RoHS MBR25100CT THRU MBR25200CT COMPLIANT 肖特基二极管SCHOTTKY Diodes ■特征 ■外形尺寸和印记 Features 耐正向浪涌电流能力高 High surge forward current capability ● 低功耗，大电流 Low Power loss, High efficiency ● Io 25.0A 100-200V ● VRRM Outline Dimensions and Mark ● TO-220AB .17(4.31) .131(3.34) .429(10.9) MAX .129(3.27) .087(2.22) .200(5.10) .159(4.04) .055(1.40) .045(1.14) .61(15.5) .571(14.5) PIN1 2 Applications ■用途 ● 快速整流用 High speed switching DIA 3 .126(3.19) .084(2.14) .176(4.46) .124(3.16) .576(14.62) .514(13.06) .037(0.94) .027(0.68) .121(3.07) .079(2.01) .025(0.64) .011(0.28) .121(3.07) .079(2.01) PIN1 ■极限值（绝对最大额定值） PIN2 CASE PIN3 Limiting Values（Absolute Maximum Rating） 参数名称 Item 符号 Symbol 单位 Unit 条件 Conditions 25100CT MBR 25150CT 反向重复峰值电压 Repetitive Peak Reverse Voltage VRRM V 平均整流输出电流 Average Rectified Output Current Io A 正弦半波60Hz，电阻负载，Tc(Fig.1) 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 25 正向（不重复）浪涌电流 Surge(Non-repetitive)Forward Current IFSM A 60HZ正弦波，一个周期，Ta=25℃ 60HZ sine wave, 1 cycle, Ta=25℃ 200 正向浪涌电流的平方对电流浪涌持 续 时间的积分值 Current Squared Time 100 1ms≤t＜8.3ms Tj=25℃,单个二极 管 A2s 1ms≤t＜8.3ms Tj=25℃,Rating I2t 25200CT 150 200 167 of per diode 贮存温度 Storage Temperature Tstg 结温 Junction Temperature ℃ Tj -55 ~ +150 ℃ 在正向直流条件下，没有施加反向压 降，通电≤1h（图示1）① IN DC Forward Mode-Forward Operations，without reverse bias, t ≤1 h (Fig. 1)① -55 ~ +150 ■电特性 （Ta=25℃ 除非另有规定） Electrical Characteristics（Ta=25℃ Unless otherwise specified） 参数名称 Item 符号 Symbol 正向峰值电压 VFM Peak Forward Voltage IRRM1 反向峰值电流 Peak Reverse Current IRRM2 热阻 Thermal Resistance RθJ-C 25100CT 最大值 Max MBR 25150CT 25200CT 0.85 0.90 0.95 测试条件 单位 Unit Test Condition V mA ℃/W I FM =12.5A VRM =VRRM Ta=25℃ Ta=100℃ 结和壳之间 Between junction and case 0.1 20 2.0 NOTE ■ 备注 ①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test. S-B127 Rev.1.1, 29-Nov-14 扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MBR25100CT THRU MBR25200CT 图2：耐正向浪涌电流曲线 FIG2:Surge Forward Current Capadility 图1：正向电流降额曲线 FIG1: Forward Current Derating Curve 35.0 IFSM(A) Io(A) ■ 特性曲线（典型） Characteristics(Typical) 30.0 200 150 25.0 20.0 TC measure point IN DC 15.0 8.3ms Single Half Since-Wave JEDEC Method 100 10.0 50 5.0 0 50 0 150 Tc(℃) 100 0 1 5 2 10 20 50 100 Number of Cycles at 60Hz IRRM(mA) IF(A) 图3：正向电压曲线 FIG3:Instantaneous Forward Voltage 60 40 图4：反向电流曲线 FIG4:Typical Reverse Characteristics 100 20 10 10 100V 150V 5.0 Tj=100℃ 200V 1.0 1.0 0.1 0.5 Tj=25℃ 0.2 0.1 Ta=25℃ 0 0.1 0.2 0.3 0.4 S-B127 Rev.1.1, 29-Nov-14 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF(V) 0.01 0 20 40 扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. 60 80 100 VRM(%) www.21yangjie.com