Numonyx M58WR016KU60ZA6U 16-, 32- and 64-mbit (x 16, mux i/o, multiple bank, burst) 1.8 v supply flash memory Datasheet

M58WR016KU M58WR016KL M58WR032KU
M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst)
1.8 V supply Flash memories
Features
■
Supply voltage
– VDD = 1.7 V to 2 V for Program, Erase and
Read
– VDDQ = 1.7 V to 2 V for I/O buffers
– VPP = 9 V for fast Program
■
Multiplexed address/data
■
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 86 MHz
– Random Access: 60 ns, 70 ns
■
Synchronous Burst Read Suspend
■
Programming time
– 10 µs by Word typical for Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (top or bottom location)
■
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
■
Common Flash Interface (CFI)
■
100,000 program/erase cycles per block
December 2007
FBGA
VFBGA44 (ZA)
7.5 × 5 mm
■
Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M58WR016KU: 8823h
M58WR032KU: 8828h
M58WR064KU: 88C0h
– Bottom Device Code,
M58WR016KL: 8824h
M58WR032KL: 8829h
M58WR064KL: 88C1h
■
ECOPACK® packages available
Rev 2
1/123
www.numonyx.com
1
Contents
M58WRxxxKU, M58WRxxxKL
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3
2.1
Address inputs (ADQ0-ADQ15, A16-Amax) . . . . . . . . . . . . . . . . . . . . . . . 17
2.2
Data input/output (ADQ0-ADQ15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.4
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.5
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.6
Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.7
Reset/Power-Down (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.8
Latch Enable (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.9
Clock (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.10
Wait (WAIT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.11
Bus Invert (BINV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.12
VDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.13
VDDQ supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.14
VPP Program supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.15
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.16
VSSQ ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1
Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.2
Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.3
Address Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.4
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.5
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.6
Reset/Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5
Command interface - Standard commands . . . . . . . . . . . . . . . . . . . . . 23
5.1
2/123
Read Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
M58WRxxxKU, M58WRxxxKL
6
5.2
Read Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3
Read Electronic Signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.4
Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.5
Clear Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.6
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.7
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.8
Program/Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.9
Program/Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.10
Protection Register Program command . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.11
Set Configuration Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.12
Block Lock command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
5.13
Block Unlock command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
5.14
Block Lock-Down command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Command interface - Factory program commands . . . . . . . . . . . . . . . 31
6.1
Double Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.2
Quadruple Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.3
Enhanced Factory Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.4
7
Contents
6.3.1
Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.3.2
Program Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.3.3
Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.3.4
Exit Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Quadruple Enhanced Factory Program command . . . . . . . . . . . . . . . . . . 35
6.4.1
Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6.4.2
Load Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6.4.3
Program and Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.4.4
Exit Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
7.1
Program/Erase Controller Status bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . 38
7.2
Erase Suspend Status bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
7.3
Erase Status bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
7.4
Program Status bit (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
7.5
VPP Status bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
7.6
Program Suspend Status bit (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3/123
Contents
8
9
M58WRxxxKU, M58WRxxxKL
7.7
Block Protection Status bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
7.8
Bank Write/Multiple Word Program Status bit (SR0) . . . . . . . . . . . . . . . . 40
Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
8.1
Read Select bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
8.2
Bus Invert Configuration (CR14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
8.3
X-Latency bits (CR13-CR11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
8.4
Wait Polarity bit (CR10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
8.5
Data Output Configuration bit (CR9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
8.6
Wait Configuration bit (CR8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
8.7
Burst Type bit (CR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
8.8
Valid Clock Edge bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
8.9
Power-Down bit (CR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
8.10
Wrap Burst bit (CR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
8.11
Burst length bits (CR2-CR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Read modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
9.1
Asynchronous Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
9.2
Synchronous Burst Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
9.2.1
9.3
Synchronous Burst Read Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Single Synchronous Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
10
Dual operations and multiple bank architecture . . . . . . . . . . . . . . . . . 54
11
Block locking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
11.1
Reading a block’s lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
11.2
Locked state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
11.3
Unlocked state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
11.4
Lock-Down state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
11.5
Locking operations during Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . 57
12
Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 59
13
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
4/123
M58WRxxxKU, M58WRxxxKL
Contents
14
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
15
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
16
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Appendix A Block address tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Appendix B Common Flash Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Appendix C Flowcharts and pseudocodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
16.1
Enhanced Factory Program pseudocode . . . . . . . . . . . . . . . . . . . . . . . . 114
16.2
Quadruple enhanced factory program pseudocode . . . . . . . . . . . . . . . . 116
Appendix D Command interface state tables. . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
5/123
List of tables
M58WRxxxKU, M58WRxxxKL
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Table 43.
Table 44.
Table 45.
Table 46.
Table 47.
Table 48.
6/123
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
M58WR016KU/L bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
M58WR032KU/L bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
M58WR064KU/L bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Command codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Standard commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Electronic signature codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Factory Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Status Register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
X-latency settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Dual operations allowed in other banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Dual operations allowed in same bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Dual operation limitations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Program, erase times and endurance cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Operating and ac measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
DC characteristics - currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
DC characteristics - voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Asynchronous Read ac characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Synchronous Read ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Write ac characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Write ac characteristics, Chip Enable controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Reset and Power-up ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
VFBGA44 7.5 × 5 mm, 10 × 4 ball array, 0.50 mm pitch, package mechanical data . . . . . 77
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Top boot block addresses, M58WR016KU. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Bottom boot block addresses, M58WR016KL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Top boot block addresses, M58WR032KU. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Bottom boot block addresses, M58WR032KL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Top boot block addresses, M58WR064KU. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Bottom boot block addresses, M58WR064KL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
CFI query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
CFI query system interface information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Protection Register information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Burst Read Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Bank and Erase block region information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Bank and Erase block region 1 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Bank and Erase block region 2 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Command interface states - modify table, next state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Command interface states - Modify table, next output . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
M58WRxxxKU, M58WRxxxKL
Table 49.
Table 50.
Table 51.
List of tables
Command interface states - Lock table, next state. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Command interface states - Lock table, next output . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
7/123
List of figures
M58WRxxxKU, M58WRxxxKL
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
8/123
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VFBGA44 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
M58WR016KU/L memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
M58WR032KU/L memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
M58WR064KU/L memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Protection Register memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
X-latency and data output configuration example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Wait configuration example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Asynchronous random access read ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Synchronous Burst Read ac waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Single Synchronous Read ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Synchronous Burst Read Suspend ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Clock input ac waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Write ac waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Write ac waveforms, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Reset and Power-up ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
VFBGA44 7.5 × 5 mm, 10 × 4 ball array, 0.50 mm pitch, bottom view package outline . . 76
Program flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Double Word Program flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Quadruple Word Program flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Program Suspend & Resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . 108
Block Erase flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Erase Suspend & Resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Locking operations flowchart and pseudocode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Protection Register Program flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . 112
Enhanced Factory Program flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Quadruple enhanced factory program flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
M58WRxxxKU, M58WRxxxKL
1
Description
Description
The M58WR016KU/L, M58WR032KU/L and M58WR064KU/L are 16-Mbit (1 Mbit × 16), 32Mbit (2 Mbit × 16) and 64-Mbit (4 Mbit × 16) non-volatile Flash memories, respectively. In the
rest of the document, they will be referred to as M58WRxxxKU/L unless otherwise specified.
The M58WRxxxKU/L may be erased electrically at block level and programmed in-system
on a Word-by-Word basis using a 1.7 V to 2 V VDD supply for the circuitry and a 1.7 V to 2 V
VDDQ supply for the Input/Output pins. An optional 9 V VPP power supply is provided to
speed up customer programming.
The first sixteen address lines are multiplexed with the Data Input/Output signals on the
multiplexed address/data bus ADQ0-ADQ15. The remaining address lines, A16-Amax, are
the Most Significant Bit addresses.
The device features an asymmetrical block architecture:
●
the M58WR016KU/L have an array of 39 blocks, and are divided into 4 Mbit banks.
There are 3 banks each containing 8 main blocks of 32 Kwords, and one parameter
bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
●
the M58WR032KU/L have an array of 71 blocks, and are divided into 4 Mbit banks.
There are 7 banks each containing 8 main blocks of 32 Kwords, and one parameter
bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
●
the M58WR064KU/L have an array of 135 blocks, and are divided into 4 Mbit banks.
There are 15 banks each containing 8 main blocks of 32 Kwords, and one parameter
bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
The Multiple Bank Architecture allows Dual Operations, while programming or erasing in
one bank, Read operations are possible in other banks. Only one bank at a time is allowed
to be in Program or Erase mode. It is possible to perform burst reads that cross bank
boundaries. The bank architectures are summarized in Tables 2, 3 and 4, and the memory
maps are shown in Figures 3, 4 and 5. The Parameter Blocks are located at the top of the
memory address space for the M58WR016KU, M58WR032KU and M58WR064KU, and at
the bottom for the M58WR016KL, M58WR032KL and M58WR064KL.
Each block can be erased separately. Erase can be suspended, in order to perform program
in any other block, and then resumed. Program can be suspended to read data in any other
block and then resumed. Each block can be programmed and erased over 100,000 cycles
using the supply voltage VDD. There are two Enhanced Factory programming commands
available to speed up programming.
Program and Erase commands are written to the Command Interface of the memory. An
internal Program/Erase Controller takes care of the timings necessary for program and
erase operations. The end of a program or erase operation can be detected and any error
conditions identified in the Status Register. The command set required to control the
memory is consistent with JEDEC standards.
The device supports synchronous burst read and asynchronous read from all blocks of the
memory array; at power-up the device is configured for asynchronous read. In synchronous
burst mode, data is output on each clock cycle at frequencies of up to 86 MHz. The
synchronous burst read operation can be suspended and resumed.
9/123
Description
M58WRxxxKU, M58WRxxxKL
The device features an Automatic Standby mode. When the bus is inactive during
Asynchronous Read operations, the device automatically switches to the Automatic Standby
mode. In this condition the power consumption is reduced to the standby value IDD4 and the
outputs are still driven.
The M58WRxxxKU/L features an instant, individual block locking scheme that allows any
block to be locked or unlocked with no latency, enabling instant code and data protection. All
blocks have three levels of protection. They can be locked and locked-down individually
preventing any accidental programming or erasure. There is an additional hardware
protection against program and erase. When VPP ≤VPPLK all blocks are protected against
program or erase. All blocks are locked at Power- Up.
The device includes a Protection Register to increase the protection of a system’s design.
The Protection Register is divided into two segments: a 64 bit segment containing a unique
device number written by Numonyx, and a 128 bit segment One-Time-Programmable (OTP)
by the user. The user programmable segment can be permanently protected. Figure 6,
shows the Protection Register memory map.
The memory is available in a VFBGA44 7.5 × 5 mm, 10 × 4 active ball array, 0.5 mm pitch
package. It is supplied with all the bits erased (set to ’1’).
10/123
M58WRxxxKU, M58WRxxxKL
Figure 1.
Description
Logic diagram
VDD VDDQ VPP
16
A16-Amax(1)
ADQ0-ADQ15
W
E
M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
G
RP
WP
WAIT
BINV
L
K
VSS
VSSQ
AI13519
1. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the
M58WR064KU/L.
Table 1.
Signal names
Name
Description
Direction
A16-Amax(1)
Address inputs
ADQ0-ADQ15
Data input/outputs or Address inputs, Command inputs
E
Chip Enable
Input
G
Output Enable
Input
W
Write Enable
Input
RP
Reset/Power-Down
Input
WP
Write Protect
Input
K
Clock
Input
L
Latch Enable
Input
WAIT
Wait
BINV
Bus Invert
VDD
Supply voltage
VDDQ
Supply voltage for input/output buffers
VPP
Optional supply voltage for Fast Program & Erase
VSS
Ground
VSSQ
Ground input/output supply
NC
Not connected internally
Inputs
I/O
Output
I/O
1. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
11/123
12/123
VSS
ADQ15
E
F
H
ADQ14
ADQ7
A16
A21/
NC(1)
4
VSSQ
ADQ5
ADQ4
ADQ12
ADQ13
ADQ6
BINV
L
A20/
NC(1)
VDD
7
K
6
VSS
5
ADQ11
ADQ3
RP
W
8
ADQ10
ADQ2
WP
VPP
9
VDDQ
ADQ9
A18
A19
10
ADQ1
ADQ8
E
A17
11
Note1: Ball D5 is A20 in the M58WR032KU/L and M58WR064KU/L, it is Not Connected internally (NC) in the M58WR016KU/L.
Ball C4 is A21 in the M58WR064KU/L, it is Not Connected internally (NC) in the M58WR016KU/L and M58WR032KU/L.
VDDQ
D
G
WAIT
3
C
NC
NC
2
ADQ0
G
VSSQ
NC
12
13
NC
NC
14
AI13520
Figure 2.
B
A
1
Description
M58WRxxxKU, M58WRxxxKL
VFBGA44 connections (top view through package)
M58WRxxxKU, M58WRxxxKL
Table 2.
Description
M58WR016KU/L bank architecture
Number
Bank Size
Parameter Blocks
Main Blocks
Parameter Bank
4 Mbit
8 blocks of 4 Kword
7 blocks of 32 Kword
Bank 1
4 Mbit
-
8 blocks of 32 Kword
Bank 2
4 Mbit
-
8 blocks of 32 Kword
Bank 3
4 Mbit
-
8 blocks of 32 Kword
Table 3.
M58WR032KU/L bank architecture
Parameter Bank
4 Mbit
8 blocks of 4 Kword
7 blocks of 32 Kword
Bank 1
4 Mbit
-
8 blocks of 32 Kword
Bank 2
4 Mbit
-
8 blocks of 32 Kword
Bank 3
4 Mbit
-
8 blocks of 32 Kword
----
Main Blocks
----
Parameter Blocks
----
Bank Size
----
Number
Bank 6
4 Mbit
-
8 blocks of 32 Kword
Bank 7
4 Mbit
-
8 blocks of 32 Kword
Table 4.
M58WR064KU/L bank architecture
Parameter Bank
4 Mbit
8 blocks of 4 Kword
7 blocks of 32 Kword
Bank 1
4 Mbit
-
8 blocks of 32 Kword
Bank 2
4 Mbit
-
8 blocks of 32 Kword
Bank 3
4 Mbit
-
8 blocks of 32 Kword
----
Main Blocks
----
Parameter Blocks
----
Bank Size
----
Number
Bank 14
4 Mbit
-
8 blocks of 32 Kword
Bank 15
4 Mbit
-
8 blocks of 32 Kword
13/123
Description
M58WRxxxKU, M58WRxxxKL
Figure 3.
M58WR016KU/L memory map
M58WR016KL - Bottom Boot Block
Address lines ADQ0-ADQ15 and A16-A19
M58WR016KU - Top Boot Block
Address lines ADQ0-ADQ15 and A16-A19
00000h
07FFFh
8 Main
Blocks
Bank 3
38000h
3FFFFh
40000h
47FFFh
32 KWord
8 Main
Blocks
32 KWord
8 Main
Blocks
Parameter
Bank
F0000h
F7FFFh
F8000h
F8FFFh
FF000h
FFFFFh
78000h
7FFFFh
80000h
87FFFh
32 KWord
B8000h
BFFFFh
C0000h
C7FFFh
4 KWord
4 KWord
8 Parameter
Blocks
4KWord
32 KWord
7 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
Bank 2
32 KWord
8 Parameter
Blocks
4 KWord
Bank 1
32 KWord
7 Main
Blocks
07000h
07FFFh
08000h
0FFFFh
38000h
3FFFFh
40000h
47FFFh
32 KWord
Bank 1
B8000h
BFFFFh
C0000h
C7FFFh
Parameter
Bank
32 KWord
Bank 2
78000h
7FFFFh
80000h
87FFFh
00000h
00FFFh
32 KWord
32 KWord
32 KWord
8 Main
Blocks
Bank 3
F8000h
FFFFFh
32 KWord
AI13521
14/123
M58WRxxxKU, M58WRxxxKL
Figure 4.
Description
M58WR032KU/L memory map
M58WR032KL - Bottom Boot Block
Address lines A20-A16 and ADQ15-ADQ0
M58WR032KU - Top Boot Block
Address lines A20-A16 and ADQ15-ADQ0
000000h
007FFFh
32 KWord
038000h
03FFFFh
32 KWord
Bank 7
100000h
107FFFh
8 Main
Blocks
Parameter
Bank
1F0000h
1F7FFFh
1F8000h
1F8FFFh
1FF000h
1FFFFFh
8 Parameter
Blocks
4KWord
32 KWord
7 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
Bank 2
0B8000h
0BFFFFh
0C0000h
0C7FFFh
32 KWord
Bank 1
1B8000h
1BFFFFh
1C0000h
1C7FFFh
078000h
07FFFFh
080000h
087FFFh
32 KWord
8 Main
Blocks
4 KWord
Bank 1
32 KWord
8 Main
Blocks
007000h
007FFFh
008000h
00FFFFh
038000h
03FFFFh
040000h
047FFFh
32 KWord
Bank 2
178000h
17FFFFh
180000h
187FFFh
Parameter
Bank
32 KWord
Bank 3
138000h
13FFFFh
140000h
147FFFh
000000h
000FFFh
8 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
Bank 3
32 KWord
0F8000h
0FFFFFh
32 KWord
1C0000h
1C7FFFh
32 KWord
1F8000h
1FFFFFh
32 KWord
32 KWord
7 Main
Blocks
32 KWord
4 KWord
8 Parameter
Blocks
4 KWord
8 Main
Blocks
Bank 7
AI10158
15/123
Description
M58WRxxxKU, M58WRxxxKL
Figure 5.
M58WR064KU/L memory map
M58WR064KU - Top Boot Block
Address lines A21-A16 and ADQ15-ADQ0
M58WR064KL - Bottom Boot Block
Address lines A21-A16 and ADQ15-ADQ0
000000h
007FFFh
32 KWord
000000h
000FFFh
038000h
03FFFFh
32 KWord
8 Main
Blocks
Bank 15
300000h
307FFFh
8 Main
Blocks
378000h
37FFFFh
380000h
387FFFh
Parameter
Bank
3F0000h
3F7FFFh
3F8000h
3F8FFFh
3FF000h
3FFFFFh
0B8000h
0BFFFFh
0C0000h
0C7FFFh
32 KWord
8 Main
Blocks
4KWord
32 KWord
7 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
Bank 2
32 KWord
Bank 1
3B8000h
3BFFFFh
3C0000h
3C7FFFh
078000h
07FFFFh
080000h
087FFFh
32 KWord
8 Main
Blocks
8 Parameter
Blocks
Bank 1
32 KWord
Bank 2
007000h
007FFFh
008000h
00FFFFh
038000h
03FFFFh
040000h
047FFFh
32 KWord
Bank 3
338000h
33FFFFh
340000h
347FFFh
Parameter
Bank
4 KWord
32 KWord
32 KWord
8 Main
Blocks
Bank 3
32 KWord
0F8000h
0FFFFFh
32 KWord
3C0000h
3C7FFFh
32 KWord
3F8000h
3FFFFFh
32 KWord
32 KWord
7 Main
Blocks
32 KWord
4 KWord
8 Parameter
Blocks Bank 15
4 KWord
8 Main
Blocks
AI13456
16/123
M58WRxxxKU, M58WRxxxKL
2
Signal descriptions
Signal descriptions
See Figure 1: Logic diagram and Table 1: Signal names, for a brief overview of the signals
connected to this device.
2.1
Address inputs (ADQ0-ADQ15, A16-Amax)
Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in
the M58WR064KU/L.
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the Program/Erase Controller.
2.2
Data input/output (ADQ0-ADQ15)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
or inputs a command or the data to be programmed during a Bus Write operation.
2.3
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and
sense amplifiers. When Chip Enable is at VILand Reset is at VIH the device is in active
mode. When Chip Enable is at VIH the memory is deselected, the outputs are high
impedance and the power consumption is reduced to the standby level.
2.4
Output Enable (G)
The Output Enable controls data outputs during the Bus Read operation of the memory.
2.5
Write Enable (W)
The Write Enable controls the Bus Write operation of the memory’s Command Interface.
The data is latched on the rising edge of Chip Enable or Write Enable whichever occurs first.
2.6
Write Protect (WP)
Write Protect is an input that gives an additional hardware protection for each block. When
Write Protect is at VIL, the Lock-Down is enabled and the protection status of the LockedDown blocks cannot be changed. When Write Protect is at VIH, the Lock-Down is disabled
and the Locked-Down blocks can be locked or unlocked. (refer to Table 17: Lock status).
17/123
Signal descriptions
2.7
M58WRxxxKU, M58WRxxxKL
Reset/Power-Down (RP)
The Reset/Power-Down input provides a hardware reset of the memory, and/or power-down
functions, depending on the settings in the Configuration Register. When Reset/PowerDown is at VIL, the memory is in reset mode: the outputs are high impedance and the
current consumption is reduced to the Standby Supply Current IDD3, or to the Reset/PowerDown Supply Current IDD2 if the Power-Down function is enabled. Refer to Table 22: DC
characteristics - currents, for the value of IDD2 and IDD3. After reset all blocks are in the
Locked state and the bits of the Configuration Register are reset except for Power-Down bit
CR5. When Reset/Power-Down is at VIH, the device is in normal operation. Exiting reset
mode the device enters Asynchronous Read mode, but a negative transition of Chip Enable
or Latch Enable is required to ensure valid data outputs.
2.8
Latch Enable (L)
Latch Enable latches the ADQ0-ADQ15 and A16-Amax address bits on its rising edge. The
address latch is transparent when Latch Enable is at VIL and it is inhibited when Latch
Enable is at VIH.
2.9
Clock (K)
The clock input synchronizes the memory to the microcontroller during synchronous read
operations; the address is latched on a Clock edge (rising or falling, according to the
configuration settings) when Latch Enable is at VIL. Clock is don't care during asynchronous
read and in write operations.
2.10
Wait (WAIT)
Wait is an output signal used during synchronous read to indicate whether the data on the
output bus are valid. This output is high impedance when Chip Enable is at VIH or Reset is
at VIL. It can be configured to be active during the wait cycle or one clock cycle in advance.
The WAIT signal is forced deasserted when Output Enable is at VIH.
2.11
Bus Invert (BINV)
Bus invert is an input/output signal used to reduce the amount of power required to switch
the external address/data bus. Power is saved by inverting the data on ADQ0-ADQ15 each
time the inversion results in a reduced number of pin transitions. Data is inverted when BINV
is at VIH (i.e. if the data is AAAAh and BINV is at VIH, AAAAh becomes 5555h). BINV is high
impedance when Chip Enable or Output Enable is at VIH or when Reset/Power Down is at
VIL.
2.12
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for all operations (Read, Program and Erase).
18/123
M58WRxxxKU, M58WRxxxKL
2.13
Signal descriptions
VDDQ supply voltage
VDDQ provides the power supply to the I/O pins and enables all Outputs to be powered
independently from VDD. VDDQ can be tied to VDD or can use a separate supply.
2.14
VPP Program supply voltage
VPP is both a control input and a power supply pin. The two functions are selected by the
voltage range applied to the pin.
If VPP is kept in a low voltage range (0 V to VDDQ) VPP is seen as a control input. In this case
a voltage lower than VPPLK gives an absolute protection against program or erase, while
VPP in the VPP1 range enables these functions (see Tables 22 and 23, DC Characteristics
for the relevant values). VPP is only sampled at the beginning of a program or erase; a
change in its value after the operation has started does not have any effect and program or
erase operations continue.
If VPP is in the range of VPPH it acts as a power supply pin. In this condition VPP must be
stable until the Program/Erase algorithm is completed.
2.15
VSS ground
VSS ground is the reference for the core supply. It must be connected to the system ground.
2.16
VSSQ ground
VSSQ ground is the reference for the input/output circuitry driven by VDDQ. VSSQ must be
connected to VSS.
Note: Each device in a system should have VDD, VDDQ and VPP decoupled with a 0.1 µF
ceramic capacitor close to the pin (high frequency, inherently low inductance capacitors
should be as close as possible to the package). See Figure 10: AC measurement load
circuit. The PCB track widths should be sufficient to carry the required VPP program and
erase currents.
19/123
Bus operations
3
M58WRxxxKU, M58WRxxxKL
Bus operations
There are six standard bus operations that control the device. These are Bus Read, Bus
Write, Address Latch, Output Disable, Standby and Reset. See Table 5: Bus operations, for
a summary.
Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the
memory and do not affect Bus Write operations.
3.1
Bus Read
Bus Read operations are used to output the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common Flash Interface. Both Chip Enable and
Output Enable must be at VIL in order to perform a read operation. The Chip Enable input
should be used to enable the device. Output Enable should be used to gate data onto the
output. The data read depends on the previous command written to the memory (see
Command Interface section). See Figures 11, 12 and 13 Read AC Waveforms, and Tables
24 and 25 Read AC Characteristics, for details of when the output becomes valid.
3.2
Bus Write
Bus Write operations write Commands to the memory or latch Input Data to be
programmed. A bus write operation is initiated when Chip Enable and Write Enable are at
VIL with Output Enable at VIH. Commands and Input Data are latched on the rising edge of
Write Enable or Chip Enable, whichever occurs first. The addresses must also be latched
prior to the write operation by toggling Latch Enable (when Chip Enable is at VIL). The Latch
Enable must be tied to VIH during the bus write operation.
See Figures 16 and 17, Write AC Waveforms, and Tables 26 and 27, Write AC
Characteristics, for details of the timing requirements.
3.3
Address Latch
Address latch operations input valid addresses. Both Chip enable and Latch Enable must be
at VIL during address latch operations. The addresses are latched on the rising edge of
Latch Enable.
3.4
Output Disable
The outputs are high impedance when the Output Enable is at VIH.
20/123
M58WRxxxKU, M58WRxxxKL
3.5
Bus operations
Standby
Standby disables most of the internal circuitry allowing a substantial reduction of the current
consumption. The memory is in standby when Chip Enable and Reset are at VIH. The power
consumption is reduced to the standby level and the outputs are set to high impedance,
independently from the Output Enable or Write Enable inputs. If Chip Enable switches to VIH
during a program or erase operation, the device enters Standby mode when finished.
3.6
Reset/Power-Down
During reset mode the memory is deselected and the outputs are high impedance. The
memory is in reset mode when Reset/Power-Down is at VIL. The power consumption is
reduced to the Standby level, or to the Reset/Power-Down level if the Power-Down function
is enabled, independently of the Chip Enable, Output Enable or Write Enable inputs. If
Reset/Power-Down is pulled to VSS during a Program or Erase, this operation is aborted
and the memory content is no longer valid.
Table 5.
Bus operations
Operation
WAIT(1)
E
G
W
L
RP
Bus Read
VIL
VIL
VIH
VIH
VIH
Data Output
Bus Write
VIL
VIH
VIL
VIH
VIH
Data Input
Address Latch
VIL
VIH
x
VIL
VIH
Address Input
Output Disable
VIL
VIH
VIH
VIH
VIH
Hi-Z
VIH
X(2)
X
X
VIH
Hi-Z
Hi-Z
X
X
X
X
VIL
Hi-Z
Hi-Z
Standby
Reset/PowerDown
ADQ15-ADQ0
1. WAIT signal polarity is configured using the Set Configuration Register command.
2. X = Don't care.
21/123
Command interface
4
M58WRxxxKU, M58WRxxxKL
Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. An internal
Program/Erase Controller handles all timings and verifies the correct execution of the
Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor the progress or the result of the operation.
The Command Interface is reset to read mode when power is first applied, when exiting from
Reset or whenever VDD is lower than VLKO. Command sequences must be followed exactly.
Any invalid combination of commands will be ignored.
Refer to Table 6: Command codes, and Appendix D, Tables 47, 48, 49 and 50, Command
Interface States - Modify and Lock Tables, for a summary of the Command Interface.
The Command Interface is split into two types of commands: Standard commands and
Factory Program commands. The following sections explain in detail how to perform each
command.
Table 6.
Command codes
Hex Code
22/123
Command
01h
Block Lock Confirm
03h
Set Configuration Register Confirm
10h
Alternative Program Setup
20h
Block Erase Setup
2Fh
Block Lock-Down Confirm
30h
Enhanced Factory Program Setup
35h
Double Word Program Setup
40h
Program Setup
50h
Clear Status Register
56h
Quadruple Word Program Setup
60h
Block Lock Setup, Block Unlock Setup, Block Lock Down Setup and Set
Configuration Register Setup
70h
Read Status Register
75h
Quadruple Enhanced Factory Program Setup
90h
Read Electronic Signature
98h
Read CFI Query
B0h
Program/Erase Suspend
C0h
Protection Register Program
D0h
Program/Erase Resume, Block Erase Confirm, Block Unlock Confirm or Enhanced
Factory Program Confirm
FFh
Read Array
M58WRxxxKU, M58WRxxxKL
5
Command interface - Standard commands
Command interface - Standard commands
The following commands are the basic commands used to read, write to and configure the
device. Refer to Table 7: Standard commands, in conjunction with the following text
descriptions.
5.1
Read Array command
The Read Array command returns the addressed bank to Read Array mode. One Bus Write
cycle is required to issue the Read Array command and return the addressed bank to Read
Array mode. Subsequent read operations will read the addressed location and output the
data. A Read Array command can be issued in one bank while programming or erasing in
another bank. However if a Read Array command is issued to a bank currently executing a
Program or Erase operation the command will be executed but the output data is not
guaranteed.
5.2
Read Status Register command
The Status Register indicates when a Program or Erase operation is complete and the
success or failure of operation itself. Issue a Read Status Register command to read the
Status Register content. The Read Status Register command can be issued at any time,
even during Program or Erase operations.
The following read operations output the content of the Status Register of the addressed
bank. The Status Register is latched on the falling edge of E or G signals, and can be read
until E or G returns to VIH. Either E or G must be toggled to update the latched data. See
Table 10 for the description of the Status Register Bits. This mode supports asynchronous
or single synchronous reads only.
5.3
Read Electronic Signature command
The Read Electronic Signature command reads the Manufacturer and Device Codes, the
Block Locking Status, the Protection Register, and the Configuration Register.
The Read Electronic Signature command consists of one write cycle to an address within
one of the banks. A subsequent Read operation in the same bank will output the
Manufacturer Code, the Device Code, the protection Status of the blocks in the targeted
bank, the Protection Register, or the Configuration Register (see Table 8).
The Read Electronic Signature command can be issued at any time, even during program or
erase operations, except during Protection Register Program operations. Dual operations
between the Parameter bank and the Electronic Signature location are not allowed (see
Table 16: Dual operation limitations for details).
If a Read Electronic Signature command is issued in a bank that is executing a Program or
Erase operation the bank will go into Read Electronic Signature mode, subsequent Bus
Read cycles will output the Electronic Signature data and the Program/Erase controller will
continue to program or erase in the background. This mode supports asynchronous or
single synchronous reads only, it does not support synchronous burst reads.
23/123
Command interface - Standard commands
5.4
M58WRxxxKU, M58WRxxxKL
Read CFI Query command
The Read CFI Query command is used to read data from the Common Flash Interface
(CFI). The Read CFI Query Command consists of one Bus Write cycle, to an address within
one of the banks. Once the command is issued subsequent Bus Read operations in the
same bank read from the Common Flash Interface.
If a Read CFI Query command is issued in a bank that is executing a Program or Erase
operation the bank will go into Read CFI Query mode, subsequent Bus Read cycles will
output the CFI data and the Program/Erase controller will continue to Program or Erase in
the background. This mode supports asynchronous or single synchronous reads only, it
does not support synchronous burst reads.
The status of the other banks is not affected by the command (see Table 14). After issuing a
Read CFI Query command, a Read Array command should be issued to the addressed
bank to return the bank to Read Array mode. Dual operations between the
Parameter Bank and the CFI memory space are not allowed (see Table 16: Dual operation
limitations).
See Appendix B: Common Flash Interface, Tables 37, 38, 39, 40, 41, 42, 43, 44, 45 and 46
for details on the information contained in the Common Flash Interface memory area.
5.5
Clear Status Register command
The Clear Status Register command can be used to reset (set to ‘0’) error bits SR1, SR3,
SR4 and SR5 in the Status Register. One bus write cycle is required to issue the Clear
Status Register command. After the Clear Status Register command the bank returns to
read mode.
The error bits in the Status Register do not automatically return to ‘0’ when a new command
is issued. The error bits in the Status Register should be cleared before attempting a new
Program or Erase command.
24/123
M58WRxxxKU, M58WRxxxKL
5.6
Command interface - Standard commands
Block Erase command
The Block Erase command can be used to erase a block. It sets all the bits within the
selected block to ’1’. All previous data in the block is lost. If the block is protected then the
Erase operation will abort, the data in the block will not be changed and the Status Register
will output the error. The Block Erase command can be issued at any moment, regardless of
whether the block has been programmed or not.
Two Bus Write cycles are required to issue the command.
●
The first bus cycle sets up the Erase command.
●
The second latches the block address in the Program/Erase Controller and starts it.
If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits SR4 and SR5
are set and the command aborts. Erase aborts if Reset turns to VIL. As data integrity cannot
be guaranteed when the Erase operation is aborted, the block must be erased again.
Once the command is issued the device outputs the Status Register data when any address
within the bank is read. At the end of the operation the bank will remain in Read Status
Register mode until a Read Array, Read CFI Query or Read Electronic Signature command
is issued.
During Erase operations the bank containing the block being erased will only accept the
Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the
Program/Erase Suspend command, all other commands will be ignored. Refer to Dual
Operations section for detailed information about simultaneous operations allowed in banks
not being erased. Typical Erase times are given in Table 18: Program, erase times and
endurance cycles.
See Appendix C, Figure 24: Block Erase flowchart and pseudocode, for a suggested
flowchart for using the Block Erase command.
5.7
Program command
The memory array can be programmed word-by-word. Only one Word in one bank can be
programmed at any one time. If the block is protected then the Program operation will abort,
the data in the block will not be changed and the Status Register will output the error.
Two bus write cycles are required to issue the Program Command.
●
The first bus cycle sets up the Program command.
●
The second latches the Address and the Data to be written and starts the
Program/Erase Controller.
After programming has started, read operations in the bank being programmed output the
Status Register content.
During Program operations the bank being programmed will only accept the Read Array,
Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase
Suspend command. Refer to Dual Operations section for detailed information about
simultaneous operations allowed in banks not being programmed. Typical Program times
are given in Table 18: Program, erase times and endurance cycles.
Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the
program operation is aborted, the memory location must be reprogrammed.
See Appendix C, Figure 20: Program flowchart and pseudocode, for the flowchart for using
the Program command.
25/123
Command interface - Standard commands
5.8
M58WRxxxKU, M58WRxxxKL
Program/Erase Suspend command
The Program/Erase Suspend command is used to pause a Program or Block Erase
operation.
One bus write cycle is required to issue the Program/Erase Suspend command. Once the
Program/Erase Controller has paused bits SR7, SR6 and/ or SR2 of the Status Register will
be set to ‘1’. The command can be addressed to any bank.
During Program/Erase Suspend the Command Interface will accept the Program/Erase
Resume, Read Array (cannot read the suspended block), Read Status Register, Read
Electronic Signature and Read CFI Query commands. Additionally, if the suspend operation
was Erase then the Clear Status Register, Set Configuration Register, Program, Block Lock,
Block Lock-Down or Block Unlock command will also be accepted. The block being erased
may be protected by issuing the Block Lock or Block Lock-Down commands. Only the blocks
not being erased may be read or programmed correctly. When the Program/Erase Resume
command is issued the operation will complete. Refer to the Dual Operations section for
detailed information about simultaneous operations allowed during Program/Erase
Suspend.
During a Program/Erase Suspend, the device can be placed in standby mode by taking Chip
Enable to VIH. Program/Erase is aborted if Reset turns to VIL.
See Appendix C, Figure 23: Program Suspend & Resume flowchart and pseudocode, and
Figure 25: Erase Suspend & Resume flowchart and pseudocode, for flowcharts for using
the Program/Erase Suspend command.
5.9
Program/Erase Resume command
The Program/Erase Resume command can be used to restart the Program/Erase Controller
after a Program/Erase Suspend command has paused it. One Bus Write cycle is required to
issue the command. The command can be written to any address.
The Program/Erase Resume command does not change the read mode of the banks. If the
suspended bank was in Read Status Register, Read Electronic signature or Read CFI
Query mode the bank remains in that mode and outputs the corresponding data. If the bank
was in Read Array mode subsequent read operations will output invalid data.
If a Program command is issued during a Block Erase Suspend, then the erase cannot be
resumed until the programming operation has completed. It is possible to accumulate
suspend operations. For example: suspend an erase operation, start a programming
operation, suspend the programming operation then read the array. See Appendix C,
Figure 23: Program Suspend & Resume flowchart and pseudocode, and Figure 25: Erase
Suspend & Resume flowchart and pseudocode, for flowcharts for using the Program/Erase
Resume command.
26/123
M58WRxxxKU, M58WRxxxKL
5.10
Command interface - Standard commands
Protection Register Program command
The Protection Register Program command is used to Program the 128 bit user One-TimeProgrammable (OTP) segment of the Protection Register and the Protection Register Lock.
The segment is programmed 16 bits at a time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two write cycles are required to issue the Protection Register Program command.
●
The first bus cycle sets up the Protection Register Program command.
●
The second latches the Address and the Data to be written to the Protection Register
and starts the Program/Erase Controller.
Read operations output the Status Register content after the programming has started.
The segment can be protected by programming bit 1 of the Protection Lock Register
(Figure 6: Protection Register memory map). Attempting to program a previously protected
Protection Register will result in a Status Register error. The protection of the Protection
Register is not reversible.
The Protection Register Program cannot be suspended. Dual operations between the
Parameter Bank and the Protection Register memory space are not allowed (see Table 16:
Dual operation limitations for details).
See Appendix C, Figure 27: Protection Register Program flowchart and pseudocode, for a
flowchart for using the Protection Register Program command.
5.11
Set Configuration Register command
The Set Configuration Register command is used to write a new value to the Configuration
Register which defines the burst length, type, X latency, Synchronous/Asynchronous Read
mode and the valid Clock edge configuration.
Two Bus Write cycles are required to issue the Set Configuration Register command.
●
The first cycle writes the setup command and the address corresponding to the
Configuration Register content.
●
The second cycle writes the Configuration Register data and the confirm command.
Once the command is issued the memory returns to Read mode.
The values of the Configuration Register must always be presented on ADQ15-ADQ0. CR0
is on ADQ0, CR1 on ADQ1, etc.; the other address bits are ignored.
27/123
Command interface - Standard commands
5.12
M58WRxxxKU, M58WRxxxKL
Block Lock command
The Block Lock command is used to lock a block and prevent Program or Erase operations
from changing the data in it. All blocks are locked at power-up or reset.
Two Bus Write cycles are required to issue the Block Lock command.
●
The first bus cycle sets up the Block Lock command.
●
The second Bus Write cycle latches the block address.
The lock status can be monitored for each block using the Read Electronic Signature
command. Table 17 shows the Lock Status after issuing a Block Lock command.
The Block Lock bits are volatile, once set they remain set until a hardware reset or powerdown/power-up. They are cleared by a Block Unlock command. Refer to the section, Block
Locking, for a detailed explanation. See Appendix C, Figure 26: Locking operations
flowchart and pseudocode, for a flowchart for using the Lock command.
5.13
Block Unlock command
The Block Unlock command is used to unlock a block, allowing the block to be programmed
or erased. Two Bus Write cycles are required to issue the Block Unlock command.
●
The first bus cycle sets up the Block Unlock command.
●
The second Bus Write cycle latches the block address.
The lock status can be monitored for each block using the Read Electronic Signature
command. Table 17 shows the protection status after issuing a Block Unlock command.
Refer to the section, Block Locking, for a detailed explanation and Appendix C, Figure 26:
Locking operations flowchart and pseudocode, for a flowchart for using the Unlock
command.
5.14
Block Lock-Down command
A locked or unlocked block can be locked-down by issuing the Block Lock-Down command.
A locked-down block cannot be programmed or erased, or have its protection status
changed when WP is low, VIL. When WP is high, VIH, the Lock-Down function is disabled
and the locked blocks can be individually unlocked by the Block Unlock command.
Two Bus Write cycles are required to issue the Block Lock-Down command.
●
The first bus cycle sets up the Block Lock command.
●
The second Bus Write cycle latches the block address.
The lock status can be monitored for each block using the Read Electronic Signature
command. Locked-Down blocks revert to the locked (and not locked-down) state when the
device is reset on power-down. Table 17 shows the Lock Status after issuing a Block LockDown command. Refer to the section, Block Locking, for a detailed explanation and
Appendix C, Figure 26: Locking operations flowchart and pseudocode, for a flowchart for
using the Lock-Down command.
28/123
M58WRxxxKU, M58WRxxxKL
Table 7.
Command interface - Standard commands
Standard commands
Commands
Cycles
Bus operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA(1)
SRD
Read
(1)
BKA
ESD
Read
BKA(1)
QD
Read Electronic Signature
1+
Write
BKA
90h
Read CFI Query
1+
Write
BKA
98h
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
BKA or
BA(2)
20h
Write
BA
D0h
Program
2
Write
BKA or
WA(2)
40h or 10h
Write
WA
PD
Program/Erase Suspend
1
Write
X(3)
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register
Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA or
BA(2)
60h
Write
BA
01h
Block Unlock
2
Write
BKA or
BA(2)
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA or
BA(2)
60h
Write
BA
2Fh
1. Must be same bank as in the first cycle. The signature addresses are listed in Table 8
2. Any address within the bank can be used.
3. X = Don't Care, WA = Word Address in targeted bank, RD = Read Data, SRD = Status Register Data,
ESD = Electronic Signature Data, QD = Query Data, BA = Block Address, BKA = Bank Address,
PD = Program Data, PRA = Protection Register Address, PRD = Protection Register Data,
CRD = Configuration Register Data.
29/123
Command interface - Standard commands
Table 8.
M58WRxxxKU, M58WRxxxKL
Electronic signature codes
Code
Address (h)
Data (h)
Bank Address + 00
0020
Top
Bank Address + 01
8823 (M58WR016KU)
8828 (M58WR032KU)
88C0 (M58WR064KU)
Bottom
Bank Address + 01
8824 (M58WR016KL)
8829 (M58WR032KL)
88C1 (M58WR064KL)
Manufacturer Code
Device Code
Block Protection
Locked
0001
Unlocked
0000
Locked and Locked-Down Block Address + 02
0003
Unlocked and LockedDown
0002
Die Revision Code
Bank Address + 03
DRC(1)
Configuration Register
Bank Address + 05
CR(2)
Numonyx Factory Default
Protection Register
Lock
OTP Area Permanently
Locked
0002
Bank Address + 80
0000
Bank Address + 81
Bank Address + 84
Unique Device Number
Bank Address + 85
Bank Address + 8C
OTP Area
Protection Register
1. DRC = Die Revision Code
2. CR = Configuration Register
Figure 6.
Protection Register memory map
PROTECTION REGISTER
8Ch
User Programmable OTP
85h
84h
Unique device number
81h
80h
Protection Register Lock
1
0
AI08614
30/123
M58WRxxxKU, M58WRxxxKL
6
Command interface - Factory program commands
Command interface - Factory program commands
The Factory Program commands are used to speed up programming. They require VPP to
be at VPPH. Refer to Table 9: Factory Program commands, in conjunction with the following
text descriptions.
6.1
Double Word Program command
The Double Word Program command improves the programming throughput by writing a
page of two adjacent words in parallel. The two words must differ only for the address
ADQ0. If the block is protected then the Double Word Program operation will abort, the data
in the block will not be changed and the Status Register will output the error.
If programming is attempted with VPP ≠ VPPH, the command is ignored.
Three bus write cycles are necessary to issue the Double Word Program command.
●
The first bus cycle sets up the Double Word Program Command.
●
The second bus cycle latches the Address and the Data of the first word to be written.
●
The third bus cycle latches the Address and the Data of the second word to be written
and starts the Program/Erase Controller.
Read operations in the bank being programmed output the Status Register content after the
programming has started.
During Double Word Program operations the bank being programmed will only accept the
Read Array, Read Status Register, Read Electronic Signature and Read CFI Query
command, all other commands will be ignored. Dual operations are not supported during
Double Word Program operations and the command cannot be suspended. Typical Program
times are given in Table 18: Program, erase times and endurance cycles.
Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the
program operation is aborted, the memory locations must be reprogrammed.
See Appendix C, Figure 21: Double Word Program flowchart and pseudocode, for the
flowchart for using the Double Word Program command.
31/123
Command interface - Factory program commands
6.2
M58WRxxxKU, M58WRxxxKL
Quadruple Word Program command
The Quadruple Word Program command improves the programming throughput by writing a
page of four adjacent words in parallel. The four words must differ only for the addresses
ADQ0 and ADQ1. If the block is protected then the Quadruple Word Program operation will
abort, the data in the block will not be changed and the Status Register will output the error.
If programming is attempted with VPP ≠ VPPH, the command is ignored.
Five bus write cycles are necessary to issue the Quadruple Word Program command.
●
The first bus cycle sets up the Double Word Program Command.
●
The second bus cycle latches the Address and the Data of the first word to be written.
●
The third bus cycle latches the Address and the Data of the second word to be written.
●
The fourth bus cycle latches the Address and the Data of the third word to be written.
●
The fifth bus cycle latches the Address and the Data of the fourth word to be written
and starts the Program/Erase Controller.
Read operations to the bank being programmed output the Status Register content after the
programming has started.
Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the
program operation is aborted, the memory locations must be reprogrammed.
During Quadruple Word Program operations the bank being programmed will only accept
the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query
command, all other commands will be ignored.
Dual operations are not supported during Quadruple Word Program operations and the
command cannot be suspended. Typical Program times are given in Table 18: Program,
erase times and endurance cycles.
See Appendix C, Figure 22: Quadruple Word Program flowchart and pseudocode, for the
flowchart for using the Quadruple Word Program command.
32/123
M58WRxxxKU, M58WRxxxKL
6.3
Command interface - Factory program commands
Enhanced Factory Program command
The Enhanced Factory Program command can be used to program large streams of data
within any one block. It greatly reduces the total programming time when a large number of
words are written to a block at any one time.
The use of the Enhanced Factory Program command requires certain operating conditions.
●
VPP must be set to VPPH
●
VDD must be within operating range
●
Ambient temperature TA must be 30°C ± 10°C
●
The targeted block must be unlocked
Dual operations are not supported during the Enhanced Factory Program operation and the
command cannot be suspended.
For optimum performance the Enhanced Factory Program commands should be limited to a
maximum of 100 program/erase cycles per block. If this limit is exceeded the internal
algorithm will continue to work properly but some degradation in performance is possible.
Typical Program times are given in Table 18. If the block is protected then the Enhanced
Factory Program operation will abort, the data in the block will not be changed and the
Status Register will output the error.
The Enhanced Factory Program command has four phases: the Setup Phase, the Program
Phase to program the data to the memory, the Verify Phase to check that the data has been
correctly programmed and reprogram if necessary and the Exit Phase. Refer to Table 9:
Factory Program commands, and Figure 28: Enhanced Factory Program flowchart.
6.3.1
Setup Phase
The Enhanced Factory Program command requires two Bus Write operations to initiate the
command.
●
The first bus cycle sets up the Enhanced Factory Program command.
●
The second bus cycle confirms the command.
The Status Register P/E.C. SR7 should be read to check that the P/E.C. is ready. After the
confirm command is issued, read operations output the Status Register data. The read
Status Register command must not be issued as it will be interpreted as data to program.
33/123
Command interface - Factory program commands
6.3.2
M58WRxxxKU, M58WRxxxKL
Program Phase
The Program Phase requires n+1 cycles, where n is the number of words (refer to Table 9:
Factory Program commands and Figure 28: Enhanced Factory Program flowchart).
Three successive steps are required to issue and execute the Program Phase of the
command.
1.
Use one Bus Write operation to latch the Start Address and the first word to be
programmed. The Status Register Bank Write Status bit SR0 should be read to check
that the P/E.C. is ready for the next word.
2.
Each subsequent word to be programmed is latched with a new Bus Write operation.
The address can either remain the Start Address, in which case the P/E.C. increments
the address location or the address can be incremented in which case the P/E.C.
jumps to the new address. If any address that is not in the same block as the Start
Address is given with data FFFFh, the Program Phase terminates and the Verify Phase
begins. The Status Register bit SR0 should be read between each Bus Write cycle to
check that the P/E.C. is ready for the next word.
3.
Finally, after all words have been programmed, write one Bus Write operation with data
FFFFh to any address outside the block containing the Start Address, to terminate the
programming phase.
The memory is now set to enter the Verify Phase.
6.3.3
Verify Phase
The Verify Phase is similar to the Program Phase in that all words must be resent to the
memory for them to be checked against the programmed data. The Program/Erase
Controller checks the stream of data with the data that was programmed in the Program
Phase and reprograms the memory location if necessary.
Three successive steps are required to execute the Verify Phase of the command.
1.
Use one Bus Write operation to latch the Start Address and the first word, to be
verified. The Status Register bit SR0 should be read to check that the Program/Erase
Controller is ready for the next word.
2.
Each subsequent word to be verified is latched with a new Bus Write operation. The
words must be written in the same order as in the Program Phase. The address can
remain the Start Address or be incremented. If any address that is not in the same
block as the Start Address is given with data FFFFh, the Verify Phase terminates.
Status Register bit SR0 should be read to check that the P/E.C. is ready for the next
word.
3.
Finally, after all words have been verified, write one Bus Write operation with data
FFFFh to any address outside the block containing the Start Address, to terminate the
Verify Phase.
If the Verify Phase is successfully completed the memory remains in Read Status Register
mode. If the Program/Erase Controller fails to reprogram a given location, the error will be
signaled in the Status Register.
6.3.4
Exit Phase
Status Register P/E.C. bit SR7 set to ‘1’ indicates that the device has returned to Read
mode. A full Status Register check should be done to ensure that the block has been
successfully programmed. See the section on the Status Register for more details.
34/123
M58WRxxxKU, M58WRxxxKL
6.4
Command interface - Factory program commands
Quadruple Enhanced Factory Program command
The Quadruple Enhanced Factory Program command can be used to program one or more
pages of four adjacent words in parallel. The four words must differ only for the addresses
ADQ0 and ADQ1. VPP must be set to VPPH during Quadruple Enhanced Factory Program. If
the block is protected then the Quadruple Enhanced Factory Program operation will abort,
the data in the block will not be changed and the Status Register will output the error.
It has four phases: the Setup Phase, the Load Phase where the data is loaded into the
buffer, the combined Program and Verify Phase where the loaded data is programmed to
the memory and then automatically checked and reprogrammed if necessary and the Exit
Phase. Unlike the Enhanced Factory Program it is not necessary to resubmit the data for the
Verify Phase. The Load Phase and the Program and Verify Phase can be repeated to
program any number of pages within the block.
6.4.1
Setup Phase
The Quadruple Enhanced Factory Program command requires one Bus Write operation to
initiate the load phase. After the setup command is issued, read operations output the
Status Register data. The Read Status Register command must not be issued as it will be
interpreted as data to program.
6.4.2
Load Phase
The Load Phase requires 4 cycles to load the data (refer to Table 9: Factory Program
commands and Figure 29: Quadruple enhanced factory program flowchart). Once the first
word of each Page is written it is impossible to exit the Load phase until all four words have
been written.
Two successive steps are required to issue and execute the Load Phase of the Quadruple
Enhanced Factory Program command.
1.
Use one Bus Write operation to latch the Start Address and the first word of the first
Page to be programmed. For subsequent Pages the first word address can remain the
Start Address (in which case the next Page is programmed) or can be any address in
the same block. If any address with data FFFFh is given that is not in the same block as
the Start Address, the device enters the Exit Phase. For the first Load Phase Status
Register bit SR7 should be read after the first word has been issued to check that the
command has been accepted (bit SR7 set to ‘0’). This check is not required for
subsequent Load Phases.
2.
Each subsequent word to be programmed is latched with a new Bus Write operation.
The address is only checked for the first word of each Page as the order of the words to
be programmed is fixed.
The memory is now set to enter the Program and Verify Phase.
35/123
Command interface - Factory program commands
6.4.3
M58WRxxxKU, M58WRxxxKL
Program and Verify Phase
In the Program and Verify Phase the four words that were loaded in the Load Phase are
programmed in the memory array and then verified by the Program/Erase Controller. If any
errors are found the Program/Erase Controller reprograms the location. During this phase
the Status Register shows that the Program/Erase Controller is busy, Status Register bit
SR7 set to ‘0’, and that the device is not waiting for new data, Status Register bit SR0 set to
‘1’. When Status Register bit SR0 is set to ‘0’ the Program and Verify phase has terminated.
Once the Verify Phase has successfully completed subsequent pages in the same block can
be loaded and programmed. The device returns to the beginning of the Load Phase by
issuing one Bus Write operation to latch the Address and the first of the four new words to
be programmed.
6.4.4
Exit Phase
Finally, after all the pages have been programmed, write one Bus Write operation with data
FFFFh to any address outside the block containing the Start Address, to terminate the Load
and Program and Verify Phases.
Status Register bit SR7 set to ‘1’ and bit SR0 set to ‘0’ indicate that the Quadruple
Enhanced Factory Program command has terminated. A full Status Register check should
be done to ensure that the block has been successfully programmed. See the section on the
Status Register for more details.
If the Program and Verify Phase has successfully completed the memory returns to Read
mode. If the P/E.C. fails to program and reprogram a given location, the error will be
signaled in the Status Register.
36/123
M58WRxxxKU, M58WRxxxKL
Table 9.
Command interface - Factory program commands
Factory Program commands (1)
Command
Phase
Cycles
Bus Write operations
1st
2nd
3rd
Final -1
Add
Data
Add
Data
Add
Data
Final
Add
Data
Add
Data
WA3
PD3
WA4
PD4
Double Word Program(2)
3
BKA or
WA1(3)
35h
WA1
PD1
WA2
PD2
Quadruple Word
Program(4)
5
BKA or
WA1(3)
56h
WA1
PD1
WA2
PD2
2+n BKA or
(3)
+1 WA1
30h
BA or
D0h WA1(7) PD1
WA1(6)
WAn(8) PAn
NOT
FFFF
h
WA1(7))
n+1 WA1(7)
PD1
WA2(8) PD2 WA3(8) PD3
WAn(8) PAn
NOT
FFFF
h
WA1(7)
BKA or
WA1(3)
75h
WA1(7) PD1 WA2(9) PD2
WA3(9) PD3 WA4(9)
PD4
WA4i(9)
PD4i
Setup,
Enhanced Program
Factory
Program (5) Verify, Exit
Setup,
first Load
First
Program &
Quadruple Verify
Enhanced
Subsequent
Factory
Loads
Program
(4)(5)
5
Automatic
4
WA1i(7)
PD1i
WA2i
(9)
Subsequent
Program &
Verify
Exit
PD2i
WA3i
(9)
PD3i
Automatic
1
NOT
WA1(7)
FFFFh
1. WA = Word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address.
2. Word Addresses 1 and 2 must be consecutive Addresses differing only for A0.
3. Any address within the bank can be used.
4. Word Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
5. A Bus Read must be done between each Write cycle where the data is programmed or verified to read the Status Register
and check that the memory is ready to accept the next data. n = number of words, i = number of Pages to be programmed.
6. Any address within the block can be used.
7. WA1 is the Start Address. NOT WA1 is any address that is not in the same block as WA1.
8. Address can remain Starting Address WA1 or be incremented.
9. Address is only checked for the first word of each Page as the order to program the words in each page is fixed so
subsequent words in each Page can be written to any address.
37/123
Status Register
7
M58WRxxxKU, M58WRxxxKL
Status Register
The Status Register provides information on the current or previous Program or Erase
operations. Issue a Read Status Register command to read the contents of the Status
Register, refer to Read Status Register Command section for more details. To output the
contents, the Status Register is latched and updated on the falling edge of the Chip Enable
or Output Enable signals and can be read until Chip Enable or Output Enable returns to VIH.
The Status Register can only be read using single asynchronous or single synchronous
reads. Bus Read operations from any address within the bank, always read the Status
Register during Program and Erase operations.
The various bits convey information about the status and any errors of the operation. Bits
SR7, SR6, SR2 and SR0 give information on the status of the device and are set and reset
by the device. Bits SR5, SR4, SR3 and SR1 give information on errors, they are set by the
device but must be reset by issuing a Clear Status Register command or a hardware reset.
If an error bit is set to ‘1’ the Status Register should be reset before issuing another
command. SR7 to SR1 refer to the status of the device while SR0 refers to the status of the
addressed bank.
The bits in the Status Register are summarized in Table 10: Status Register bits. Refer to
Table 10 in conjunction with the following text descriptions.
7.1
Program/Erase Controller Status bit (SR7)
The Program/Erase Controller Status bit indicates whether the Program/Erase Controller is
active or inactive in any bank. When the Program/Erase Controller Status bit is Low (set to
‘0’), the Program/Erase Controller is active; when the bit is High (set to ‘1’), the
Program/Erase Controller is inactive, and the device is ready to process a new command.
The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend
command is issued until the Program/Erase Controller pauses. After the Program/Erase
Controller pauses the bit is High.
During Program, Erase, operations the Program/Erase Controller Status bit can be polled to
find the end of the operation. Other bits in the Status Register should not be tested until the
Program/Erase Controller completes the operation and the bit is High.
After the Program/Erase Controller completes its operation the Erase Status, Program
Status, VPP Status and Block Lock Status bits should be tested for errors.
7.2
Erase Suspend Status bit (SR6)
The Erase Suspend Status bit indicates that an Erase operation has been suspended or is
going to be suspended in the addressed block. When the Erase Suspend Status bit is High
(set to ‘1’), a Program/Erase Suspend command has been issued and the memory is
waiting for a Program/Erase Resume command.
The Erase Suspend Status should only be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Controller inactive). SR7 is set within the Erase
Suspend Latency time of the Program/Erase Suspend command being issued therefore the
memory may still complete the operation rather than entering the Suspend mode.
When a Program/Erase Resume command is issued the Erase Suspend Status bit returns
Low.
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M58WRxxxKU, M58WRxxxKL
7.3
Status Register
Erase Status bit (SR5)
The Erase Status bit can be used to identify if the memory has failed to verify that the block
has erased correctly. When the Erase Status bit is High (set to ‘1’), the Program/Erase
Controller has applied the maximum number of pulses to the block and still failed to verify
that it has erased correctly. The Erase Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Controller inactive).
Once set High, the Erase Status bit can only be reset Low by a Clear Status Register
command or a hardware reset. If set High it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
7.4
Program Status bit (SR4)
The Program Status bit is used to identify either a Program failure, or an attempt to program
a ‘1’ to an already programmed bit when VPP = VPPH.
When the Program Status bit goes High (set to ‘1’) after a Program failure, the
Program/Erase Controller has applied the maximum number of pulses to the byte and still
failed to verify that it has programmed correctly.
After an attempt to program a ‘1’ to an already programmed bit, the Program Status bit SR4
only goes High (set to ’1’) if VPP = VPPH (if VPP ≠ VPPH, SR4 remains Low (set to ‘0’) and the
attempt is not shown).
The Program Status bit should be read once the Program/Erase Controller Status bit is High
(Program/Erase Controller inactive).
Once set High, the Program Status bit can only be reset Low by a Clear Status Register
command or a hardware reset. If set High it should be reset before a new command is
issued, otherwise the new command will appear to fail.
7.5
VPP Status bit (SR3)
The VPP Status bit can be used to identify an invalid voltage on the VPP pin during Program
and Erase operations. The VPP pin is only sampled at the beginning of a Program or Erase
operation. Indeterminate results can occur if VPP becomes invalid during an operation.
When the VPP Status bit is Low (set to ‘0’), the voltage on the VPP pin was sampled at a valid
voltage; when the VPP Status bit is High (set to ‘1’), the VPP pin has a voltage that is below
the VPP Lockout Voltage, VPPLK, the memory is protected and Program and Erase
operations cannot be performed.
Once set High, the VPP Status bit can only be reset Low by a Clear Status Register
command or a hardware reset. If set High it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
39/123
Status Register
7.6
M58WRxxxKU, M58WRxxxKL
Program Suspend Status bit (SR2)
The Program Suspend Status bit indicates that a Program operation has been suspended in
the addressed block. When the Program Suspend Status bit is High (set to ‘1’), a
Program/Erase Suspend command has been issued and the memory is waiting for a
Program/Erase Resume command. The Program Suspend Status should only be
considered valid when the Program/Erase Controller Status bit is High (Program/Erase
Controller inactive). SR2 is set within the Program Suspend Latency time of the
Program/Erase Suspend command being issued therefore the memory may still complete
the operation rather than entering the Suspend mode.
When a Program/Erase Resume command is issued the Program Suspend Status bit
returns Low.
7.7
Block Protection Status bit (SR1)
The Block Protection Status bit can be used to identify if a Program or Block Erase operation
has tried to modify the contents of a locked block.
When the Block Protection Status bit is High (set to ‘1’), a Program or Erase operation has
been attempted on a locked block.
Once set High, the Block Protection Status bit can only be reset Low by a Clear Status
Register command or a hardware reset. If set High it should be reset before a new
command is issued, otherwise the new command will appear to fail.
7.8
Bank Write/Multiple Word Program Status bit (SR0)
The Bank Write Status bit indicates whether the addressed bank is programming or erasing.
In Enhanced Factory Program mode the Multiple Word Program bit shows if a word has
finished programming or verifying depending on the phase. The Bank Write Status bit
should only be considered valid when the Program/Erase Controller Status SR7 is Low (set
to ‘0’).
When both the Program/Erase Controller Status bit and the Bank Write Status bit are Low
(set to ‘0’), the addressed bank is executing a Program or Erase operation. When the
Program/Erase Controller Status bit is Low (set to ‘0’) and the Bank Write Status bit is High
(set to ‘1’), a Program or Erase operation is being executed in a bank other than the one
being addressed.
In Enhanced Factory Program mode if Multiple Word Program Status bit is Low (set to ‘0’),
the device is ready for the next word, if the Multiple Word Program Status bit is High (set to
‘1’) the device is not ready for the next word.
Note:
40/123
Refer to Appendix C: Flowcharts and pseudocodes, for using the Status Register.
M58WRxxxKU, M58WRxxxKL
Table 10.
Bit
Status Register bits
Name
SR7 P/E.C. Status
SR6 Erase Suspend Status
SR5 Erase Status
SR4 Program Status
SR3 VPP Status
Type
Logic Level
Definition
(1)
'1'
Ready
'0'
Busy
'1'
Erase Suspended
'0'
Erase In progress or Completed
'1'
Erase Error
'0'
Erase Success
'1'
Program Error
'0'
Program Success
'1'
VPP Invalid, Abort
'0'
VPP OK
'1'
Program Suspended
'0'
Program In Progress or Completed
'1'
Program/Erase on protected Block, Abort
'0'
No operation to protected blocks
Status
Status
Error
Error
Error
Program Suspend
Status
Status
SR1 Block Protection Status
Error
SR2
Status Register
SR7 = ‘1’ Not Allowed
'1'
SR7 = ‘0’
Bank Write Status
Status
Program or erase operation in a bank other than
the addressed bank
SR7 = ‘1’ No Program or erase operation in the device
'0'
SR7 = ‘0’ Program or erase operation in addressed bank
SR0
SR7 = ‘1’ Not Allowed
Multiple Word Program
Status (Enhanced
Factory Program mode)
'1'
SR7 = ‘0’ the device is NOT ready for the next word
Status
SR7 = ‘1’ the device is exiting from EFP
'0'
SR7 = ‘0’
the device is ready for the next word
1. Logic level '1' is High, '0' is Low.
41/123
Configuration Register
8
M58WRxxxKU, M58WRxxxKL
Configuration Register
The Configuration Register is used to configure the type of bus access that the memory will
perform. Refer to Read Modes section for details on read operations.
The Configuration Register is set through the Command Interface. After a Reset or PowerUp the device is configured for asynchronous read (CR15 = 1). The Configuration Register
bits are described in Table 12 They specify the selection of the burst length, burst type, burst
X latency and the Read operation. Refer to Figures 7 and 8 for examples of synchronous
burst configurations.
8.1
Read Select bit (CR15)
The Read Select bit, CR15, is used to switch between asynchronous and synchronous Bus
Read operations. When the Read Select bit is set to ’1’, read operations are asynchronous;
when the Read Select bit is set to ’0’, read operations are synchronous. Synchronous Burst
Read is supported in both parameter and main blocks and can be performed across banks.
On reset or power-up the Read Select bit is set to’1’ for asynchronous access.
8.2
Bus Invert Configuration (CR14)
The Bus Invert Configuration bit is used to enable the BINV functionality. When the
functionality is enabled, if the BINV pin operates as an input pin (during write bus
operations), the BINV signal must always be driven; if it operates as an output pin (during
read bus operations), the functionality is valid only during synchronous read operations.
42/123
M58WRxxxKU, M58WRxxxKL
8.3
Configuration Register
X-Latency bits (CR13-CR11)
The X-Latency bits are used during Synchronous Read operations to set the number of
clock cycles between the address being latched and the first data becoming available. Refer
to Figure 7: X-latency and data output configuration example.
For correct operation the X-Latency bits can only assume the values in Table 12:
Configuration Register.
Table 11 shows how to set the X-Latency parameter, taking into account the speed class of
the device and the Frequency used to read the Flash memory in Synchronous mode.
Table 11.
8.4
X-latency settings
fmax
tKmin
X-Latency min
30 MHz
33 ns
2
40 MHz
25 ns
3
54 MHz
19 ns
4
66 MHz
15 ns
4
86 MHz
12 ns
5
Wait Polarity bit (CR10)
In synchronous burst mode the Wait signal indicates whether the output data are valid or a
WAIT state must be inserted. The Wait Polarity bit is used to set the polarity of the Wait
signal. When the Wait Polarity bit is set to ‘0’ the Wait signal is active Low. When the Wait
Polarity bit is set to ‘1’ the Wait signal is active High.
8.5
Data Output Configuration bit (CR9)
The Data Output Configuration bit determines whether the output remains valid for one or
two clock cycles. When the Data Output Configuration bit is ’0’ the output data is valid for
one clock cycle, when the Data Output Configuration bit is ’1’ the output data is valid for two
clock cycles.
The Data Output Configuration depends on the condition:
●
tK > tKQV + tQVK_CPU
where tK is the clock period, tQVK_CPU is the data setup time required by the system CPU
and tKQV is the clock to data valid time. If this condition is not satisfied, the Data Output
Configuration bit should be set to ‘1’ (two clock cycles). Refer to Figure 7: X-latency and
data output configuration example.
8.6
Wait Configuration bit (CR8)
In burst mode the Wait bit controls the timing of the Wait output pin, WAIT. When WAIT is
asserted, Data is Not Valid and when WAIT is deasserted, Data is Valid.
When the Wait bit is ’0’ the Wait output pin is asserted during the wait state. When the Wait
bit is ’1’ the Wait output pin is asserted one clock cycle before the wait state.
43/123
Configuration Register
8.7
M58WRxxxKU, M58WRxxxKL
Burst Type bit (CR7)
The Burst Type bit is used to configure the sequence of addresses read as sequential or
interleaved. When the Burst Type bit is ’0’ the memory outputs from interleaved addresses;
when the Burst Type bit is ’1’ the memory outputs from sequential addresses. See Table 13:
Burst type definition, for the sequence of addresses output from a given starting address in
each mode.
8.8
Valid Clock Edge bit (CR6)
The Valid Clock Edge bit, CR6, is used to configure the active edge of the Clock, K, during
Synchronous Burst Read operations. When the Valid Clock Edge bit is ’0’ the falling edge of
the Clock is the active edge; when the Valid Clock Edge bit is ’1’ the rising edge of the Clock
is active.
8.9
Power-Down bit (CR5)
The Power-Down bit is used to enable or disable the Power-Down function. When it is set to
‘0’ the Power-Down function is disabled. If the Reset/Power-Down, RP, pin goes Low (VIL),
the device is reset and the supply current IDD is reduced to the Standby value IDD3. When
the Power-Down bit is set to ‘1’ the Power-Down function is enabled. If the Reset/PowerDown, RP, pin goes Low (VIL) the device switches to the Power-Down state and the supply
current IDD is reduced to the Reset/Power-Down value, IDD2.
The recovery time after a Reset/Power-Down, RP, pulse is significantly longer when PowerDown is enabled (see Table 28: Reset and Power-up ac characteristics).
8.10
Wrap Burst bit (CR3)
The burst reads can be confined inside the 4, 8 or 16 word boundary (wrap) or overcome the
boundary (no wrap). The Wrap Burst bit is used to select between wrap and no wrap. When
the Wrap Burst bit is set to ‘0’ the burst read wraps; when it is set to ‘1’ the burst read does
not wrap.
44/123
M58WRxxxKU, M58WRxxxKL
8.11
Configuration Register
Burst length bits (CR2-CR0)
The Burst Length bits set the number of words to be output during a Synchronous Burst
Read operation as result of a single address latch cycle. They can be set for 4 words, 8
words, 16 words or continuous burst, where all the words are read sequentially.
In continuous burst mode the burst sequence can cross bank boundaries.
In continuous burst mode or in 4, 8, 16 words no-wrap, depending on the starting address,
the device asserts the WAIT output to indicate that a delay is necessary before the data is
output.
If the starting address is aligned to a 4 word boundary no wait states are needed and the
WAIT output is not asserted.
If the starting address is shifted by 1, 2 or 3 positions from the four word boundary, WAIT will
be asserted for 1, 2 or 3 clock cycles when the burst sequence crosses the first 16 word
boundary, to indicate that the device needs an internal delay to read the successive words in
the array. WAIT will be asserted only once during a continuous burst access. See also
Table 13: Burst type definition.
CR4 is reserved for future use.
45/123
Configuration Register
Table 12.
M58WRxxxKU, M58WRxxxKL
Configuration Register
Bit
CR15
CR14
CR13-CR11
Description
Value
Description
0
Synchronous Read
1
Asynchronous Read (Default at power-on)
0
BINV (power save) disabled (default)
1
BINV (power save) enabled
010
2 clock latency
011
3 clock latency
100
4 clock latency
101
5 clock latency
111
Reserved (default)
Read Select
Bus invert
configuration
X-Latency
Other configurations reserved
CR10
CR9
CR8
CR7
CR6
CR5
46/123
Data Output
Configuration
WAIT is active Low (default)
1
WAIT is active High
0
Data held for one clock cycle
1
Data held for two clock cycles (default)
0
WAIT is active during wait state (default)
1
WAIT is active one data cycle before wait state
0
Interleaved
1
Sequential (default)
0
Falling Clock edge
1
Rising Clock edge (default)
0
Power-Down disabled (default)
1
Power-Down enabled
0
Wrap
1
No Wrap (default)
001
4 words
010
8 words
011
16 words
111
Continuous (CR7 must be set to ‘1’) (default)
Wait Configuration
Burst Type
Valid Clock Edge
Power-Down
Configuration
CR4
Reserved
CR3
Wrap Burst
CR2-CR0
0
Wait Polarity
Burst Length
M58WRxxxKU, M58WRxxxKL
Mode
Table 13.
Burst type definition
4 words
Start
Add
Configuration Register
Sequential
8 words
InterSequential Interleaved
leaved
16 words
Sequential
Interleaved
Continuous
Burst
0
0-1-2-3
0-1-2-3
0-1-2-3-45-6-7
0-1-2-3-4-5-6-7-80-1-2-3-4-59-10-11-12-13-146-7
15
0-1-2-3-4-5-67-8-9-10-1112-13-14-15
0-1-2-3-4-5-6...
1
1-2-3-0
1-0-3-2
1-2-3-4-56-7-0
1-0-3-2-5-47-6
1-2-3-4-5-6-7-8-910-11-12-13-1415-0
1-0-3-2-5-4-76-9-8-11-1013-12-15-14
1-2-3-4-5-6-7...15-WAIT-1617-18...
2
2-3-0-1
2-3-0-1
2-3-4-5-67-0-1
2-3-0-1-6-74-5
2-3-4-5-6-7-8-910-11-12-13-1415-0-1
3-2-1-0
3-4-5-6-70-1-2
3-4-5-6-7-8-9-103-2-1-0-7-611-12-13-14-15-05-4
1-2
7-6-5-4
7-0-1-2-34-5-6
7-8-9-10-11-12-13- 7-6-5-4-3-2-17-6-5-4-3-214-15-0-1-2-3-4-5- 0-15-14-131-0
6
12-11-10-9-8
3
3-0-1-2
2-3-0-1-6-7-4- 2-3-4-5-6-7...155-10-11-8-9WAIT-WAIT-1614-15-12-13
17-18...
3-2-1-0-7-6-54-11-10-9-815-14-13-12
3-4-5-6-7...15WAIT-WAITWAIT-16-1718...
Wrap
...
7
7-4-5-6
7-8-9-10-11-1213-14-15-WAITWAIT-WAIT-1617...
...
12
12-13-14-15-1617-18...
13
13-14-15-WAIT16-17-18...
14
14-15-WAITWAIT-16-1718....
15
15-WAIT-WAITWAIT-16-1718...
47/123
Configuration Register
Mode
Table 13.
Burst type definition (continued)
4 words
Start
Add
M58WRxxxKU, M58WRxxxKL
Sequential
8 words
InterSequential Interleaved
leaved
16 words
Sequential
0
0-1-2-3
0-1-2-3-45-6-7
0-1-2-3-4-5-6-7-89-10-11-12-13-1415
1
1-2-3-4
1-2-3-4-56-7-8
1-2-3-4-5-6-7-8-910-11-12-13-1415-WAIT-16
2-3-4-5
2-3-4-5-67-8-9...
2-3-4-5-6-7-8-910-11-12-13-1415-WAIT-WAIT-1617
3-4-5-6
3-4-5-6-78-9-10
3-4-5-6-7-8-9-1011-12-13-14-15WAIT-WAIT-WAIT16-17-18
7-8-9-10
7-8-9-1011-12-1314
7-8-9-10-11-12-1314-15-WAIT-WAITWAIT-16-17-18-1920-21-22
12
12-13-1415
12-13-1415-16-1718-19
12-13-14-15-1617-18-19-20-2122-23-24-25-26-27
13
13-14-15WAIT-16
13-14-15WAIT-1617-18-1920
13-14-15-WAIT-1617-18-19-20-2122-23-24-25-2627-28
14
14-15WAITWAIT-1617
14-15WAITWAIT-1617-18-1920-21
14-15-WAIT-WAIT16-17-18-19-2021-22-23-24-2526-27-28-29
15
15-WAITWAITWAIT-1617-18
15-WAITWAITWAIT-1617-18-1920-21-22
15-WAIT-WAITWAIT-16-17-18-1920-21-22-23-2425-26-27-28-29-30
2
3
Interleaved
Continuous
Burst
No-wrap
...
48/123
7
...
Same as for
Wrap
(Wrap /No Wrap
has no effect on
Continuous
Burst)
M58WRxxxKU, M58WRxxxKL
Figure 7.
Configuration Register
X-latency and data output configuration example
X-latency
1st cycle
2nd cycle
3rd cycle
4th cycle
K
E
L
A16-Amax(1)
VALID ADDRESS
tQVK_CPU
tK
tKQV
ADQ15-ADQ0
VALID ADDRESS
VALID DATA VALID DATA
AI13522
1. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
2. Settings shown: X-latency = 4, Data Output held for one clock cycle.
49/123
Configuration Register
Figure 8.
M58WRxxxKU, M58WRxxxKL
Wait configuration example
E
K
L
G
A16-Amax(1)
VALID ADDRESS
ADQ15-ADQ0
VALID ADDRESS
VALID DATA VALID DATA
NOT VALID
VALID DATA
WAIT
CR8 = '0'
CR10 = '0'
WAIT
CR8 = '1'
CR10 = '0'
WAIT
CR8 = '0'
CR10 = '1'
WAIT
CR8 = '1'
CR10 = '1'
AI13523
1. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
50/123
M58WRxxxKU, M58WRxxxKL
9
Read modes
Read modes
Read operations can be performed in two different ways depending on the settings in the
Configuration Register. If the clock signal is ‘don’t care’ for the data output, the read
operation is Asynchronous; if the data output is synchronized with clock, the read operation
is Synchronous.
The Read mode and data output format are determined by the Configuration Register. (See
Configuration Register section for details). All banks supports both asynchronous and
synchronous read operations. The Multiple Bank architecture allows read operations in one
bank, while write operations are being executed in another (see Tables 14 and 15).
9.1
Asynchronous Read mode
In Asynchronous Read operations the clock signal is ‘don’t care’. The device outputs the
data corresponding to the address latched, that is the memory array, Status Register,
Common Flash Interface or Electronic Signature depending on the command issued. CR15
in the Configuration Register must be set to ‘1’ for Asynchronous operations.
In Asynchronous Read mode, the WAIT signal is always deasserted.
The device features an Automatic Standby mode. During asynchronous read operations,
after a bus inactivity of 150 ns, the device automatically switches to the Automatic Standby
mode. In this condition the power consumption is reduced to the standby value IDD4 and the
outputs are still driven.
See Table 24: Asynchronous Read ac characteristics, and Figure 11: Asynchronous random
access read ac waveforms.
51/123
Read modes
9.2
M58WRxxxKU, M58WRxxxKL
Synchronous Burst Read mode
In Synchronous Burst Read mode the data is output in bursts synchronized with the clock. It
is possible to perform burst reads across bank boundaries.
Synchronous Burst Read mode can only be used to read the memory array. For other read
operations, such as Read Status Register, Read CFI and Read Electronic Signature, Single
Synchronous Read or Asynchronous Random Access Read must be used.
In Synchronous Burst Read mode the flow of the data output depends on parameters that
are configured in the Configuration Register.
A burst sequence is started at the first clock edge (rising or falling depending on Valid Clock
Edge bit CR6 in the Configuration Register) after the falling edge of Latch Enable.
Addresses are internally incremented and after a delay of 2 to 5 clock cycles (X latency bits
CR13-CR11) the corresponding data are output on each clock cycle.
The number of words to be output during a Synchronous Burst Read operation can be
configured as 4, 8 or 16 words or Continuous (Burst Length bits CR2-CR0). The data can be
configured to remain valid for one or two clock cycles (Data Output Configuration bit CR9).
The order of the data output can be modified through the Burst Type and the Wrap Burst bits
in the Configuration Register. The burst sequence may be configured to be sequential or
interleaved (CR7). The burst reads can be confined inside the 4, 8 or 16 word boundary
(Wrap) or overcome the boundary (No Wrap). If the starting address is aligned to the Burst
Length (4, 8 or 16 words), the wrapped configuration has no impact on the output sequence.
Interleaved mode is not allowed in Continuous Burst Read mode or with No Wrap
sequences.
A WAIT signal may be asserted to indicate to the system that an output delay will occur. This
delay will depend on the starting address of the burst sequence; the worst case delay will
occur when the sequence is crossing a 16 word boundary and the starting address was at
the end of a four word boundary.
WAIT is asserted during X-latency, the Wait state and at the end of a 4, 8 and 16 word burst.
It is only deasserted when output data are valid or when G is at VIH. In Continuous Burst
Read mode a Wait state will occur when crossing the first 16 word boundary. If the burst
starting address is aligned to a 4 word Page, the Wait state will not occur.
The WAIT signal can be configured to be active Low or active High by setting CR10 in the
Configuration Register.
See Table 25: Synchronous Read ac characteristics, and Figure 12: Synchronous Burst
Read ac waveforms, for details.
52/123
M58WRxxxKU, M58WRxxxKL
9.2.1
Read modes
Synchronous Burst Read Suspend
A Synchronous Burst Read operation can be suspended, freeing the data bus for other
higher priority devices. It can be suspended during the initial access latency time (before
data is output) or after the device has output data. When the Synchronous Burst Read
operation is suspended, internal array sensing continues and any previously latched internal
data is retained. A burst sequence can be suspended and resumed as often as required as
long as the operating conditions of the device are met.
A Synchronous Burst Read operation is suspended when E is low and the current address
has been latched (on a Latch Enable rising edge or on a valid clock edge). The clock signal
is then halted at VIH or at VIL, and G goes high.
When G becomes low again and the clock signal restarts, the Synchronous Burst Read
operation is resumed exactly where it stopped.
WAIT being gated by E remains active and will not revert to high-impedance when G goes
high. So if two or more devices are connected to the system’s READY signal, to prevent bus
contention the WAIT signal of the Flash memory should not be directly connected to the
system’s READY signal.
See Table 25: Synchronous Read ac characteristics, and Figure 14: Synchronous Burst
Read Suspend ac waveforms for details.
9.3
Single Synchronous Read mode
Single Synchronous Read operations are similar to Synchronous Burst Read operations
except that only the first data output after the X latency is valid.
Synchronous Single Reads are used to read the Electronic Signature, Status Register, CFI,
Block Protection Status, Configuration Register Status or Protection Register. When the
addressed bank is in Read CFI, Read Status Register or Read Electronic Signature mode,
the WAIT signal is deasserted when Output Enable, G, is at VIH or for the one clock cycle
during which output data is valid. Otherwise, it is asserted.
See Table 25: Synchronous Read ac characteristics and Figure 13: Single Synchronous
Read ac waveforms, for details.
53/123
Dual operations and multiple bank architecture
10
M58WRxxxKU, M58WRxxxKL
Dual operations and multiple bank architecture
The Multiple Bank Architecture of the M58WRxxxKU/L provides flexibility for software
developers by allowing code and data to be split with 4 Mbit granularity. The Dual
Operations feature simplifies the software management of the device and allows code to be
executed from one bank while another bank is being programmed or erased.
The Dual operations feature means that while programming or erasing in one bank, Read
operations are possible in another bank with zero latency (only one bank at a time is allowed
to be in Program or Erase mode). If a Read operation is required in a bank which is
programming or erasing, the Program or Erase operation can be suspended. Also if the
suspended operation was Erase then a Program command can be issued to another block,
so the device can have one block in Erase Suspend mode, one programming and other
banks in Read mode. Bus Read operations are allowed in another bank between setup and
confirm cycles of program or erase operations. The combination of these features means
that read operations are possible at any moment.
Dual operations between the Parameter Bank and either of the CFI, the OTP or the
Electronic Signature memory space are not allowed. Table 16 shows which dual operations
are allowed or not between the CFI, the OTP, the Electronic Signature locations and the
memory array.
Tables 14 and 15 show the dual operations possible in other banks and in the same bank.
Note that only the commonly used commands are represented in these tables. For a
complete list of possible commands refer to Appendix D: Command interface state tables.
Table 14.
Dual operations allowed in other banks
Commands allowed in another bank
Status of
bank
54/123
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Program/ Program/
Electronic Program Erase
Erase
Erase
Signature
Suspend Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program
Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase
Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
M58WRxxxKU, M58WRxxxKL
Table 15.
Dual operations and multiple bank architecture
Dual operations allowed in same bank
Commands allowed in same bank
Status of
bank
Idle
Programming
Erasing
Read
Array
Read
Status
Register
Read
CFI
Query
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
(1))
Yes
Yes
Yes
–
–
Yes
–
(1)
Yes
Yes
Yes
–
–
Yes
–
–
–
Read
Electronic Program
Signature
Erase
Program/ Program/
Erase
Erase
Suspend Resume
Program
Suspended
Yes(2)
Yes
Yes
Yes
–
–
–
Yes
Erase
Suspended
Yes(2)
Yes
Yes
Yes
Yes(2)
–
–
Yes
1. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase
has completed.
2. Not allowed in the Block or word that is being erased or programmed.
Table 16.
Dual operation limitations
Commands allowed
Read Main Blocks
Read CFI / OTP /
Electronic
Signature
Read
Parameter
Blocks
No
Located in
Parameter
Bank
Not Located
in Parameter
Bank
Current Status
Programming / Erasing
Parameter Blocks
Programming /
Erasing Main
Blocks
Programming OTP
Located in
Parameter
Bank
Not Located
in Parameter
Bank
No
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
In Different
Bank Only
No
No
No
No
55/123
Block locking
11
M58WRxxxKU, M58WRxxxKL
Block locking
The M58WRxxxKU/L features an instant, individual block locking scheme that allows any
block to be locked or unlocked with no latency. This locking scheme has three levels of
protection.
●
Lock/Unlock - this first level allows software-only control of block locking.
●
Lock-Down - this second level requires hardware interaction before locking can be
changed.
●
VPP ≤VPPLK - the third level offers a complete hardware protection against program and
erase on all blocks.
The protection status of each block can be set to Locked, Unlocked, and Lock-Down.
Table 17, defines all of the possible protection states (WP, DQ1, DQ0), and Appendix C:
Flowcharts and pseudocodes, Figure 26, shows a flowchart for the locking operations.
11.1
Reading a block’s lock status
The lock status of every block can be read in the Read Electronic Signature mode of the
device. To enter this mode write 90h to the device. Subsequent reads at the address
specified in Table 8, will output the protection status of that block. The lock status is
represented by DQ0 and DQ1. DQ0 indicates the Block Lock/Unlock status and is set by the
Lock command and cleared by the Unlock command. It is also automatically set when
entering Lock-Down. DQ1 indicates the Lock-Down status and is set by the Lock-Down
command. It cannot be cleared by software, only by a hardware reset or power-down.
The following sections explain the operation of the locking system.
11.2
Locked state
The default status of all blocks on power-up or after a hardware reset is Locked (states
(0,0,1) or (1,0,1)). Locked blocks are fully protected from any program or erase. Any
program or erase operations attempted on a locked block will return an error in the Status
Register. The Status of a Locked block can be changed to Unlocked or Lock-Down using the
appropriate software commands. An Unlocked block can be Locked by issuing the Lock
command.
11.3
Unlocked state
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)), can be programmed or erased. All unlocked
blocks return to the Locked state after a hardware reset or when the device is powereddown. The status of an unlocked block can be changed to Locked or Locked-Down using the
appropriate software commands. A locked block can be unlocked by issuing the Unlock
command.
56/123
M58WRxxxKU, M58WRxxxKL
11.4
Block locking
Lock-Down state
Blocks that are Locked-Down (state (0,1,x))are protected from program and erase
operations (as for Locked blocks) but their protection status cannot be changed using
software commands alone. A Locked or Unlocked block can be Locked-Down by issuing the
Lock-Down command. Locked-Down blocks revert to the Locked state when the device is
reset or powered-down.
The Lock-Down function is dependent on the WP input pin. When WP=0 (VIL), the blocks in
the Lock-Down state (0,1,x) are protected from program, erase and protection status
changes. When WP=1 (VIH) the Lock-Down function is disabled (1,1,x) and Locked-Down
blocks can be individually unlocked to the (1,1,0) state by issuing the software command,
where they can be erased and programmed. These blocks can then be re-locked (1,1,1) and
unlocked (1,1,0) as desired while WP remains high. When WP is Low, blocks that were
previously Locked-Down return to the Lock-Down state (0,1,x) regardless of any changes
made while WP was high. Device reset or power-down resets all blocks, including those in
Lock-Down, to the Locked state.
11.5
Locking operations during Erase Suspend
Changes to block lock status can be performed during an erase suspend by using the
standard locking command sequences to unlock, lock or lock-down a block. This is useful in
the case when another block needs to be updated while an erase operation is in progress.
To change block locking during an erase operation, first write the Erase Suspend command,
then check the status register until it indicates that the erase operation has been
suspended. Next write the desired Lock command sequence to a block and the lock status
will be changed. After completing any desired lock, read, or program operations, resume the
erase operation with the Erase Resume command.
If a block is locked or locked-down during an erase suspend of the same block, the locking
status bits will be changed immediately, but when the erase is resumed, the erase operation
will complete. Locking operations cannot be performed during a program suspend. Refer to
Appendix D: Command interface state tables, for detailed information on which commands
are valid during erase suspend.
57/123
Block locking
M58WRxxxKU, M58WRxxxKL
Table 17.
Lock status
Current Protection Status(1)
(WP, ADQ1, ADQ0)
Current
State
1,0,0
Next Protection status(1) (WP, ADQ1, ADQ0)
Program/Erase After Block Lock
Allowed
Command
After Block
Unlock
Command
After Block
Lock-Down
Command
After WP
transition
yes
1,0,1
1,0,0
1,1,1
0,0,0
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
no
0,0,1
0,0,0
0,1,1
1,0,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0(3)
1,0,1
0,0,1
(2)
(2)
0,1,1
1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for
a locked block) as read in the Read Electronic Signature command with A1 = VIH and A0 = VIL.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110.
58/123
M58WRxxxKU, M58WRxxxKL
12
Program and erase times and endurance cycles
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 18 In the M58WRxxxKU/L the maximum number of Program/ Erase cycles
depends on the voltage supply used.
Program, erase times and endurance cycles(1)
Table 18.
Parameter
VPP = VDD
Erase
Program(3)
Suspend Latency
Condition
Typical
after 100k Max
W/E Cycles
Unit
0.3
1
2.5
s
Main Block (32 Preprogrammed
Kword)
Not Preprogrammed
0.8
3
4
s
4
s
Word
12
100
µs
Parameter Block (4 Kword)
40
ms
Main Block (32 Kword)
300
ms
1
12
Program
5
10
µs
Erase
5
20
µs
Parameter Block (4 Kword)
Main Block (32 Kword)
Word/ Double Word/ Quadruple
Word(4)
Quad-Enhanced Factory
(3)
Program
cycles
100,000
cycles
0.25
2.5
s
0.8
4
s
10
100
µs
ms
45
ms
10
ms
Word
40
ms
Quad-Enhanced Factory
94
ms
360
ms
80
ms
328
ms
0.75
s
0.65
s
Main Block (32 Enhanced Factory
Kword)
Quadruple Word(4)
Word
Bank (4Mbit)
100,000
11
Enhanced Factory
Parameter
Block (4 Kword) Quadruple Word(4)
VPP = VPPH
Typ
Parameter Block (4 Kword)(2)
Main Blocks
Program/Erase
Cycles (per Block) Parameter Blocks
Erase
Min
Quad-Enhanced
Quadruple
Factory(4)
Word(4)
Main Blocks
Program/Erase
Cycles (per Block) Parameter Blocks
1000 cycles
2500 cycles
1. TA = –40 to 85°C; VDD = VDDQ = 1.7 V to 2 V.
2. The difference between preprogrammed and not preprogrammed is not significant (‹30 ms).
3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
4. Measurements performed at 25°C. TA = 30°C ±10°C for Quadruple Word, Double Word and Quadruple Enhanced Factory
Program.
59/123
Maximum rating
13
M58WRxxxKU, M58WRxxxKL
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 19.
Absolute maximum ratings
Value
Symbol
Unit
Min
Max
Ambient operating temperature
–40
85
°C
TBIAS
Temperature under bias
–40
125
°C
TSTG
Storage temperature
–65
155
°C
VIO
Input or output voltage
–0.5
VDDQ+0.6
V
VDD
Supply voltage
–0.2
2.45
V
Input/output supply voltage
–0.2
2.45
V
Program voltage
–0.2
10.0
V
Output short circuit current
100
mA
Time for VPP at VPPH
100
hours
TA
VDDQ
VPP
IO
tVPPH
60/123
Parameter
M58WRxxxKU, M58WRxxxKL
14
DC and AC parameters
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 20: Operating and ac measurement conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 20.
Operating and ac measurement conditions
M58WRxxxKU/L
Parameter
60 ns
70 ns
Unit
Min
Max
Min
Max
VDD supply voltage
1.7
2
1.7
2
V
VDDQ supply voltage
1.7
2
1.7
2
V
VPP supply voltage (factory environment)
8.5
9.5
8.5
9.5
V
VPP supply voltage (application environment)
–0.4
VDDQ+0.4
–0.4
VDDQ+0.4
V
Ambient operating temperature
–40
85
–40
85
°C
Load capacitance (CL)
30
Input rise and fall times
5
Input pulse voltages
Input and output timing ref. voltages
Figure 9.
30
pF
5
ns
0 to VDDQ
0 to VDDQ
V
VDDQ/2
VDDQ/2
V
AC measurement I/O waveform
VDDQ
VDDQ/2
0V
AI06161
61/123
DC and AC parameters
M58WRxxxKU, M58WRxxxKL
Figure 10. AC measurement load circuit
VDDQ
VDDQ
VDD
16.7kΩ
DEVICE
UNDER
TEST
CL
0.1µF
16.7kΩ
0.1µF
CL includes JIG capacitance
Table 21.
Symbol
CIN
COUT
Capacitance(1)
Parameter
Input capacitance
Output capacitance
1. Sampled only, not 100% tested.
62/123
AI06162
Test condition
Min
Max
Unit
VIN = 0 V
6
8
pF
VOUT = 0 V
8
12
pF
M58WRxxxKU, M58WRxxxKL
Table 22.
Symbol
DC and AC parameters
DC characteristics - currents
Parameter
Test condition
ILI
Input leakage current
ILO
Max
Unit
0V ≤VIN ≤VDDQ
±1
µA
Output leakage current
0V ≤VOUT ≤VDDQ
±1
µA
Supply current
Asynchronous Read (f=6 MHz)
E = VIL, G = VIH
10
20
mA
4 word
18
20
mA
8 word
20
22
mA
16 word
22
24
mA
Continuous
24
26
mA
4 word
22
25
mA
8 word
25
27
mA
16 word
30
32
mA
Continuous
33
35
mA
Supply current
Synchronous Read (f=66 MHz)
IDD1
Supply current
Synchronous Read (f=86 MHz)
Min
Typ
IDD2
Supply current
(Reset/Power-Down)
RP = VSS ± 0.2 V
2
10
µA
IDD3
Supply current (Standby)
E = VDDQ ± 0.2 V,
K = VSS
15
50
µA
IDD4
Supply current (Automatic
Standby)
E = VIL, G = VIH
15
50
µA
VPP = VPPH
10
30
mA
VPP = VDD
20
34
mA
VPP = VPPH
10
30
mA
VPP = VDD
20
34
mA
Program/Erase in one
Bank, Asynchronous Read
in another Bank
30
54
mA
Program/Erase in one
Bank, Synchronous Read
(continuous burst 66 MHz)
in another Bank
44
60
mA
E = VDDQ ± 0.2 V,
K = VSS
15
50
µA
VPP = VPPH
5
10
mA
VPP = VDD
0.2
5
µA
VPP = VPPH
5
10
mA
VPP = VDD
0.2
5
µA
VPP = VPPH
100
400
µA
VPP ≤VDD
0.2
5
µA
VPP ≤VDD
0.2
5
µA
Supply current (Program)
IDD5(1)
Supply current (Erase)
IDD6(1)(2)
IDD7(1)
Supply current
(Dual operations)
Supply current Program/ Erase
Suspended (Standby)
VPP supply current (Program)
IPP1(1)
VPP supply current (Erase)
IPP2
IPP3(1)
VPP supply current (Read)
VPP supply current (Standby)
1. Sampled only, not 100% tested.
2. VDD Dual operation current is the sum of read and program or erase currents.
63/123
DC and AC parameters
Table 23.
Symbol
DC characteristics - voltages
Parameter
Test condition
Min
Typ
Max
Unit
VIL
Input low voltage
–0.5
0.4
V
VIH
Input high voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output low voltage
IOL = 100 µA
0.1
V
VOH
Output high voltage
IOH = –100 µA
VDDQ –0.1
VPP1
VPP program voltage-logic
Program, Erase
1.3
Program, Erase
8.5
VPPH
64/123
M58WRxxxKU, M58WRxxxKL
VPP program voltage factory
VPPLK
Program or Erase lockout
VLKO
VDD lock voltage
V
9
2.4
V
9.5
V
0.4
V
1
V
Hi-Z
tELTV
tELQV
tLLQV
Valid Address Latch
tELLH
tLLLH
Outputs Enabled
tGLQX
tGLQV
tLHGL
tLHAX
Data Valid
tAVAV
VALID DATA
tEHTZ
tGHQZ
tGHQX
tEHQX
tEHQZ
Standby
Notes: 1- WAIT is active Low.
2- Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
WAIT(2)
G
E
L
VALID ADDRESS
A16-Amax(1)
tAVLH
VALID ADDRESS
ADQ0-ADQ15
tAVQV
AI13524
VALID
Hi-Z
M58WRxxxKU, M58WRxxxKL
DC and AC parameters
Figure 11. Asynchronous random access read ac waveforms
65/123
DC and AC parameters
Table 24.
M58WRxxxKU, M58WRxxxKL
Asynchronous Read ac characteristics
M58WRxxxKU/L
Symbol
Alt
70
tRC
Address Valid to Next Address Valid
Min
60
70
ns
tAVQV
tACC
Address Valid to Output Valid
(Random)
Max
60
70
ns
Chip Enable Low to Wait Valid
Max
9
11
ns
Chip Enable Low to Output Valid
Max
60
70
ns
Chip Enable High to Wait Hi-Z
Max
11
14
ns
tELQV(1)
Read Timings
Unit
60
tAVAV
tELTV
Latch Timings
Parameter
tCE
tEHTZ
tEHQX(2)
tOH
Chip Enable High to Output Transition
Min
0
0
ns
(2)
tHZ
Chip Enable High to Output Hi-Z
Max
11
14
ns
tGLQV(1)
tOE
Output Enable Low to Output Valid
Max
20
20
ns
tGLQX(2)
tOLZ
Output Enable Low to Output
Transition
Min
0
0
ns
tGHQX(2)
tOH
Output Enable High to Output
Transition
Min
0
0
ns
tGHQZ(2)
tDF
Output Enable High to Output Hi-Z
Max
11
14
ns
tAVLH
tAVADVH
Address Valid to Latch Enable High
Min
4
7
ns
tELLH
tELADVH
Chip Enable Low to Latch Enable High
Min
9
10
ns
tLHAX
tADVHAX
Latch Enable High to Address
Transition
Min
4
7
ns
Min
7
7
ns
tEHQZ
tLLLH
tADVLADVH Latch Enable Pulse Width
tLLQV
tADVLQV
Latch Enable Low to Output Valid
(Random)
Max
60
70
ns
tLHGL
tADVHGL
Latch Enable High to Output Enable
Low
Min
4
5
ns
1. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
2. Sampled only, not 100% tested.
66/123
Hi-Z
tELKH
tLLLH
Address
Latch
tELTV
tKHAX
tAVKH
tLLKH
tAVLH
VALID ADDRESS
X Latency
tGLTV
tGLQX
Note 2
tKHTV
tGLQV
Note 1
tKHQV
Valid Data Flow
Note 2
tKHTX
tKHQX
VALID
VALID
Boundary
Crossing
Note 2
NOT VALID
NOT VALID
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Configuration Register.
2. The WAIT signal can be configured to be active during wait state or one cycle before. WAIT signal is active Low.
3. Address latched and data output on the rising clock edge.
4. The BINV signal has the waveform shown only if it has been enabled with the Configuration Register. If it is disabled, it remains low.
5. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
WAIT
G
E
K
L
A16-Amax(5)
VALID
VALID
ADQ0-ADQ15
VALID ADDRESS
VALID
BINV(4)
Data
Valid
tGHQZ
tGHQX
AI13525
Standby
tEHTZ
tEHQZ
tEHQX
tEHEL
VALID
VALID
M58WRxxxKU, M58WRxxxKL
DC and AC parameters
Figure 12. Synchronous Burst Read ac waveforms
67/123
68/123
tELKH
Hi-Z
tELTV
tKHAX
tAVKH
tLLKH
tLLLH
tGLTV
tGLQV
tGLQX
Note 1
tKHTV
tKHQV
VALID
NOT VALID
NOT VALID
NOT VALID
NOT VALID
NOT VALID
NOT VALID
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Configuration Register.
2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low.
3. Address latched and data output on the rising clock edge.
4. The BINV signal has the shown waveform only if it has been enabled with the Configuration Register. When disabled, it remains Low.
5. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
WAIT(2)
G
E
K(3)
L
VALID ADDRESS
A16-Amax(5)
tAVLH
VALID ADDRESS
ADQ0-ADQ15
BINV(4)
tGHTV
NOT VALID
NOT VALID
tGHQZ
tGHQX
tEHEL
tEHQZ
tEHQX
NOT VALID
NOT VALID
AI13526
tEHTZ
DC and AC parameters
M58WRxxxKU, M58WRxxxKL
Figure 13. Single Synchronous Read ac waveforms
tELKH
Hi-Z
tELTV
tKHAX
tAVKH
tLLKH
tGLQV
tGLTV
tGLQX
Note 1
tKHQV
VALID
VALID
VALID
tGHQZ
Note 3
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Configuration Register.
2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low.
3. The CLOCK signal can be held high or low
4. Address latched and data output on the rising clock edge.
5. The BINV signal has the shown waveform only if it has been enabled with the Configuration Register. When disabled, it remains Low.
6. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
WAIT(2)
G
E
K(4)
L
tLLLH
VALID ADDRESS
A16-Amax(6)
tAVLH
VALID ADDRESS
ADQ0-ADQ15
BINV(5)
VALID
VALID
tEHEL
tEHQZ
tEHQX
VALID
VALID
AI13527
tEHTZ
tGHQX
M58WRxxxKU, M58WRxxxKL
DC and AC parameters
Figure 14. Synchronous Burst Read Suspend ac waveforms
69/123
DC and AC parameters
M58WRxxxKU, M58WRxxxKL
Figure 15. Clock input ac waveform
tKHKL
tKHKH
tr
tf
tKLKH
AI06981
Table 25.
Synchronous Read ac characteristics
M58WRxxxKU/L
Synchronous Read Timings
Symbol
Parameter
Unit
60
70
tAVKH
tAVCLKH
Address Valid to Clock High
Min
4
5
ns
tELKH
tELCLKH
Chip Enable Low to Clock High
Min
4
5
ns
tELTV
Chip Enable Low to Wait Valid
Max
9
11
ns
tEHEL
Chip Enable Pulse Width
(subsequent synchronous reads)
Min
11
14
ns
tEHTZ
Chip Enable High to Wait Hi-Z
Max
11
14
ns
tGHTV
Output Enable High to Wait Valid
Min
11
11
ns
tGLTV
Output Enable Low to Wait Valid
Max
11
11
ns
tKHAX
tCLKHAX
Clock High to Address Transition
Min
6
7
ns
tKHQV
tKHTV
tCLKHQV
Clock High to Output Valid
Clock High to WAIT Valid
Max
9
11
ns
tKHQX
tKHTX
tCLKHQX
Clock High to Output Transition
Clock High to WAIT Transition
Min
2
3
ns
Min
4
5
ns
15
ns
tLLKH
Clock Specifications
Alt
tADVLCLKH Latch Enable Low to Clock High
Clock Period (66 MHz)
tKHKH
tCLK
Min
Clock Period (f=86 MHz)
12
tKHKL
tKLKH
Clock High to Clock Low
Clock Low to Clock High
Min
3.5
3.5
ns
tf
tr
Clock Fall or Rise Time
Max
3
3
ns
1. Sampled only, not 100% tested. For other timings please refer to Table 24: Asynchronous Read ac
characteristics.
70/123
tELLH
tLLLH
SET-UP
COMMAND
tGHLL tWLWH
tWHLL
tWHDX
tWHWL
tWHEH
tDVWH
COMMAND
BANK ADDRESS
tELWL
tLHAX
BANK ADDR.
tAVAV
VALID
CONFIRM
COMMAND
tVPHWH
tWPHWH
tWHKV
tWHEL
CMD OR DATA
VALID ADDRESS
VALID ADDR.
VALID
AI13528
tQVVPL
tQVWPL
STATUS REGISTER
READ
1ST POLLING
tWHVPL
tWHWPL
tELQV
STATUS
REGISTER
VALID
tLHGL
VALID ADDRESS
VALID ADDR.
Note 1: Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
K
VPP
WP
W
G
E
L
tAVLH
A16-Amax(1)
ADQ0-ADQ15
BINV
PROGRAM OR ERASE
M58WRxxxKU, M58WRxxxKL
DC and AC parameters
Figure 16. Write ac waveforms, Write Enable controlled
71/123
DC and AC parameters
Table 26.
M58WRxxxKU, M58WRxxxKL
Write ac characteristics, Write Enable controlled
M58WRxxxKU/L
Symbol
tAVAV
Alt
tWC
70
Min
60
70
ns
Address Valid to Latch Enable High
Min
4
7
ns
Data Valid to Write Enable High
Min
40
40
ns
Chip Enable Low to Latch Enable High
Min
9
10
ns
Chip Enable Low to Write Enable Low
Min
0
0
ns
tELQV
Chip Enable Low to Output Valid
Min
60
70
ns
tGHLL
Output Enable High to Latch Enable Low
Min
14
20
ns
tGHWL
Output Enable High to Write Enable Low
Min
14
20
ns
tLHAX
Latch Enable High to Address Transition
Min
4
7
ns
tLHGL
Latch Enable High to Output Enable Low
Min
4
5
ns
tLLLH
Latch Enable Pulse Width
Min
7
7
ns
tDVWH
tDS
tELLH
tELWL
Write Enable Controlled Timings
Unit
60
Address Valid to Next Address Valid
tAVLH
tCS
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
ns
Write Enable High to Chip Enable Low
Min
25
25
ns
tWHGL
Write Enable High to Output Enable Low
Min
0
0
ns
tWHLL(1)
Write Enable High to Latch Enable Low
Min
25
25
ns
tWHEL(1)
Protection Timings
Parameter
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
25
25
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
40
45
ns
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
0
ns
tQVWPL
Output (Status Register) Valid to Write
Protect Low
Min
0
0
ns
VPP High to Write Enable High
Min
200
200
ns
tWHVPL
Write Enable High to VPP Low
Min
200
200
ns
tWHWPL
Write Enable High to Write Protect Low
Min
200
200
ns
tWPHWH
Write Protect High to Write Enable High
Min
200
200
ns
tVPHWH
tVPS
1. tWHEL and tWHLL have this value when reading from the targeted bank or when reading from any address
after a Set Configuration Register command has been issued. System designers should take this into
account and may insert a software No-Op instruction to delay the first read in the same bank after issuing
any command, or to delay the first read to any address after issuing a Set Configuration Register
command. If the first read after the command is a Read Array operation in a different bank and no changes
to the Configuration Register have been issued, tWHEL and tWHLL are 0 ns.
2. Sampled only, not 100% tested.
72/123
tDVEH
COMMAND
SET-UP
COMMAND
tELEH
tELLH
tLLLH
tAVLH
BANK ADDRESS
tGHLL
tWLEL
tLHAX
BANK ADDR.
tAVAV
VALID
tEHWH
tEHEL
tEHLL
tEHDX
CMD OR DATA
CONFIRM
COMMAND
tVPHEH
tWPHEH
VALID ADDRESS
VALID ADDR.
VALID
tWHKV
tEHVPL
tEHWPL
tWHEL
tELQV
AI13529
tQVVPL
tQVWPL
STATUS
REGISTER
tLHGL
VALID ADDRESS
VALID ADDR.
VALID
PROGRAM OR ERASE
STATUS REGISTER
READ
1ST POLLING
Note 1: Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
K
VPP
WP
W
G
E
L
A16-Amax(1)
ADQ0-ADQ15
BINV
M58WRxxxKU, M58WRxxxKL
DC and AC parameters
Figure 17. Write ac waveforms, Chip Enable controlled
73/123
DC and AC parameters
Table 27.
M58WRxxxKU, M58WRxxxKL
Write ac characteristics, Chip Enable controlled
M58WRxxxKU/L
Chip Enable Controlled Timings
Symbol
Alt
Unit
60
70
tAVAV
tWC Address Valid to Next Address Valid
Min
60
70
ns
tAVLH
Address Valid to Latch Enable High
Min
4
7
ns
tDVEH
tDS
Data Valid to Chip Enable High
Min
40
40
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
ns
Min
25
25
ns
Chip Enable High to Latch Enable Low
Min
0
0
ns
tEHEL
tWPH Chip Enable High to Chip Enable Low
tEHLL
tEHWH
tCH
Chip Enable High to Write Enable High
Min
0
0
ns
tELEH
tWP
Chip Enable Low to Chip Enable High
Min
40
45
ns
tELLH
Chip Enable Low to Latch Enable High
Min
9
10
ns
tELQV
Chip Enable Low to Output Valid
Min
60
70
ns
tGHEL
Output Enable High to Chip Enable Low
Min
14
20
ns
tGHLL
Output Enable High to Latch Enable Low
Min
14
20
ns
tLHAX
Latch Enable High to Address Transition
Min
4
7
ns
tLHGL
Latch Enable High to Output Enable Low
Min
4
5
ns
tLLLH
Latch Enable Pulse Width
Min
7
7
ns
Write Enable High to Chip Enable Low
Min
25
25
ns
Write Enable Low to Chip Enable Low
Min
0
0
ns
tEHVPL
Chip Enable High to VPP Low
Min
200
200
ns
tEHWPL
Chip Enable High to Write Protect Low
Min
200
200
ns
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
0
ns
tQVWPL
Output (Status Register) Valid to Write
Protect Low
Min
0
0
ns
Min
200
200
ns
Min
200
200
ns
tWHEL(2)
tWLEL
Protection Timings
Parameter
tVPHEH
tWPHEH
tCS
tVPS VPP High to Chip Enable High
Write Protect High to Chip Enable High
1. Sampled only, not 100% tested.
2. tWHEL has this value when reading from the targeted bank or when reading from any address after a Set
Configuration Register command has been issued. System designers should take this into account and
may insert a software No-Op instruction to delay the first read in the same bank after issuing any
command, or to delay the first read to any address after issuing a Set Configuration Register command. If
the first read after the command is a Read Array operation in a different bank and no changes to the
Configuration Register have been issued, tWHEL is 0 ns.
74/123
M58WRxxxKU, M58WRxxxKL
DC and AC parameters
Figure 18. Reset and Power-up ac waveforms
tPHWL
tPHEL
tPHGL
tPHLL
W, E, G, L
tPLWL
tPLEL
tPLGL
tPLLL
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-Up
Reset
AI06976
Table 28.
Symbol
Reset and Power-up ac characteristics
Parameter
tPLWL
tPLEL
tPLGL
tPLLL
Reset Low to
Write Enable Low,
Chip Enable Low,
Output Enable Low,
Latch Enable Low
tPHWL
tPHEL
tPHGL
tPHLL
Test Condition
60
70
Unit
During Program
Min
10
10
µs
During Erase
Min
20
20
µs
After Power-Down
Min
50
50
µs
Other Conditions
Min
80
80
ns
Reset High to
Write Enable Low
Chip Enable Low
Output Enable Low
Latch Enable Low
Min
30
30
ns
tPLPH(1)(2)
RP Pulse Width
Min
50
50
ns
tVDHPH(3)
Supply Voltages High to Reset
High
Min
200
200
µs
1. The device Reset is possible but not guaranteed if tPLPH < 50 ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-Up or Reset.
75/123
Package mechanical
15
M58WRxxxKU, M58WRxxxKL
Package mechanical
In order to meet environmental requirements, Numonyx offers these devices in ECOPACK®
packages. These packages have a Lead-free second-level interconnect. The category of
Second-Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner box label.
Figure 19. VFBGA44 7.5 × 5 mm, 10 × 4 ball array, 0.50 mm pitch, bottom view
package outline
D
D2
D1
FE FE1
SD
E1
E2
E
SE
BALL "A1"
FD1
e
b
FD
A
A1
A2
ddd
BGA-Z52
1. Drawing is not to scale.
76/123
M58WRxxxKU, M58WRxxxKL
Table 29.
Package mechanical
VFBGA44 7.5 × 5 mm, 10 × 4 ball array, 0.50 mm pitch, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.000
A1
Max
0.0394
0.150
0.0059
A2
0.660
0.0260
b
0.300
0.250
0.350
0.0118
0.0098
0.0138
D
7.500
7.400
7.600
0.2953
0.2913
0.2992
D1
4.500
0.1772
D2
6.500
0.2559
ddd
0.080
4.900
E
5.000
E1
1.500
0.0591
E2
3.500
0.1378
e
0.500
FD
1.500
0.0591
FD1
0.500
0.0197
FE
1.750
0.0689
FE1
0.750
0.0295
SD
0.250
0.0098
SE
0.250
0.0098
–
5.100
0.0031
–
0.1969
0.0197
0.1929
0.2008
–
–
77/123
Part numbering
16
M58WRxxxKU, M58WRxxxKL
Part numbering
Table 30.
Ordering information scheme
Example:
M58 W
R 032 K
U
70 ZA
6
E
Device Type
M58
Architecture
W = Multiple Bank, Burst Mode
Operating Voltage
R = VDD = VDDQ = 1.7 V to 2 V
Density
016 = 16 Mbit (× 16)
032 = 32 Mbit (× 16)
064 = 64 Mbit (× 16)
Technology
K = 65 nm technology
Parameter Location
U = Top Boot, Mux I/O
L = Bottom Boot, Mux I/O
Speed
60 = 60 ns
70 = 70 ns
Package
ZA = VFBGA44 7.5 x 5 mm, 0.50 mm pitch
Temperature Range
6 = –40 to 85 °C
Option
E = ECOPACK® Package, Standard Packing
U = ECOPACK® Package, Tape & Reel Packing, 16mm
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.), Daisy chain ordering information, or for
further information on any aspect of this device, please contact the Numonyx Sales Office
nearest to you.
78/123
M58WRxxxKU, M58WRxxxKL
Appendix A
Block address tables
Table 31.
(1)
Bank 1
Parameter bank
Bank
Bank 2
Block address tables
Top boot block addresses, M58WR016KU
#
Size (Kword)
Address range
0
4
FF000-FFFFF
1
4
FE000-FEFFF
2
4
FD000-FDFFF
3
4
FC000-FCFFF
4
4
FB000-FBFFF
5
4
FA000-FAFFF
6
4
F9000-F9FFF
7
4
F8000-F8FFF
8
32
F0000-F7FFF
9
32
E8000-EFFFF
10
32
E0000-E7FFF
11
32
D8000-DFFFF
12
32
D0000-D7FFF
13
32
C8000-CFFFF
14
32
C0000-C7FFF
15
32
B8000-BFFFF
16
32
B0000-B7FFF
17
32
A8000-AFFFF
18
32
A0000-A7FFF
19
32
98000-9FFFF
20
32
90000-97FFF
21
32
88000-8FFFF
22
32
80000-87FFF
23
32
78000-7FFFF
24
32
70000-77FFF
25
32
68000-6FFFF
26
32
60000-67FFF
27
32
58000-5FFFF
28
32
50000-57FFF
29
32
48000-4FFFF
30
32
40000-47FFF
79/123
Block address tables
Table 31.
Bank 3
Bank(1)
M58WRxxxKU, M58WRxxxKL
Top boot block addresses, M58WR016KU (continued)
#
Size (Kword)
Address range
31
32
38000-3FFFF
32
32
30000-37FFF
33
32
28000-2FFFF
34
32
20000-27FFF
35
32
18000-1FFFF
36
32
10000-17FFF
37
32
08000-0FFFF
38
32
00000-07FFF
1. There are two Bank Regions: Bank Region 1 contains all the banks that are made up of main blocks only;
Bank Region 2 contains the banks that are made up of the parameter and main blocks (Parameter Bank).
Table 32.
Bank 2
Bank 3
Bank(1)
80/123
Bottom boot block addresses, M58WR016KL
#
Size (Kword)
Address range
38
32
F8000-FFFFF
37
32
F0000-F7FFF
36
32
E8000-EFFFF
35
32
E0000-E7FFF
34
32
D8000-DFFFF
33
32
D0000-D7FFF
32
32
C8000-CFFFF
31
32
C0000-C7FFF
30
32
B8000-BFFFF
29
32
B0000-B7FFF
28
32
A8000-AFFFF
27
32
A0000-A7FFF
26
32
98000-9FFFF
25
32
90000-97FFF
24
32
88000-8FFFF
23
32
80000-87FFF
M58WRxxxKU, M58WRxxxKL
Table 32.
Parameter Bank
Bank 1
Bank(1)
Block address tables
Bottom boot block addresses, M58WR016KL (continued)
#
Size (Kword)
Address range
22
32
78000-7FFFF
21
32
70000-77FFF
20
32
68000-6FFFF
19
32
60000-67FFF
18
32
58000-5FFFF
17
32
50000-57FFF
16
32
48000-4FFFF
15
32
40000-47FFF
14
32
38000-3FFFF
13
32
30000-37FFF
12
32
28000-2FFFF
11
32
20000-27FFF
10
32
18000-1FFFF
9
32
10000-17FFF
8
32
08000-0FFFF
7
4
07000-07FFF
6
4
06000-06FFF
5
4
05000-05FFF
4
4
04000-04FFF
3
4
03000-03FFF
2
4
02000-02FFF
1
4
01000-01FFF
0
4
00000-00FFF
1. There are two Bank Regions: Bank Region 2 contains all the banks that are made up of main blocks only;
Bank Region 1 contains the banks that are made up of the parameter and main blocks (Parameter Bank).
81/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 33.
Top boot block addresses, M58WR032KU
Bank 3
Bank 2
Bank 1
Parameter Bank
Bank(1)
82/123
#
Size (Kword)
Address range
0
4
1FF000-1FFFFF
1
4
1FE000-1FEFFF
2
4
1FD000-1FDFFF
3
4
1FC000-1FCFFF
4
4
1FB000-1FBFFF
5
4
1FA000-1FAFFF
6
4
1F9000-1F9FFF
7
4
1F8000-1F8FFF
8
32
1F0000-1F7FFF
9
32
1E8000-1EFFFF
10
32
1E0000-1E7FFF
11
32
1D8000-1DFFFF
12
32
1D0000-1D7FFF
13
32
1C8000-1CFFFF
14
32
1C0000-1C7FFF
15
32
1B8000-1BFFFF
16
32
1B0000-1B7FFF
17
32
1A8000-1AFFFF
18
32
1A0000-1A7FFF
19
32
198000-19FFFF
20
32
190000-197FFF
21
32
188000-18FFFF
22
32
180000-187FFF
23
32
178000-17FFFF
24
32
170000-177FFF
25
32
168000-16FFFF
26
32
160000-167FFF
27
32
158000-15FFFF
28
32
150000-157FFF
29
32
148000-14FFFF
30
32
140000-147FFF
31
32
138000-13FFFF
32
32
130000-137FFF
33
32
128000-12FFFF
34
32
120000-127FFF
35
32
118000-11FFFF
36
32
110000-117FFF
37
32
108000-10FFFF
38
32
100000-107FFF
M58WRxxxKU, M58WRxxxKL
Table 33.
Block address tables
Top boot block addresses, M58WR032KU (continued)
Bank 7
Bank 6
Bank 5
Bank 4
Bank(1)
#
Size (Kword)
Address range
39
32
0F8000-0FFFFF
40
32
0F0000-0F7FFF
41
32
0E8000-0EFFFF
42
32
0E0000-0E7FFF
43
32
0D8000-0DFFFF
44
32
0D0000-0D7FFF
45
32
0C8000-0CFFFF
46
32
0C0000-0C7FFF
47
32
0B8000-0BFFFF
48
32
0B0000-0B7FFF
49
32
0A8000-0AFFFF
50
32
0A0000-0A7FFF
51
32
098000-09FFFF
52
32
090000-097FFF
53
32
088000-08FFFF
54
32
080000-087FFF
55
32
078000-07FFFF
56
32
070000-077FFF
57
32
068000-06FFFF
58
32
060000-067FFF
59
32
058000-05FFFF
60
32
050000-057FFF
61
32
048000-04FFFF
62
32
040000-047FFF
63
32
038000-03FFFF
64
32
030000-037FFF
65
32
028000-02FFFF
66
32
020000-027FFF
67
32
018000-01FFFF
68
32
010000-017FFF
69
32
008000-00FFFF
70
32
000000-007FFF
1. There are two Bank Regions: Bank Region 1 contains all the banks that are made up of main blocks only;
Bank Region 2 contains the banks that are made up of the parameter and main blocks (Parameter Bank).
83/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 34.
Bottom boot block addresses, M58WR032KL
Bank 4
Bank 5
Bank 6
Bank 7
Bank(1)
84/123
#
Size (Kword)
Address range
70
32
1F8000-1FFFFF
69
32
1F0000-1F7FFF
68
32
1E8000-1EFFFF
67
32
1E0000-1E7FFF
66
32
1D8000-1DFFFF
65
32
1D0000-1D7FFF
64
32
1C8000-1CFFFF
63
32
1C0000-1C7FFF
62
32
1B8000-1BFFFF
61
32
1B0000-1B7FFF
60
32
1A8000-1AFFFF
59
32
1A0000-1A7FFF
58
32
198000-19FFFF
57
32
190000-197FFF
56
32
188000-18FFFF
55
32
180000-187FFF
54
32
178000-17FFFF
53
32
170000-177FFF
52
32
168000-16FFFF
51
32
160000-167FFF
50
32
158000-15FFFF
49
32
150000-157FFF
48
32
148000-14FFFF
47
32
140000-147FFF
46
32
138000-13FFFF
45
32
130000-137FFF
44
32
128000-12FFFF
43
32
120000-127FFF
42
32
118000-11FFFF
41
32
110000-117FFF
40
32
108000-10FFFF
39
32
100000-107FFF
M58WRxxxKU, M58WRxxxKL
Table 34.
Block address tables
Bottom boot block addresses, M58WR032KL (continued)
Bank 1
Bank 2
Bank 3
Bank(1)
#
Size (Kword)
Address range
38
32
0F8000-0FFFFF
37
32
0F0000-0F7FFF
36
32
0E8000-0EFFFF
35
32
0E0000-0E7FFF
34
32
0D8000-0DFFFF
33
32
0D0000-0D7FFF
32
32
0C8000-0CFFFF
31
32
0C0000-0C7FFF
30
32
0B8000-0BFFFF
29
32
0B0000-0B7FFF
28
32
0A8000-0AFFFF
27
32
0A0000-0A7FFF
26
32
098000-09FFFF
25
32
090000-097FFF
24
32
088000-08FFFF
23
32
080000-087FFF
22
32
078000-07FFFF
21
32
070000-077FFF
20
32
068000-06FFFF
19
32
060000-067FFF
18
32
058000-05FFFF
17
32
050000-057FFF
16
32
048000-04FFFF
15
32
040000-047FFF
85/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 34.
Bottom boot block addresses, M58WR032KL (continued)
Parameter Bank
Bank(1)
#
Size (Kword)
Address range
14
32
038000-03FFFF
13
32
030000-037FFF
12
32
028000-02FFFF
11
32
020000-027FFF
10
32
018000-01FFFF
9
32
010000-017FFF
8
32
008000-00FFFF
7
4
007000-007FFF
6
4
006000-006FFF
5
4
005000-005FFF
4
4
004000-004FFF
3
4
003000-003FFF
2
4
002000-002FFF
1
4
001000-001FFF
0
4
000000-000FFF
1. There are two Bank Regions: Bank Region 2 contains all the banks that are made up of main blocks only;
Bank Region 1 contains the banks that are made up of the parameter and main blocks (Parameter Bank).
86/123
M58WRxxxKU, M58WRxxxKL
Table 35.
Block address tables
Top boot block addresses, M58WR064KU
Bank 3
Bank 2
Bank 1
Parameter bank
Bank(1)
#
Size (Kword)
Address range
0
4
3FF000-3FFFFF
1
4
3FE000-3FEFFF
2
4
3FD000-3FDFFF
3
4
3FC000-3FCFFF
4
4
3FB000-3FBFFF
5
4
3FA000-3FAFFF
6
4
3F9000-3F9FFF
7
4
3F8000-3F8FFF
8
32
3F0000-3F7FFF
9
32
3E8000-3EFFFF
10
32
3E0000-3E7FFF
11
32
3D8000-3DFFFF
12
32
3D0000-3D7FFF
13
32
3C8000-3CFFFF
14
32
3C0000-3C7FFF
15
32
3B8000-3BFFFF
16
32
3B0000-3B7FFF
17
32
3A8000-3AFFFF
18
32
3A0000-3A7FFF
19
32
398000-39FFFF
20
32
390000-397FFF
21
32
388000-38FFFF
22
32
380000-387FFF
23
32
378000-37FFFF
24
32
370000-377FFF
25
32
368000-36FFFF
26
32
360000-367FFF
27
32
358000-35FFFF
28
32
350000-357FFF
29
32
348000-34FFFF
30
32
340000-347FFF
31
32
338000-33FFFF
32
32
330000-337FFF
33
32
328000-32FFFF
34
32
320000-327FFF
35
32
318000-31FFFF
36
32
310000-317FFF
37
32
308000-30FFFF
38
32
300000-307FFF
87/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 35.
Top boot block addresses, M58WR064KU (continued)
Bank 8
Bank 7
Bank 6
Bank 5
Bank 4
Bank(1)
88/123
#
Size (Kword)
Address range
39
32
2F8000-2FFFFF
40
32
2F0000-2F7FFF
41
32
2E8000-2EFFFF
42
32
2E0000-2E7FFF
43
32
2D8000-2DFFFF
44
32
2D0000-2D7FFF
45
32
2C8000-2CFFFF
46
32
2C0000-2C7FFF
47
32
2B8000-2BFFFF
48
32
2B0000-2B7FFF
49
32
2A8000-2AFFFF
50
32
2A0000-2A7FFF
51
32
298000-29FFFF
52
32
290000-297FFF
53
32
288000-28FFFF
54
32
280000-287FFF
55
32
278000-27FFFF
56
32
270000-277FFF
57
32
268000-26FFFF
58
32
260000-267FFF
59
32
258000-25FFFF
60
32
250000-257FFF
61
32
248000-24FFFF
62
32
240000-247FFF
63
32
238000-23FFFF
64
32
230000-237FFF
65
32
228000-22FFFF
66
32
220000-227FFF
67
32
218000-21FFFF
68
32
210000-217FFF
69
32
208000-20FFFF
70
32
200000-207FFF
71
32
1F8000-1FFFFF
72
32
1F0000-1F7FFF
73
32
1E8000-1EFFFF
74
32
1E0000-1E7FFF
75
32
1D8000-1DFFFF
76
32
1D0000-1D7FFF
77
32
1C8000-1CFFFF
78
32
1C0000-1C7FFF
M58WRxxxKU, M58WRxxxKL
Table 35.
Block address tables
Top boot block addresses, M58WR064KU (continued)
Bank 13
Bank 12
Bank 11
Bank 10
Bank 9
Bank(1)
#
Size (Kword)
Address range
79
32
1B8000-1BFFFF
80
32
1B0000-1B7FFF
81
32
1A8000-1AFFFF
82
32
1A0000-1A7FFF
83
32
198000-19FFFF
84
32
190000-197FFF
85
32
188000-18FFFF
86
32
180000-187FFF
87
32
178000-17FFFF
88
32
170000-177FFF
89
32
168000-16FFFF
90
32
160000-167FFF
91
32
158000-15FFFF
92
32
150000-157FFF
93
32
148000-14FFFF
94
32
140000-147FFF
95
32
138000-13FFFF
96
32
130000-137FFF
97
32
128000-12FFFF
98
32
120000-127FFF
99
32
118000-11FFFF
100
32
110000-117FFF
101
32
108000-10FFFF
102
32
100000-107FFF
103
32
0F8000-0FFFFF
104
32
0F0000-0F7FFF
105
32
0E8000-0EFFFF
106
32
0E0000-0E7FFF
107
32
0D8000-0DFFFF
108
32
0D0000-0D7FFF
109
32
0C8000-0CFFFF
110
32
0C0000-0C7FFF
111
32
0B8000-0BFFFF
112
32
0B0000-0B7FFF
113
32
0A8000-0AFFFF
114
32
0A0000-0A7FFF
115
32
098000-09FFFF
116
32
090000-097FFF
117
32
088000-08FFFF
118
32
080000-087FFF
89/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 35.
Top boot block addresses, M58WR064KU (continued)
Bank 15
Bank 14
Bank(1)
#
Size (Kword)
Address range
119
32
078000-07FFFF
120
32
070000-077FFF
121
32
068000-06FFFF
122
32
060000-067FFF
123
32
058000-05FFFF
124
32
050000-057FFF
125
32
048000-04FFFF
126
32
040000-047FFF
127
32
038000-03FFFF
128
32
030000-037FFF
129
32
028000-02FFFF
130
32
020000-027FFF
131
32
018000-01FFFF
132
32
010000-017FFF
133
32
008000-00FFFF
134
32
000000-007FFF
1. There are two Bank Regions: Bank Region 1 contains all the banks that are made up of main blocks only;
Bank Region 2 contains the banks that are made up of the parameter and main blocks (Parameter Bank).
Table 36.
Bottom boot block addresses, M58WR064KL
Bank 14
Bank 15
Bank(1)
90/123
#
Size (Kword)
Address range
134
32
3F8000-3FFFFF
133
32
3F0000-3F7FFF
132
32
3E8000-3EFFFF
131
32
3E0000-3E7FFF
130
32
3D8000-3DFFFF
129
32
3D0000-3D7FFF
128
32
3C8000-3CFFFF
127
32
3C0000-3C7FFF
126
32
3B8000-3BFFFF
125
32
3B0000-3B7FFF
124
32
3A8000-3AFFFF
123
32
3A0000-3A7FFF
122
32
398000-39FFFF
121
32
390000-397FFF
120
32
388000-38FFFF
119
32
380000-387FFF
M58WRxxxKU, M58WRxxxKL
Table 36.
Block address tables
Bottom boot block addresses, M58WR064KL (continued)
Bank 10
Bank 11
Bank 12
Bank 13
Bank(1)
#
Size (Kword)
Address range
118
32
378000-37FFFF
117
32
370000-377FFF
116
32
368000-36FFFF
115
32
360000-367FFF
114
32
358000-35FFFF
113
32
350000-357FFF
112
32
348000-34FFFF
111
32
340000-347FFF
110
32
338000-33FFFF
109
32
330000-337FFF
108
32
328000-32FFFF
107
32
320000-327FFF
106
32
318000-31FFFF
105
32
310000-317FFF
104
32
308000-30FFFF
103
32
300000-307FFF
102
32
2F8000-2FFFFF
101
32
2F0000-2F7FFF
100
32
2E8000-2EFFFF
99
32
2E0000-2E7FFF
98
32
2D8000-2DFFFF
97
32
2D0000-2D7FFF
96
32
2C8000-2CFFFF
95
32
2C0000-2C7FFF
94
32
2B8000-2BFFFF
93
32
2B0000-2B7FFF
92
32
2A8000-2AFFFF
91
32
2A0000-2A7FFF
90
32
298000-29FFFF
89
32
290000-297FFF
88
32
288000-28FFFF
87
32
280000-287FFF
91/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 36.
Bottom boot block addresses, M58WR064KL (continued)
Bank 6
Bank 7
Bank 8
Bank 9
Bank(1)
92/123
#
Size (Kword)
Address range
86
32
278000-27FFFF
85
32
270000-277FFF
84
32
268000-26FFFF
83
32
260000-267FFF
82
32
258000-25FFFF
81
32
250000-257FFF
80
32
248000-24FFFF
79
32
240000-247FFF
78
32
238000-23FFFF
77
32
230000-237FFF
76
32
228000-22FFFF
75
32
220000-227FFF
74
32
218000-21FFFF
73
32
210000-217FFF
72
32
208000-20FFFF
71
32
200000-207FFF
70
32
1F8000-1FFFFF
69
32
1F0000-1F7FFF
68
32
1E8000-1EFFFF
67
32
1E0000-1E7FFF
66
32
1D8000-1DFFFF
65
32
1D0000-1D7FFF
64
32
1C8000-1CFFFF
63
32
1C0000-1C7FFF
62
32
1B8000-1BFFFF
61
32
1B0000-1B7FFF
60
32
1A8000-1AFFFF
59
32
1A0000-1A7FFF
58
32
198000-19FFFF
57
32
190000-197FFF
56
32
188000-18FFFF
55
32
180000-187FFF
M58WRxxxKU, M58WRxxxKL
Table 36.
Block address tables
Bottom boot block addresses, M58WR064KL (continued)
Bank 2
Bank 3
Bank 4
Bank 5
Bank(1)
#
Size (Kword)
Address range
54
32
178000-17FFFF
53
32
170000-177FFF
52
32
168000-16FFFF
51
32
160000-167FFF
50
32
158000-15FFFF
49
32
150000-157FFF
48
32
148000-14FFFF
47
32
140000-147FFF
46
32
138000-13FFFF
45
32
130000-137FFF
44
32
128000-12FFFF
43
32
120000-127FFF
42
32
118000-11FFFF
41
32
110000-117FFF
40
32
108000-10FFFF
39
32
100000-107FFF
38
32
0F8000-0FFFFF
37
32
0F0000-0F7FFF
36
32
0E8000-0EFFFF
35
32
0E0000-0E7FFF
34
32
0D8000-0DFFFF
33
32
0D0000-0D7FFF
32
32
0C8000-0CFFFF
31
32
0C0000-0C7FFF
30
32
0B8000-0BFFFF
29
32
0B0000-0B7FFF
28
32
0A8000-0AFFFF
27
32
0A0000-0A7FFF
26
32
098000-09FFFF
25
32
090000-097FFF
24
32
088000-08FFFF
23
32
080000-087FFF
93/123
Block address tables
M58WRxxxKU, M58WRxxxKL
Table 36.
Bottom boot block addresses, M58WR064KL (continued)
Parameter Bank
Bank 1
Bank(1)
#
Size (Kword)
Address range
22
32
078000-07FFFF
21
32
070000-077FFF
20
32
068000-06FFFF
19
32
060000-067FFF
18
32
058000-05FFFF
17
32
050000-057FFF
16
32
048000-04FFFF
15
32
040000-047FFF
14
32
038000-03FFFF
13
32
030000-037FFF
12
32
028000-02FFFF
11
32
020000-027FFF
10
32
018000-01FFFF
9
32
010000-017FFF
8
32
008000-00FFFF
7
4
007000-007FFF
6
4
006000-006FFF
5
4
005000-005FFF
4
4
004000-004FFF
3
4
003000-003FFF
2
4
002000-002FFF
1
4
001000-001FFF
0
4
000000-000FFF
1. There are two Bank Regions: Bank Region 2 contains all the banks that are made up of main blocks only;
Bank Region 1 contains the banks that are made up of the parameter and main blocks (Parameter Bank).
94/123
M58WRxxxKU, M58WRxxxKL
Appendix B
Common Flash Interface
Common Flash Interface
The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the Read CFI Query Command is issued the device enters CFI Query mode and the
data structure is read from the memory. Tables 37, 38, 39, 40, 41, 42, 43, 44, 45 and 46
show the addresses used to retrieve the data. The Query data is always presented on the
lowest order data outputs (DQ0-DQ7), the other outputs (DQ8-DQ15) are set to 0.
The CFI data structure also contains a security area where a 64 bit unique security number
is written (see Figure 6: Protection Register memory map). This area can be accessed only
in Read mode by the final user. It is impossible to change the security number after it has
been written by Numonyx. Issue a Read Array command to return to Read mode.
Table 37.
Query structure overview(1)
Offset
Sub-section name
Description
00h
Reserved
Reserved for algorithm-specific information
10h
CFI query identification string
Command set ID and algorithm data offset
1Bh
System interface information
Device timing & voltage information
27h
Device geometry definition
Flash device layout
P
Primary algorithm-specific extended query Additional information specific to the primary
table
algorithm (optional)
A
Alternate algorithm-specific extended
query table
Additional information specific to the alternate
algorithm (optional)
Security code area
Lock Protection Register
Unique device Number and
User Programmable OTP
80h
1. The Flash memory display the CFI data structure when CFI Query command is issued. In this table are
listed the main sub-sections detailed in Tables 38, 39, 40 and 41. Query data is always presented on the
lowest order data outputs.
95/123
Common Flash Interface
Table 38.
CFI query identification string
Offset
Sub-section name
00h
0020h
01h
8823h
8828h
88C0h
8824h
8829h
88C1h
02h
reserved
03h
DRC
04h-0Fh
reserved
10h
0051h
11h
0052h
12h
0059h
13h
0003h
14h
0000h
15h
16h
96/123
M58WRxxxKU, M58WRxxxKL
Description
Value
Manufacturer code
Device code
Numonyx
M58WR016KU
M58WR032KU
M58WR064KU
M58WR016KL
M58WR032KL
M58WR064KL
Reserved
Die revision code
Reserved
"Q"
Query unique ASCII string "QRY"
0000h
18h
0000h
19h
value = A = 0000h
1Ah
0000h
"R"
"Y"
Primary algorithm command set and control interface ID
code 16 bit ID code defining a specific algorithm
offset = P = 0039h Address for primary algorithm extended query table (see
Table 41)
0000h
17h
Top
Top
Top
Bottom
Bottom
Bottom
p = 39h
Alternate vendor command set and control interface ID
code second vendor - specified algorithm supported
NA
Address for alternate algorithm extended query table
NA
M58WRxxxKU, M58WRxxxKL
Table 39.
Common Flash Interface
CFI query system interface information
Offset
Data
Description
Value
1Bh
0017h
VDD logic supply minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7 V
1Ch
0020h
VDD logic supply maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
1Dh
0085h
VPP [programming] supply minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5 V
1Eh
0095h
VPP [programming] supply maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5 V
1Fh
0004h
Typical time-out per single byte/word program = 2n µs
16 µs
n
0000h
Typical time-out for multi-byte program = 2 µs
NA
21h
000Ah
n
Typical time-out per individual block erase = 2 ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
20h
23h
24h
0003h
0000h
n
Maximum time-out for word program = 2 times typical
n
Maximum time-out for multi-byte program = 2 times typical
2n
25h
0002h
Maximum time-out per individual block erase =
26h
0000h
Maximum time-out for chip erase = 2n times typical
times typical
128 µs
NA
4s
NA
97/123
Common Flash Interface
Table 40.
Offset
Word
Mode
27h
Top devices
Data
Description
Value
0015h
M58WR016KU/L Device size = 2n in number of bytes
2 Mbytes
0016h
M58WR032KU/L Device size = 2n in number of bytes
4 Mbytes
n
M58WR064KU/L Device size = 2 in number of bytes
28h
29h
0001h
0000h
Flash device interface code description
2Ah
2Bh
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0002h
Number of identical sized Erase block regions within the device
bit 7 to 0 = x = number of Erase block regions
2
001Eh
0000h
M58WR016KU region 1 information
Number of identical-size Erase blocks = 001Eh+1
31
003Eh
0000h
M58WR032KU region 1 information
Number of identical-size Erase blocks = 003Eh+1
63
007Eh
0000h
M58WR064KU region 1 information
Number of identical-size Erase blocks = 007Eh+1
127
2Fh
30h
0000h
0001h
Region 1 information
Block size in region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 information
Number of identical-size Erase blocks = 0007h+1
33h
34h
0020h
0000h
Region 2 information
Block size in region 2 = 0020h * 256 byte
35h
38h
Bottom devices
Device geometry definition
0017h
2Dh
2Eh
Reserved for future Erase block region information
8 Mbytes
x 16
Async.
NA
64 Kbyte
8
8 Kbyte
NA
2Dh
2Eh
0007h
0000h
Region 1 information
Number of identical-size Erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 information
Block size in region 1 = 0020h * 256 byte
001Eh
0000h
M58WR016KL region 1 information
Number of identical-size Erase blocks = 001Eh+1
31
003Eh
0000h
M58WR032KL region 1 information
Number of identical-size Erase blocks = 003Eh+1
63
007Eh
0000h
M58WR064KL region 1 information
Number of identical-size Erase blocks = 007Eh+1
127
0000h
0001h
Region 2 information
Block size in region 2 = 0100h * 256 byte
31h
32h
33h
34h
35h
38h
98/123
M58WRxxxKU, M58WRxxxKL
Reserved for future Erase block region information
8
8 Kbyte
64 Kbyte
NA
M58WRxxxKU, M58WRxxxKL
Table 41.
Common Flash Interface
Primary algorithm-specific extended query table(1)
Offset
Data
(P)h = 39h
0050h
0052h
Description
Value
"P"
Primary algorithm extended query table unique ASCII string “PRI”
0049h
"R"
"I"
(P+3)h = 3Ch
0031h
Major version number, ASCII
"1"
(P+4)h = 3Dh
0033h
Minor version number, ASCII
"3"
(P+5)h = 3Eh
00E6h
Extended query table contents for primary algorithm. Address (P+5)h contains
less significant byte.
0003h
(P+7)h = 40h
(P+8)h = 41h
0000h
0000h
bit 0Chip Erase supported(1 = Yes, 0 = No)
bit 1Erase Suspend supported(1 = Yes, 0 = No)
bit 2Program Suspend supported(1 = Yes, 0 = No)
bit 3Legacy Lock/Unlock supported(1 = Yes, 0 = No)
bit 4Queued Erase supported(1 = Yes, 0 = No)
bit 5Instant individual block locking supported(1 = Yes, 0 = No)
bit 6Protection bits supported(1 = Yes, 0 = No)
bit 7Page mode read supported(1 = Yes, 0 = No)
bit 8Synchronous read supported(1 = Yes, 0 = No)
bit 9Simultaneous operation supported(1 = Yes, 0 = No)
bit 10 to 31Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31 bit
field of optional features follows at the end of the bit-30 field.
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
Yes
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
(P+9)h = 42h
Yes
0001h
bit 0Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1Reserved; undefined bits are ‘0’
(P+A)h = 43h
0003h
Block Protect Status
Defines which bits in the Block Status Register section of the Query are
implemented.
(P+B)h = 44h
0000h
bit 0Block protect Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2Reserved for future use; undefined bits are ‘0’
Yes
Yes
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
(P+C)h = 45h
0018h
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1.8 V
VPP Supply Optimum Program/Erase voltage
(P+D)h = 46h
0090h
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
9V
1. The variable P is a pointer that is defined at CFI offset 15h.
99/123
Common Flash Interface
Table 42.
M58WRxxxKU, M58WRxxxKL
Protection Register information(1)
Offset
Data
(P+E)h = 47h
0001h
(P+F)h = 48h
0080h
(P+10)h = 49h
0000h
(P+11)h =
4Ah
0003h
(P+12)h= 4Bh
0004h
Description
Value
Number of protection register fields in JEDEC ID space. 0000h indicates
that 256 fields are available.
Protection Field 1: protection description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2n bytes in factory pre-programmed region
Bits 24-31 2n bytes in user programmable region
1
0080h
8 Bytes
16 Bytes
1. The variable P is a pointer that is defined at CFI offset 15h.
Table 43.
Burst Read Information(1)
Offset
Data
Description
Value
(P+13)h = 4Ch
0003h
Page-mode read capability
bits 0-7’n’ such that 2n HEX value represents the number of read-page
bytes. See offset 28h for device word width to determine page-mode data
output width.
(P+14)h = 4Dh
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+15)h = 4Eh
0001h
Synchronous mode read capability configuration 1
bit 3-7Reserved
bit 0-2’n’ such that 2n+1 HEX value represents the maximum number of
continuous synchronous reads when the device is configured for its
maximum word width. A value of 07h indicates that the device is capable of
continuous linear bursts that will output data until the internal burst counter
reaches the end of the device’s burstable address space. This field’s 3-bit
value can be written directly to the read configuration register bit 0-2 if the
device is configured for its maximum word width. See offset 28h for word
width to determine the burst data output width.
4
(P+16)h = 4Fh
0002h
Synchronous mode read capability configuration 2
8
(P+17)h = 50h
0003h
Synchronous mode read capability configuration 3
16
(P+18)h = 51h
0007h
Synchronous mode read capability configuration 4
Cont.
1. The variable P is a pointer that is defined at CFI offset 15h.
Table 44.
Bank and Erase block region information
M58WR032KU
M58WR032KL
Description
Offset
Data
Offset
Data
(P+19)h = 52h
02h
(P+19)h = 52h
02h
Number of Bank Regions within the device
1. The variable P is a pointer that is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see Tables 31, 32, 33, 34, 35 and 36.
100/123
8 Bytes
M58WRxxxKU, M58WRxxxKL
Table 45.
Common Flash Interface
Bank and Erase block region 1 information(1)
M58WR016KU,
M58WR032KU,
M58WR064KU
M58WR016KL,
M58WR032KL,
M58WR064KL
Offset
Data
Offset
Data
(P+1A)h = 53h
03h(2)
07h(3)
0Fh(4)
(P+1A)h = 53h
01h
00h
(P+1B)h = 54h
(P+1B)h = 54h
(P+1C)h = 55h
(P+1D)h = 56h
(P+1E)h = 57h
11h
00h
00h
Number of identical banks within Bank Region 1
(P+1C)h = 55h
(P+1D)h = 56h
(P+1E)h = 57h
00h
11h
Number of program or erase operations allowed in Bank
Region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
00h
Number of program or erase operations allowed in other
banks while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous samesize erase blocks.
Symmetrically blocked banks have one blocking region.(5)
(P+1F)h = 58h
01h
(P+1F)h = 58h
02h
(P+20)h = 59h
07h
(P+20)h = 59h
07h
(P+21)h = 5Ah
00h
(P+21)h = 5Ah
00h
(P+22)h = 5Bh
00h
(P+22)h = 5Bh
20h
(P+23)h = 5Ch
01h
(P+23)h = 5Ch
00h
(P+24)h = 5Dh
64h
(P+24)h = 5Dh
64h
(P+25)h = 5Eh
00h
(P+25)h = 5Eh
00h
(P+26)h = 5Fh
(P+27)h = 60h
01h
03h
Description
(P+26)h = 5Fh
(P+27)h = 60h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
01h
Bank Region 1 (Erase Block Type 1): bits per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved 5Eh 01 5Eh 01
03h
Bank Region 1 (Erase Block Type 1): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
101/123
Common Flash Interface
Table 45.
Bank and Erase block region 1 information(1) (continued)
M58WR016KU,
M58WR032KU,
M58WR064KU
Offset
M58WRxxxKU, M58WRxxxKL
Data
M58WR016KL,
M58WR032KL,
M58WR064KL
Description
Offset
Data
(P+28)h = 61h
06h
Bank Region 1 Erase Block Type 2 Information
(P+29)h = 62h
00h
(P+2A)h = 63h
00h
Bits 0-15: n+1 = number of identical-sized erase
blocks
(P+2B)h = 64h
01h
Bits 16-31: n×256 = number of bytes in erase block region
(P+2C)h = 65h
64h
(P+2D)h = 66h
00h
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+2E)h = 67h
(P+2F)h = 68h
01h
Bank Regions 1 (Erase Block Type 2): bits per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
03h
Bank Region 1 (Erase Block Type 2): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
1. The variable P is a pointer that is defined at CFI offset 15h.
2. Applies to M58WR016KU.
3. Applies to M58WR032KU.
4. Applies to M58WR064KU.
5. Bank Regions. There are two Bank Regions, see Tables 31, 32, 33, 34, 35 and 36.
102/123
M58WRxxxKU, M58WRxxxKL
Table 46.
Common Flash Interface
Bank and Erase block region 2 information(1)
M58WR016KU,
M58WR032KU,
M58WR064KU
M58WR016KL,
M58WR032KL,
M58WR064KL
Offset
Offset
Data
(P+30)h = 69h
03h(2)
07h(3)
0Fh(4)
(P+28)h = 61h
(P+29)h = 62h
(P+2A)h = 63h
(P+2B)h = 64h
(P+2C)h = 65h
Data
01h
00h
11h
00h
00h
(P+31)h = 6Ah
(P+32)h = 6Bh
(P+33)h = 6Ch
(P+34)h = 6Dh
11h
Number of program or erase operations allowed in Bank
Region 2:
Bits 0-3: number of simultaneous program operations
Bits 4-7: number of simultaneous erase operations
00h
Number of program or erase operations allowed in other
banks while a bank in this region is programming
Bits 0-3: number of simultaneous program operations
Bits 4-7: number of simultaneous erase operations
00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: number of simultaneous program operations
Bits 4-7: number of simultaneous erase operations
Types of erase block regions in Bank Region 2
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.(5)
02h
(P+35)h = 6Eh
01h
(P+2E)h = 67h
06h
(P+36)h = 6Fh
07h
(P+2F)h = 68h
00h
(P+37)h = 70h
00h
(P+30)h = 69h
00h
(P+38)h = 71h
00h
(P+31)h = 6Ah
01h
(P+39)h = 72h
01h
(P+32)h = 6Bh
64h
(P+3A)h = 73h
64h
(P+33)h = 6Ch
00h
(P+3B)h = 74h
00h
(P+35)h = 6Eh
01h
03h
(P+3C)h = 75h
(P+3D)h = 76h
Number of identical banks within Bank Region 2
00h
(P+2D)h = 66h
(P+34)h = 6Dh
Description
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
01h
Bank Region 2 (Erase Block Type 1): bits per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
Bits 5-7: reserved
03h
Bank Region 2 (Erase Block Type 1): Page mode and
synchronous mode capabilities (defined in Table 43)
Bit 0: page-mode reads permitted
Bit 1: synchronous reads permitted
Bit 2: synchronous writes permitted
Bits 3-7: reserved
103/123
Common Flash Interface
Table 46.
M58WRxxxKU, M58WRxxxKL
Bank and Erase block region 2 information(1) (continued)
M58WR016KU,
M58WR032KU,
M58WR064KU
M58WR016KL,
M58WR032KL,
M58WR064KL
Offset
Data
Offset
(P+36)h = 6Fh
07h
(P+37)h = 70h
00h
(P+38)h = 71h
20h
(P+39)h = 72h
00h
(P+3A)h = 73h
64h
(P+3B)h = 74h
00h
(P+3C)h = 75h
(P+3D)h = 76h
Description
Data
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 2 (Erase Block Type 2)
Minimum block erase cycles × 1000
01h
Bank Region 2 (Erase Block Type 2): bits per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
Bits 5-7: reserved
03h
Bank Region 2 (Erase Block Type 2): Page mode and
synchronous mode capabilities (defined in Table 43)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+3E)h = 77h
(P+3E)h = 77h
Feature space definitions
(P+3F)h = 78h
(P+3F)h = 78h
Reserved
1. The variable P is a pointer that is defined at CFI offset 15h.
2. Applies to M58WR016KL.
3. Applies to M58WR032KL.
4. Applies to M58WR064KL.
5. Bank Regions. There are two Bank Regions, see Tables 31, 32, 33, 34, 35 and 36.
104/123
M58WRxxxKU, M58WRxxxKL
Appendix C
Flowcharts and pseudocodes
Flowcharts and pseudocodes
Figure 20. Program flowchart and pseudocode
Start
program_command (addressToProgram, dataToProgram) {:
writeToFlash (addressToProgram, 0x40);
/*writeToFlash (addressToProgram, 0x10);*/
/*see note (3)*/
Write 40h or 10h (3)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
status_register=readFlash (addressToProgram);
"see note (3)";
/* E or G must be toggled*/
Read Status
Register (3)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06170c
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program
operation or after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Any address within the bank can equally be used.
105/123
Flowcharts and pseudocodes
M58WRxxxKU, M58WRxxxKL
Figure 21. Double Word Program flowchart and pseudocode
Start
Write 35h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (addressToProgram1, 0x35);
/*see note (4)*/
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
Write Address 1
& Data 1 (3, 4)
Write Address 2
& Data 2 (3)
do {
status_register=readFlash (addressToProgram) ;
"see note (4)"
/* E or G must be toggled*/
Read Status
Register (4)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06171b
1. Status check of b1 (Protected Block), b3 (VPP Invalid) and b4 (Program Error) can be made after each program operation
or after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
4. Any address within the bank can equally be used.
106/123
M58WRxxxKU, M58WRxxxKL
Flowcharts and pseudocodes
Figure 22. Quadruple Word Program flowchart and pseudocode
Start
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
writeToFlash (addressToProgram1, 0x56);
/*see note (4) */
Write 56h
Write Address 1
& Data 1 (3, 4)
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 2
& Data 2 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
Write Address 3
& Data 3 (3)
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
Write Address 4
& Data 4 (3)
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (addressToProgram) ;
/"see note (4) "/
/* E or G must be toggled*/
Read Status
Register (4)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06977b
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program
operation or after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
4. Any address within the bank can equally be used.
107/123
Flowcharts and pseudocodes
M58WRxxxKU, M58WRxxxKL
Figure 23. Program Suspend & Resume flowchart and pseudocode
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
program has already completed */
Write 70h
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
Read Status
Register
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR2 = 1
NO
Program Complete
if (status_register.SR2==0) /*program completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
YES
Read Data
}
else
Write FFh
{ writeToFlash (bank_address, 0xFF) ;
Read data from
another address
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
Write D0h
writeToFlash (bank_address, 0x70) ;
/*read status register to check if program has completed */
Write 70h(1)
}
Program Continues with
Bank in Read Status
Register Mode
}
AI10117b
1. The Read Status Register command (Write 70h) can be issued just before or just after the Program Resume command.
108/123
M58WRxxxKU, M58WRxxxKL
Flowcharts and pseudocodes
Figure 24. Block Erase flowchart and pseudocode
Start
erase_command ( blockToErase ) {
writeToFlash (blockToErase, 0x20) ;
/*see note (2) */
Write 20h (2)
writeToFlash (blockToErase, 0xD0) ;
/* only ADQ12-ADQ15 and A16-Amax(3) are significant */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
status_register=readFlash (blockToErase) ;
/* see note (2) */
/* E or G must be toggled*/
Read Status
Register (2)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1)
YES
Command
Sequence Error (1)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
YES
SR4, SR5 = 1
if ( (status_register.SR4==1) && (status_register.SR5==1) )
/* command sequence error */
error_handler ( ) ;
NO
SR5 = 0
NO
Erase Error (1)
if ( (status_register.SR5==1) )
/* erase error */
error_handler ( ) ;
YES
SR1 = 0
NO
Erase to Protected
Block Error (1)
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI13531
1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can equally be used.
3. Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in the M58WR064KU/L.
109/123
Flowcharts and pseudocodes
M58WRxxxKU, M58WRxxxKL
Figure 25. Erase Suspend & Resume flowchart and pseudocode
Start
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
Write B0h
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
Write 70h
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
Read Status
Register
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR6 = 1
NO
Erase Complete
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
Write FFh
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Read Data
YES
Write FFh
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
Read data from another block,
Program,
/*read or program data from another block*/
Set Configuration Register
or
Block Lock/Unlock/Lock-Down
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
Write D0h
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
Write 70h(1)
Erase Continues with
Bank in Read Status
Register Mode
}
}
AI13530b
1. The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
110/123
M58WRxxxKU, M58WRxxxKL
Flowcharts and pseudocodes
Figure 26. Locking operations flowchart and pseudocode
Start
locking_operation_command (address, lock_operation) {
writeToFlash (address, 0x60) ; /*configuration setup*/
/* see note (1) */
Write 60h (1)
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
Write
01h, D0h or 2Fh
writeToFlash (address, 0x90) ;
/*see note (1) */
Write 90h (1)
Read Block
Lock States
Locking
change
confirmed?
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
/*Check the locking state (see Read Block Signature table )*/
NO
YES
writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/
/*see note (1) */
Write FFh (1)
}
End
AI06176b
1. Any address within the bank can equally be used.
111/123
Flowcharts and pseudocodes
M58WRxxxKU, M58WRxxxKL
Figure 27. Protection Register Program flowchart and pseudocode
Start
protection_register_program_command (addressToProgram, dataToProgram) {:
writeToFlash (addressToProgram, 0xC0) ;
/*see note (3) */
Write C0h (3)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
status_register=readFlash (addressToProgram) ;
/* see note (3) */
/* E or G must be toggled*/
Read Status
Register (3)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06177b
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program
operation or after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Any address within the bank can equally be used.
112/123
M58WRxxxKU, M58WRxxxKL
Flowcharts and pseudocodes
Figure 28. Enhanced Factory Program flowchart
SETUP PHASE
VERIFY PHASE
Start
Write PD1
Address WA1(1)
Write 30h
Address WA1
Write D0h
Address WA1
Read Status
Register
Read Status
Register
SR0 = 0?
NO
Check SR4, SR3
and SR1 for program,
VPP and Lock Errors
SR7 = 0?
Exit
PROGRAM PHASE
YES
Write PD2
Address WA2(1)
YES
SR0 = 0?
NO
NO
YES
Read Status
Register
Write PD1
Address WA1
SR0 = 0?
Read Status
Register
NO
YES
NO
SR0 = 0?
Write PDn
Address WAn(1)
YES
Write PD2
Address WA2(1)
Read Status
Register
Read Status
Register
SR0 = 0?
NO
YES
SR0 = 0?
NO
Write FFFFh
Address =/ Block WA1
YES
EXIT PHASE
Write PDn
Address WAn(1)
Read Status
Register
Read Status
Register
SR7 = 1?
NO
YES
SR0 = 0?
NO
Check Status
Register for Errors
YES
Write FFFFh
Address =/ Block WA1
End
AI06160
1. Address can remain Starting Address WA1 or be incremented.
113/123
Flowcharts and pseudocodes
16.1
M58WRxxxKU, M58WRxxxKL
Enhanced Factory Program pseudocode
efp_command(addressFlow,dataFlow,n)
/* n is the number of data to be programmed */
{
/* setup phase */
writeToFlash(addressFlow[0],0x30);
writeToFlash(addressFlow[0],0xD0);
status_register=readFlash(any_address);
if (status_register.SR7==1){
/*EFP aborted for an error*/
if (status_register.SR4==1) /*program error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR1==1) /*program to protect block error*/
error_handler();
}
else{
/*Program Phase*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
} while (status_register.SR0==1)
/*Ready for first data*/
for (i=0; i++; i< n){
writeToFlash(addressFlow[i],dataFlow[i]);
/* status register polling*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
} while (status_register.SR0==1);
/* Ready for a new data */
}
writeToFlash(another_block_address,FFFFh);
/* Verify Phase */
for (i=0; i++; i< n){
writeToFlash(addressFlow[i],dataFlow[i]);
/* status register polling*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
} while (status_register.SR0==1);
/* Ready for a new data */
}
writeToFlash(another_block_address,FFFFh);
/* exit program phase */
/* Exit Phase */
/* status register polling */
do{
status_register=readFlash(any_address);
/* E or G must be toggled */
} while (status_register.SR7==0);
if (status_register.SR4==1) /*program failure error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR1==1) /*program to protect block error*/
error_handler();
}
}
114/123
M58WRxxxKU, M58WRxxxKL
Flowcharts and pseudocodes
Figure 29. Quadruple enhanced factory program flowchart
SETUP PHASE
LOAD PHASE
Start
Write 75h
Address WA1
FIRST
LOAD PHASE
Write PD1
Address WA1
Read Status
Register
Write PD1
Address WA1(1)
Write PD2
Address WA2(2)
Write PD3
Address WA3(2)
NO
SR7 = 0?
YES
Write PD4
Address WA4(2)
EXIT PHASE
Check SR4, SR3
and SR1 for program,
VPP and Lock Errors
PROGRAM AND
VERIFY PHASE
Read Status
Register
Write FFFFh
Address =
/ Block WA1
Exit
NO
SR0 = 0?
YES
Check SR4 for
Programming Errors
End
Last Page?
NO
YES
AI06178b
1. Address can remain Starting Address WA1 (in which case the next Page is programmed) or can be any address in the
same block.
2. The address is only checked for the first word of each Page as the order to program the words is fixed, so subsequent
words in each Page can be written to any address.
115/123
Flowcharts and pseudocodes
16.2
M58WRxxxKU, M58WRxxxKL
Quadruple enhanced factory program pseudocode
quad_efp_command(addressFlow,dataFlow,n)
/* n is the number of pages to be programmed.*/
{
/* Setup phase */
writeToFlash(addressFlow[0],0x75);
for (i=0; i++; i< n){
/*Data Load Phase*/
/*First Data*/
writeToFlash(addressFlow[i],dataFlow[i,0]);
/*at the first data of the first page, Quad-EFP may be aborted*/
if (First_Page) {
status_register=readFlash(any_address);
if (status_register.SR7==1){
/*EFP aborted for an error*/
if (status_register.SR4==1) /*program error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR1==1) /*program to protect block
error*/
error_handler();
}
}
/*2nd data*/
writeToFlash(addressFlow[i],dataFlow[i,1]);
/*3rd data*/
writeToFlash(addressFlow[i],dataFlow[i,2]);
/*4th data*/
writeToFlash(addressFlow[i],dataFlow[i,3]);
/* Program&Verify Phase */
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
}while (status_register.SR0==1)
}
/* Exit Phase */
writeToFlash(another_block_address,FFFFh);
/* status register polling */
do{
status_register=readFlash(any_address);
/* E or G must be toggled */
} while (status_register.SR7==0);
if (status_register.SR1==1) /*program to protected block error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR4==1) /*program failure error*/
error_handler();
}
}
116/123
M58WRxxxKU, M58WRxxxKL
Appendix D
Table 47.
Command interface state tables
Command interface state tables
Command interface states - modify table, next state(1)
Command Input
Current CI State
Read
Array(2)
(FFh)
Ready
Ready
Erase
Read
Clear
Confirm, P/E
Block
DWP,
Program/ Read
Status Electronic
WP
EFP
Quad-EFP
Resume,
Erase
QWP
Erase
Status Register signature,
setup(3)(4) Setup(3)(4) Setup(3)(4) Setup Setup
Block Unlock
Read CFI
Suspend Register
(5)
(10/40h)
(30h)
(75h)
confirm, EFP
Query
(B0h)
(70h)
(35h, 56h)
(20h)
Confirm
(50h) (90h, 98h)
(D0h)
Program
Setup
Lock/CR Setup
Program
Setup
Erase
Setup
EFP Quad-EFP
Setup
Setup
Ready (Lock Error)
Ready
Setup
OTP
Busy
OTP Busy
IS in OTP busy
OTP Busy
OTP busy
Setup
Program Busy
Program
busy
IS in Program busy
Program busy
Program IS in Program
busy
Suspend
PS
IS in Program Suspend
Program Busy
Ready (error)
Erase
Busy
IS in Erase busy
Erase Busy
ES
Lock/CR Setup in ES
Erase Busy
Program
in ES
IS in Erase Suspend
Erase Busy
Erase Suspend
Program Busy in Erase Suspend
Program
Busy in ES
Program IS in Program
in ES busy in ES
IS in PS in ES
ES
Erase Suspend
Setup
Suspend
Ready (error)
Erase busy
IS in ES
Busy
Program Suspend
Erase Busy
IS in Erase
busy
Suspend
Program busy
Program suspend
Setup
Erase
PS
Program Busy
IS in PS
Busy
Ready (Lock Error)
OTP Busy
IS in OTP
busy
Busy
Ready
IS in Program Busy in Erase Suspend
Program Busy
PS in ES
in ES
Program Busy in Erase
Suspend
Program Busy in Erase Suspend
PS in ES
IS in Program suspend in ES
Program Busy
in ES
Program Suspend in Erase Suspend
Program Suspend in Erase Suspend
Erase Suspend (Lock Error)
ES
Erase Suspend (Lock Error)
117/123
Command interface state tables
Table 47.
M58WRxxxKU, M58WRxxxKL
Command interface states - modify table, next state(1) (continued)
Command Input
Current CI State
Setup
EFP
Quad
EFP
Read
Array(2)
(FFh)
Erase
Read
Clear
Confirm, P/E
Block
DWP,
Program/ Read
Status Electronic
WP
EFP
Quad-EFP
Resume,
Erase
QWP
Erase
Status Register signature,
setup(3)(4) Setup(3)(4) Setup(3)(4) Setup Setup
Block Unlock
Read CFI
Suspend Register
(5)
(10/40h)
(30h)
(75h)
confirm, EFP
Query
(B0h)
(70h)
(35h, 56h)
(20h)
Confirm
(50h) (90h, 98h)
(D0h)
Ready (error)
EFP Busy
Busy
EFP Busy(6)
Verify
EFP Verify(6)
Setup
Quad EFP Busy(6)
Busy
Quad EFP Busy(6)
Ready (error)
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple
Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase
Controller, PS = program suspend, ES = erase suspend, IS = Illegal state.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined
data output.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’.EFP and Quad EFP are busy if Block
Address is first EFP Address. Any other commands are treated as data.
118/123
M58WRxxxKU, M58WRxxxKL
Table 48.
Command interface state tables
Command interface states - Modify table, next output(1)
Command Input(2)
Current CI State
Block
Read DWP, QWP
Erase
Array(3) Setup(4)(5)
Setup(4)(5)
(FFh) (35h, 56h)
(20h)
EFP
Setup
(30h)
QuadEFP
Setup
(75h)
Erase Confirm
Program/
Read
Clear Status Read Electronic
P/E Resume,
Erase
Status
Register(6) signature, Read
Block Unlock
CFI Query (90h,
Suspend Register
confirm, EFP
(50h)
98h)
(B0h)
(70h)
Confirm (D0h)
Program Setup
Erase Setup
OTP Setup
Program Setup in
Erase Suspend
EFP Setup
EFP Busy
Status Register
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Lock/CR Setup in
Erase Suspend
Status Register
OTP Busy
Ready
Program Busy
Erase Busy
Array
Status Register
Output Unchanged
Program/Erase
Suspend
Status
Register
Output
Unchanged
Electronic
Signature/CFI
Program Busy in
Erase Suspend
Program Suspend
in Erase Suspend
Illegal State
Output Unchanged
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple
Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase
Controller, IS = Illegal State, ES = Erase suspend, PS = Program suspend.
2. The output state shows the type of data that appears at the outputs if the bank address is the same as the command
address. A bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI Query mode,
depending on the command issued. Each bank remains in its last output state until a new command is issued. The next
state does not depend on the bank’s output state.
3. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined
data output.
4. The two cycle command should be issued to the same bank address.
5. If the P/E.C. is active, both cycles are ignored.
6. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
119/123
Command interface state tables
Table 49.
M58WRxxxKU, M58WRxxxKL
Command interface states - Lock table, next state(1)
Command Input
Current CI State
Lock/CR
Setup(2)
(60h)
OTP
Setup(2)
(C0h)
Ready
Lock/CR Setup
OTP Setup
Lock/CR Setup
Block Lock
Confirm
(01h)
Busy
Ready (Lock error)
Ready
Ready (Lock error)
N/A
OTP Busy
IS in OTP busy
OTP Busy
Ready
IS Ready
Setup
Program Busy
N/A
IS in Program busy
Program Busy
IS in Program
busy
Ready
Program busy
IS in PS
IS Ready
Program Suspend
N/A
IS in PS
Program Suspend
N/A
Setup
Ready (error)
N/A
Busy
IS in Erase Busy
Erase Busy
IS in Erase Busy
Suspend
Lock/CR Setup
in ES
IS in Erase
Suspend
N/A
Erase Suspend
N/A
Program Busy in Erase Suspend
IS in Program busy in ES
Program Busy in Erase Suspend
IS in Program
busy in ES
Suspend
IS Ready
Erase Suspend
Setup
Busy
Ready
Erase Busy
IS in ES
Program
in Erase
Suspend
N/A
OTP Busy
Suspend
Erase
P/E. C.
Operation
Completed
IS in OTP busy
Busy
Program
Illegal
Command(4)
Ready
Setup
OTP
Block Lock- Set CR EFP Exit,
Down
Confirm Quad EFP
Confirm (2Fh) (03h)
Exit(3)
ES
Program busy in ES
IS in PS in ES
IS in ES
Program Suspend in Erase Suspend
N/A
IS in PS in ES
Lock/CR Setup in ES
Program Suspend in Erase Suspend
Erase Suspend (Lock error)
Erase Suspend
Setup
EFP
Erase Suspend (Lock error)
Ready (error)
(5)
Busy
EFP Busy
Verify
EFP Verify(5)
N/A
EFP Verify
EFP Busy
Ready
EFP Verify(5)
Ready
Quad EFP
Busy(4)
Quad EFP Busy(5)
N/A
Ready
N/A
QuadEFP
Busy
(5)
Quad EFP Busy(5)
Setup
N/A
Ready
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple
Enhanced Factory Program, P/E. C. = Program/Erase Controller, IS = Illegal state, ES = Erase suspend, PS = Program
suspend.
2. If the P/E.C. is active, both cycles are ignored.
3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
4. Illegal commands are those not defined in the command set.
5. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’. EFP and Quad EFP are busy if Block
Address is first EFP Address. Any other commands are treated as data.
120/123
M58WRxxxKU, M58WRxxxKL
Table 50.
Command interface state tables
Command interface states - Lock table, next output(1)
Command Input
Current CI State
Lock/CR
Setup(2)
(60h)
OTP Setup(2)
(C0h)
Block Lock
Confirm
(01h)
Block LockDown
Confirm
(2Fh)
Set CR
Confirm
(03h)
EFP Exit,
Quad EFP
Exit(3)
Illegal
Command(4)
P/E. C.
Operation
Completed
Program Setup
Erase Setup
OTP Setup
Program Setup in
Erase Suspend
Status Register
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Output
Unchanged
Lock/CR Setup
Status Register
Lock/CR Setup in
Erase Suspend
Array
Status Register
OTP Busy
Ready
Program Busy
Erase Busy
Status Register
Output Unchanged
Array
Program/Erase
Suspend
Output
Unchanged
Program Busy in
Erase Suspend
Program Suspend in
Erase Suspend
Illegal State
Output Unchanged
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple
Enhanced Factory Program, P/E. C. = Program/Erase Controller.
2. If the P/E.C. is active, both cycles are ignored.
3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
4. Illegal commands are those not defined in the command set.
121/123
Revision history
M58WRxxxKU, M58WRxxxKL
Revision history
Table 51.
Document revision history
Date
Version
Changes
0.1
Initial release.
M58WR032KU/L (revision 0.2 of 21-Jul-2006) and M58WR064KU/L
(revision 0.1 of 21-Sep-2006) datasheets merged. M58WR016KU and
M58WR016KL part numbers added.
Changes made:
Document status promoted from Target Specification to Preliminary Data.
60 ns speed class and 86 MHz frequency added.
During Erase Suspend, the Set Configuration Register command is also
accepted (see Program/Erase Suspend command and Figure 23:
Program Suspend & Resume flowchart and pseudocode).
VDDQ max modified in Table 19: Absolute maximum ratings.
VPPLK max modified in Table 23: DC characteristics - voltages.
Data and Values modified at address offsets 1Dh and 1Eh in Table 39:
CFI query system interface information. Value modified at address offset
(P+D)h = 46h in Table 41: Primary algorithm-specific extended query
table. Data modified at address offsets (P+2E)h = 67h, (P+30)h = 69h and
(P+31)h = 6Ah in Table 46: Bank and Erase block region 2 information.
Appendix D: Command interface state tables updated.
0.2
Parameter Block, Main Block and Bank Program values modified for
VPP = VPPH in Table 18: Program, erase times and endurance cycles.
VRPH removed from Table 23: DC characteristics - voltages. tELTV, tEHTZ,
tEHQZ, tGHQZ, tAVLH, tELLH, tLHAX, tLHGL modified for 60 ns speed class in
Table 24: Asynchronous Read ac characteristics.
tAVKH, tELKH, tELTV, tEHEL, tGHTV, tGHTL, tKHAX, tKHQX, tKHTX, tLLKH
modified for 60 ns speed class in Table 25: Synchronous Read ac
characteristics. tVDHPH modified in Table 28: Reset and Power-up ac
characteristics.
Data modified at address offset (P+D)h = 46h in Table 41: Primary
algorithm-specific extended query table. Small text changes.
16-Jan-2007
0.3
Small text changes.
Section 5.8: Program/Erase Suspend command and Figure 25: Erase
Suspend & Resume flowchart and pseudocode) updated.
IDD5 values when VPP = VDD and IDD6 values modified in Table 22: DC
characteristics - currents.
Note 1 added below Table 41, Note 1 added below Table 42 and Note 1
added below Table 43.
tAVLH min, tELLH min, tLHAX min, tLHGL min and max values modified in
Table 26: Write ac characteristics, Write Enable controlled and Table 27:
Write ac characteristics, Chip Enable controlled.
25-May-2007
1
Document status promoted from Preliminary Data to full Datasheet.
IDD1, IDD5 and IDD6 changed in Table 22.: DC characteristics - currents.
Data modified in Table 46.: Bank and Erase block region 2 information.
3-Dec-2007
2
Applied Numonyx branding.
06-Nov-2006
05-Jan-2007
122/123
M58WRxxxKU, M58WRxxxKL
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123/123