MJD2955,
NJVMJD2955T4G(PNP)
MJD3055,
NJVMJD3055T4G(NPN)
Complementary Power
Transistors
http://onsemi.com
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC
= 500 mAdc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Packages*
DPAK
CASE 369C
STYLE 1
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J
xx55G
DPAK
A
Y
WW
Jxx55
G
AYWW
J
xx55G
IPAK
= Assembly Location
= Year
= Work Week
= Device Code
x = 29 or 30
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 12
1
Publication Order Number:
MJD2955/D
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Max
Unit
VCEO
60
Vdc
Collector−Base Voltage
VCB
70
Vdc
Emitter−Base Voltage
VEB
5
Vdc
IC
10
Adc
IB
6
Adc
20
0.16
W
W/C
1.75
0.014
W
W/C
−55 to +150
C
Collector Current
Base Current
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD{
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD
Operating and Storage Junction Temperature Range
TJ, Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
6.25
C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
71.4
C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎ
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ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
−
−
50
−
−
0.02
2
−
−
0.02
2
−
0.5
20
5
100
−
−
−
1.1
8
−
1.8
2
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
http://onsemi.com
2
MHz
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD2955G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD2955−1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD2955T4G
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
NJVMJD2955T4G
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
MJD3055G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD3055T4G
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
NJVMJD3055T4G
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (C)
Figure 1. Power Derating
2
500
100
VCE = 2 V
0.7
0.5
25C
-55C
50
30
20
0.02
0.05
0.1
0.5
0.2
1
2
5
10
0
0.1
0.2
0.4
0.6
1
2
Figure 2. DC Current Gain
Figure 3. Turn−On Time
4
6
5
TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2
3
2
TJ = 25C
1
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.4
0.2
0.06 0.1
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)
V, VOLTAGE (VOLTS)
0.6
td @ VBE(off) 5 V
IC, COLLECTOR CURRENT (AMP)
1
0.8
0.1
0.03
0.02
1.4
1.2
tr
0.3
0.2
0.07
0.05
10
5
0.01
TJ = 25C
VCC = 30 V
IC/IB = 10
1
TJ = 150C
t, TIME (s)
hFE , DC CURRENT GAIN
300
200
ts
0.7
0.5
0.3
0.2
tf
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3
0.5
1
2
3
5
0.07
0.05
0.06 0.1
10
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages, MJD3055
Figure 5. Turn−Off Time
http://onsemi.com
4
2
4
6
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
2
TJ = 25C
1.6
V, VOLTAGE (VOLTS)
VCC
+30 V
25 ms
RC
+11 V
0
1.2
SCOPE
RB
-9 V
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 3 V
D1
51
tr, tf 10 ns
DUTY CYCLE = 1%
-4 V
0.4
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
0.5
1
2 3
IC, COLLECTOR CURRENT (AMP)
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
10
5
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 6. “On” Voltages, MJD2955
1
0.7
0.5
Figure 7. Switching Time Test Circuit
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
IC, COLLECTOR CURRENT (AMP)
10
5
3
2
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
1
1ms
0.5
0.3
5ms
0.1
dc
WIRE BOND LIMIT
THERMAL LIMIT TC = 25C (D = 0.1)
SECOND BREAKDOWN LIMIT
0.05
0.03
0.02
0.01
0.6
500ms
TJ = 150C
1
2
20
4
6
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
Figure 9. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
5
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
Z
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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7
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For additional information, please contact your local
Sales Representative
MJD2955/D