A / µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
20
500
16
400
QRR - (nC)
IRRM - (A)
Fig 16. Threshold Voltage Vs. Temperature
12
8
IF = 45A
VR = 85V
4
300
200
IF = 30A
VR = 85V
100
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
500
QRR - (nC)
400
300
200
100
IF = 45A
VR = 85V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
www.irf.com
Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS/SL4310
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD
Fig 22b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
8
Fig 24a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS/SL4310
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRFSL4310
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFS/SL4310
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS4310
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL4310
D2Pak (TO-263AB) Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
www.irf.com
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
11
AUIRFS/SL4310
Ordering Information
Base part number
AUIRFSL4310
AUIRFS4310
12
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFSL4310
AUIRFS4310
AUIRFS4310TRL
AUIRFS4310TRR
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AUIRFS/SL4310
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated
by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
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express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not
responsible or liable for any such statements.
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applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
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costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge
and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13