GBU6A thru GBU6M SERIES SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC REVERSE VOLTAGE -50 to 1000 Volts FORWARD CURRENT -6.0 Amperes FEATURES Surge overload rating-175 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has Underwriters Laboratory Flammability classification 94V-O Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. GBU6A GBU6B GBU6D GBU6G GBU6J GBU6K GBU6M UNITS 100 200 400 600 800 1000 V Maximum Recurrent Peak Reverse Voltage VRRM 50 Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward (with heatsink Note2) Rectified Current @ TC=100 C (without heatsink) I(AV) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load(JEDEC Method) IFSM 175 A Maximum DC Forward Voltage at 3.0A DC VF 1.0 V Maximum DC Reverse Current at rated DC Blocking Voltage IR 0 @ TA=25 C 0 @ TA=1250C I2 t Rating for fusing (t<8.3ms) I2 t CJ Typical Junction Capacitance per element(Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range R JC 6.0 A 2.8 5.0 A 500 2 127 AS PF 50 2.2 0 C/W TJ -55 to +150 0 TSTG -55 to +150 0 NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Device mounted on 75mm x 75mm X 1.6mm Cu Plate Heatsink. C C GBU6A thru GBU6M SERIES SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC RATING AND CHARACTERISTICS CURVES GBU6A THRU GBU6M FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG. 1 - FORWARD CURRENT DERATING CURVE 6.0 WITH HEATSINK 5.0 4.0 3.0 WITHOUT HEATSINK 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.0 0 20 40 60 80 100 120 180 160 140 120 100 80 60 40 Single Half Sine-Wave (JEDEC METHOD) 20 0 140 1 2 5 CASE TEMPERATURE, 0C FIG. 3 - TYPICAL JUNCTION CAPACITANCE 20 50 100 FIG. 4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, (A) 100 10 10 1.0 0 TJ=25C PULSE WIDTH:300 0 TJ=25C, f= 1MHz 1.0 1.0 4.0 10.0 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 1000 0 TJ=125C 100 0 TJ=100C 10 TJ=500C 1.0 TJ=250C 0.1 0 S 0.1 REVERSE VOLTAGE, VOLTS A) 0.1 INSTANTANEOUS REVERSE CURRENT, ( CAPACITANCE, (pF) 10 NUMBER OF CYCLES AT 60Hz 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 1.8