Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient Storage temperature 3 + 0.1 0.15 − 0.05 0.9 ± 0.1 Symbol temperature* 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 − 0 + 0.1 ■ Features Note) * : Maximum ambient temperature during operation 1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) Marking Symbol • MA3Z080D : M1X • MA3Z080E : M1Y Internal Connection 1 1 3 3 2 2 D E ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 33 V 0.01 100 nA Forward voltage (DC) VF IF = 100 mA 0.92 1.0 V Diode capacitance CD VR = 6 V, f = 1 MHz 0.9 1.2 pF IF = 2 mA, f = 100 MHz 0.65 0.85 Ω Forward dynamic resistance* rf Note) 1．Each characteristic is a standard for individual diodes 2．Rated input/output frequency: 100 MHz 3．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA3Z080D, MA3Z080E Band Switching Diodes IF V F IR T a CD VR 1 000 10 Ta = 25°C 100 f = 1 MHz Ta = 25°C VR = 33 V 10 1 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 5 100 3 2 1 0.5 0.3 10 1 0.1 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) Forward voltage VF (V) rf IF 0.8 0.6 0.4 0.2 0 1 3 10 Forward current IF 2 30 (mA) 100 IF = 2 mA Ta = 25°C 0.8 0.6 0.4 0.2 0 10 30 100 300 Frequency f (MHz) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) rf f 1.0 f = 100 MHz Ta = 25°C Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 1.0 0.01 1 000