CRxxxx series devices is dissipated power (V x I). Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (TVS) and when compared to a GDT offers lower voltage clamping levels and infinite surge life. Packaged in a transfer molded DO-214AA surface mount outline designed for high speed pick & place machines used in today’s surface mount assembly lines. Electrical Charecteristics The electrical characteristics of a CRXXXX device is similar to that of a self gated Triac, but the CR is a two terminal device with no gate. The gate function is achieved by an internal current controlled mechanism. Like the T.T.S. diodes, the CRXXXX has a standoff voltage (Vrm) which should be equal to or greater than the operating voltage of the system to be protected. At this voltage (Vrm) the current consumption of the CRXXXX is negligible and will not effect the protected system. Resetting of the device to the non conducting state is controlled by the current flowing through the device. When the current falls below a certain value, known as the Holding Current (Ih), the device resets automatically. As with the avalanche T.V.S. device, if the CRXXXX is subjected to a surge current which is beyond its maximum rating, then the device will fail in short circuit mode, this ensures that the equipment is ultimately protected. Selecting A CRXXXX 1. When selecting a CRXXXX device, it is important that the Vrm of the device is equal to or greater than the operating voltage of the system. 2. The minimum Holding Current (Ih) must be greater than the current the system is capable of delivering otherwise the device will remain conducting following a transient condition. IT When a transient occurs, the voltage across the CRXXXX will increase until the breakdown voltage (Vbr) is reached. At this point the device will operate in a similar way to a T.V.S. device and is in an avalanche mode. The voltage of the transient will now be limited and will only increase by a few volts as the device diverts more current. As this transient current rises, a level of current through the device is reached (Ibo) which causes the device to switch to a fully conductive state such that the voltage across the device is now only a few volts (Vt). The voltage at which the device switches from the avalanche mode to the fully conductive state (Vt) is known as the Breakover Voltage (Vbo). When the device is in the Vt state, high currents can be deverted without damage to the CRXXXX due to the low voltage across the device, since the limiting factor in such IH VT IBO IRM VRM VBR VBO MIN V-I Graph Illustrating Symbols and Terms for the CR Surge Protection Device. The CRXXXX Range Can Be Used to Protect Against Surges As Defined In The Following International Standards. 52 SA SB SC FCC Rules Part 68/D Metallic Longitudinal 10/560µs 10/160µs 50A 100A 100A 150A 100A 200A Bellcore Specification TR-NWT-001089 10/1000µs 2/10µs 100v/µs 37A 1KV 75A 1KV 100A 500A 1KV ITU K-17 (Formerly CCITT) Voltage Wave Form Current Wave Form 100/700µs 5/310µs - 1.5KV 38A 1.5KV 38A VDE 0433 Voltage Wave Form Current Wave Form 10/700µs 5/310µs - 2KV 50A 4.0KV 100A C-NET 131-24 Voltage Wave From Current Wave Form 0.5/700µs 0.8/310µs 1.0KV 25A 1.0KV 25A 4.0KV 100A IEC 1000-4-5 (Discharge through 2Ω impendance) I Voltage Wave Form 8/20µs 1-2/50µs - 100A 300V 250A 500V ITU K-20 (Formerly CCITT) Voltage Wave Form Current Wave Form 10/700µs 5/310µs 1000V 25A 10000V 25A 4000V 100A w w w. l i t t e l f u s e . c o m CRxxxx series Specifications Electrical Charecteristics (Tj=25°C) SYMBOL VRM VBR VBO VT PARAMETER Stand-off Coltage Breakdown Voltage Breakover Voltage On-State Voltage SYMBOL IRM IBO IH PARAMETER Stand-off Current Breakover Current Holding Current THERMAL DATA T stg Storage and Operating Junction Temperature range Tj TL Maximum Temperature For Soldering (For period of 10 seconds max) Stock Number MAXIMUM RATINGS SUFFIX SA Ipp 10x160µs Amps Ipp 10x560µs Amps ITSM 60Hz Amps DI/dt Amps/µs 100 50 20 500 MAXIMUM RATINGS SUFFIX SB Ipp 10x160µs Amps Ipp 10x560µs Amps ITSM 60Hz Amps DI/dt Amps/µs 150 100 30 500 MAXIMUM RATINGS SUFFIX SC Ipp 2x10µs Amps Ipp 10x160µs Amps Ipp 10x560µs Amps ITSM 60Hz Amps dI/dt Amps/µs 500 200 100 60 500 VALUE -40 to +150 150 230 UNIT °C °C °C Device Code Reverse Stand-off Voltage Maximum Reverse Leakage µA Maximum Breakover Voltage @Ibo Maximum Breakover Current mA Minimum Holding Current mA Maximum On-State Voltage @1A Typical Capacitance @1MHz 2v bias pF CR CR CR CR CR CR CR CR 0300 0640 0720 0800 1100 1300 1500 1800 SA SA SA SA SA SA SA SA 030A 064A 072A 080A 110A 130A 150A 180A 25 58 65 75 90 120 140 160 5 5 5 5 5 5 5 5 40 77 88 98 130 160 180 220 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 5 5 5 5 5 5 5 5 100 60 60 60 60 40 40 40 CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR 2300 2600 3100 3500 0300 0640 0720 0800 1100 1300 1500 1800 2300 2600 3100 3500 SA SA SA SA SB SB SB SB SB SB SB SB SB SB SB SB 230A 260A 310A 350A 030B 064B 072B 080B 110B 130B 150B 180B 230B 260B 310B 350B 190 220 275 320 25 58 65 75 90 120 140 160 190 220 275 320 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 260 300 350 400 40 77 88 98 130 160 180 220 260 300 350 400 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 30 30 30 30 100 60 60 60 60 40 40 40 30 30 30 30 CR CR CR CR CR CR CR CR CR CR CR CR 0300 0640 0720 0800 1100 1300 1500 1800 2300 2600 3100 3500 SC SC SC SC SC SC SC SC SC SC SC SC 030C 064C 072C 080C 110C 130C 150C 180C 230C 260C 310C 350C 25 58 65 75 90 120 140 160 190 220 275 320 5 5 5 5 5 5 5 5 5 5 5 5 40 77 88 98 130 160 180 220 260 300 350 400 800 800 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 150 150 5 5 5 5 5 5 5 5 5 5 5 5 200 120 120 120 120 80 80 80 60 60 60 60 w w w. l i t t e l f u s e . c o m 53 CRxxxx series ° CRXXXXSB CRXXXXSC CRXXXXSA ° IPP - Percentage peak current - %IPP PULSE WAVE FORM (10/10000µS) tr 100 t2 90 tr = 1.25 x (t2 - t1) =10µs td = 1000µs 50 10 t1 1 ° 2 3 4 t - Time - m S e c Peak Current Surge (Non-Repetitive) On-State Current (RMS) - Amps PEAK SURGE ON-STATE CURRENT VS. SURGE CURRENT DURATION 100 80 60 50 40 30 CRXXXXSB CRXXXXSC 20 10 8 6 5 4 3 CRXXXXSA 2 1 1 2 3 4 5 10 20 30 40 50 100 200 300 1000 Surge Current Duration - full cycles @ 60HZ SINUSOIDAL Peak Value - Ipp 10x560µs PULSE WAVE FORM TEST WAVEFORM PARAMETER tr = 10 sec td = 160 sec Half Value = Ipp t = d 2 10x160 Waveform 0 80 160 240 320 400 Ipp - Peak Pulse Current - %Ipp Ipp - Peak Pulse Current - %Ipp 10x160µs PULSE WAVE FORM 480 Half Value = 560 840 1,120 1,400 1,680 t - Time - Sec w w w. l i t t e l f u s e . c o m Ipp t = d 2 10x560 Waveform 0 280 t - Time - Sec 54 Peak Value - Ipp TEST WAVEFORM PARAMETER tr = 10 sec td = 560 sec