DCR1275SD DCR1275SD Phase Control Thyristor Advance Information Replaces March 1998 version, DS4551-3.3 DS4551-4.0 January 2000 KEY PARAMETERS VDRM 2800V IT(AV) 1514A ITSM 28000A dVdt* 300V/µs dI/dt 150A/µs APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control FEATURES *Higher dV/dt selections available ■ Double Side Cooling ■ High Surge Capability ■ High Mean Current ■ Fatigue Free VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V Conditions 2800 2700 2600 2500 2400 Tvj = 0˚ to 125˚C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively DCR1275SD28 DCR1275SD26 DCR1275SD25 DCR1275SD24 DCR1275SD23 Lower voltage grades available. Outline type code: D. See Package Details for further information. CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 1514 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 2379 A Continuous (direct) on-state current - 2148 A 1047 A IT Single Side Cooled (Anode side) Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 1645 A Continuous (direct) on-state current - 1386 A IT 1/9 DCR1275SD CURRENT RATINGS Tcase = 80˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 1185 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 1860 A Continuous (direct) on-state current - 1640 A 805 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 1265 A Continuous (direct) on-state current - 1035 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 22.5 kA VR = 50% VRRM - 1/4 sine 2.53 x 106 A2s 10ms half sine; Tcase = 125oC 28.0 kA VR = 0 3.92 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.020 o Anode dc - 0.036 o Cathode dc - 0.044 o Double side - 0.004 o Single side - 0.008 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range -55 125 o Clamping force 20.0 24.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - 2/9 Thermal resistance - case to heatsink Clamping force 22.0kN with mounting compound C/W C/W C/W C Virtual junction temperature C C kN DCR1275SD DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 150 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 300 V/µs - 100 A/µs Rate of rise of on-state current From 67% VDRM to 1000A Gate source 10V, 5Ω tr = 1µs, Tj = 125oC Repetitive 50Hz dI/dt Non-repetitive - 150 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 0.92 V rT On-state slope resistance At Tvj = 125oC - 0.276 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω tr = 0.5µs, Tj = 25oC - 1.5 µs tq Turn-off time IT = 1000A, tp = 1ms, Tj = 125˚C, VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear 500 650 µs IL Latching current Tj = 25oC, VD = 5V 300 1000 mA IH Holding current Tj = 25oC, Rg-k = ∞ 200 500 mA Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 4.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 400 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table, fig.4 100 W PG(AV) Mean gate power 5 W 3/9 DCR1275SD CURVES 5000 Measured under pulse conditions Instantaneous on-state current, IT - (A) 4000 3000 Tj = 125˚C 2000 1000 0 0.5 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) Fig.1 Maximum (limit) on-state characteristics 4/9 2.5 DCR1275SD 4000 d.c. Half wave 3 phase 6 phase Mean power dissipation - (W) 3000 2000 1000 0 0 500 1000 1500 Mean on-state current IT(AV) - (A) G SS O C Fig.2 Dissipation curves 2000 2500 S 5/9 DCR1275SD 100 Gate trigger voltage, VGT - (V) VFGM 10 Table gives pulse power PGM in Watts Pulse width µs 100 200 500 1ms 10ms Pulse frequency Hz 400 100 50 150 150 150 125 150 150 100 150 150 25 150 100 20 100W 50W 20W 10W 5W 2W Tj = 25˚C 9% it 9 lim per Tj = 125˚C Up Tj = -40˚C 1 r limit Lowe 0.1 0.001 0.01 1% 0.1 Gate trigger current, IGT - (A) 1 10 IFGM Fig.3 Gate characteristics 1.0 Thermal impedance - (˚C/W) Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Anode side Double side 0.036 0.020 0.038 0.022 0.040 0.024 0.043 0.027 0.1 Anode side cooled Double side cooled 0.01 0.001 0.001 0.01 0.1 Time - (s) 1 Fig.4 Maximum (limit) transient thermal impedance - junction to case 6/9 10 DCR1275SD I2t = Î2 x t 2 40 30 4.0 20 3.0 I2t 10 0 1 2.0 10 1 2 ms 3 45 I2t value - (A2s x 106) Peak half sine wave on-state current - (kA) 50 1.0 50 Cycles at 50Hz Duration Fig.5 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125˚C) 7/9 DCR1275SD PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 deep (One each side) Cathode tab Cathode Ø76 max Ø48 nom 27.0 25.4 Ø2.8 Gate Ø48 nom Anode Nominal weight: 500g Clamping force: 22kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: D ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Gate triggering and the use of gate characteristics AN4840 Recommendations for clamping power semiconductors AN4839 The effect of temperature on thyristor performance AN4870 Thyristor and diode measurement with a multi-meter AN4853 Turn-on performance of thyristors in parallel AN4999 Use of V , r on-state characteristic AN5001 TO 8/9 T DCR1275SD POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4551-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9