Advance Technical Information IXFK80N50Q3 IXFX80N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 80A Ω 65mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA G D S Tab PLUS247 (IXFX) 80 A 240 A TC = 25°C 80 A EAS TC = 25°C 5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 1250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G z VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 50 μA 2 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 6.5 Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z BVDSS D = Drain Tab = Drain Features z Characteristic Values Min. Typ. Max. Tab S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D V z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 65 mΩ DS100299(02/11) IXFK80N50Q3 IXFX80N50Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 VDS = 20V, ID = 0.5 • ID25, Note 1 55 S 10 nF 1260 pF 115 pF 0.15 Ω 30 ns 20 ns 43 ns Dim. 15 ns 200 nC 77 nC 90 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs TO-264 AA Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.10 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 40A, -di/dt = 100A/μs 1.8 15.6 VR = 100V, VGS = 0V Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM Outline 250 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK80N50Q3 IXFX80N50Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 180 VGS = 10V VGS = 10V 160 70 60 140 9V ID - Amperes ID - Amperes 120 50 40 30 8V 9V 100 80 60 20 40 10 8V 20 7V 7V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 80 3.4 VGS = 10V 9V 70 R DS(on) - Normalized 50 8V 40 30 20 VGS = 10V 3.0 60 ID - Amperes 20 VDS - Volts VDS - Volts 2.6 I D = 80A 2.2 I D = 40A 1.8 1.4 1.0 7V 10 0.6 6V 0 0.2 0 2 4 6 8 10 12 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 90 VGS = 10V 2.8 80 TJ = 125ºC 2.6 60 2.2 ID - Amperes R DS(on) - Normalized 70 2.4 2.0 1.8 1.6 50 40 30 1.4 20 TJ = 25ºC 1.2 10 1.0 0.8 0 0 20 40 60 80 100 120 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK80N50Q3 IXFX80N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 100 TJ = - 40ºC 100 80 25ºC g f s - Siemens ID - Amperes 80 TJ = 125ºC 25ºC - 40ºC 60 60 125ºC 40 40 20 20 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 20 40 VGS - Volts 60 80 100 120 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 240 16 VDS = 250V 14 I D = 40A 200 I G = 10mA 160 VGS - Volts IS - Amperes 12 120 10 8 6 80 TJ = 125ºC 4 TJ = 25ºC 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 VSD - Volts 80 120 160 200 240 280 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz 100µs 100 10,000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss 1,000 Coss 100 10 1 TJ = 150ºC Crss TC = 25ºC Single Pulse 10 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK80N50Q3 IXFX80N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8)02-18-11