UTC DTA114T Digital transistors (built- in bias resistors) Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTA114T
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
„
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
„
EQUIVALENT CIRCUIT
*Pb-free plating product number:DTA114TL
„
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTA114T-AE3-R
DTA114TL-AE3-R
DTA114T-AL3-R
DTA114TL-AL3-R
DTA114T-AN3-R
DTA114TL-AN3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
DTA114TL-AE3-R
„
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
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Copyright © 2005 Unisonic Technologies Co., Ltd
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DTA114T
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATING
UNIT
-50
V
-50
V
-5
V
-100
mA
SOT-23
200
mW
Collector Power Dissipation
PC
SOT-323/SOT-523
150
mW
℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VCBO
VCEO
VEBO
IC
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
ICBO
IEBO
hFE
R1
fT
TEST CONDITIONS
IC=-50μA
IC=-1mA
IE=-50μA
IC=-10mA, IB=-1mA
VCB=-50V
VEB=-4V
VCE=-5V, IC=-1mA
VCE=-10V, IE=5mA, f=100MHz*
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-50
-50
-5
TYP
100
7
250
10
250
MAX UNIT
V
V
V
-0.3
V
-0.5
μA
-0.5
μA
600
13
kΩ
MHz
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DTA114T
Collector Saturation Voltage, VCE(SAT) (mV)
TYPICAL CHARACTERISTICS
DC Current Gain, hFE
■
PNP SILICON TRANSISTOR
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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