EMF18XV6T5 Dual Transistor Power Management NPN/PNP Dual (Complementary) http://onsemi.com Features • Low VCE(SAT), t0.5 V • These are Pb−Free Devices (3) MAXIMUM RATINGS (2) R1 Q1 Q1 Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Value Unit Collector −Emitter Voltage VCEO −60 V Collector −Base Voltage VCBO −50 V Emitter −Base Voltage VEBO −6.0 V IC −100 mAdc Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Collector Current (1) Q2 R2 (4) (5) (6) Q2 Rating Collector Current − Continuous 6 1 SOT−563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation mW/°C RqJA 350 (Note 1) °C/W Symbol Max Unit PD 500 (Note1) 4.0 (Note 1) mW TA = 25°C MARKING DIAGRAM 1 UV M G G Thermal Resistance, Junction-to-Ambient RqJA 250 (Note 1) °C/W UV = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C ORDERING INFORMATION Derate above 25°C mW/°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. Package Shipping† EMF18XV6T5 SOT−563 (Pb−Free) 8000/Tape & Reel EMF18XV6T5G SOT−563 (Pb−Free) 8000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 2 1 Publication Order Number: EMF18XV6/D EMF18XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) (Note 2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 32.9 47 61.1 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc ICBO − − −0.5 nA Q1: NPN DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Q2: PNP Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 4) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc) IEBO − − −0.5 mA VCE(sat) − − −0.5 Vdc hFE 120 − 560 − fT − 140 − MHz COB − 3.5 − pF Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) 3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 EMF18XV6T5 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN IC/IB = 10 1 25°C TA=-25°C 75°C 0.1 VCE = 10 V TA=75°C 25°C -25°C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 1. VCE(sat) versus IC Figure 2. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 0.4 TA=-25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 Figure 3. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 4. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 5. Input Voltage versus Output Current http://onsemi.com 3 50 10 EMF18XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP 1000 VCE = 10 V 120 90 300 mA 250 200 60 150 IB = 50 mA 0 3 6 12 9 10 0.1 15 10 100 IC, COLLECTOR CURRENT (mA) Figure 6. IC − VCE Figure 7. DC Current Gain 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR‐EMITTER VOLTAGE (V) 1 VCE, COLLECTOR VOLTAGE (V) 2 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) Cob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = - 25°C 100 100 30 0 TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 25°C 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 30 VCB (V) Figure 10. Capacitance Figure 11. Capacitance http://onsemi.com 4 40 EMF18XV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 1 e A 5 4 2 3 L E −Y− b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. HE DIM A b C D E e L HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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