INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP032N06N3，IIPP032N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pulsed 480 A PD Total Dissipation @TC=25℃ 188 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.8 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP032N06N3，IIPP032N06N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS=VGS; ID=118μA RDS(on) Drain-Source On-Resistance IGSS VGS=0V; ID = 1mA MIN TYP MAX 60 V 4 V VGS=10V; ID=100A 3.2 mΩ Gate-Source Leakage Current VGS=20V;VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 2 μA VSD Diode forward voltage IF =100A, VGS = 0 V 1.2 V isc website：www.iscsemi.cn 2 2 UNIT isc & iscsemi is registered trademark