KSC2316 KSC2316 Audio Power Amplifier Applications • Driver Stage Amplifier • Complement to KSA916 TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Ratings 120 Units V 120 V 5 V Collector Current 800 mA PC Collector Power Dissipation 900 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ +150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=1mA, IE=0 Min. 120 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 120 BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 ICBO Collector Cut-off Current VCB=120V, IE=0 hFE1 hFE2 DC Current Gain VCE=5V, IC=10mA VCE=5V, IC=100mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA fT Current Gain Bandwidth Product VCE=5V, IC=100mA Cob Collector Output Capacitance VCB=10V,IE=0, f=1MHz Typ. Max. Units V V V 0.1 60 80 µA 240 1 120 V MHz 30 pF hFE Classification Classification O Y hFE2 80-160 120-240 ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC2316 Typical Characteristics 1000 1000 IB = 10mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 5V IB = 15mA 800 IB = 7mA 600 IB = 5mA IB = 4mA IB = 3mA 400 IB = 2mA 200 100 IB = 1mA IB = 0 0 0 2 4 6 10 8 10 1 12 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10000 VCE = 5V IC = 10 IB IC[mA], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 100 1 0.1 0.01 0.1 1 10 100 1000 1000 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10000 s* 1m s* 0m 10 * s m 10 IC[mA], COLLECTOR CURRENT *Single Pulse 1000 DC TC =2 OP o 5C ER AT IN G 100 10 1 10 100 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC2316 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1