MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector−Emitter Voltage MJD31, MJD32 MJD31C, MJD32C Symbol Max Unit VCEO Emitter−Base Voltage VEB 5.0 Vdc COLLECTOR 2,4 1 BASE 1 BASE 3 EMITTER 3.0 Adc 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD W W/°C 15 0.12 4 4 1 2 3 −65 to + 150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V AYWW J3xxG DPAK A Y WW xx G THERMAL CHARACTERISTICS Symbol Max Unit RqJC 8.3 °C/W Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W TL 260 °C 2 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance, Junction−to−Case 1 DPAK CASE 369C STYLE 1 W W/°C 1.56 0.012 TJ, Tstg Lead Temperature for Soldering Purposes 3 EMITTER Vdc IC Characteristic COLLECTOR 2,4 40 100 ICM Operating and Storage Junction Temperature Range COMPLEMENTARY Vdc VCB Collector Current − Peak SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS 40 100 Collector−Base Voltage MJD31, MJD32 MJD31C, MJD32C Collector Current − Continuous www.onsemi.com YWW J3xxG IPAK = Site Code = Year = Work Week = 1, 1C, 2, or 2C = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2016 September, 2016 − Rev. 16 1 Publication Order Number: MJD31/D MJD31 (NPN), MJD32 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, MJD32 MJD31C, MJD32C VCEO(sus) Vdc 40 100 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) MJD31, MJD32 (VCE = 60 Vdc, IB = 0) MJD31C, MJD32C ICEO Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − − mAdc − 50 − 50 − 20 − 1 25 10 − 50 − 1.2 − 1.8 3 − 20 − mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = ⎪hfe⎪• ftest. www.onsemi.com 2 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS VCC +30 V PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 +11 V RB SCOPE 0 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 tr, tf ≤ 10 ns DUTY CYCLE = 1% 50 75 100 T, TEMPERATURE (°C) 125 150 Figure 2. Switching Time Test Circuit IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C ts′ 1 t, TIME (s) μ 0.3 3 2 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V 0.7 0.5 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP. 2 1 D1 51 -9 V Figure 1. Power Derating t, TIME (s) μ RC 25 ms tr @ VCC = 10 V tf @ VCC = 30 V 0.7 0.5 0.3 0.2 tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 100 td @ VBE(off) = 2 V 0.05 0.07 0.1 0.3 0.5 0.7 0.1 0.07 0.05 0.03 0.03 1 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Turn−On Time Figure 4. Turn−Off Time 2 Duty Cycle = 0.5 0.2 RqJA (°C/W) 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (sec) Figure 5. Thermal Response www.onsemi.com 3 1 10 100 1000 3 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 1000 VCE = 4 V −55°C 10 1 0.01 0.6 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 25°C 100 25°C 100 −55°C 10 1 0.1 1 0.01 10 Figure 7. DC Current Gain at VCE = 2 V 150°C 0.3 0.2 25°C 0.1 −55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 1.2 1.1 0.9 0.9 −55°C 25°C 0.6 0.5 150°C 0.4 0.3 0.01 0.1 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER ON VOLTAGE (V) 1.0 0.7 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 9. Base−Emitter Saturation Voltage VCE = 5 V 0.8 IC/IB = 10 1.0 Figure 8. Collector−Emitter Saturation Voltage 0.2 0.001 10 Figure 6. DC Current Gain at VCE = 4 V 0.4 1.1 1 IC, COLLECTOR CURRENT (A) 0.5 1.2 0.1 IC, COLLECTOR CURRENT (A) IC/IB = 10 0 0.001 VCE = 2 V 150°C VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 2 TA = 25°C 1.6 1.2 100 mA 500 mA 0.8 IC = 3 A 1A 0.4 10 mA 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 10. Base-Emitter “On” Voltage Figure 11. Collector Saturation Region www.onsemi.com 4 1000 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 100 Cib 100 Cob 10 0.1 1 10 VR, REVERSE VOLTAGE (V) VCE = 5 V TA = 25°C 10 1 0.001 1 100 Figure 12. Capacitance 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 13. Current−Gain−Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) TA = 25°C fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) 1000 1 0.1 0.01 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Safe Operating Area www.onsemi.com 5 100 10 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP) 1000 1000 hFE, DC CURRENT GAIN 100 −55°C 10 1 0.01 0.9 1 1.4 150°C 0.6 0.5 0.4 0.3 0.2 25°C 0.1 0 0.001 0.01 0.1 1 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1 10 IC/IB = 10 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector−Emitter Saturation Voltage Figure 18. Base−Emitter Saturation Voltage 1.2 VCE = 5 V 1.0 0.9 150°C 25°C 0.6 0.5 −55°C 0.3 0.2 0.001 0.1 Figure 16. DC Current Gain at VCE = 2 V 0.7 0.4 0.01 Figure 15. DC Current Gain at VCE = 4 V −55°C 0.7 10 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.8 −55°C IC, COLLECTOR CURRENT (A) 0.8 1.1 100 1 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 1 0.1 VCE = 2 V 25°C 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 4 V 25°C 150°C 2 TA = 25°C 500 mA 1.6 IC = 3 A 100 mA 1.2 1A 0.8 0.4 10 mA 0 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 20. Collector Saturation Region Figure 19. Base−Emitter “On” Voltage www.onsemi.com 6 1000 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS 100 1000 fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Cib 100 Cob 10 0.1 1 10 VCE = 5 V TA = 25°C 10 1 0.001 1 100 0.01 0.1 1 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 21. Capacitance Figure 22. Current−Gain−Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) TA = 25°C 1 ms 1 1s 0.1 0.01 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 23. Safe Operating Area www.onsemi.com 7 100 10 MJD31 (NPN), MJD32 (PNP) ORDERING INFORMATION Package Type Package Shipping† MJD31CG DPAK (Pb−Free) 369C 75 Units / Rail NJVMJD31CG* DPAK (Pb−Free) 369C 75 Units / Rail MJD31C1G IPAK (Pb−Free) 369D 75 Units / Rail MJD31CRLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel NJVMJD31CRLG* DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD31CT4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD31CT4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD31T4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD31T4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD32CG DPAK (Pb−Free) 369C 75 Units / Rail NJVMJD32CG* DPAK (Pb−Free) 369C 75 Units / Rail MJD32CRLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD32CT4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD32CT4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD32RLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD32T4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD32T4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 8 MJD31 (NPN), MJD32 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− MJD31 (NPN), MJD32 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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