NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection http://onsemi.com Features • • • • • Leading –8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC−70−6 Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish V(BR)DSS RDS(on) TYP 0.22 @ −4.5 V 0.32 @ −2.5 V −8 V SOT−363 SC−88 (6 LEADS) Load Power switching DC−DC Conversion Li−Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 V Gate−to−Source Voltage VGS ±8.0 V ID −0.775 A TA = 25 °C Continuous Drain Current (Based on RJA) Steady State Power Dissipation (Based on RJA) Steady State TA = 25 °C Continuous Drain Current (Based on RJL) Steady State TA = 25 °C Power Dissipation (Based on RJL) Steady State TA = 85 °C PD W 0.27 0.14 ID −0.8 TA = 25 °C 6 D1 G1 2 5 G2 D2 3 4 S2 Top View TA = 85 °C 0.29 t ≤10 s IDM ±1.2 A TJ, TSTG −55 to 150 °C IS −0.775 TL 260 Continuous Source Current (Body Diode) MARKING DIAGRAM 6 TAD SC−88 (SOT−363) CASE 419B Style 26 W 0.55 PD Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 1 1 A −1.1 TA = 85 °C Operating Junction and Storage Temperature S1 −0.558 TA = 85 °C Pulsed Drain Current −0.775 A 0.51 @ −1.8 V Applications • • • • ID Max TA D = Device Code = Date Code PIN ASSIGNMENT 1 6 Source−1 Drain−1 A Gate−1 Gate−2 °C Drain−2 Source−2 Top View THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Junction−to−Ambient – Steady State RJA 400 460 Junction−to−Lead (Drain) – Steady State RJL 194 226 Unit ORDERING INFORMATION °C/W See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 2 1 Publication Order Number: NTJD2152/D NTJD2152P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 A −8.0 −10.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ −6.0 mV/°C OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −6.4 V 1.0 A Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V 10 A VGS(TH) VGS = VDS, ID = −250 A −1.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) ( ) Forward Transconductance gFS −0.45 −0.83 mV/ °C 2.2 VGS = −4.5 V, ID = −0.57 A 0.22 0.3 VGS = −2.5 V, ID = −0.48 A 0.32 0.46 VGS = −1.8 V, ID = −0.20 A 0.51 0.9 VGS = −4.0 V, ID = −0.57 A 2.0 S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = −8.0 80V 160 225 38 55 28 40 VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 06A 2.2 4.0 CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.5 Gate−to−Drain Charge QGD 0.5 pF nC 0.1 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = −4.5 V, VDD = −4.0 V, ID = −0.5 0 5 A, A RG = 8 8.0 0 ns 13 23 td(OFF) 50 tf 36 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = −0.23 0 23 A TJ = 25°C 0.76 TJ = 125°C 0.63 VGS = 0 V, dIS/dt = 100 A/s, IS = −0.77 A 2. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 78 1.1 V ns NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = −4.5 V to −2.6 V VGS = −2.2 V −2 V −1.8 V 1 0.8 −1.6 V 0.6 0.4 −1.4 V 0.2 −1.2 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () −ID, DRAIN CURRENT (AMPS) 1.2 1.4 TJ = 25°C 0.5 VDS ≥ −10 V 1.2 1 0.8 0.6 TJ = 125°C 0.4 25°C 0.2 TJ = −55°C 0 2 4 6 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 0.4 0.8 1.2 2 1.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () −ID, DRAIN CURRENT (AMPS) 1.4 VGS = −4.5 V 0.4 0.3 TJ = 125°C TJ = 25°C 0.2 TJ = −55°C 0.1 0 0 0.8 0.6 0.4 1 −ID, DRAIN CURRENT (AMPS) 0.2 1.2 1.4 0.5 TJ = 125°C TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.4 1 0.8 0.6 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 300 TJ = 25°C ID = −0.7 A VGS = −4.5 V and −2.5 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = −2.5 V 0.4 Figure 3. On−Resistance vs. Drain Current and Temperature 1.4 2.4 1.2 1 0.8 VGS = 0 V 240 Ciss 180 120 Coss 60 Crss 0.6 −50 −25 0 25 50 75 100 125 150 0 −8 −6 −4 −2 TJ, JUNCTION TEMPERATURE (°C) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 0 NTJD2152P 0.7 5 QG(TOT) −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 VGS 3 QGS 2 QGD 1 ID = −0.6 A TJ = 25°C 0 0 0.4 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 2.4 0 0.2 0.4 0.6 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJD2152P ORDERING INFORMATION Package Type Tape and Reel Size† NTJD2152PT1 SOT−363 3000 / Tape & Reel NTJD2152PT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD2152PT2 SOT−363 3000 / Tape & Reel NTJD2152PT2G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD2152PT4 SOT−363 10,000 / Tape & Reel NTJD2152PT4G SOT−363 (Pb−Free) 10,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJD2152P PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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