AP0903GMA
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ SO-8 similar area footprint and pin assignment
BVDSS
30V
▼ Low Gate Charge
RDS(ON)
9mΩ
D
▼ Fast Switching Speed
ID
60A
▼ RoHS Compliant
G
S
D
Description
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
S
SS
G
APAK-5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
60
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
38
A
195
A
45
W
0.36
W/℃
29
mJ
24
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
4
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Units
Max.
2.8
℃/W
Max.
85
℃/W
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200401053-1/4
AP0903GMA
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=33A
-
35
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C)
VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=33A
-
17
26
nC
VGS(th)
Gate Threshold Voltage
gfs
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10.3
-
nC
VDS=15V
-
8.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=33A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
21.4
-
ns
tf
Fall Time
RD=0.45Ω
-
8.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1485 2400
pF
Coss
Output Capacitance
VDS=25V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=60A, VGS=0V
-
-
1.3
V
IS=30A, VGS=0V,
-
29
-
ns
dI/dt=100A/µs
-
12
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
2/4
AP0903GMA
120
120
10V
7.0V
ID , Drain Current (A)
T C =25 C
10V
7.0V
o
T C =150 C
ID , Drain Current (A)
o
5.0V
80
4.5V
40
90
5.0V
4.5V
60
30
V G = 3.0 V
V G = 3.0 V
0
0
0
2
4
0
6
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
Fig 2. Typical Output Characteristics
24
1.7
I D =33A
V G =10V
Normalized RDS(ON)
I D =20A
T C =25 ℃
20
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
16
1.3
0.9
12
8
0.5
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.7
T j =150 o C
10
Normalized VGS(th) (V)
IS(A)
15
T j =25 o C
5
0
1.2
0.7
0.2
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP0903GMA
f=1.0MHz
12
10000
V DS =16V
V DS =20V
V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =33A
6
C iss
1000
3
C oss
C rss
0
100
0
5
10
15
20
25
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
1ms
10
T C =25 o C
Single Pulse
10ms
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
90
VG
ID , Drain Current (A)
V DS =5V
o
QG
o
T j =25 C
60
T j =150 C
4.5V
QGS
QGD
30
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4