Transistors SMD Type NPN Transistors BC818 (KC818) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 High collector current. 0.55 For general AF applications. +0.1 1.3 -0.1 +0.1 2.4 -0.1 Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 High current gain. +0.05 0.1 -0.01 +0.1 0.97 -0.1 Low collector-emitter saturation voltage. 1.Base ● Complementary PNP type available(BC808) 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage V CBO 30 V Collector-emitter v oltage V CEO 25 V Emitter-base v oltage V EBO 5 V Collector current (DC) IC 800 mA mW power dissipation PD 300 Junction temperature Tj 150 Storage temperature T stg -65 to +150 +0.1 0.38 -0.1 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector to base breakdown voltage VCBO IC = 100u A,VBE = 0 30 V Collector to emitter breakdown voltage VCEO IC = 10 mA, IB = 0 25 V Emitter to base breakdown voltage VEBO IE = 100 uA, IC = 0 5 Collector cutoff current ICBO VCB =25 V, VBE= 0 100 nA Emitter cutoff current IEBO VEB =4 V, IC = 0 100 nA DC current gain * hFE IC =100 mA, VCE =1 V 100 IC =300 mA, VCE =1 V 60 V 630 Collector saturation voltage * VCE(sat) IC =500 mA, IB = 50 mA 0.7 Base emitter on voltage VBE(on) VCE=1V,IC=300mA 1.2 V Cob VCB=10V,f=1MHz 12 pF Output Capacitance Transition frequency * Pulsed: PW fT 350 us, duty cycle IC = 10 mA, VCE =5 V, f = 50 MHz 100 V MHz 2% Marking NO. Marking hFE BC818-16 6E 100 BC818-25 6F 250 160 BC818-40 6G 400 250 630 www.kexin.com.cn 1 Transistors SMD Type BC818 ■ Typical Characterisitics 2 www.kexin.com.cn (KC818) Transistors SMD Type BC818 (KC818) ■ Typical Characterisitics www.kexin.com.cn 3 Transistors SMD Type BC818 ■ Typical Characterisitics 4 www.kexin.com.cn (KC818)