STMicroelectronics M48T35AY-10PC1 5.0 or 3.3v, 256 kbit (32 kb x8) timekeeperâ® sram Datasheet

M48T35AY
M48T35AV
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER® SRAM
FEATURES SUMMARY
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INTEGRATED, ULTRA LOW POWER SRAM,
REAL TIME CLOCK, POWER-FAIL
CONTROL CIRCUIT AND BATTERY
BYTEWIDE™ RAM-LIKE CLOCK ACCESS
BCD CODED YEAR, MONTH, DAY, DATE,
HOURS, MINUTES, AND SECONDS
BATTERY LOW FLAG (BOK)
FREQUENCY TEST OUTPUT FOR REAL
TIME CLOCK
AUTOMATIC POWER-FAIL CHIP
DESELECT AND WRITE PROTECTION
WRITE PROTECT VOLTAGES
(VPFD = Power-fail Deselect Voltage):
– M48T35AY: VCC = 4.5 to 5.5V
4.2V ≤ VPFD ≤ 4.5V
– M48T35AV: VCC = 3.0 to 3.6V
2.7V ≤ VPFD ≤ 3.0V
SELF-CONTAINED BATTERY AND
CRYSTAL IN THE CAPHAT™ DIP
PACKAGE
SOIC PACKAGE PROVIDES DIRECT
CONNECTION FOR A SNAPHAT®
HOUSING CONTAINING THE BATTERY
AND CRYSTAL
SNAPHAT® HOUSING (BATTERY AND
CRYSTAL) IS REPLACEABLE
PIN AND FUNCTION COMPATIBLE WITH
JEDEC STANDARD 32Kb x8 SRAMs
Figure 1. 28-pin, PCDIP CAPHAT™ Package
28
1
PCDIP28 (PC)
Battery/Crystal
CAPHAT
Figure 2. 28-pin SOIC Package
SNAPHAT (SH)
Battery/Crystal
28
1
SOH28 (MH)
April 2004
1/25
M48T35AY, M48T35AV
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. 28-pin, PCDIP CAPHAT™ Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 2. 28-pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3.
Table 1.
Figure 4.
Figure 5.
Figure 6.
Logic Diagram . . . . . . . . . . . . . . . . . . . . .
Signal Names . . . . . . . . . . . . . . . . . . . . .
DIP Connections . . . . . . . . . . . . . . . . . . .
SOIC Connections . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . .
.......
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.......
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.......
......
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......
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.....4
.....4
.....5
.....5
.....5
OPERATION MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 7. READ Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 3. READ Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
WRITE Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 8. WRITE Enable Controlled, WRITE Mode AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 9. Chip Enable Controlled, WRITE Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 4. WRITE Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Retention Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 10.Checking the BOK Flag Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
CLOCK OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Reading the Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Setting the Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Stopping and Starting the Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5. Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Calibrating the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Century Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11.Crystal Accuracy Across Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12.Clock Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
VCC Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 13.Supply Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 6. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 7. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . .
Figure 14.AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Table 8. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Table 9. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2/25
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. . . . 16
. . . . 16
. . . . 16
. . . . 17
M48T35AY, M48T35AV
Figure 15.Power Down/Up Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 10. Power Down/Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 11. Power Down/Up Trip Points DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 16.PCDIP28 – 28-pin Plastic DIP, battery CAPHAT™, Package Outline . . . . . . . . . . . . . . 19
Table 12. PCDIP28 – 28-pin Plastic DIP, battery CAPHAT™, Package Mechanical Data . . . . . . . 19
Figure 17.SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline. 20
Table 13. SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Pack. Mech. Data 20
Figure 18.SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Outline . . . . . . . 21
Table 14. SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Mech. Data. . . . 21
Figure 19.SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Outline . . . . . . 22
Table 15. SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Mech. Data. . . 22
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 16. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 17. SNAPHAT Battery Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 18. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3/25
M48T35AY, M48T35AV
SUMMARY DESCRIPTION
The M48T35AY/V TIMEKEEPER ® RAM is a 32Kb
x 8 non-volatile static RAM and real time clock.
The monolithic chip is available in two special
packages to provide a highly integrated battery
backed-up memory and real time clock solution.
The M48T35AY/V is a non-volatile pin and function equivalent to any JEDEC standard 32Kb x 8
SRAM. It also easily fits into many ROM, EPROM,
and EEPROM sockets, providing the non-volatility
of PROMs without any requirement for special
WRITE timing or limitations on the number of
WRITEs that can be performed.
The 28-pin, 600mil DIP CAPHAT™ houses the
M48T35AY/V silicon with a quartz crystal and a
long-life lithium button cell in a single package.
The 28-pin, 330mil SOIC provides sockets with
gold plated contacts at both ends for direct con-
nection to a separate SNAPHAT® housing containing the battery and crystal. The unique design
allows the SNAPHAT battery package to be
mounted on top of the SOIC package after the
completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal damage due to
the high temperatures required for device surfacemounting. The SNAPHAT housing is keyed to prevent reverse insertion.
The SOIC and battery/crystal packages are
shipped separately in plastic anti-static tubes or in
Tape & Reel form.
For the 28-lead SOIC, the battery/crystal package
(e.g. SNAPHAT) part number is “M4T28-BR12SH”
(see Table 17., page 23).
Figure 3. Logic Diagram
Table 1. Signal Names
VCC
A0-A14
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
WRITE Enable
E
VCC
Supply Voltage
G
VSS
Ground
15
8
A0-A14
W
DQ0-DQ7
M48T35AY
M48T35AV
VSS
4/25
AI02797B
M48T35AY, M48T35AV
Figure 4. DIP Connections
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
Figure 5. SOIC Connections
1
28
2
27
3
26
4
25
5
24
6
23
7 M48T35AY 22
8 M48T35AV 21
9
20
10
19
11
18
12
17
13
16
14
15
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7 M48T35AY
8 M48T35AV
9
10
11
12
13
14
AI02798B
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
AI02799
Figure 6. Block Diagram
OSCILLATOR AND
CLOCK CHAIN
8 x 8 BiPORT
SRAM ARRAY
32,768 Hz
CRYSTAL
A0-A14
POWER
32,760 x 8
SRAM ARRAY
LITHIUM
CELL
DQ0-DQ7
E
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
VCC
W
VPFD
G
VSS
AI01623
5/25
M48T35AY, M48T35AV
OPERATION MODES
As Figure 6., page 5 shows, the static memory array and the quartz controlled clock oscillator of the
M48T35AY/V are integrated on one silicon chip.
The two circuits are interconnected at the upper
eight memory locations to provide user accessible
BYTEWIDE™ clock information in the bytes with
addresses 7FF8h-7FFFh.
The clock locations contain the year, month, date,
day, hour, minute, and second in 24 hour BCD format. Corrections for 28, 29 (leap year - valid until
2100), 30, and 31 day months are made automatically. Byte 7FF8h is the clock control register. This
byte controls user access to the clock information
and also stores the clock calibration setting.
The eight clock bytes are not the actual clock
counters themselves; they are memory locations
consisting of BiPORT™ READ/WRITE memory
cells. The M48T35AY/V includes a clock control
circuit which updates the clock bytes with current
information once per second. The information can
be accessed by the user in the same manner as
any other location in the static memory array.
The M48T35AY/V also has its own Power-fail Detect circuit. The control circuitry constantly monitors the single 3V supply for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable system operation brought on by low VCC. As VCC falls
below the Battery Back-up Switchover Voltage
(VSO), the control circuitry connects the battery
which maintains data and clock operation until valid power returns.
Table 2. Operating Modes
Mode
VCC
Deselect
WRITE
READ
4.5 to 5.5V
or
3.0 to 3.6V
READ
E
G
W
DQ0-DQ7
Power
VIH
X
X
High Z
Standby
VIL
X
VIL
DIN
Active
VIL
VIL
VIH
DOUT
Active
VIL
VIH
VIH
High Z
Active
Deselect
VSO to VPFD (min)(1)
X
X
X
High Z
CMOS Standby
Deselect
≤ VSO(1)
X
X
X
High Z
Battery Back-up Mode
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
1. See Table 11., page 18 for details.
6/25
M48T35AY, M48T35AV
READ Mode
The M48T35AY/V is in the READ Mode whenever
W (WRITE Enable) is high and E (Chip Enable) is
low. The unique address specified by the 15 address inputs defines which one of the 32,768 bytes
of data is to be accessed. Valid data will be available at the Data I/O pins within Address Access
time (tAVQV) after the last address input signal is
stable, providing that the E and G access times
are also satisfied.
If the E and G access times are not met, valid data
will be available after the latter of the Chip Enable
Access time (tELQV) or Output Enable Access time
(tGLQV).
The state of the eight three-state Data I/O signals
is controlled by E and G. If the outputs are activated before tAVQV, the data lines will be driven to an
indeterminate state until tAVQV. If the Address Inputs are changed while E and G remain active,
output data will remain valid for Output Data Hold
time (tAXQX) but will go indeterminate until the next
Address Access.
Figure 7. READ Mode AC Waveforms
tAVAV
A0-A14
VALID
tAVQV
tAXQX
tELQV
tEHQZ
E
tELQX
tGLQV
tGHQZ
G
tGLQX
DQ0-DQ7
VALID
AI00925
Note: WRITE Enable (W) = High.
Table 3. READ Mode AC Characteristics
Symbol
M48T35AY
M48T35AV
–70
–100
(1)
Parameter
Min
Max
Min
Unit
Max
tAVAV
READ Cycle Time
tAVQV
Address Valid to Output Valid
70
100
ns
tELQV
Chip Enable Low to Output Valid
70
100
ns
tGLQV
Output Enable Low to Output Valid
35
50
ns
(2)
70
100
ns
Chip Enable Low to Output Transition
5
10
ns
tGLQX(2)
Output Enable Low to Output Transition
5
5
ns
tEHQZ(2)
Chip Enable High to Output Hi-Z
25
50
ns
tGHQZ(2)
Output Enable High to Output Hi-Z
25
40
ns
tELQX
tAXQX
Address Transition to Output Transition
10
10
ns
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. CL = 5pF.
7/25
M48T35AY, M48T35AV
WRITE Mode
The M48T35AY/V is in the WRITE Mode whenever W and E are low. The start of a WRITE is referenced from the latter occurring falling edge of W or
E. A WRITE is terminated by the earlier rising
edge of W or E. The addresses must be held valid
throughout the cycle. E or W must return high for
a minimum of tEHAX from Chip Enable or tWHAX
from WRITE Enable prior to the initiation of anoth-
er READ or WRITE cycle. Data-in must be valid tDVWH prior to the end of WRITE and remain valid for
tWHDX afterward. G should be kept high during
WRITE cycles to avoid bus contention; however, if
the output bus has been activated by a low on E
and G, a low on W will disable the outputs tWLQZ
after W falls.
Figure 8. WRITE Enable Controlled, WRITE Mode AC Waveform
tAVAV
A0-A14
VALID
tAVWH
tWHAX
tAVEL
E
tWLWH
tAVWL
W
tWHQX
tWLQZ
tWHDX
DQ0-DQ7
DATA INPUT
tDVWH
AI00926
Figure 9. Chip Enable Controlled, WRITE Mode AC Waveforms
tAVAV
VALID
A0-A14
tAVEH
tAVEL
tELEH
tEHAX
E
tAVWL
W
tEHDX
DQ0-DQ7
DATA INPUT
tDVEH
AI00927
8/25
M48T35AY, M48T35AV
Table 4. WRITE Mode AC Characteristics
Symbol
M48T35AY
M48T35AV
–70
–100
(1)
Parameter
Min
Max
Min
Unit
Max
tAVAV
WRITE Cycle Time
70
100
ns
tAVWL
Address Valid to WRITE Enable Low
0
0
ns
tAVEL
Address Valid to Chip Enable Low
0
0
ns
tWLWH
WRITE Enable Pulse Width
50
80
ns
tELEH
Chip Enable Low to Chip Enable High
55
80
ns
tWHAX
WRITE Enable High to Address Transition
0
10
ns
tEHAX
Chip Enable High to Address Transition
0
10
ns
tDVWH
Input Valid to WRITE Enable High
30
50
ns
tDVEH
Input Valid to Chip Enable High
30
50
ns
tWHDX
WRITE Enable High to Input Transition
5
5
ns
tEHDX
Chip Enable High to Input Transition
5
5
ns
tWLQZ(2,3)
WRITE Enable Low to Output Hi-Z
25
50
ns
tAVWH
Address Valid to WRITE Enable High
60
80
ns
tAVEH
Address Valid to Chip Enable High
60
80
ns
WRITE Enable High to Output Transition
5
10
ns
tWHQX(2,3)
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. CL = 5pF.
3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
9/25
M48T35AY, M48T35AV
Data Retention Mode
With valid VCC applied, the M48T35AY/V operates
as a conventional BYTEWIDE™ static RAM.
Should the supply voltage decay, the RAM will automatically power-fail deselect, write protecting itself when VCC falls within the VPFD (max), VPFD
(min) window (see Figure 15, Table 10, and Table
11., page 18). All outputs become high impedance, and all inputs are treated as “don't care.”
Note: A power failure during a WRITE cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the user can be
assured the memory will be in a write protected
state, provided the VCC fall time is not less than tF.
The M48T35AY/V may respond to transient noise
spikes on VCC that reach into the deselect window
during the time the device is sampling VCC. Therefore, decoupling of the power supply lines is recommended.
When VCC drops below VSO , the control circuit
switches power to the internal battery which preserves data and powers the clock. The internal
button cell will maintain data in the M48T35AY/V
for an accumulated period of at least 7 years when
VCC is less than VSO. As system power returns
and VCC rises above VSO, the battery is disconnected and the power supply is switched to external VCC. Write protection continues until VCC
reaches VPFD (min) plus trec (min). E should be
kept high as VCC rises past VPFD (min) to prevent
inadvertent WRITE cycles prior to processor stabilization. Normal RAM operation can resume trec after VCC exceeds VPFD (max).
Also, as VCC rises, the battery voltage is checked.
If the voltage is less than approximately 2.5V, an
internal Battery Not OK (BOK) flag will be set. The
BOK flag can be checked after power up. If the
BOK flag is set, the first WRITE attempted will be
blocked. The flag is automatically cleared after the
first WRITE, and normal RAM operation resumes.
Figure 10 illustrates how a BOK check routine
could be structured.
For more information on Battery Storage Life refer
to the Application Note AN1012.
10/25
Figure 10. Checking the BOK Flag Status
POWER-UP
READ DATA
AT ANY ADDRESS
WRITE DATA
COMPLEMENT BACK
TO SAME ADDRESS
READ DATA
AT SAME
ADDRESS AGAIN
IS DATA
COMPLEMENT
OF FIRST
READ?
(BATTERY OK)
YES
NO (BATTERY LOW)
NOTIFY SYSTEM
OF LOW BATTERY
(DATA MAY BE
CORRUPTED)
WRITE ORIGINAL
DATA BACK TO
SAME ADDRESS
CONTINUE
AI00607
M48T35AY, M48T35AV
CLOCK OPERATIONS
Reading the Clock
Updates to the TIMEKEEPER® registers (see Table 5) should be halted before clock data is read to
prevent reading data in transition. The BiPORT™
TIMEKEEPER cells in the RAM array are only
data registers and not the actual clock counters,
so updating the registers can be halted without
disturbing the clock itself.
Updating is halted when a '1' is written to the
READ Bit, D6 in the Control Register 7FF8h. As
long as a '1' remains in that position, updating is
halted.
After a halt is issued, the registers reflect the
count; that is, the day, date, and the time that were
current at the moment the halt command was issued.
All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an update in
progress. Updating is within a second after the bit
is reset to a '0.'
Setting the Clock
Bit D7 of the Control Register 7FF8h is the WRITE
Bit. Setting the WRITE Bit to a '1,' like the READ
Bit, halts updates to the TIMEKEEPER® registers.
The user can then load them with the correct day,
date, and time data in 24 hour BCD format (see
Table 5). Resetting the WRITE Bit to a '0' then
transfers the values of all time registers 7FF9h7FFFh to the actual TIMEKEEPER counters and
allows normal operation to resume. The FT Bit and
the bits marked as '0' in Table 5 must be written to
'0' to allow for normal TIMEKEEPER and RAM operation. After the WRITE Bit is reset, the next clock
update will occur within one second.
See the Application Note AN923, “TIMEKEEPER ®
Rolling Into the 21 st Century” for information on
Century Rollover.
Stopping and Starting the Oscillator
The oscillator may be stopped at any time. If the
device is going to spend a significant amount of
time on the shelf, the oscillator can be turned off to
minimize current drain on the battery. The STOP
Bit is the MSB of the seconds register. Setting it to
a '1' stops the oscillator. The M48T35AY/V is
shipped from STMicroelectronics with the STOP
Bit set to a '1.' When reset to a '0,' the M48T35AY/
V oscillator starts within 1 second.
Table 5. Register Map
Data
Address
D7
7FFFh
D6
D5
D4
D3
10 Years
10 M.
D1
D0
Function/Range
BCD Format
Year
Year
00-99
Month
Month
01-12
Date
Date
01-31
Century/Day
00-01/01-07
Hours
Hours
00-23
7FFEh
0
0
7FFDh
0
0
7FFCh
0
FT
7FFBh
0
0
7FFAh
0
10 Minutes
Minutes
Minutes
00-59
7FF9h
ST
10 Seconds
Seconds
Seconds
00-59
7FF8h
W
R
0
D2
10 Date
CEB
CB
0
10 Hours
S
Keys: S = SIGN Bit
FT = FREQUENCY TEST Bit (Must be set to '0' upon power
for normal operation)
R = READ Bit
W = WRITE Bit
Day
Calibration
Control
ST = STOP Bit
0 = Must be set to '0'
CEB = Century Enable Bit
CB = Century Bit
Note: When CEB is set to '1,' CB will toggle from '0' to '1' or from '1' to '0' at the turn of the century (dependent upon the initial value set).
When CEB is set to '0,' CB will not toggle. The WRITE Bit does not need to be set to write to CEB.
11/25
M48T35AY, M48T35AV
Calibrating the Clock
The M48T35AY/V is driven by a quartz-controlled
oscillator with a nominal frequency of 32,768 Hz.
The devices are tested not to exceed 35 ppm
(parts per million) oscillator frequency error at
25°C, which equates to about ±1.53 minutes per
month. With the calibration bits properly set, the
accuracy of each M48T35AY/V improves to better
than +1/–2 ppm at 25°C.
The oscillation rate of any crystal changes with
temperature (see Figure 11., page 13). Most clock
chips compensate for crystal frequency and temperature shift error with cumbersome “trim” capacitors. The M48T35AY/V design, however, employs
periodic counter correction. The calibration circuit
adds or subtracts counts from the oscillator divider
circuit at the divide by 256 stage, as shown in Figure 12., page 13. The number of times pulses are
blanked (subtracted, negative calibration) or split
(added, positive calibration) depends upon the
value loaded into the five calibration bits found in
the Control Register. Adding counts speeds the
clock up, subtracting counts slows the clock down.
The Calibration Byte occupies the five lower order
bits (D4-D0) in the Control Register 7FF8h. These
bits can be set to represent any value between 0
and 31 in binary form. Bit D5 is the Sign Bit; '1' indicates positive calibration, '0' indicates negative
calibration. Calibration occurs within a 64 minute
cycle. The first 62 minutes in the cycle may, once
per minute, have one second either shortened by
128 or lengthened by 256 oscillator cycles. If a binary '1' is loaded into the register, only the first 2
minutes in the 64 minute cycle will be modified; if
a binary 6 is loaded, the first 12 will be affected,
and so on.
Therefore, each calibration step has the effect of
adding 512 or subtracting 256 oscillator cycles for
every 125,829,120 actual oscillator cycles, that is
+4.068 or –2.034 ppm of adjustment per calibration step in the calibration register. Assuming that
the oscillator is in fact running at exactly 32,768
Hz, each of the 31 increments in the Calibration
Byte would represent +10.7 or –5.35 seconds per
12/25
month which corresponds to a total range of +5.5
or –2.75 minutes per month.
Two methods are available for ascertaining how
much calibration a given M48T35AY/V may require. The first involves simply setting the clock,
letting it run for a month and comparing it to a
known accurate reference (like WWV broadcasts).
While that may seem crude, it allows the designer
to give the end user the ability to calibrate his clock
as his environment may require, even after the final product is packaged in a non-user serviceable
enclosure.
The second approach is better suited to a manufacturing environment, and involves the use of
some test equipment. When the Frequency Test
(FT) Bit, the seventh-most significant bit in the Day
Register is set to a '1,' and D7 of the Seconds Register is a '0' (Oscillator Running), DQ0 will toggle at
512 Hz during a READ of the Seconds Register.
Any deviation from 512 Hz indicates the degree
and direction of oscillator frequency shift at the test
temperature. For example, a reading of 512.01024
Hz would indicate a +20 ppm oscillator frequency
error, requiring a –10 (WR001010) to be loaded
into the Calibration Byte for correction.
Note: Setting or changing the Calibration Byte
does not affect the Frequency Test output frequency.
The FT Bit MUST be reset to '0' for normal clock
operations to resume. The FT Bit is automatically
Reset on power-down.
For more information on calibration, see Application Note AN934, “TIMEKEEPER® Calibration.”
Century Bit
Bit D5 and D4 of Clock Register 7FFCh contain
the CENTURY ENABLE Bit (CEB) and the CENTURY Bit (CB). Setting CEB to a '1' will cause CB
to toggle, either from a '0' to '1' or from '1' to '0' at
the turn of the century (depending upon its initial
state). If CEB is set to a '0,' CB will not toggle.
Note: The WRITE Bit must be set in order to write
to the CENTURY Bit.
M48T35AY, M48T35AV
Figure 11. Crystal Accuracy Across Temperature
ppm
20
0
-20
-40
∆F = -0.038 ppm (T - T )2 ± 10%
0
F
C2
-60
T0 = 25 °C
-80
-100
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
°C
AI02124
Figure 12. Clock Calibration
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
AI00594B
13/25
M48T35AY, M48T35AV
VCC Noise And Negative Going Transients
ICC transients, including those produced by output
switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1µF (as shown in Figure 13) is
recommended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to connect a schottky diode from VCC to VSS (cathode
connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
14/25
Figure 13. Supply Voltage Protection
VCC
VCC
0.1µF
DEVICE
VSS
AI02169
M48T35AY, M48T35AV
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other relevant quality documents.
Table 6. Absolute Maximum Ratings
Symbol
TA
TSTG
TSLD(1,2,3)
Parameter
Value
Unit
Grade 1
0 to 70
°C
Grade 6
–40 to 85
°C
–40 to 85
°C
260
°C
M48T35AY
–0.3 to 7
V
M48T35AV
–0.3 to 4.6
V
M48T35AY
–0.3 to 7
V
M48T35AV
–0.3 to 4.6
V
Ambient Operating Temperature
Storage Temperature (VCC Off, Oscillator Off)
Lead Solder Temperature for 10 seconds
VIO
Input or Output Voltages
VCC
Supply Voltage
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. For DIP package: Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer
than 30 seconds).
2. For SO package, standard (SnPb) lead finish: Reflow at peak temperature of 225°C (total thermal budget not to exceed 180°C for
between 90 to 150 seconds).
3. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260°C (total thermal budget not to exceed 245°C
for greater than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
15/25
M48T35AY, M48T35AV
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. Designers should check that the operating conditions
in their projects match the measurement conditions when using the quoted parameters.
Table 7. Operating and AC Measurement Conditions
Parameter
M48T35AY
M48T35AV
Unit
4.5 to 5.5
3.0 to 3.6
V
Grade 1
0 to 70
0 to 70
°C
Grade 6
–40 to 85
–40 to 85
Load Capacitance (CL)
100
50
pF
Input Rise and Fall Times
≤5
≤5
ns
0 to 3
0 to 3
V
1.5
1.5
V
Supply Voltage (VCC)
Ambient Operating Temperature (TA)
Input Pulse Voltages
Input and Output Timing Ref. Voltages
Note: Output Hi-Z is defined as the point where data is no longer driven.
Figure 14. AC Measurement Load Circuit
645Ω
DEVICE
UNDER
TEST
CL = 100pF
(or 5pF)
CL includes JIG capacitance
1.75V
AI02586
Note: 50pF for M48T35AV.
Table 8. Capacitance
Symbol
CIN
COUT(3)
Parameter(1,2)
Min
Max
Unit
Input Capacitance
10
pF
Output Capacitance
10
pF
Note: 1. Effective capacitance measured with power supply at 5V; sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
16/25
M48T35AY, M48T35AV
Table 9. DC Characteristics
Symbol
Parameter
Test Condition
M48T35AY
M48T35AV
–70
–100
(1)
Min
ILI
ILO(2)
Input Leakage Current
Output Leakage Current
Max
Min
Unit
Max
0V ≤ VIN ≤ VCC
±1
±1
µA
0V ≤ VOUT ≤ VCC
±1
±1
µA
Outputs open
50
30
mA
ICC
Supply Current
ICC1
Supply Current (Standby)
TTL
E = VIH
3
2
mA
ICC2
Supply Current (Standby)
CMOS
E = VCC – 0.2V
3
2
mA
VIL(3)
Input Low Voltage
–0.3
0.8
–0.3
0.8
V
VIH
Input High Voltage
2.2
VCC + 0.3
2.2
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage
IOH = –1mA
0.4
2.4
2.4
V
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. Outputs deselected.
3. Negative spikes of –1V allowed for up to 10ns once per Cycle.
17/25
M48T35AY, M48T35AV
Figure 15. Power Down/Up Mode AC Waveforms
VCC
VPFD (max)
VPFD (min)
VSO
tF
tR
tFB
tRB
tDR
tPD
INPUTS
trec
DON'T CARE
RECOGNIZED
RECOGNIZED
HIGH-Z
OUTPUTS
VALID
VALID
(PER CONTROL INPUT)
(PER CONTROL INPUT)
AI01168C
Table 10. Power Down/Up AC Characteristics
Parameter(1)
Symbol
Min
tPD
E or W at VIH before Power Down
tF(2)
VPFD (max) to VPFD (min) VCC Fall Time
tFB(3)
VPFD (min) to VSS VCC Fall Time
Max
Unit
0
µs
300
µs
M48T35AY
10
µs
M48T35AV
150
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1
µs
trec(4)
VPFD (max) to Inputs Recognized
40
200
ms
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. trec (min) = 20ms for industrial temperature Grade 6 device.
Table 11. Power Down/Up Trip Points DC Characteristics
Symbol
Parameter(1,2)
VPFD
Power-fail Deselect Voltage
VSO
Battery Back-up Switchover Voltage
tDR
(5)
Note: 1.
2.
3.
4.
5.
18/25
Min
Typ
Max
Unit
M48T35AY
4.2
4.35
4.5
V
M48T35AV
2.7
2.9
3.0
V
M48T35AY
3.0
V
M48T35AV
VPFD –100mV
V
Grade 1
10(3)
YEARS
Grade 6
10(4)
YEARS
Expected Data Retention Time
Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
All voltages referenced to VSS.
CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).
Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - Grade 6 device).
At 25°C, VCC = 0V.
M48T35AY, M48T35AV
PACKAGE MECHANICAL INFORMATION
Figure 16. PCDIP28 – 28-pin Plastic DIP, battery CAPHAT™, Package Outline
A2
A1
B1
B
A
L
C
e1
eA
e3
D
N
E
1
PCDIP
Note: Drawing is not to scale.
Table 12. PCDIP28 – 28-pin Plastic DIP, battery CAPHAT™, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
8.89
A1
Typ
Min
Max
9.65
0.350
0.380
0.38
0.76
0.015
0.030
A2
8.38
8.89
0.330
0.350
B
0.38
0.53
0.015
0.021
B1
1.14
1.78
0.045
0.070
C
0.20
0.31
0.008
0.012
D
39.37
39.88
1.550
1.570
E
17.83
18.34
0.702
0.722
e1
2.29
2.79
0.090
0.110
e3
29.72
36.32
1.170
1.430
eA
15.24
16.00
0.600
0.630
L
3.05
3.81
0.120
0.150
N
28
28
19/25
M48T35AY, M48T35AV
Figure 17. SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline
A2
A
C
B
eB
e
CP
D
N
E
H
A1
α
L
1
SOH-A
Note: Drawing is not to scale.
Table 13. SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Pack. Mech. Data
mm
inches
Symb
Typ
Min
A
Typ
Min
3.05
Max
0.120
A1
0.05
0.36
0.002
0.014
A2
2.34
2.69
0.092
0.106
B
0.36
0.51
0.014
0.020
C
0.15
0.32
0.006
0.012
D
17.71
18.49
0.697
0.728
E
8.23
8.89
0.324
0.350
–
–
–
–
eB
3.20
3.61
0.126
0.142
H
11.51
12.70
0.453
0.500
L
0.41
1.27
0.016
0.050
α
0°
8°
0°
8°
N
28
e
CP
20/25
Max
1.27
0.050
28
0.10
0.004
M48T35AY, M48T35AV
Figure 18. SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Outline
A1
eA
A2
A3
A
B
L
eB
D
E
SHTK-A
Note: Drawing is not to scale.
Table 14. SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Mech. Data
mm
inches
Symb
Typ
Min
A
Max
Typ
Min
9.78
Max
0.385
A1
6.73
7.24
0.265
0.285
A2
6.48
6.99
0.255
0.275
A3
0.38
0.015
B
0.46
0.56
0.018
0.022
D
21.21
21.84
0.835
0.860
E
14.22
14.99
0.560
0.590
eA
15.55
15.95
0.612
0.628
eB
3.20
3.61
0.126
0.142
L
2.03
2.29
0.080
0.090
21/25
M48T35AY, M48T35AV
Figure 19. SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Outline
A1
eA
A2
A3
A
B
L
eB
D
E
SHTK-A
Note: Drawing is not to scale.
Table 15. SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Mech. Data
mm
inches
Symb
Typ
Min
A
Typ
Min
10.54
Max
0.415
A1
8.00
8.51
0.315
0.335
A2
7.24
8.00
0.285
0.315
A3
22/25
Max
0.38
0.015
B
0.46
0.56
0.018
0.022
D
21.21
21.84
0.835
0.860
E
17.27
18.03
0.680
0.710
eA
15.55
15.95
0.612
0.628
eB
3.20
3.61
0.126
0.142
L
2.03
2.29
0.080
0.090
M48T35AY, M48T35AV
PART NUMBERING
Table 16. Ordering Information Scheme
Example:
M48T
35AY
–70
MH
1
E
Device Type
M48T
Supply Voltage and Write Protect Voltage
35AY = VCC = 4.5 to 5.5V; VPFD = 4.2 to 4.5V
35AV = VCC = 3.0 to 3.6V; VPFD = 2.7 to 3.0V
Speed
–70 = 70ns (35AY)
–10 = 100ns (35AV)
Package
PC = PCDIP28
MH(1) = SOH28
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C(2)
Shipping Method
For SOH28:
blank = Tubes (Not for New Design - Use E)
E = Lead-free Package (ECO
PACK®), Tubes
F = Lead-free Package (ECO
PACK®), Tape & Reel
TR = Tape & Reel (Not for New Design - Use F)
For PCDIP28:
blank = Tubes
Note: 1. The SOIC package (SOH28) requires the SNAPHAT® battery package which is ordered separately under the part number “M4TXXBR12SH” in plastic tube or “M4TXX-BR12SHTR” in Tape & Reel form (see Table 17).
2. Available in SOIC package only.
Caution: Do not place the SNAPHAT battery package “M4TXX-BR12SH” in conductive foam as it will drain the lithium button-cell battery.
For other options, or for more information on any aspect of this device, please contact the ST Sales Office
nearest you.
Table 17. SNAPHAT Battery Table
Part Number
Description
Package
M4T28-BR12SH
Lithium Battery (48mAh) SNAPHAT
SH
M4T32-BR12SH
Lithium Battery (120mAh) SNAPHAT
SH
23/25
M48T35AY, M48T35AV
REVISION HISTORY
Table 18. Document Revision History
Date
Rev. #
November 1999
1.0
First Issue
21-Apr-00
2.0
From Preliminary Data to Data Sheet
29-May-00
2.1
tFB change (Table 10)
20-Jul-01
3.0
Reformatted; temp./voltage info. added to tables (Table 8, 9, 3, 4, 10, 11); add Century
Bit text
20-May-02
3.1
Modify reflow time and temperature footnotes (Table 6)
31-Mar-03
4.0
v2.2 template applied; data retention condition updated (Table 11)
01-Apr-04
5.0
Reformatted; updated with Lead-free package information (Table 6, 16)
24/25
Revision Details
M48T35AY, M48T35AV
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved
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25/25
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