PD -91709
IRF7343
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
N - C H A N N EL M O S FE T
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
P -C H A N N E L M O S F E T
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
VDSS
N-Ch
P-Ch
55V
-55V
RDS(on) 0.050Ω 0.105Ω
T op V iew
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings
Max.
Parameter
V DS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ, TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
N-Channel
55
4.7
3.8
38
P-Channel
-55
-3.4
-2.7
-27
2.0
1.3
72
4.7
114
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Typ.
Max.
Units
–––
62.5
°C/W
1
2/24/99
IRF7343
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Min.
55
-55
—
—
—
—
—
—
1.0
-1.0
7.9
3.3
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
—
—
—
—
0.059 —
0.054 —
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
—
—
—
—
—
—
—
—
— 2.0
— -2.0
—
25
— -25
— ±100
24
36
26
38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
8.3 12
14
22
3.2 4.8
10
15
32
48
43
64
13
20
22
32
740 —
690 —
190 —
210 —
71
—
86
—
Min.
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
0.70
-0.80
60
54
120
85
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A
VGS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 4.5A
VDS = -10V, ID = -3.1A
VDS = 55V, VGS = 0V
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, T J = 55°C
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = ±20V
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
nC
P-Channel
ID = -3.1A, V DS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 16Ω
ns
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
RD = 16Ω
N-Channel
VGS = 0V, V DS = 25V, ƒ = 1.0MHz
pF
P-Channel
VGS = 0V, V DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Max. Units
Conditions
2.0
-2.0
A
38
-27
1.2
TJ = 25°C, IS = 2.0A, VGS = 0V
V
-1.2
TJ = 25°C, IS = -2.0A, VGS = 0V
90
N-Channel
ns
80
TJ = 25°C, I F =2.0A, di/dt = 100A/µs
170 nC
P-Channel
TJ = 25°C, I F = -2.0A, di/dt = 100A/µs
130
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7343
N-Channel
100
100
VGS
15V
12V
10V
8.0V
4.5V
6.0V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
10
3.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
TJ = 25 ° C
TJ = 150 ° C
10
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 25V
20µs PULSE WIDTH
1
3
4
5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7343
ID = 4.7A
(Ω)
0.0
-60 -40 -20
R DS (on), Drain-to-Source On Resistance
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
N-Channel
2.0
1.5
1.0
0.5
VGS = 10V
0
20
40
60
80 100 120 140 160
0.120
0.100
0.080
VGS = 4.5V
0.060
VGS = 10V
0.040
0
10
TJ , Junction Temperature ( °C)
200
0.10
0.08
I D = 4.7A
0.06
0.04
A
0
2
4
6
8
V G S , Gate-to-Source V oltage (V )
Fig 7. Typical On-Resistance Vs. Gate
Voltage
10
EAS , Single Pulse Avalanche Energy (mJ)
0.12
RDS(on) , Drain-to-Source On Resistance ( Ω )
30
40
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
4
20
I D , Drain Current (A)
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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IRF7343
N-Channel
1200
VGS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
400
Coss
200
ID = 4.5A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
Crss
0
0
1
10
0
100
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7343
100
P-Channel
100
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-3.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-3.0V
1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
100
100
-ISD , Reverse Drain Current (A)
Fig 13. Typical Output Characteristics
-I D , Drain-to-Source Current (A)
Fig 12. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -25V
20µs PULSE WIDTH
1
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
6
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
TOP
7
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
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IRF7343
P-Channel
ID = -3.4 A
R DS (on), Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
TJ , Junction Temperature ( °C)
6
8
0.45
EAS , Single Pulse Avalanche Energy (mJ)
300
0.35
0.25
I D = -3.4 A
0.15
0.05
A
2
5
8
11
-V G S , G ate-to-S ource V oltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
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10
12
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
4
-I D , Drain Current (A)
14
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
7
IRF7343
1200
20
-VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
960
C, Capacitance (pF)
P-Channel
Ciss
720
480
Coss
240
Crss
0
1
10
ID = -3.1A
VDS = -48V
VDS = -30V
VDS = -12V
16
12
8
4
0
100
0
--VDS , Drain-to-Source Voltage (V)
10
20
30
40
QG , Total Gate Charge (nC)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7343
Package Outline
SO8 Outline
DIM
D
-B-
5
8
7
6
5
1
2
3
e
6X
0.25 (.010)
4
M
A M
K x 45°
e1
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
L
8X
A1
6
C
8X
M C A S B S
MILLIMETERS
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
H
E
-A-
INCHES
MIN
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6.46 ( .255 )
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
EXAM PLE : TH IS IS AN IR F7 101
31 2
IN TER N ATIO N AL
R EC TIF IER
LO G O
XXXX
F710 1
TOP
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D ATE C O DE (YW W )
Y = LAST D IGIT O F TH E YEAR
W W = W EEK
PAR T N UM BER
W AFER
LO T C O D E
(LAST 4 D IG ITS)
BO TTO M
9
IRF7343
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2.3 ( .4 84 )
1 1.7 ( .4 61 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TE S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.0 0
(12 .9 92 )
MAX.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
NOTE S :
1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1.
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Data and specifications subject to change without notice.
2/99
10
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