TI1 LM4050QML Precision micropower shunt voltage reference Datasheet

LM4050QML
Precision Micropower Shunt Voltage Reference
General Description
Key Specifications
The LM4050QML precision voltage reference is available in
a 10 Lead Ceramic SOIC package. The LM4050QML's design eliminates the need for an external stabilizing capacitor
while ensuring stability with a capacitive load, thus making the
LM4050QML easy to use. The LM4050-2.5QML has a 60 μA
minimum and 15 mA maximum operating current. The
LM4050-5.0QML has a 74 μA minimum and 15 mA maximum
operating current.
The LM4050QML utilizes fuse and zener-zap reverse breakdown voltage trim during wafer sort to ensure that the prime
parts have an accuracy of better than ±0.1% at 25°C.
Bandgap reference temperature drift curvature correction and
low dynamic impedance ensure stable reverse breakdown
voltage accuracy over a wide range of operating temperatures and currents.
The LM4050QML operates over the temperature range of
-55°C to +125°C.
Features
■
■
■
■
■
Low Dose Rate Qualified
100 krad(Si)
SEFI Immune
SET Immune with 60μF CLOAD
CLOAD 0μF to 100μF
Fixed reverse breakdown voltage of 2.500V, 5.000V
LM4050-2.5QML
■
■
■
■
Output voltage tolerance IR = 100μA
■
■
■
■
Output voltage tolerance IR = 100μA
Low temperature coefficient
±0.1% @ 25°C
15 ppm/°C
50 μVrms(typ)
Low output noise
Wide operating current range
LM4050-5.0QML
Low temperature coefficient
60 μA to 15 mA
±0.1% @ 25°C
23 ppm/°C
100 μVrms(typ)
Low output noise
Wide operating current range
74 μA to 15 mA
Applications
■
■
■
■
■
Control Systems
Data Acquisition Systems
Instrumentation
Process Control
Energy Management
Ordering Information
NS Part Number
SMD Part Number
NS Package Number
Package Description
LM4050WG2.5RLQV
Low Dose Rate Qualified
5962R0923561VZA
100 krad(Si)
WG10A
10LD Ceramic SOIC
WG10A
10LD Ceramic SOIC
WG10A
10LD Ceramic SOIC
WG10A
10LD Ceramic SOIC
LM4050WG2.5-MPR
Pre-Flight Prototype
LM4050WG5.0RLQV
Low Dose Rate Qualified
5962R0923562VZA
100 krad(Si)
LM4050WG5.0-MPR
Pre-Flight Prototype
© 2012 Texas Instruments Incorporated
301041 SNVS627E
www.ti.com
LM4050QML Precision Micropower Shunt Voltage Reference
May 23, 2012
LM4050QML
Connection Diagram
10L Ceramic SOIC
30104101
Top View
See NS Package Number WG10A
Pin Descriptions
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Pin Number
Pin Name
Function
1
GND/NC
Ground or No Connect
2
GND/NC
Ground or No Connect
3
GND/NC
Ground or No Connect
4
GND/NC
Ground or No Connect
5
GND
Ground
6
GND/NC
Ground or No Connect
7
GND/NC
Ground or No Connect
8
GND/NC
Ground or No Connect
9
GND/NC
Ground or No Connect
10
VREF
Reference Voltage
2
Reverse Current
Forward Current
Power Dissipation (TA = 25°C) (Note 2)
10LD Ceramic SOIC Package
Lead Temperature
(Soldering, 10 seconds)
Ceramic SOIC
Storage Temperature
Package Weight (typical)
Ceramic SOIC
ESD Tolerance (Note 3)
Operating Ratings
-55°C ≤ TA ≤ +125°C
Temperature Range
20 mA
10 mA
467 mW
(Note 2)
Reverse Current
LM4050-2.5QML
60 μA to 15 mA
LM4050-5.0QML
74 μA to 15 mA
Package Thermal Resistance
260°C
-65°C to +150°C
Package
241mg
Class 2 (2000V)
θJA
θJA
(500LF/Min
(Still Air)
Air flow)
10L Ceramic SOIC
Package on 2 layer, 214°C/ W
1oz PCB
147°C/ W
θJC
20.87°C/ W
Quality Conformance Inspection
MIL-STD-883, Method 5005 - Group A
Subgroup
Description
Temp ( C)
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
12
Setting time at
+25
13
Setting time at
+125
14
Setting time at
-55
3
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LM4050QML
Absolute Maximum Ratings (Note 1)
LM4050QML
LM4050-2.5QML Electrical Characteristics
SMD: 5962R0923561
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.
Symbol
Parameter
Conditions
Reverse Breakdown Voltage
IR = 100 μA
Notes
Typical
(Note 4)
Min
2.500
Reverse Breakdown Voltage
Tolerance
IR = 100μA
±2.5
IR = 1mA
±3.75
IR = 10mA
±10
IR = 15mA
±13
IR = 60µA
±5
IR = 100μA
±5
IR = 1mA
±6.25
IR = 10mA
±12.5
IR = 15mA
±14
IR = 60µA
±4.5
IR = 100μA
±4.5
IR = 1mA
±5.75
IR = 10mA
±13
IR = 60µA
1
mV
2
mV
3
40.5
60
μA
1
65
μA
2, 3
±3
±15
±3
±16
±3
±18
Average Reverse Breakdown
Voltage Temperature
Coefficient
IR = 100μA
@ 25°C ≤ TA ≤ 125°C
IR = 10mA
±4
±20
IR = 15mA
±6
±22
IR = 60µA
±3
±18
±3
±19
±3.5
±22
(Note
8)
IR = 1mA
Average Reverse Breakdown
Voltage Temperature
Coefficient
IR = 100μA
@ −55°C ≤ TA ≤ 25°C
IR = 10mA
±10
±32
IR = 15mA
±15
±45
(Note
8)
IR = 1mA
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
ZR
Reverse Dynamic Impedance
VN
Output Noise Voltage
CLOAD
Load Capacitor
Stable Over Temperature
(Note
6)
60
VHYST
Thermal Hysteresis
ΔT = −55°C to 125°C
(Note
5)
1
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mV
±17.5
Minimum Operating Current
ΔVR/ΔT
Subgroups
±2.5
IR = 15mA
IRMIN
Units
V
IR = 60µA
VR
Max
2
ppm/°C
3
Ω
0.3
0.1 Hz ≤ f ≤ 10 Hz
9
μVpp
10 Hz ≤ f ≤ 10KHz
50
μVrms
4
0
100
µF
ppm
(Note 7)
Symbol
Parameter
Conditions
30 krad
50 krad
100 krad
Subgroups
+0.42%
+0.67%
+1.5%
1
IR = 60μA
VR
IR= 100μA
Reverse Breakdown Voltage
Tolerance
Max
IR = 1mA
IR = 10mA
IR = 15mA
Post Radiation Tempco
Symbol
(Note 8)
Parameter
Conditions
Average Reverse Breakdown
Voltage Temperature Coefficient
ΔVR/ΔT
Drift @ 25°C ≤ TA ≤ 125°C
Average Reverse Breakdown
Voltage Temperature Coefficient
Drift @ −55°C ≤ TA ≤ 25°C
TYPICALS
30 krad
50 krad
100 krad
Units
60μA ≤ IR ≤ 15mA
+41
+83
+144
ppm/°C
60μA ≤ IR ≤ 15mA
+46
+87
+166
ppm/°C
Operational Life Test Delta Parameters
This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the
electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-Group 5.
Symbol
VR
IRMIN
Parameter
Reverse Breakdonwn
Voltage Tolerance
Conditions
Min
Max
IR = 60µA
Note
-0.873
0.873
IR = 100µA
-0.873
0.873
IR = 1mA
-0.998
0.998
IR = 10mA
-3.93
3.93
IR = 15mA
-5
5
-0.623
0.623
Minimum Operating
Current
5
Units
Temp
mV
1
µA
1
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LM4050QML
Post Radiation @ 25°C
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.
LM4050QML
LM4050-5.0QML Electrical Characteristics
SMD: 5962R0923562
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.
Symbol
VR
Parameter
Conditions
Reverse Breakdown Voltage
IR = 100 μA
Reverse Breakdown Voltage
Tolerance
Notes
Typical
(Note 4)
Min
5.000
±5.0
IR = 100μA
±5.0
IR = 1mA
±8
IR = 10mA
±18
IR = 15mA
±20
IR = 74µA
±10
IR = 100μA
±10
IR = 1mA
±12
IR = 10mA
±22.5
IR = 15mA
±28
IR = 74µA
±9
IR = 100μA
±9
IR = 1mA
±11.5
IR = 10mA
±29
IR = 74µA
mV
3
74
μA
2, 3
±9
±23
±9
±25
±10
±28
±11
±35
IR = 15mA
±11
±40
IR = 74µA
±10
±25
±10
±29
±10
±34
(Note
8)
IR = 1mA
Average Reverse Breakdown
Voltage Temperature
Coefficient
IR = 100μA
@ −55°C ≤ TA ≤ 25°C
IR = 10mA
±15
±45
IR = 15mA
±20
±60
(Note
8)
IR = 1mA
2
ppm/°C
3
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.5
Ω
10 Hz ≤ f ≤ 10KHz
100
μVrms
CLOAD
Load Capacitor
Stable Over Temperature
(Note
6)
VHYST
Thermal Hysteresis
ΔT = -55°C to 125°C
(Note
5)
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2
1
IR = 10mA
Output Noise Voltage
mV
μA
@ 25°C ≤ TA ≤ 125°C
VN
1
70
IR = 100μA
Reverse Dynamic Impedance
mV
53
Average Reverse Breakdown
Voltage Temperature
Coefficient
ZR
Subgroups
±37
Minimum Operating Current
ΔVR/ΔT
Units
V
IR = 74µA
IR = 15mA
IRMIN
Max
6
60
20
0
100
µF
ppm
(Note 7)
Symbol
Parameter
Conditions
30 krad
50 krad
100 krad
Subgroups
+0.37%
+0.61%
+1.75%
1
IR = 74μA
VR
IR= 100μA
Reverse Breakdown Voltage
Tolerance
Max
IR = 1mA
IR = 10mA
IR = 15mA
Post Radiation Tempco
Symbol
(Note 8)
Parameter
Conditions
Average Reverse Breakdown
Voltage Temperature Coefficient
ΔVR/ΔT
Drift @ 25°C ≤ TA ≤ 125°C
Average Reverse Breakdown
Voltage Temperature Coefficient
Drift @ −55°C ≤ TA ≤ 25°C
TYPICALS
30 krad
50 krad
100 krad
Units
74μA ≤ IR ≤ 15mA
+87
+166
+387
ppm/°C
74μA ≤ IR ≤ 15mA
+96
+162
+343
ppm/°C
Operational Life Test Delta Parameters
This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the
electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-Group 5.
Symbol
Parameter
Conditions
Note
IR = 74µA
VR
IRMIN
Reverse Breakdonwn
Voltage Tolerance
Min
Max
−0.8
0.8
IR = 100µA
−0.8
0.8
IR = 1mA
−0.84
0.84
IR = 10mA
−1.6
1.6
IR = 15mA
−2.6
2.6
−0.623
0.623
Minimum Operating
Current
Units
Temp
mV
1
µA
1
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/θJA or the
number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board
mounted, is 214°C/W for the 10 Lead Ceramic SOIC package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
Note 4: Typicals are at TA = 25°C and represent most likely parametric norm.
Note 5: Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C measurement after cycling
to temperature +125°C.
Where: VHYST = Thermal hysteresis expressed in ppm
VR = Nominal preset output voltage
VR1 = VR before temperature fluctuation
VR2 = VR after temperature fluctuation.
Note 6: Capacitive load not required but improves SET stability. This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 7: Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table.
Note 8: Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table.
7
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LM4050QML
Post Radiation @ 25°C
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.
LM4050QML
Typical Performance Characteristics
Output Impedance vs Frequency
Output Impedance vs Frequency
30104110
30104111
Reverse Characteristics and
Minimum Operating Current
2.5V Thermal Hysteresis
30104129
30104112
5.0V Thermal Hysteresis
30104130
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8
LM4050QML
Typical Radiation Characteristics
2.5V Low Dose Rate Drift at 10 mrad(Si)/s
30104123
5V Low Dose Rate Drift at 10 mrad(Si)/s
30104124
9
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LM4050QML
Start-Up Characteristics
30104105
LM4050-2.5QML
RS = 30k
LM4050-5.0QML
RS = 30k
30104107
30104108
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10
LM4050QML
Functional Block Diagram
30104114
Applications Information
Radiation Environments
The LM4050QML is a precision micro-power curvature-corrected bandgap shunt voltage reference. The LM4050QML is
available in the 10 Lead Ceramic SOIC package. The
LM4050QML has been designed for stable operation without
the need of an external capacitor connected between the “+”
pin and the “−” pin. If, however, a bypass capacitor is used,
the LM4050QML remains stable. The LM4050-2.5QML has a
60 μA minimum and 15 mA maximum operating current. The
LM4050-5.0QML has a 74 μA minimum and 15 mA maximum
operating current.
The typical thermal hysteresis specification is defined as the
change in +25°C voltage measured after thermal cycling. The
device is thermal cycled to temperature -55°C and then measured at 25°C. Next the device is thermal cycled to temperature +125°C and again measured at 25°C. The resulting
VOUT delta shift between the 25°C measurements is thermal
hysteresis. Thermal hysteresis is common in precision references and is induced by thermal-mechanical package stress.
Changes in environmental storage temperature, operating
temperature and board mounting temperature are all factors
that can contribute to thermal hysteresis.
In a conventional shunt regulator application (Figure 1) , an
external series resistor (RS) is connected between the supply
voltage and the LM4050QML. RS determines the current that
flows through the load (IL) and the LM4050QML (IQ). Since
load current and supply voltage may vary, RS should be small
enough to supply at least the maximum guaranteed IRMIN
(spec. table) to the LM4050QML even when the supply voltage is at its minimum and the load current is at its maximum
value. When the supply voltage is at its maximum and IL is at
its minimum, RS should be large enough so that the current
flowing through the LM4050QML is less than 15 mA.
RS is determined by the supply voltage, (VS), the load and
operating current, (IL and IQ), and the LM4050QML's reverse
breakdown voltage, VR.
Careful consideration should be given to environmental conditions when using a product in a radiation environment.
TOTAL IONIZING DOSE
Radiation hardness assured (RHA) products are those part
numbers with a total ionizing dose (TID) level specified in the
Ordering Information table on the front page. Testing and
qualification of these products is done on a wafer level according to MIL-STD-883, Test Method 1019. Wafer level TID
data is available with lot shipments.
Testing and qualification is performed at the 30, 50 and 100
krad TID levels at a dose rate of 10 mrad/s, using a 1.5X
overtest at each TID level. For the 30 krad level units are
tested to 50 krad, for 50 krad units are tested to 80 krad and
for 100 krad units are tested to 150 krad, with all parameters
remaining inside the post irradiation test limits.
SINGLE EVENT EFFECTS (SEE)
One time single event effects characterization was performed
according to EIA/JEDEC Standard, EIA/JEDEC57.
A test report is available upon request.
SINGLE EVENT TRANSIENTS (SET)
With a 60 µF capacitor on the output, no single event transients were seen at the highest linear energy transfer (LET)
tested: 59 MeV-cm2/mg.
SET characterization with other capacitor values is in the SEE
report, available upon request.
SINGLE EVENT FUNCTIONAL INTERRUPT (SEFI)
No single event functional interrupts were detected to the
highest linear energy transfer (LET) tested: 100 MeV-cm2/mg.
11
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LM4050QML
Typical Applications
30104115
FIGURE 1. Shunt Regulator
30104120
FIGURE 2. The LM4050QML as a power supply and reference
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12
LM4050QML
30104119
FIGURE 3. The LM4050QML as a power supply and reference
The LM4050QML is a good choice as a power regulator for the DAC121S101QML or ADC128S102QML. The minimum resistor
value in the circuit of Figure 2 or Figure 3 should be chosen such that the maximum current through the LM4050QML does not
exceed its 15 mA rating. The conditions for maximum current include the input voltage at its maximum, the LM4050QML voltage
at its minimum, the resistor value at its minimum due to tolerance, and the DAC121S101QML or ADC128S102QML draws zero
current. The maximum resistor value must allow the LM4050QML to draw more than its minimum current for regulation plus the
maximum DAC121S101QML or ADC128S102QML current in full operation. The conditions for minimum current include the input
voltage at its minimum, the LM4050QML voltage at its maximum, the resistor value at its maximum due to tolerance, and the
DAC121S101QML or ADC128S102QML draws its maximum current. These conditions can be summarized as
R(min) = ( VIN(max) − VZ(min) / (IA(min) + IZ(max)
and
R(max) = ( VIN(min) − VZ(max) / (IA(max) + IZ(min)
where VZ(min) and VZ(max) are the nominal LM4050QML output voltages ± the LM4050QML output tolerance over temperature,
IZ(max) is the maximum allowable current through the LM4050QML, IZ(min) is the minimum current required by the LM4050QML
for proper regulation, IA(max) is the maximum DAC121S101QML or ADC128S102QML supply current, and IA(min) is the minimum
DAC121S101QML or ADC128S102QML supply current.
13
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LM4050QML
30104117
FIGURE 4. Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.
Nominal clamping voltage is ±11.5V (LM4050QML's reverse breakdown voltage +2 diode VF).
30104118
FIGURE 5. Protecting Op Amp input. The bounding voltage is ±4V with the LM4050-2.5QML
(LM4050QML's reverse breakdown voltage + 3 diode VF).
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14
LM4050QML
30104121
30104122
FIGURE 6. Precision 1 μA to 1 mA Current Sources
15
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LM4050QML
Revision History
Date Released
Revision
Section
Changes
A
Initial Release
New Product Low Dose Qualified LM4050WG2.5RLQV
Initial Release
01/20/2012
B
General Description,
Features, Key Specifications,
Ordering Table, Operating
Ratings, Package Thermal
Table, Electrical Section
General Description, Features, Key Specifications,
Ordering Table, Operating Ratings, Package Thermal
Table, Electrical Section — Added the 5.0 V option
information for all sections. Added new NSIDS
LM4050WG5.0RLQV and LM4050WG5.0–MPR Voltage
option to data sheet. Revision A will be Archived.
05/23/2012
C
Electrical Section
Electrical Section — Updated Delta Vr/Delta T for typical
limits for both the 2.5 and 5.0 versions. Revision B will be
Archived.
08/20/2010
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16
LM4050QML
Physical Dimensions inches (millimeters) unless otherwise noted
10 Lead Ceramic SOIC
NS Package Number WG10A
17
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LM4050QML Precision Micropower Shunt Voltage Reference
Notes
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