ON NTJD2152P Trench small signal mosfet Datasheet

NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
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Features
•
•
•
•
•
Leading –8 V Trench for Low RDS(ON) Performance
ESD Protected Gate
Small Footprint (2 x 2 mm)
Same Package as SC−70−6
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
V(BR)DSS
RDS(on) TYP
0.22 @ −4.5 V
0.32 @ −2.5 V
−8 V
SOT−363
SC−88 (6 LEADS)
Load Power switching
DC−DC Conversion
Li−Ion Battery Charging Circuits
Cell Phones, Media Players, Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−8.0
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−0.775
A
TA = 25 °C
Continuous Drain
Current
(Based on RJA)
Steady
State
Power Dissipation
(Based on RJA)
Steady
State
TA = 25 °C
Continuous Drain
Current
(Based on RJL)
Steady
State
TA = 25 °C
Power Dissipation
(Based on RJL)
Steady
State
TA = 85 °C
PD
W
0.27
0.14
ID
−0.8
TA = 25 °C
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
TA = 85 °C
0.29
t ≤10 s
IDM
±1.2
A
TJ,
TSTG
−55 to
150
°C
IS
−0.775
TL
260
Continuous Source Current (Body Diode)
MARKING DIAGRAM
6
TAD
SC−88 (SOT−363)
CASE 419B
Style 26
W
0.55
PD
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
1
A
−1.1
TA = 85 °C
Operating Junction and Storage Temperature
S1
−0.558
TA = 85 °C
Pulsed Drain Current
−0.775 A
0.51 @ −1.8 V
Applications
•
•
•
•
ID Max
TA
D
= Device Code
= Date Code
PIN ASSIGNMENT
1
6
Source−1
Drain−1
A
Gate−1
Gate−2
°C
Drain−2
Source−2
Top View
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Typ
Max
Junction−to−Ambient – Steady State
RJA
400
460
Junction−to−Lead (Drain) – Steady State
RJL
194
226
Unit
ORDERING INFORMATION
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 2
1
Publication Order Number:
NTJD2152/D
NTJD2152P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 A
−8.0
−10.5
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
−6.0
mV/°C
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −6.4 V
1.0
A
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
10
A
VGS(TH)
VGS = VDS, ID = −250 A
−1.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
( )
Forward Transconductance
gFS
−0.45
−0.83
mV/ °C
2.2
VGS = −4.5 V, ID = −0.57 A
0.22
0.3
VGS = −2.5 V, ID = −0.48 A
0.32
0.46
VGS = −1.8 V, ID = −0.20 A
0.51
0.9
VGS = −4.0 V, ID = −0.57 A
2.0
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = −8.0
80V
160
225
38
55
28
40
VGS = −4.5 V, VDS = −5.0 V,
ID = −0.6
06A
2.2
4.0
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.5
Gate−to−Drain Charge
QGD
0.5
pF
nC
0.1
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = −4.5 V, VDD = −4.0 V,
ID = −0.5
0 5 A,
A RG = 8
8.0
0
ns
13
23
td(OFF)
50
tf
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS = −0.23
0 23 A
TJ = 25°C
0.76
TJ = 125°C
0.63
VGS = 0 V, dIS/dt = 100 A/s,
IS = −0.77 A
2. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
78
1.1
V
ns
NTJD2152P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5 V to −2.6 V
VGS = −2.2 V
−2 V
−1.8 V
1
0.8
−1.6 V
0.6
0.4
−1.4 V
0.2
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
TJ = 25°C
0.5
VDS ≥ −10 V
1.2
1
0.8
0.6
TJ = 125°C
0.4
25°C
0.2
TJ = −55°C
0
2
4
6
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (AMPS)
1.4
VGS = −4.5 V
0.4
0.3
TJ = 125°C
TJ = 25°C
0.2
TJ = −55°C
0.1
0
0
0.8
0.6
0.4
1
−ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.5
TJ = 125°C
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.4
1
0.8
0.6
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
300
TJ = 25°C
ID = −0.7 A
VGS = −4.5 V
and −2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = −2.5 V
0.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.4
2.4
1.2
1
0.8
VGS = 0 V
240
Ciss
180
120
Coss
60
Crss
0.6
−50
−25
0
25
50
75
100
125
150
0
−8
−6
−4
−2
TJ, JUNCTION TEMPERATURE (°C)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
0
NTJD2152P
0.7
5
QG(TOT)
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = −0.6 A
TJ = 25°C
0
0
0.4
0.8
1.2
1.6
2
Qg, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
2.4
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD2152P
ORDERING INFORMATION
Package Type
Tape and Reel Size†
NTJD2152PT1
SOT−363
3000 / Tape & Reel
NTJD2152PT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT2
SOT−363
3000 / Tape & Reel
NTJD2152PT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT4
SOT−363
10,000 / Tape & Reel
NTJD2152PT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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5
NTJD2152P
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
M
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
SC−88/SC70−6
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTJD2152P/D
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