Infineon AUIRLU024N Automotive grade Datasheet

AUIRLR024N
AUIRLU024N
AUTOMOTIVE GRADE
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic-Level Gate Drive
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
HEXFET® Power MOSFET
VDSS
RDS(on)
Package Type
AUIRLU024N
I-Pak
AUIRLR024N
D-Pak
max.
0.065
ID
17A
D
D
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
55V
G
S
G
I-Pak
AUIRLU024N
D-Pak
AUIRLR024N
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
S
D
S
Source
Orderable Part Number
AUIRLU024N
AUIRLR024N
AUIRLR024NTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
12
72
45
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
RJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
Units
A
W
0.3
± 16
68
11
4.5
5.0
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
–––
3.3
50
110
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-29
AUIRLR/U024N
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.065
VGS = 10V, ID = 10A 
––– ––– 0.080  VGS = 5.0V, ID = 10A 
––– ––– 0.110
VGS = 4.0V, ID = 9.0A 
1.0
–––
2.0
V VDS = VGS, ID = 250µA
8.3
––– –––
S VDS = 25V, ID = 11A 
––– –––
25
VDS = 55 V, VGS = 0V
µA
––– ––– 250
VDS = 44V,VGS = 0V,TJ =150°C
––– ––– 100
VGS = 16V
nA
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.1
74
20
29
15
3.7
8.5
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
480
130
61
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
17
–––
–––
72
–––
–––
–––
–––
60
130
1.3
90
200
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = 11A
nC VDS = 44V
VGS = 5.0V, See Fig 6 and 13 
VDD = 28V
ID = 11A
ns
RG = 12VGS = 5.0V
RD = 2.4See Fig 10 
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5 
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 11A,VGS = 0V 
ns TJ = 25°C ,IF = 11A
nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 VDD = 25V, starting TJ = 25°C, L = 790µH, RG = 25, IAS = 11A, VGS =10V. (See Fig.12)
 ISD 11A, di/dt 290A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 300µs; duty cycle  2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .
Uses IRFZ24N data and test conditions.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2015-10-29
AUIRLR/U024N
100
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
2.5V
20µs PULSE WIDTH
T J = 25°C
0.1
0.1
1
10
A
10
2.5V
1
100
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
1
V DS = 15V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10
A
100
Fig. 2 Typical Output Characteristics
100
3
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
0.1
20µs PULSE WIDTH
T J = 175°C
0.1
0.1
VDS , Drain-to-Source Voltage (V)
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
A
I D = 18A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-10-29
AUIRLR/U024N
Ciss
600
400
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
800
Coss
200
Crss
0
1
10
100
I D = 11A
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12
16
20
A
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
8
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
4
A
2.0
100
10µs
100µs
10
TC = 25°C
TJ = 175°C
Single Pulse
1
1
1ms
10ms
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-10-29
AUIRLR/U024N
ID , Drain Current (A)
20
15
10
5
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PDM
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
0.01
0.00001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-29
AUIRLR/U024N
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
140
15V
TOP
120
BOTTOM
ID
4.5A
7.8A
11A
100
80
60
40
20
0
VDD = 25V
25
50
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
2015-10-29
AUIRLR/U024N
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
2015-10-29
AUIRLR/U024N
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
Part Number
AURLR024N
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-10-29
AUIRLR/U024N
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AURLU024N
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-10-29
AUIRLR/U024N
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
2015-10-29
AUIRLR/U024N
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D-Pak
MSL1
I-Pak
Class M2 (+/- 150V)†
AEC-Q101-002
Class H1A (+/- 500V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/29/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-10-29