NXP BAT754S Schottky barrier (double) diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D088
BAT754 series
Schottky barrier (double) diodes
Product data sheet
Supersedes data of 1999 Aug 05
2003 Mar 25
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES
BAT754 series
PINNING
• Very low forward voltage
BAT754
PIN
• Guard ring protected
• Small plastic SMD package
• Low diode capacitance.
A
C
S
1
a
k1
a1
a1
2
n.c.
k2
a2
k2
3
k
3
1
2
MLC360
a1, a2 k1, k2 k1, a2
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
handbook, 2 columns
Fig.3
3
BAT754A diode
configuration (symbol).
• Protection circuits
• Blocking diodes
• Low power consumption
applications, e.g. hand-held
applications.
3
1
2
1
Top view
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltage selection of the BAT54 series.
Single diodes and double diodes with
different pinning are available.
Fig.1
TYPE NUMBER
MGC421
Simplified outline
(SOT23) and pin
configuration.
MARKING
BAT754
2K*
BAT754A
2L*
BAT754C
2M*
BAT754S
2N*
Note
1
Fig.4
BAT754C diode
configuration (symbol).
3
2
n.c.
1
MLC357
Fig.2
BAT754 single diode
configuration (symbol).
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Mar 25
MLC359
3
MARKING
CODE(1)
2
2
2
MLC358
Fig.5
BAT754S diode
configuration (symbol).
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT754 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
30
V
−
200
mA
−
300
mA
−
600
mA
storage temperature
−65
+150
°C
junction temperature
−
125
°C
operating ambient temperature
−65
+125
°C
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
Tstg
Tj
Tamb
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF = 0.1 mA
−
200
mV
IF = 1 mA
−
260
mV
IF = 10 mA
−
340
mV
IF = 30 mA
−
420
mV
IF = 100 mA
600
−
mV
IR
reverse current
VR = 25 V; note 1; see Fig.7
−
2
μA
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.8
−
10
pF
Note
1. Pulse test: tp = 300 μs; δ ≤ 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Refer to SOT23 standard mounting conditions.
2003 Mar 25
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT754 series
GRAPHICAL DATA
MSA892
IF
MSA893
10 3
3
10halfpage
handbook,
I
R
(μA)
(1) (2) (3)
(mA)
(1)
10 2
10 2
(2)
10
10
(1)
1
10 1
(2) (3)
1
(3)
10 1
0
0.4
0.8
VF (V)
0
1.2
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6
Fig.7
Forward current as a function of forward
voltage; typical values.
MSA891
15
handbook, halfpage
Cd
(pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4
20
VR (V)
30
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT754 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
5
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT754 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Mar 25
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
6
NXP Semiconductors
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Printed in The Netherlands
613514/02/pp7
Date of release: 2003 Mar 25
Document order number: 9397 750 10968
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