FMMT459 500V Silicon NPN high voltage switching transistor Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. Features ■ 6V reverse blocking capability ■ Low saturation voltage - 90mV @ 50mA ■ Hfe ⬎ 50 @ 30 mA ■ IC=150mA continuous ■ SOT23 package with Ptot 625mW ■ Specification can be supplied in other package outlines Applications ■ Electronic test equipment ■ Offline switching circuits ■ Piezo actuators ■ RCD circuits Ordering information Device Pin out - top view Reel size (inches) Tape width (mm) Quantity per reel FMMT459TA 7 8 3,000 FMMT459TC 13 8 10,000 Device marking 459 Issue 5 - August 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com FMMT459 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEV 500 V Collector-emitter voltage VCEO 450 V Emitter-base voltage VEBO 6 V Emitter-collector voltage VECV 6 V ICM 0.5 A Continuous collector current* IC 0.15 A Base current IB 0.2 A Power dissipation @ TA=25°C* Linear derating factor PD 625 5 mW mW/°C Power dissipation @ TA=25°C† Linear derating factor PD 806 6.4 mW mW/°C Tj:Tstg -55 to +150 °C Symbol Value Unit Junction to ambient* R⍜JA 200 °C/W Junction to ambient† R⍜JA 155 °C/W Peak pulse current Operating and storage temperature range Thermal resistance Parameter NOTES: * For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions † as above measured at t<5secs. Issue 5 - August 2005 © Zetex Semiconductors plc 2005 2 www.zetex.com FMMT459 Thermal characteristics Max Power Dissipation (W) IC Collector Current (A) 1 100m DC 1s 100ms 10m 10ms 1ms 100µs Single Pulse T amb=25°C 1m 100m 1 10 100 V CE Collector-Emitter Voltage (V) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Safe Operating Area Thermal Resistance (°C/W) 0.7 200 150 D=0.5 100 Single Pulse D=0.2 50 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 Pulse Width (s) 10 100 1k Transient Thermal Impedance Issue 5 - August 2005 © Zetex Semiconductors plc 2005 3 www.zetex.com FMMT459 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 500 Collector-emitter breakdown voltage BVCEV Collector-emitter breakdown voltage Max. Unit Conditions 700 V IC = 100A 500 700 V IC = 10A, 0.3V > VBE > -1V BVCEO 450 500 V IC = 10mA* Emitter-base breakdown voltage BVEBO 6 8.1 V IE = 100A Emitter-base breakdown voltage (reverse blocking) BVECV 6 8.1 V IC = 1A, 0.3V > VBC > -6V Collector-emitter cut-off current ICES 100 nA VCE=450V Collector-base cut-off current ICBO 100 nA VCB=450V Emitter-base cut-off current IEBO 100 nA VEB=5V Static forward current transfer ratio HFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter turn-on voltage VBE(on) Transition frequency fT Output capacitance Cobo Turn-on time t(ON) Turn-off time t(OFF) 50 120 IC = 30mA, VCE = 10V 70 IC = 50mA*, VCE = 10V 60 75 90 mV mV 0.76 0.9 V IC = 50mA, IB = 5mA* 0.71 0.9 V IC = 50mA, VCE = 10V* MHz IC = 10mA, VCE = 20V f = 20MHZ PF VCB = 20V, f = 1MHZ 113 ns IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA 3450 ns IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA 70 50 5 IC = 20mA, IB = 2mA* IC = 50mA, IB = 6mA* NOTES: * Measured under pulsed conditions. Pulse width = 300s; duty cycle <2% Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between Terminals. Issue 5 - August 2005 © Zetex Semiconductors plc 2005 4 www.zetex.com FMMT459 Electrical characteristics 0.40 1 Tamb=25°C 0.35 0.30 VCE(SAT) (V) VCE(SAT) (V) IC/IB=50 100m IC/IB=10 IC/IB=20 10m 1m 0.20 0.10 10m 100m 1m IC Collector Current (A) 100°C 25°C 90 -55°C 60 0.2 30 10m 100m 100m IC/IB=20 180 120 0.6 10m IC Collector Current (A) 1.0 210 150 0.0 1m -55°C VCE(SAT) v IC Typical Gain (hFE) VBE(SAT) (V) Normalised Gain VCE=10V 0.4 25°C 0.15 0.05 1.0 0.8 100°C 0.25 VCE(SAT) v IC 1.2 IC/IB=20 0.8 -55°C 0.6 100°C 0.4 1m 0 IC Collector Current (A) 25°C 10m 100m IC Collector Current (A) VBE(SAT) v IC hFE v IC 1.0 VCE=10V VBE(ON) (V) 0.8 -55°C 0.6 0.4 1m 25°C 100°C 10m 100m IC Collector Current (A) VBE(ON) v IC Issue 5 - August 2005 © Zetex Semiconductors plc 2005 5 www.zetex.com FMMT459 Packaging details - SOT23 L H N G D 3 leads M A B C K F Package dimensions Dimensions in inches are control dimensions, dimensions in millimeters are approximate. Dim. Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 Nom. - - 1.90 Nom. 0.075 Nom. - 0.0375 Nom. - - Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 5 - August 2005 © Zetex Semiconductors plc 2005 6 www.zetex.com