INCHANGE Semiconductor MUR6060PT Ultrafast Rectifier FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Uninterruptible power supplies ·Rectifier in switch mode power supplies ·Ultrasonic cleaners and welders ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 60 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 300 A PD Maximum power dissipation 125 W TJ Junction Temperature 150 ℃ -40~150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MUR6060PT Fast Recovery Rectifier ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER VF Maximum Instantaneous Forward Voltage IR Maximum Instantaneous Reverse Current CONDITIONS Maximum Reverse Recovery Time isc website：www.iscsemi.com UNIT IF= 37A ;Tj=25℃ 1.6 1.4 VR= VRWM;Tj=25℃ 100 50 7000 μA 50 ns IF= 37A ;Tj=150℃ VR=0.8 VRWM;Tj=25℃ VR=0.8 VRWM;Tj=125℃ trr MAX IF =1.0A; 2 V isc & iscsemi is registered trademark