DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits ID max TA = +25°C RDS(ON) max 90mΩ @ VGS = -4.5V -3.1A 250mΩ @ VGS = -2.5V -1.8A -20V Description and Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Battery Charging Power Management Functions DC-DC Converters Terminals Connections: See Diagram Below Portable Power Adaptors Weight: 0.009 grams (Approximate) D SOT23 D G S G S Top View Top View Internal Schematic Ordering Information (Note 4) Notes: Part Number Case Packaging DMP2170U-7 SOT23 3,000/Tape & Reel DMP2170U-13 SOT23 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP2170U Document number: DS38558 Rev. 1 - 2 7U = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: D = 2016) M = Month (ex: 9 = September) YM P65 7U Mar 3 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D June 2016 © Diodes Incorporated DMP2170U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C Steady State TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Continuous Drain Current (Note 6) VGS = -4.5V ID IS IDM Value -20 ±12 -3.1 -2.5 -1.25 -13 Units V V Value 0.78 163 1.28 99 Unit W °C/W W °C/W -55 to +150 °C A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol PD RJA PD RJA TJ, TSTG Steady State Steady State Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(TH) -0.4 -1.01 -1.25 V RDS(ON) - 62 92 101 90 180 250 mΩ VSD - -0.8 -1.1 V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.5A VGS = -2.7V, ID = -3.0A VGS = -2.5V, ID = -2.6A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd - 303 46 37 16 3.6 7.8 0.6 1.1 5.4 18.3 16.2 13.6 5.5 1.23 - pF pF pF Ω nC nC nC nC ns ns ns ns ns nC tD(ON) tR tD(OFF) tF tRR QRR Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, ID = -1.5A VDD = -10V, VGS = -4.5V, ID = -3.5A, RG = 6Ω IS = -2.0A, dI/dt = -100A/μs IS = -2.0A, dI/dt = -100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2170U Document number: DS38558 Rev. 1 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMP2170U 10.0 10 VDS = -5V VGS = -3.0V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8.0 VGS = -2.5V 6.0 VGS = -4.5V VGS = -8.0V 4.0 VGS = -2.0V 6 4 TJ = 150oC 2 2.0 TJ = 125oC TJ = 25oC VGS = -1.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.16 0.14 VGS = -2.5V 0.12 0.1 0.08 0.06 VGS = -4.5V 0.04 0.8 3 0.02 0 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 ID = -3.5A 0.1 0.05 0 0 2 4 6 8 10 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) 12 Figure 4. Typical Transfer Characteristic 0.11 1.8 VGS = -4.5V TJ = RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = -55oC 0 0.0 0 TJ = 85oC 150oC 0.09 TJ = 125oC TJ = 85oC 0.07 TJ = 25oC 0.05 TJ = -55oC 1.6 VGS = -4.5V, ID = -3.5A 1.4 1.2 1 VGS = -2.5V, ID = -2.6A 0.8 0.6 0.03 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature DMP2170U Document number: DS38558 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature June 2016 © Diodes Incorporated 0.16 1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMP2170U 0.14 VGS = -2.5V, ID = -2.6A 0.12 0.1 0.08 0.06 VGS = -4.5V, ID = -3.5A 0.04 1.2 ID = -1mA 1 0.8 ID = -250µA 0.6 0.4 0.02 -50 -25 0 25 50 75 100 125 -50 150 0 25 50 75 100 125 150 1000 10 CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 8 6 4 TJ = 150oC 2 TJ = 125oC TJ = 85oC TJ = 25oC f = 1MHz Ciss 100 Coss Crss TJ = -55oC 10 0 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 5 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited PW = 100ms ID, DRAIN CURRENT (A) 8 6 VGS (V) 15 4 VDS = -10V, ID = -1.5A 10 2 4 6 Qg (nC) Figure 11. Gate Charge DMP2170U Document number: DS38558 Rev. 1 - 2 DC PW = 10s 0.1 0.01 0 PW = 1ms PW =100µs 1 2 0 PW = 10ms 8 4 of 7 www.diodes.com TJ(Max) = 150℃ TC = 25℃ PW = 1s Single Pulse DUT on 1*MRP Board VGS = -4.5V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 June 2016 © Diodes Incorporated DMP2170U 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.7 D=0.5 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 163℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP2170U Document number: DS38558 Rev. 1 - 2 5 of 7 www.diodes.com June 2016 © Diodes Incorporated DMP2170U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMP2170U Document number: DS38558 Rev. 1 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMP2170U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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