ON BAS16DXV6T1 Dual switching diode Datasheet

BAS16DXV6T1,
BAS16DXV6T5,
SBAS16DXV6T1G
Dual Switching Diode
Features
http://onsemi.com
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements
Pb−Free Packages are Available
6
1
4
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
75
V
Recurrent Peak Forward Current
IF
200
mA
IFM(surge)
500
mA
Peak Forward Surge Current
Pulse Width = 10 ms
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
TA = 25°C
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
54
1
2
3
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
Derate above 25°C
Total Device Dissipation
6
mW/°C
RqJA
250
(Note 1)
°C/W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
A6 MG
G
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BAS16DXV6T1
SOT−563
4000 / Tape &
Reel
BAS16DXV6T1G
SOT−563
(Pb−Free)
4000 / Tape &
Reel
BAS16DXV6T5
SOT−563
8000 / Tape &
Reel
BAS16DXV6T5G
SOT−563
(Pb−Free)
8000 / Tape &
Reel
SBAS16DXV6T1G
SOT−563
(Pb−Free)
8000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 3
1
Publication Order Number:
BAS16DXV6/D
BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
−
−
715
855
1000
1250
−
−
−
1.0
50
30
CD
−
2.0
pF
trr
−
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
QS
−
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
−
1.75
V
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
http://onsemi.com
2
Unit
mV
mA
BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G
1 ns MAX
DUT
500 W
t
trr
10%
tif
50 W
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
500 W
VC
DUT
BAW62
VCM
20 ns MAX
D1
t
10%
243 pF
100 KW
Qa
VCM +
C
DUTY CYCLE = 2%
t
90%
Vf
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
450 W
1 KW
V
90%
DUT
Vfr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
http://onsemi.com
3
50 W
BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G
10
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
TA = 150°C
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
10
Figure 4. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 5. Leakage Current
CD, DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
2
0
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 6. Capacitance
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 7. Normalized Thermal Response
http://onsemi.com
4
10
100
1000
BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
e
2
A
4
E
−Y−
3
b
L
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAS16DXV6/D
Similar pages